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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) |
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![]() | FDPF7N60NZT | 0,6400 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | UNIFET-II ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 6,5a (TC) | 10V | 1,25OHM @ 3,25A, 10V | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 730 PF @ 25 V. | - - - | 33W (TC) | ||||||||||||||||||||||
![]() | NDB6060L | 1.0000 | ![]() | 1081 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 48a (TC) | 5v, 10V | 20mohm @ 24a, 10V | 2v @ 250 ähm | 60 NC @ 5 V | ± 16 v | 2000 PF @ 25 V. | - - - | 100 W (TC) | ||||||||||||||||||||||
![]() | FQN1N60CBU | - - - | ![]() | 2920 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MOSFET (Metalloxid) | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 300 mA (TC) | 10V | 11,5 Ohm @ 150 mA, 10 V | 4v @ 250 ähm | 6.2 NC @ 10 V | ± 30 v | 170 PF @ 25 V. | - - - | 1W (TA), 3W (TC) | |||||||||||||||||||||
![]() | Fqpf5n50c | 1.0000 | ![]() | 5408 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 5a (TC) | 10V | 1,4OHM @ 2,5a, 10 V. | 4v @ 250 ähm | 24 nc @ 10 v | ± 30 v | 625 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||
![]() | FDMD8900 | 0,9900 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 12-Powerwdfn | FDMD89 | MOSFET (Metalloxid) | 2.1W | 12-Power3.3x5 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 30V | 19a, 17a | 4mohm @ 19a, 10V | 2,5 V @ 250 ähm | 35nc @ 10v | 2605PF @ 15V | - - - | |||||||||||||||||||||||
![]() | HUFA75343G3 | 1.0200 | ![]() | 821 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 150 | N-Kanal | 55 v | 75a (TC) | 10V | 9mohm @ 75a, 10V | 4v @ 250 ähm | 205 NC @ 20 V | ± 20 V | 3000 PF @ 25 V. | - - - | 270W (TC) | |||||||||||||||||||||
![]() | FDPF13N50NZ | 1.0000 | ![]() | 4735 | 0.00000000 | Fairchild Semiconductor | UNIFET-II ™ | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 Full Pack | FDPF1 | MOSFET (Metalloxid) | To-220f | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 12a | 540Mohm @ 6a, 10V | 5 V @ 250 ähm | 39 NC @ 10 V. | 1930 PF @ 25 V. | - - - | 42W (TC) | ||||||||||||||||||||
![]() | FDS9933BZ | 0,5100 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS99 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 p-kanal (dual) | 20V | 4.9a | 46mohm @ 4,9a, 4,5 V. | 1,5 V @ 250 ähm | 15nc @ 4,5 V | 985PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||
![]() | FDP6676s | 0,9800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 76a (ta) | 4,5 V, 10 V. | 6,5 MOHM @ 38A, 10V | 3V @ 1ma | 56 NC @ 5 V. | ± 16 v | 4853 PF @ 15 V | - - - | 70W (TC) | |||||||||||||||||||
![]() | KSC2669YTA | 0,0200 | ![]() | 9489 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Kurzkörper | 200 MW | To-92s | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.752 | 30 v | 30 ma | 100NA (ICBO) | Npn | 400mv @ 1ma, 10 mA | 120 @ 2MA, 12V | 250 MHz | |||||||||||||||||||||||||
![]() | BC546 | 0,0400 | ![]() | 114 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 65 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||
![]() | HUF76121P3 | 0,4000 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 47a (TC) | 4,5 V, 10 V. | 21mohm @ 47a, 10V | 3v @ 250 ähm | 30 NC @ 10 V | ± 20 V | 850 PF @ 25 V. | - - - | 75W (TC) | |||||||||||||||||||
![]() | 2SA1943Rtu | 2.7700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | 150 w | HPM F2 | Herunterladen | Ear99 | 8541.29.0075 | 109 | 250 V | 17 a | 5 µA (ICBO) | PNP | 3v @ 800 mA, 8a | 55 @ 1a, 5v | 30 MHz | ||||||||||||||||||||||||||
![]() | FDPF5N50UTYDtu | 0,6300 | ![]() | 49 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDPF5N | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||||||||||||||||
SI6426DQ | 0,1900 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 5.4a (TA) | 2,5 V, 4,5 V. | 35mohm @ 5,4a, 4,5 V. | 1,5 V @ 250 ähm | 10 NC @ 4,5 V. | ± 8 v | 710 PF @ 10 V. | - - - | 1.1W (TA) | ||||||||||||||||||||
![]() | 2SD1111-AA | 0,1200 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 600 MW | 3-NP | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 50 v | 700 Ma | 100NA (ICBO) | NPN - Darlington | 1,2 V @ 100 µA, 100 mA | 5000 @ 50 Ma, 2V | 200 MHz | |||||||||||||||||||||||
![]() | Fdpf18n20ft | - - - | ![]() | 1903 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 200 v | 18a (TC) | 10V | 140MOHM @ 9A, 10V | 5 V @ 250 ähm | 26 NC @ 10 V | ± 30 v | 1180 PF @ 25 V. | - - - | 41W (TC) | |||||||||||||||||||||||
![]() | MMBT2222A | - - - | ![]() | 8163 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT2222 | 350 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 40 v | 500 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | ||||||||||||||||||||||
![]() | SGF23N60UFTU | 1.4200 | ![]() | 154 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | SGF23N60 | Standard | 75 w | To-3Pf | Herunterladen | Ear99 | 8541.29.0095 | 1 | 300 V, 12a, 23 Ohm, 15 V | - - - | 600 V | 23 a | 92 a | 2,6 V @ 15V, 12a | 115 µJ (EIN), 135 µJ (AUS) | 17ns/60ns | |||||||||||||||||||||||
![]() | FDB8896 | 0,9100 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 330 | N-Kanal | 30 v | 19A (TA), 93a (TC) | 4,5 V, 10 V. | 5.7mohm @ 35a, 10V | 2,5 V @ 250 ähm | 67 NC @ 10 V | ± 20 V | 2525 PF @ 15 V | - - - | 80W (TC) | ||||||||||||||||||||||
![]() | FDB8870 | 1.0300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 23a (TA), 160a (TC) | 4,5 V, 10 V. | 3,9 MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 132 NC @ 10 V | ± 20 V | 5200 PF @ 15 V | - - - | 160W (TC) | ||||||||||||||||||||||
![]() | IRFI630BTU | 0,2300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 9a (TC) | 10V | 400 MOHM @ 4,5A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 720 PF @ 25 V. | - - - | 3.13W (TA), 72W (TC) | |||||||||||||||||||
![]() | Fjy3011r | 0,0200 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | FJY301 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 250 MHz | 22 Kohms | ||||||||||||||||||||||||
![]() | FCPF11N60NT | 2.2300 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | Supermos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 135 | N-Kanal | 600 V | 10.8a (TC) | 10V | 299mohm @ 5.4a, 10V | 4v @ 250 ähm | 35.6 NC @ 10 V. | ± 30 v | 1505 PF @ 100 V | - - - | 32.1W (TC) | ||||||||||||||||||||||
![]() | HUFA75321S3ST | 0,7700 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 35a (TC) | 10V | 34mohm @ 35a, 10V | 4v @ 250 ähm | 44 NC @ 20 V | ± 20 V | 680 PF @ 25 V. | - - - | 93W (TC) | |||||||||||||||||||||
![]() | 2N6076 | 0,0200 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 25 v | 500 mA | 100na | PNP | 250 mV @ 1ma, 10 mA | 100 @ 10 Ma, 1V | - - - | |||||||||||||||||||||||||
![]() | Fdn357n | 0,1500 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | Ear99 | 8541.21.0095 | 1.976 | N-Kanal | 30 v | 1,9a (ta) | 4,5 V, 10 V. | 60MOHM @ 2,2a, 10V | 2v @ 250 ähm | 5,9 NC @ 5 V. | ± 20 V | 235 PF @ 10 V | - - - | 500 MW (TA) | ||||||||||||||||||||||
![]() | Rfd14n05l_nl | 0,5200 | ![]() | 8832 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 408 | N-Kanal | 50 v | 14a (TC) | 5v | 100mohm @ 14a, 5V | 2v @ 250 ähm | 40 nc @ 10 v | ± 10 V | 670 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||
![]() | FDM2509nz | 0,3700 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-udfn exponiert pad | FDM2509 | MOSFET (Metalloxid) | 800 MW | Mikrofet 2x2 Dünn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 20V | 8.7a | 18mohm @ 8,7a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1200PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||
![]() | SSW4N60BTM | - - - | ![]() | 2800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 4a (TC) | 10V | 2,5OHM @ 2a, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 920 PF @ 25 V. | - - - | 3.13W (TA), 100 W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus