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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | HUF75344A3 | 1.3700 | ![]() | 616 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 208 NC @ 20 V | ± 20 V | 4855 PF @ 25 V. | - - - | 288,5W (TC) | |||||||||||||||||||||||
![]() | KSA928AYBU | - - - | ![]() | 7501 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 500 | 30 v | 2 a | 100NA (ICBO) | PNP | 2v @ 30 mA, 1,5a | 160 @ 500 mA, 2V | 120 MHz | |||||||||||||||||||||||||||
![]() | PN2907ara | 0,0200 | ![]() | 1868 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | PN2907 | 625 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 4.000 | 60 v | 800 mA | 50na | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | ||||||||||||||||||||||||
![]() | FDU8896 | 0,7200 | ![]() | 116 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 30 v | 17a (ta), 94a (TC) | 4,5 V, 10 V. | 5.7mohm @ 35a, 10V | 2,5 V @ 250 ähm | 60 nc @ 10 v | ± 20 V | 2525 PF @ 15 V | - - - | 80W (TC) | |||||||||||||||||||||||
![]() | ISL9N312AD3 | 0,2900 | ![]() | 211 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 50a (TC) | 4,5 V, 10 V. | 12mohm @ 50a, 10V | 3v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1450 PF @ 15 V | - - - | 75W (TA) | |||||||||||||||||||||
![]() | KSA1281YTA | 0,1400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | 1 w | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 2,213 | 50 v | 2 a | 100NA (ICBO) | PNP | 500mv @ 50 Ma, 1a | 120 @ 500 mA, 2V | 100 MHz | ||||||||||||||||||||||||||||
![]() | HUFA75652G3 | 3.3800 | ![]() | 1203 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | - - - | ROHS3 -KONFORM | 2156-HUFA75652G3-FS | Ear99 | 8541.29.0095 | 150 | N-Kanal | 100 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 475 NC @ 20 V | ± 20 V | 7585 PF @ 25 V. | - - - | 515W (TC) | ||||||||||||||||||||||
![]() | Fqpf8n90c | 1.1700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Fqpf8 | MOSFET (Metalloxid) | To-220f | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 900 V | 6.3a (TC) | 10V | 1,9ohm @ 3.15a, 10 V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 2080 PF @ 25 V. | - - - | 60 W (TC) | |||||||||||||||||||||||
![]() | FDBL86563-F085 | - - - | ![]() | 8578 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 240a (TC) | 10V | 1,5 MOHM @ 80A, 10V | 4v @ 250 ähm | 169 NC @ 10 V | ± 20 V | 10300 PF @ 30 V | - - - | 357W (TJ) | ||||||||||||||||||||||||
![]() | KST3906MTF | 1.0000 | ![]() | 5074 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KST39 | 350 MW | SOT-23-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | ||||||||||||||||||||||||
![]() | FQD7N10TM | 0,5100 | ![]() | 176 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 5.8a (TC) | 10V | 350 MOHM @ 2,9a, 10V | 4v @ 250 ähm | 7,5 NC @ 10 V | ± 25 V | 250 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||||||||||||||||||||
![]() | Fqu3n60TU | 0,5100 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 600 V | 2.4a (TC) | 10V | 3,6OHM @ 1,2a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 450 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | |||||||||||||||||||||||
![]() | ISL9V2540S3ST | 1.4100 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Logik | 166,7 w | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 300 V, 1kohm, 5V | - - - | 430 v | 15.5 a | 1,8 V @ 4V, 6a | - - - | 15.1 NC | -/3,64 µs | ||||||||||||||||||||||||||
![]() | FQA9N90 | - - - | ![]() | 2716 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 900 V | 8.6a (TC) | 10V | 1,3OHM @ 4,3a, 10V | 5 V @ 250 ähm | 72 NC @ 10 V | ± 30 v | 2700 PF @ 25 V. | - - - | 240W (TC) | |||||||||||||||||||||
![]() | KSH340TF | 0,2700 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | To-252-3 (dpak) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 2.000 | 300 V | 500 mA | 100 µA | Npn | - - - | 30 @ 50 Ma, 10 V | - - - | |||||||||||||||||||||||||||
![]() | BC560CTA | 1.0000 | ![]() | 1751 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | BC560 | 500 MW | To-92-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||
![]() | FQP11P06 | 1.0000 | ![]() | 8214 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 60 v | 11.4a (TC) | 10V | 175mohm @ 5.7a, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 25 V | 550 PF @ 25 V. | - - - | 53W (TC) | ||||||||||||||||||||||||
![]() | HUF75637S3ST | 1.4800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 44a (TC) | 10V | 30mohm @ 44a, 10V | 4v @ 250 ähm | 108 NC @ 20 V | ± 20 V | 1700 PF @ 25 V. | - - - | 155W (TC) | |||||||||||||||||||||||
![]() | NDS9435a | - - - | ![]() | 7896 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 5.3a (ta) | 4,5 V, 10 V. | 50mohm @ 5.3a, 10V | 3v @ 250 ähm | 14 NC @ 10 V | ± 25 V | 528 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||
![]() | HUFA75344P3 | 0,9700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) | |||||||||||||||||||||||
![]() | BDX53BTU | - - - | ![]() | 1115 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 60 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 844 | 80 v | 8 a | 500 ähm | NPN - Darlington | 2v @ 12 ma, 3a | 750 @ 3a, 3v | - - - | |||||||||||||||||||||||||||
![]() | HGT1N30N60A4D | 18.2300 | ![]() | 844 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Chassis -berg | SOT-227-4, MiniBloc | 255 w | Standard | SOT-227B | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 60 | Einzel | - - - | 600 V | 96 a | 2,7 V @ 15V, 30a | 250 µA | NEIN | ||||||||||||||||||||||||||
![]() | MPS6513 | 1.0000 | ![]() | 6881 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 30 v | 200 ma | 50na (ICBO) | Npn | 500mv @ 5ma, 50 mA | 90 @ 2MA, 10V | - - - | |||||||||||||||||||||||||||
![]() | FDS6676 | 1.7700 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 14,5a (ta) | 4,5 V, 10 V. | 7mohm @ 14.5a, 10V | 3v @ 250 ähm | 63 NC @ 5 V. | ± 16 v | 5103 PF @ 15 V | - - - | 1W (TA) | |||||||||||||||||||||
![]() | HUF76139S3STK | 0,5000 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 7,5 MOHM @ 75A, 10V | 3v @ 250 ähm | 78 NC @ 10 V | ± 20 V | 2700 PF @ 25 V. | - - - | 165W (TC) | |||||||||||||||||||||
![]() | MMBT4354 | - - - | ![]() | 1905 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 375 | 60 v | 800 mA | 50na (ICBO) | PNP | 500 mv @ 50 mA, 500 mA | 50 @ 10ma, 5v | - - - | |||||||||||||||||||||||||
![]() | Fdd16an08a0_nl | - - - | ![]() | 7944 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 75 V | 9A (TA), 50A (TC) | 6 V, 10V | 16mohm @ 50a, 10V | 4v @ 250 ähm | 47 NC @ 10 V | ± 20 V | 1874 PF @ 25 V. | - - - | 135W (TC) | |||||||||||||||||||||
![]() | ISL9N306AS3ST | 0,3700 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 6mohm @ 75a, 10V | 3v @ 250 ähm | 90 nc @ 10 v | ± 20 V | 3400 PF @ 15 V | - - - | 125W (TA) | |||||||||||||||||||||
![]() | IRFS634B_FP001 | 0,5000 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 250 V | 8.1a (TC) | 10V | 450MOHM @ 4.05A, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1000 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||||
![]() | TN6717A | 0,1200 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | TN6717 | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 80 v | 1.2 a | 100NA (ICBO) | Npn | 350 MV @ 10 Ma, 250 mA | 50 @ 250 mA, 1V | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus