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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ Testedingung ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Reverse Recovery Time (TRR) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C Strom - Sammler Cutoff (max) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang
FQD1N60CTM Fairchild Semiconductor FQD1N60CTM 0,2700
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen Ear99 8542.39.0001 1,110 N-Kanal 600 V 1a (TC) 10V 11,5 OHM @ 500 mA, 10V 4v @ 250 ähm 6.2 NC @ 10 V ± 30 v 170 PF @ 25 V. - - - 2,5 W (TA), 28 W (TC)
FDPC1002S Fairchild Semiconductor FDPC1002s 0,3900
RFQ
 ECAD 10 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C. Oberflächenhalterung 8-Powerwdfn FDPC1 MOSFET (Metalloxid) 1,6W (TA), 2W (TA) Powerclip-33 Herunterladen Ear99 8542.39.0001 1 2 n-kanal (dual) 25 v 13a (ta), 20a (TC), 27a (TA), 60A (TC) 6mohm @ 13a, 10V, 1,8 Mohm @ 27a, 10V 2,2 V @ 250 µA, 2,2 V @ 1ma 19nc @ 10v, 64nc @ 10v 1240PF @ 13V, 4335PF @ 13V - - -
FDZ204P Fairchild Semiconductor FDZ204p 0,2900
RFQ
 ECAD 157 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 9-WFBGA MOSFET (Metalloxid) 9-bga (2x2,1) Herunterladen Rohs Nick Konform Ear99 8541.29.0095 3.000 P-Kanal 20 v 4,5a (TA) 2,5 V, 4,5 V. 45mohm @ 4,5a, 4,5 V. 1,5 V @ 250 ähm 13 NC @ 4,5 V. ± 12 V 884 PF @ 10 V. - - - 1,8W (TA)
FQP17N08L Fairchild Semiconductor FQP17N08L 0,4300
RFQ
 ECAD 2 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 80 v 16,5a (TC) 5v, 10V 100MOHM @ 8.25A, 10V 2v @ 250 ähm 11,5 NC @ 5 V. ± 20 V 520 PF @ 25 V. - - - 65W (TC)
FDR844P Fairchild Semiconductor FDR844p 0,7000
RFQ
 ECAD 4 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-TSOP (0,130 ", 3,30 mm Breit) MOSFET (Metalloxid) Supersot ™ -8 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 3.000 P-Kanal 20 v 10a (ta) 1,8 V, 4,5 V. 11mohm @ 10a, 4,5 V. 1,5 V @ 250 ähm 74 NC @ 4,5 V. ± 8 v 4951 PF @ 10 V. - - - 1,8W (TA)
BC212 Fairchild Semiconductor BC212 1.0000
RFQ
 ECAD 8349 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 2.000 50 v 300 ma 15NA (ICBO) PNP 600mv @ 5ma, 100 mA 60 @ 2MA, 5V - - -
FGS15N40LTF Fairchild Semiconductor FGS15N40LTF 0,5100
RFQ
 ECAD 161 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -40 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Standard 2 w 8-soic Herunterladen Rohs Nick Konform Ear99 8541.29.0095 3.000 - - - Graben 400 V 130 a 8v @ 4V, 130a - - - - - -
FQP3N80C Fairchild Semiconductor FQP3N80C 0,7500
RFQ
 ECAD 53 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8542.39.0001 401 N-Kanal 800 V 3a (TC) 10V 4,8ohm @ 1,5a, 10 V. 5 V @ 250 ähm 16,5 NC @ 10 V. ± 30 v 705 PF @ 25 V. - - - 107W (TC)
NDP603AL Fairchild Semiconductor NDP603Al 0,3200
RFQ
 ECAD 34 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet -65 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Rohs Nick Konform Ear99 8541.29.0095 45 N-Kanal 30 v 25a (TC) 4,5 V, 10 V. 22mohm @ 25a, 10V 3v @ 250 ähm 40 nc @ 10 v ± 20 V 1100 PF @ 15 V - - - 50W (TC)
HUFA75345P3 Fairchild Semiconductor HUFA75345P3 2.2600
RFQ
 ECAD 6 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 N-Kanal 55 v 75a (TC) 10V 7mohm @ 75a, 10V 4v @ 250 ähm 275 NC @ 20 V ± 20 V 4000 PF @ 25 V. - - - 325W (TC)
KSA940H2TU Fairchild Semiconductor KSA940H2TU - - -
RFQ
 ECAD 1692 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch To-220-3 1,5 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 150 v 1,5 a 10 µA (ICBO) PNP 1,5 V @ 50 Ma, 500 mA 40 @ 500 mA, 10 V. 4MHz
HUF76105SK8T Fairchild Semiconductor HUF76105SK8T 0,3300
RFQ
 ECAD 82 0.00000000 Fairchild Semiconductor Ultrafet® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen Rohs Nick Konform 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 2.500 N-Kanal 30 v 5.5a (TA) 4,5 V, 10 V. 50MOHM @ 5.5A, 10V 3v @ 250 ähm 11 NC @ 10 V ± 20 V 325 PF @ 25 V. - - - 2,5 W (TA)
NDP708AE Fairchild Semiconductor NDP708AE 2.2600
RFQ
 ECAD 3 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv Herunterladen Verkäfer undefiniert Verkäfer undefiniert 2156P708AE-600039 1
FQB8P10TM Fairchild Semiconductor FQB8P10TM - - -
RFQ
 ECAD 5986 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen Ear99 8542.39.0001 1 P-Kanal 100 v 8a (TC) 10V 530mohm @ 4a, 10V 4v @ 250 ähm 15 NC @ 10 V ± 30 v 470 PF @ 25 V. - - - 3,75W (TA), 65W (TC)
SFI9Z24TU Fairchild Semiconductor Sfi9z24tu 0,1900
RFQ
 ECAD 2 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 1 P-Kanal 60 v 9.7a (TC) 10V 280 MOHM @ 4,9a, 10V 4v @ 250 ähm 19 NC @ 10 V ± 30 v 600 PF @ 25 V. - - - 3,8 W (TA), 49W (TC)
MPSH17-D26Z Fairchild Semiconductor MPSH17-D26Z 0,0700
RFQ
 ECAD 10 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv - - - Nicht Anwendbar 3 (168 Stunden) Verkäfer undefiniert Ear99 8542.39.0001 2.000
FQD16N15TM Fairchild Semiconductor FQD16N15TM 0,5300
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 150 v 11,8a (TC) 10V 160MOHM @ 5.9a, 10V 4v @ 250 ähm 30 NC @ 10 V ± 25 V 910 PF @ 25 V. - - - 2,5 W (TA), 55 W (TC)
RFP50N06_F102 Fairchild Semiconductor RFP50N06_F102 - - -
RFQ
 ECAD 9875 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8541.29.0095 1 N-Kanal 60 v 50a (TC) 10V 22mohm @ 50a, 10V 4v @ 250 ähm 150 NC @ 20 V ± 20 V 2020 PF @ 25 V - - - 131W (TC)
HUF75329P3 Fairchild Semiconductor HUF75329P3 - - -
RFQ
 ECAD 9487 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Rohs Nick Konform Ear99 8541.29.0095 400 N-Kanal 55 v 42a (TC) 25mohm @ 42a, 10V 4v @ 250 ähm 75 NC @ 20 V ± 20 V 1060 PF @ 25 V. - - - 94W (TC)
HUFA75309P3 Fairchild Semiconductor HUFA75309P3 0,2500
RFQ
 ECAD 13 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 N-Kanal 55 v 19A (TC) 10V 70 MOHM @ 19A, 10V 4v @ 250 ähm 24 NC @ 20 V ± 20 V 350 PF @ 25 V. - - - 55W (TC)
IRFW530ATM Fairchild Semiconductor Irfw530atm 0,3000
RFQ
 ECAD 2 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 1 N-Kanal 100 v 14a (TC) 10V 110Mohm @ 7a, 10V 4v @ 250 ähm 36 NC @ 10 V ± 20 V 790 PF @ 25 V. - - - 3,8 W (TA), 55 W (TC)
ISL9V3040S3ST Fairchild Semiconductor ISL9V3040S3ST 1.2100
RFQ
 ECAD 1475 0.00000000 Fairchild Semiconductor ECOSPARK® Schüttgut Aktiv -40 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab Logik 150 w D2pak (to-263) Herunterladen Ear99 8542.39.0001 1 300 V, 1kohm, 5V - - - 430 v 21 a 1,6 V @ 4V, 6a - - - 17 NC -/4,8 µs
FQA14N30 Fairchild Semiconductor FQA14N30 1.7300
RFQ
 ECAD 230 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3, SC-65-3 MOSFET (Metalloxid) To-3p Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 450 N-Kanal 300 V 15a (TC) 10V 290MOHM @ 7,5A, 10 V. 5 V @ 250 ähm 40 nc @ 10 v ± 30 v 1360 PF @ 25 V. - - - 160W (TC)
KSC2330RTA Fairchild Semiconductor KSC2330RTA - - -
RFQ
 ECAD 1943 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) 1 w To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0075 2.000 300 V 100 ma 100NA (ICBO) Npn 500mv @ 1ma, 10 mA 40 @ 20 mA, 10V 50 MHz
FDBL86210 Fairchild Semiconductor FDBL86210 - - -
RFQ
 ECAD 8016 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv FDBL862 - - - - - - Nicht Anwendbar 1 (unbegrenzt) Verkäfer undefiniert Ear99 8542.39.0001 2.000 - - -
KSC5504DTTU Fairchild Semiconductor KSC5504DTTU 0,2200
RFQ
 ECAD 13 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch To-220-3 75 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 600 V 4 a 100 µA Npn 1,5 V @ 400 mA, 2a 4 @ 2a, 1V 11 MHz
FQB17P10TM Fairchild Semiconductor FQB17P10TM 1.0100
RFQ
 ECAD 5526 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 281 P-Kanal 100 v 16,5a (TC) 10V 190MOHM @ 8.25A, 10V 4v @ 250 ähm 39 NC @ 10 V. ± 30 v 1100 PF @ 25 V. - - - 3,75 W (TA), 100 W (TC)
FGI3040G2-F085 Fairchild Semiconductor FGI3040G2-F085 - - -
RFQ
 ECAD 5990 0.00000000 Fairchild Semiconductor Automotive, AEC-Q101, EcoSospark® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa Logik 150 w I2pak (to-262) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 1 300 V, 6,5a, 1kohm, 5 V. 1,9 µs - - - 400 V 41 a 1,25 V @ 4V, 6a - - - 21 NC -/4,8 µs
FDB8878 Fairchild Semiconductor FDB8878 - - -
RFQ
 ECAD 9640 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) - - - ROHS3 -KONFORM Ear99 8541.29.0095 800 N-Kanal 30 v 48a (TC) 4,5 V, 10 V. 14mohm @ 40a, 10V 2,5 V @ 250 ähm 23 NC @ 10 V ± 20 V 1235 PF @ 15 V - - - 47,3W (TC)
FDY301NZ Fairchild Semiconductor Fdy301nz - - -
RFQ
 ECAD 6207 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung SC-89, SOT-490 MOSFET (Metalloxid) SOT-523F Herunterladen Ear99 8542.39.0001 1 N-Kanal 20 v 200 Ma (TA) 1,5 V, 4,5 V. 5OHM @ 200 Ma, 4,5 V. 1,5 V @ 250 ähm 1,1 NC @ 4,5 V. ± 12 V 60 PF @ 10 V - - - 625 MW (TA)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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