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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Strom Abfluss (ID) - Maximal |
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![]() | HUFA75433S3ST | 1.1800 | ![]() | 520 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-HUFA75433S3ST | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 64a (TC) | 10V | 16mohm @ 64a, 10V | 4v @ 250 ähm | 117 NC @ 20 V | ± 20 V | 1550 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||||||
![]() | FQB8P10TM | - - - | ![]() | 5986 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 100 v | 8a (TC) | 10V | 530mohm @ 4a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 30 v | 470 PF @ 25 V. | - - - | 3,75W (TA), 65W (TC) | |||||||||||||||||||||||||||
![]() | FDS6930a | 0,3400 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS6930 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 946 | 2 n-kanal (dual) | 30V | 5.5a | 40mohm @ 5,5a, 10V | 3v @ 250 ähm | 7nc @ 5v | 460PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||||||
![]() | FJZ594JBTF | 0,0200 | ![]() | 687 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SOT-623F | 100 MW | SOT-623F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 3.5PF @ 5v | 20 v | 150 µa @ 5 V | 600 mV @ 1 µA | 1 Ma | |||||||||||||||||||||||||||||||
![]() | HUF75842p3 | - - - | ![]() | 1670 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 43a (TC) | 10V | 42mohm @ 43a, 10V | 4v @ 250 ähm | 175 NC @ 20 V | ± 20 V | 2730 PF @ 25 V. | - - - | 230W (TC) | |||||||||||||||||||||||||||
![]() | FJN4310RBU | 0,0200 | ![]() | 39 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | Fjn431 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 40 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 200 MHz | 10 Kohms | |||||||||||||||||||||||||||||
![]() | SSI7N60BTU | 0,3900 | ![]() | 964 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 7a (TC) | 10V | 1,2OHM @ 3,5a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 30 v | 1800 PF @ 25 V. | - - - | 3.13W (TA), 147W (TC) | ||||||||||||||||||||||||
![]() | ISL9N312AD3STNL | - - - | ![]() | 6060 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 150 | N-Kanal | 30 v | 50a (TC) | 12mohm @ 50a, 10V | 3v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1450 PF @ 15 V | - - - | 75W (TA) | |||||||||||||||||||||||||
![]() | 2N7002-g | - - - | ![]() | 4946 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 2N7002 | MOSFET (Metalloxid) | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-2N7002-G | Ear99 | 8541.21.0095 | 1 | N-Kanal | 60 v | 115 Ma (TC) | 5v, 10V | 7.5OHM @ 500 mA, 10V | 2,5 V @ 250 ähm | ± 20 V | 50 PF @ 25 V. | - - - | 200 MW (TC) | ||||||||||||||||||||||||
![]() | FDMS3602s | 1.7100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3602 | MOSFET (Metalloxid) | 1W | Power56 | Herunterladen | Ear99 | 8542.39.0001 | 192 | 2 n-kanal (dual) | 25 v | 15a, 26a | 5.6mohm @ 15a, 10V | 3v @ 250 ähm | 27nc @ 10v | 1680pf @ 13v | Logikpegel -tor | ||||||||||||||||||||||||||||
![]() | TIP41CTU | - - - | ![]() | 4398 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 100 v | 6 a | 700 ähm | Npn | 1,5 V @ 600 Ma, 6a | 30 @ 300 mA, 4V | 3MHz | ||||||||||||||||||||||||||||
![]() | Fqu3p20TU | 1.0100 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | P-Kanal | 200 v | 2.4a (TC) | 10V | 2,7OHM @ 1,2a, 10V | 5 V @ 250 ähm | 8 NC @ 10 V | ± 30 v | 250 PF @ 25 V. | - - - | 2,5 W (TA), 37W (TC) | ||||||||||||||||||||||||||
![]() | BC857C | 0,0700 | ![]() | 6936 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC857 | 250 MW | SOT-23-3 (to-236) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 3.000 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 100 MHz | |||||||||||||||||||||||||||
![]() | KSA812LMTF | 0,0600 | ![]() | 7500 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 150 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4,527 | 50 v | 100 ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 300 @ 1ma, 6v | 180 MHz | ||||||||||||||||||||||||||||||
![]() | KSC1008OTA | 0,1500 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 70 @ 50 Ma, 2V | 50 MHz | ||||||||||||||||||||||||||||||
![]() | PN3642 | 0,0500 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 45 V | 500 mA | 50na | Npn | 220 MV @ 15ma, 150 mA | 40 @ 150 mA, 10V | - - - | ||||||||||||||||||||||||||||||
![]() | MPSA93 | 0,0700 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 200 v | 500 mA | 250na (ICBO) | PNP | 400mv @ 2MA, 20 mA | 25 @ 30 Ma, 10V | 50 MHz | ||||||||||||||||||||||||||||||
![]() | FDB8876 | 0,4800 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 71a (TC) | 4,5 V, 10 V. | 8.5Mohm @ 40a, 10V | 2,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1700 PF @ 15 V | - - - | 70W (TC) | ||||||||||||||||||||||||||
![]() | FDS6676s | 0,6400 | ![]() | 47 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 14,5a (ta) | 4,5 V, 10 V. | 7,5 MOHM @ 14,5A, 10V | 3V @ 1ma | 60 NC @ 5 V | ± 16 v | 4665 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||||
![]() | MMBTA14-NB05232 | 0,1400 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.21.0075 | 3.000 | ||||||||||||||||||||||||||||||||||||||||
![]() | BC33725TFR | 0,0400 | ![]() | 59 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.071 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||
![]() | FDP7042L | 0,6600 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 50a (ta) | 4,5 V, 10 V. | 7.5Mohm @ 25a, 10V | 2v @ 250 mA | 51 NC @ 4,5 V. | ± 12 V | 2418 PF @ 15 V | - - - | 83W (TA) | ||||||||||||||||||||||||
![]() | FQP16N15 | 0,6400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 150 v | 16,4a (TC) | 10V | 160 MOHM @ 8.2a, 10V | 4v @ 250 ähm | 30 NC @ 10 V | ± 25 V | 910 PF @ 25 V. | - - - | 108W (TC) | ||||||||||||||||||||||||||
![]() | FQA90N10V2 | 4.0500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 100 v | 105a (TC) | 10V | 10MOHM @ 52,5a, 10V | 4v @ 250 ähm | 191 NC @ 10 V. | ± 30 v | 6150 PF @ 25 V. | - - - | 330W (TC) | ||||||||||||||||||||||||||
![]() | SFI9510TU | 0,7300 | ![]() | 950 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 3.6a (TC) | 10V | 1,2OHM @ 1,8a, 10V | 4v @ 250 ähm | 10 nc @ 10 v | ± 30 v | 335 PF @ 25 V. | - - - | 3,8 W (TA), 32W (TC) | ||||||||||||||||||||||||
![]() | FCP400N80Z | - - - | ![]() | 1882 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 126 | N-Kanal | 800 V | 14a (TC) | 10V | 400MOHM @ 5.5A, 10V | 4,5 V @ 1,1 Ma | 56 NC @ 10 V | ± 20 V | 2350 PF @ 1 V. | - - - | 195W (TC) | |||||||||||||||||||||||||||
![]() | Isl9v3036d3st | 1.9600 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Veraltet | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Logik | 150 w | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 300 V, 1kohm, 5V | - - - | 360 V | 21 a | 1,6 V @ 4V, 6a | - - - | 17 NC | -/4,8 µs | ||||||||||||||||||||||||||||
![]() | SS9015CBU | 0,0200 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 50na (ICBO) | PNP | 700 mv @ 5ma, 100 mA | 200 @ 1ma, 5V | 190 MHz | ||||||||||||||||||||||||||||||
![]() | KSC2328AOBU | 0,0500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 6,107 | 30 v | 2 a | 100NA (ICBO) | Npn | 2v @ 30 mA, 1,5a | 100 @ 500 mA, 2V | 120 MHz | ||||||||||||||||||||||||||||||
![]() | FDMS0308Cs | 1,5000 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 22a (ta) | 3mohm @ 21a, 10V | 3V @ 1ma | 66 NC @ 10 V | 4225 PF @ 15 V | - - - | 2,5 W (TA), 65 W (TC) |
Täglich durchschnittliches RFQ -Volumen
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