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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Spannung - Bewort | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Frequenz | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Aktuelle Bewertung (Verstärker) | Testedingung | Leistung - Ausgabe | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | RAUSCHFIGUR | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | SMUN5215T1G | 1.0000 | ![]() | 8891 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 2156-Smun5215T1G-600039 | Ear99 | 8541.21.0095 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF75345p3 | - - - | ![]() | 6800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-HUF75345p3-600039 | 1 | N-Kanal | 55 v | 75a (TC) | 10V | 7mohm @ 75a, 10V | 4v @ 250 ähm | 275 NC @ 20 V | ± 20 V | 4000 PF @ 25 V. | - - - | 325W (TC) | |||||||||||||||||||||||||||||||||||
![]() | IRFN214BTA | 0,1800 | ![]() | 152 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | IRFN214 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1.664 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | SFP9520 | 0,1900 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 6a (TC) | 10V | 600mohm @ 3a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 550 PF @ 25 V. | - - - | 49W (TC) | |||||||||||||||||||||||||||||||||
![]() | 2N4126 | 0,0200 | ![]() | 75 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1 | 25 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 250 MHz | |||||||||||||||||||||||||||||||||||||
![]() | FMM7G50US60i | 28.1700 | ![]() | 31 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | Modul | 139 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-FMM7G50US60i | Ear99 | 8541.29.0095 | 1 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 50 a | 2,7 V @ 15V, 50a | 250 µA | Ja | 3.565 NF @ 30 V | |||||||||||||||||||||||||||||||||||
![]() | 2N5246 | 0,3000 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 30 v | K. Loch | To-226-3, bis 92-3 (to-226aa) | - - - | Jfet | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 7ma | - - - | - - - | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | Ssp3n80a | - - - | ![]() | 1457 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 800 V | 3a (TC) | 10V | 4,8ohm @ 850 mA, 10 V | 3,5 V @ 250 ähm | 35 NC @ 10 V | ± 30 v | 750 PF @ 25 V. | - - - | 100 W (TC) | |||||||||||||||||||||||||||||||||
![]() | FDPC1012s | 0,4300 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDPC1 | MOSFET (Metalloxid) | 800 MW (TA), 900 MW (TA) | Powerclip-33 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 428 | 2 N-Kanal (Dual) Asymmetrisch | 25 v | 13a (ta), 35a (TC), 26a (TA), 88a (TC) | 7mohm @ 12a, 4,5 V, 2,2 Mohm @ 23A, 4,5 V. | 2,2 V @ 250 µA, 2,2 V @ 1ma | 8nc @ 4,5V, 25nc @ 4,5 V. | 1075PF @ 13V, 3456Pf @ 13V | - - - | ||||||||||||||||||||||||||||||||||
![]() | BD435S | - - - | ![]() | 9366 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | BD435 | 36 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 32 v | 4 a | 100 µA | Npn | 500mv @ 200 Ma, 2a | 40 @ 10ma, 5V | 3MHz | ||||||||||||||||||||||||||||||||||||
![]() | Fqpf2n90 | 1.2000 | ![]() | 52 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 900 V | 1.4a (TC) | 10V | 7.2OHM @ 700 mA, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 500 PF @ 25 V. | - - - | 35W (TC) | |||||||||||||||||||||||||||||||||||
![]() | BCX17 | 0,0500 | ![]() | 160 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX17 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 500 mA | 100NA (ICBO) | PNP | 620 MV @ 50 Ma, 500 mA | 100 @ 100 mA, 1V | - - - | ||||||||||||||||||||||||||||||||||||
![]() | FDD3672-F085 | - - - | ![]() | 7875 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101, Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDD3672-F085-600039 | 1 | N-Kanal | 100 v | 44a (TC) | 6 V, 10V | 47mohm @ 21a, 6v | 4v @ 250 ähm | 36 NC @ 10 V | ± 20 V | 1635 PF @ 25 V. | - - - | 144W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FQP5N20L | 0,2900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 4,5a (TC) | 5v, 10V | 1,2OHM @ 2,25A, 10V | 2v @ 250 ähm | 6.2 NC @ 5 V. | ± 20 V | 325 PF @ 25 V. | - - - | 52W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Fjn3303bu | - - - | ![]() | 6963 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1,1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 400 V | 1,5 a | 10 µA (ICBO) | Npn | 3v @ 500 mA, 1,5a | 14 @ 500 mA, 2V | 4MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FDS8958 | 1.0000 | ![]() | 3491 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS89 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1 | N und p-kanal | 30V | 7a, 5a | 28mohm @ 7a, 10V | 3v @ 250 ähm | 26nc @ 10v | 789PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||
![]() | FDD4243 | - - - | ![]() | 4995 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 40 v | 6.7a (TA), 14a (TC) | 4,5 V, 10 V. | 44mohm @ 6.7a, 10V | 3v @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1550 PF @ 20 V | - - - | 42W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FDS86267p | 1.0000 | ![]() | 3306 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 150 v | 2.2a (TA) | 6 V, 10V | 255mohm @ 2,2a, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 25 V | 1130 PF @ 75 V | - - - | 1W (TA) | ||||||||||||||||||||||||||||||||||||
![]() | KST63MTF | - - - | ![]() | 1399 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 500 mA | 100NA (ICBO) | PNP - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BC560CBU | - - - | ![]() | 5993 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FQA18N50V2 | 2.8400 | ![]() | 380 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | N-Kanal | 500 V | 20A (TC) | 10V | 265mohm @ 10a, 10V | 5 V @ 250 ähm | 55 NC @ 10 V | ± 30 v | 3290 PF @ 25 V. | - - - | 277W (TC) | |||||||||||||||||||||||||||||||||||
![]() | SS8550BTA | 0,0200 | ![]() | 3697 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 2.000 | 25 v | 1,5 a | 100NA (ICBO) | PNP | 500mv @ 80 mA, 800 mA | 85 @ 100 mA, 1V | 200 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | KSC1008YBU | 0,0600 | ![]() | 390 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 5,323 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 120 @ 50 Ma, 2V | 50 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | PN5432 | 1.0000 | ![]() | 8043 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 30pf @ 10v (VGS) | 25 v | 150 mA @ 15 V | 4 v @ 3 na | 5 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | KSD1616GTA | - - - | ![]() | 7609 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 50 v | 1 a | 100NA (ICBO) | Npn | 300 mV @ 50 Ma, 1a | 200 @ 100 Ma, 2V | 160 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | Hufa76619d3st | 0,3600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 18a (TC) | 4,5 V, 10 V. | 85mohm @ 18a, 10V | 3v @ 250 ähm | 29 NC @ 10 V | ± 16 v | 767 PF @ 25 V. | - - - | 75W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FGPF90N30 | 0,9600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 56,8 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1 | - - - | - - - | 300 V | 220 a | 1,55 V @ 15V, 30a | - - - | 93 NC | - - - | |||||||||||||||||||||||||||||||||||||
![]() | FQP6N25 | 0,3100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 250 V | 5.5a (TC) | 10V | 1OHM @ 2,75a, 10V | 5 V @ 250 ähm | 8,5 NC @ 10 V | ± 30 v | 300 PF @ 25 V. | - - - | 63W (TC) | |||||||||||||||||||||||||||||||||||
![]() | KSD1621UTF | 0,1000 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 25 v | 2 a | 100NA (ICBO) | Npn | 400mv @ 75 mA, 1,5a | 280 @ 100 mA, 2V | 150 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BC556BBU | 0,0200 | ![]() | 6062 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 12.695 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus