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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Spannung - Bewort | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Frequenz | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Aktuelle Bewertung (Verstärker) | Testedingung | Leistung - Ausgabe | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | RAUSCHFIGUR | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Test | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FJP52000TU | 1.0000 | ![]() | 5408 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 1 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9V5045S3ST | - - - | ![]() | 6049 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Logik | 300 w | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 30 | 300 V, 1kohm, 5V | - - - | 480 v | 51 a | 1,6 V @ 4V, 10a | - - - | 32 NC | -/10,8 µs | |||||||||||||||||||||||||||||||||
![]() | Fqpf11p06 | 0,6200 | ![]() | 552 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 552 | P-Kanal | 60 v | 8.6a (TC) | 10V | 175mohm @ 4,3a, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 25 V | 550 PF @ 25 V. | - - - | 30W (TC) | |||||||||||||||||||||||||||||||
![]() | FDPF16N50UT | 1.2300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 15a (TC) | 10V | 480MOHM @ 7,5a, 10V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 1945 PF @ 25 V. | - - - | 38,5W (TC) | |||||||||||||||||||||||||||||||
FDW262p | 0,5700 | ![]() | 178 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 20 v | 4,5a (TA) | 1,8 V, 4,5 V. | 47mohm @ 4,5a, 4,5 V. | 1,5 V @ 250 ähm | 18 NC @ 4,5 V. | ± 8 v | 1193 PF @ 10 V | - - - | 1,3W (TA) | |||||||||||||||||||||||||||||||
![]() | Fdj1028n | 0,2900 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-75-6 FLMP | FDJ1028 | MOSFET (Metalloxid) | 1,5W | SC75-6 FLMP | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 20V | 3.2a | 90 MOHM @ 3,2A, 4,5 V. | 1,5 V @ 250 ähm | 3nc @ 4,5V | 200pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||||
![]() | FJN4302RTA | 0,0300 | ![]() | 7488 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | FJN430 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 472 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 200 MHz | 10 Kohms | 10 Kohms | ||||||||||||||||||||||||||||||
![]() | Fqpf6n70 | 0,9600 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 700 V | 3,5a (TC) | 10V | 1,5OHM @ 1,75a, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1400 PF @ 25 V. | - - - | 48W (TC) | ||||||||||||||||||||||||||||||
![]() | FJE3303H2TU | 0,2500 | ![]() | 31 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 20 w | To-126-3 | Herunterladen | Ear99 | 8542.39.0001 | 1,212 | 400 V | 1,5 a | 10 µA (ICBO) | Npn | 3v @ 500 mA, 1,5a | 14 @ 500 mA, 2V | 4MHz | |||||||||||||||||||||||||||||||||||
![]() | BF721T1G | - - - | ![]() | 2316 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1,5 w | SOT-223 (to-261) | Herunterladen | Ear99 | 8541.29.0075 | 1 | 300 V | 50 ma | 10NA (ICBO) | PNP | 800mv @ 5ma, 30 mA | 50 @ 25ma, 20V | 60 MHz | |||||||||||||||||||||||||||||||||||
![]() | NDS8934 | 0,5700 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS893 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 p-kanal (dual) | 20V | 3.8a | 70 MOHM @ 3,8a, 4,5 V. | 1V @ 250 ähm | 30nc @ 4,5V | 1120pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||||
![]() | BC557BTF | - - - | ![]() | 5902 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 934 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | |||||||||||||||||||||||||||||||||||
![]() | RFP15N05L | 0,8500 | ![]() | 32 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 400 | N-Kanal | 50 v | 15a (TC) | 140mohm @ 15a, 5V | 2v @ 250 ähm | ± 10 V | 900 PF @ 25 V. | - - - | 60 W (TC) | ||||||||||||||||||||||||||||||||
![]() | HUF76419D3STR4921 | 0,5100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 37mohm @ 20a, 10V | 3v @ 250 ähm | 27,5 NC @ 10 V. | ± 16 v | 900 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||||||||||
![]() | MMBT5962 | - - - | ![]() | 5656 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | Ear99 | 8541.21.0095 | 1 | 45 V | 100 ma | 2na (ICBO) | Npn | 200 MV @ 500 µA, 10 mA | 600 @ 10ma, 5V | - - - | |||||||||||||||||||||||||||||||||||
![]() | MPSA56 | - - - | ![]() | 3175 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 5.115 | 80 v | 500 mA | 100na | PNP | 200mv @ 10ma, 100 mA | 100 @ 100 mA, 1V | 50 MHz | ||||||||||||||||||||||||||||||||||
![]() | FDMS0300S | - - - | ![]() | 4511 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 31a (ta), 49a (TC) | 4,5 V, 10 V. | 1,8 MOHM @ 30a, 10V | 3V @ 1ma | 133 NC @ 10 V | ± 20 V | 8705 PF @ 15 V | - - - | 2,5 W (TA), 96W (TC) | |||||||||||||||||||||||||||||||
![]() | FJP2145TU | 1.0000 | ![]() | 4498 | 0.00000000 | Fairchild Semiconductor | ESBC ™ | Schüttgut | Aktiv | -55 ° C ~ 125 ° C (TJ) | K. Loch | To-220-3 | FJP214 | 120 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 800 V | 5 a | 10 µA (ICBO) | Npn | 2v @ 300 mA, 1,5a | 20 @ 200 Ma, 5V | 15 MHz | |||||||||||||||||||||||||||||||
![]() | FQA10N80C | - - - | ![]() | 6988 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1 | N-Kanal | 800 V | 10a (TC) | 10V | 1,1ohm @ 5a, 10V | 5 V @ 250 ähm | 58 NC @ 10 V | ± 30 v | 2800 PF @ 25 V. | - - - | 240W (TC) | ||||||||||||||||||||||||||||||
![]() | Fqpf5n50 | 0,5300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 3a (TC) | 10V | 1,8OHM @ 1,5a, 10 V | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 610 PF @ 25 V. | - - - | 39W (TC) | ||||||||||||||||||||||||||||||
![]() | KST92MTF | - - - | ![]() | 7917 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KST92 | 250 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.000 | 300 V | 500 mA | 250na (ICBO) | PNP | 500 mv @ 2MA, 20 mA | 25 @ 30 Ma, 10V | 50 MHz | |||||||||||||||||||||||||||||||
![]() | MMBF5484 | - - - | ![]() | 6373 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 25 v | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 400 MHz | Jfet | SOT-23-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 5ma | - - - | - - - | 4db | 15 v | |||||||||||||||||||||||||||||||||||
![]() | SGH40N60UFTU | 3.7900 | ![]() | 900 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | SGH40N60 | Standard | 160 w | To-3p | Herunterladen | Ear99 | 8541.29.0095 | 1 | 300 V, 20a, 10ohm, 15 V. | - - - | 600 V | 40 a | 160 a | 2,6 V @ 15V, 20a | 160 µJ (EIN), 200 µJ (AUS) | 97 NC | 15ns/65ns | |||||||||||||||||||||||||||||||
![]() | 2SA1381CSTU | 0,1000 | ![]() | 7907 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 7 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 400 | 300 V | 100 ma | 100NA (ICBO) | PNP | 600mv @ 2MA, 20 mA | 40 @ 10 ma, 10V | 150 MHz | ||||||||||||||||||||||||||||||||||
![]() | IRFW730BTMNL | 0,5900 | ![]() | 49 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 400 V | 5.5a (TC) | 10V | 1OHM @ 2,75a, 10V | 4v @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1000 PF @ 25 V. | - - - | 3.13W (TA), 73W (TC) | ||||||||||||||||||||||||||||
![]() | FDMC7200 | - - - | ![]() | 9382 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDMC72 | MOSFET (Metalloxid) | 700 MW, 900 MW | 8-Power33 (3x3) | Herunterladen | Ear99 | 8541.29.0095 | 1 | 2 n-kanal (dual) | 30V | 6a, 8a | 23,5 Mohm @ 6a, 10V | 3v @ 250 ähm | 10nc @ 10v | 660PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||||||||||
![]() | FDMS0349 | 0,1800 | ![]() | 215 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6), Power56 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 14A (TA), 20A (TC) | 4,5 V, 10 V. | 8mohm @ 14a, 10V | 3v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 1410 PF @ 15 V | - - - | 2,5 W (TA), 27W (TC) | |||||||||||||||||||||||||||||||
![]() | FQP18N50V2 | 4.0400 | ![]() | 590 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 18a (TC) | 10V | 265mohm @ 9a, 10V | 5 V @ 250 ähm | 55 NC @ 10 V | ± 30 v | 3290 PF @ 25 V. | - - - | 208W (TC) | ||||||||||||||||||||||||||||||
![]() | HUF75531SK8T | - - - | ![]() | 5192 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 80 v | 6a (ta) | 10V | 30mohm @ 6a, 10V | 4v @ 250 ähm | 82 NC @ 20 V | ± 20 V | 1210 PF @ 25 V. | - - - | 2,5 W (TA) | ||||||||||||||||||||||||||||||
![]() | FDU6688 | 1.3900 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 30 v | 84a (ta) | 4,5 V, 10 V. | 5mohm @ 18a, 10V | 3v @ 250 ähm | 56 NC @ 5 V. | ± 20 V | 3845 PF @ 15 V | - - - | 83W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus