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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkt (Hfe) (min) @ ic, vce | Frequenz - übergang |
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![]() | BC80740 | 0,0700 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC807 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||
![]() | HGTP3N60A4 | - - - | ![]() | 2404 | 0.00000000 | Fairchild Semiconductor | SMPS | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Standard | 70 w | To-220-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-HGTP3N60A4-600039 | 1 | 390 V, 3a, 50 Ohm, 15 V | - - - | 600 V | 17 a | 40 a | 2,7 V @ 15V, 3a | 37 µJ (EIN), 25 µJ (AUS) | 21 NC | 6ns/73ns | ||||||||||||||||||||||||||
![]() | FDD9409 | - - - | ![]() | 6158 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDD940 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 1 | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | Fp210-tl-e | 0,2400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FP210-TL-E-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||
![]() | FDMS3604As | 1.3100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3604 | MOSFET (Metalloxid) | 1W | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (Dual) Asymmetrisch | 30V | 13a, 23a | 8mohm @ 13a, 10V | 2,7 V @ 250 ähm | 29nc @ 10v | 1695PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | FJPF13007TU | 0,2900 | ![]() | 8670 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 40 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 400 V | 8 a | - - - | Npn | 3v @ 2a, 8a | 8 @ 2a, 5V | 4MHz | |||||||||||||||||||||||||||||
![]() | RFD3055 | 0,1900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 75 | N-Kanal | 60 v | 12a (TC) | 10V | 150 MOHM @ 12A, 10V | 4v @ 250 ähm | 23 NC @ 20 V | ± 20 V | 300 PF @ 25 V. | - - - | 53W (TC) | |||||||||||||||||||||||||
![]() | HUF76131SK8T_NB82084 | - - - | ![]() | 8464 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUF76131 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 1 | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FMC7G15US60 | - - - | ![]() | 4427 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 45 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 4 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 15 a | 2,8 V @ 15V, 15a | 250 µA | NEIN | 948 PF @ 30 V | |||||||||||||||||||||||||
![]() | KSA733GTA | 0,0200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | KSA733 | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 40 @ 1ma, 6v | 180 MHz | ||||||||||||||||||||||||||
![]() | BCP68 | 0,0500 | ![]() | 125 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1,5 w | SOT-223-4 | - - - | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-BCP68-600039 | 1 | 20 v | 1 a | 10 µA (ICBO) | Npn | 500mv @ 100 mA, 1a | 85 @ 500 mA, 1V | - - - | |||||||||||||||||||||||||||||
![]() | HUFA76432S3ST | 0,5100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 59a (TC) | 4,5 V, 10 V. | 17mohm @ 59a, 10V | 3v @ 250 ähm | 53 NC @ 10 V | ± 16 v | 1765 PF @ 25 V. | - - - | 130W (TC) | |||||||||||||||||||||||||
![]() | FQD3N30TF | 0,2900 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 300 V | 2.4a (TC) | 10V | 2,2OHM @ 1,2a, 10 V | 5 V @ 250 ähm | 7 NC @ 10 V | ± 30 v | 230 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | |||||||||||||||||||||||||
![]() | BC80825MTF | 0,0400 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 25 v | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||
![]() | MJD32CTM | - - - | ![]() | 4788 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | To-252-3 (dpak) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 2.500 | 100 v | 3 a | 50 µA | PNP | 1,2 V @ 375 Ma, 3a | 10 @ 3a, 4V | 3MHz | |||||||||||||||||||||||||||||
![]() | BC337 | 1.0000 | ![]() | 6122 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 210 MHz | |||||||||||||||||||||||||||||
![]() | FDI038AN06A0_NL | 3.8100 | ![]() | 169 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 17A (TA), 80A (TC) | 6 V, 10V | 3,8 MOHM @ 80A, 10V | 4v @ 250 ähm | 124 NC @ 10 V | ± 20 V | 6400 PF @ 25 V. | - - - | 310W (TC) | |||||||||||||||||||||||
![]() | HUF75321P3 | 0,6400 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 468 | N-Kanal | 55 v | 35a (TC) | 10V | 34mohm @ 35a, 10V | 4v @ 250 ähm | 44 NC @ 20 V | ± 20 V | 680 PF @ 25 V. | - - - | 93W (TC) | ||||||||||||||||||||||||||
![]() | MPSA43 | 0,0700 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 200 v | 500 mA | 100NA (ICBO) | Npn | 500 mv @ 2MA, 20 mA | 25 @ 1ma, 10V | 50 MHz | |||||||||||||||||||||||||||||
![]() | NDS8947 | 0,9700 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS894 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 p-kanal (dual) | 30V | 4a | 65mohm @ 4a, 10V | 2,8 V @ 250 ähm | 30nc @ 10v | 690PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | HUFA75321S3ST | 0,7700 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 35a (TC) | 10V | 34mohm @ 35a, 10V | 4v @ 250 ähm | 44 NC @ 20 V | ± 20 V | 680 PF @ 25 V. | - - - | 93W (TC) | |||||||||||||||||||||||||
![]() | HUF75339G3 | 1.1300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 300 | N-Kanal | 55 v | 75a (TC) | 10V | 12mohm @ 75a, 10V | 4v @ 250 ähm | 130 NC @ 20 V | ± 20 V | 2000 PF @ 25 V. | - - - | 200W (TC) | |||||||||||||||||||||||||
![]() | FDS6892A | 0,5600 | ![]() | 66 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS68 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8541.21.0095 | 1 | 2 n-kanal (dual) | 20V | 7.5a | 18mohm @ 7,5a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1333pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||
FDW2507N | 0,5100 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 1.1W | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 20V | 7.5a | 19mohm @ 7,5a, 4,5 V. | 1,5 V @ 250 ähm | 28nc @ 4,5V | 2152pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | FDS6982 | - - - | ![]() | 3920 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 30V | 6,3a, 8,6a | 28mohm @ 6.3a, 10V | 3v @ 250 ähm | 12nc @ 5v | 760PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | KSD261CGTA | 0,0300 | ![]() | 163 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 20 v | 500 mA | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 200 @ 100ma, 1V | - - - | |||||||||||||||||||||||||||
![]() | FPF1C2P5BF07A | 71.4300 | ![]() | 433 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | F1 -modul | FPF1C2 | MOSFET (Metalloxid) | 250W | F1 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 5 N-Kanal (Solarwechselrichter) | 650 V | 36a | 90 MOHM @ 27A, 10V | 3,8 V @ 250 ähm | - - - | - - - | - - - | |||||||||||||||||||||||||||
![]() | 2N6520ta | 1.0000 | ![]() | 5741 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 2N6520 | 625 MW | To-92-3 | Herunterladen | 0000.00.0000 | 1 | 350 V | 500 mA | 50na (ICBO) | PNP | 1v @ 5 ma, 50 mA | 20 @ 50 Ma, 10 V | 200 MHz | ||||||||||||||||||||||||||||||
![]() | HUF76143S3 | 0,7500 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||||||||
![]() | FDU8896_NL | 1.0000 | ![]() | 1286 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 17a (ta), 94a (TC) | 4,5 V, 10 V. | 5.7mohm @ 35a, 10V | 2,5 V @ 250 ähm | 60 nc @ 10 v | ± 20 V | 2525 PF @ 15 V | - - - | 80W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
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