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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FDB8445-F085 | 1.0000 | ![]() | 7636 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 70a (TC) | 10V | 9mohm @ 70a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 20 V | 3805 PF @ 25 V. | - - - | 92W (TC) | ||||||||||||||||||||||||||||
![]() | Hufa76619d3st | 0,3600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 18a (TC) | 4,5 V, 10 V. | 85mohm @ 18a, 10V | 3v @ 250 ähm | 29 NC @ 10 V | ± 16 v | 767 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||||||||||
![]() | FDP15N50 | 2.0600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 500 V | 15a (TC) | 10V | 380MOHM @ 7,5a, 10V | 4v @ 250 ähm | 41 nc @ 10 v | ± 30 v | 1850 PF @ 25 V. | - - - | 300 W (TC) | ||||||||||||||||||||||||||||
![]() | SFM9110TF | 0,4800 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | MOSFET (Metalloxid) | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 4.000 | P-Kanal | 100 v | 1a (ta) | 10V | 1,2OHM @ 500 mA, 10 V. | 4v @ 250 ähm | 10 nc @ 10 v | ± 30 v | 335 PF @ 25 V. | - - - | 2,52W (TA) | ||||||||||||||||||||||||||||
![]() | SGL25N120RUFTU | 1.0000 | ![]() | 6403 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | SGL25N | Standard | 270 w | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 600 V, 25a, 10ohm, 15 V. | - - - | 1200 V | 40 a | 75 a | 3v @ 15V, 25a | 1,6mj (Ein), 1,63 MJ (AUS) | 165 NC | 30ns/70ns | |||||||||||||||||||||||||||
![]() | FDH50N50 | 10.3700 | ![]() | 761 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 48a (TC) | 10V | 105mohm @ 24a, 10V | 5 V @ 250 ähm | 137 NC @ 10 V | ± 30 v | 6460 PF @ 25 V. | - - - | 625W (TC) | ||||||||||||||||||||||||||||
![]() | HUF75545S3ST_NL | - - - | ![]() | 9240 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 80 v | 75a (TC) | 10V | 10MOHM @ 75A, 10V | 4v @ 250 ähm | 235 NC @ 20 V | ± 20 V | 3750 PF @ 25 V. | - - - | 270W (TC) | ||||||||||||||||||||||||||
![]() | KSE3055T | 1.0000 | ![]() | 8145 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 600 MW | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 200 | 60 v | 10 a | 700 ähm | Npn | 8v @ 3,3a, 10a | 20 @ 4a, 4V | 2MHz | ||||||||||||||||||||||||||||||||
![]() | U1898 | 0,0600 | ![]() | 9606 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.841 | N-Kanal | 16PF @ 20V | 40 v | 15 mA @ 20 V | 2 V @ 1 na | 50 Ohm | |||||||||||||||||||||||||||||||||
![]() | Fqu6n25tu | 0,5500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 250 V | 4.4a (TC) | 10V | 1OHM @ 2,2a, 10V | 5 V @ 250 ähm | 8,5 NC @ 10 V | ± 30 v | 300 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | ||||||||||||||||||||||||||||
![]() | MPSA10 | 0,0200 | ![]() | 7589 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.21.0095 | 1.660 | 40 v | 100 ma | 100NA (ICBO) | Npn | - - - | 40 @ 5 µA, 10 V. | 125 MHz | ||||||||||||||||||||||||||||||||
![]() | Fjy3015r | 0,0200 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | FJY301 | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 33 @ 10ma, 5v | 250 MHz | 2.2 Kohms | 10 Kohms | |||||||||||||||||||||||||||||||
![]() | FCH125N60E | 1.0000 | ![]() | 7379 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 29a (TC) | 10V | 125mohm @ 14.5a, 10V | 3,5 V @ 250 ähm | 95 NC @ 10 V | ± 20 V | 2990 PF @ 380 V | - - - | 278W (TC) | |||||||||||||||||||||||||||||
![]() | KST13MTF | 0,0300 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KST13 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 30 v | 300 ma | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | |||||||||||||||||||||||||||||
![]() | HUFA76409T3ST | 0,5200 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUFA76409 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.500 | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | FDS7064n | 1.2700 | ![]() | 65 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 16a (ta) | 4,5 v | 7,5 MOHM @ 16A, 4,5 V. | 2v @ 250 ähm | 48 NC @ 4,5 V. | ± 12 V | 3355 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||||||||||||||||
![]() | FGB40N6S2T | 3.4400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | 290 w | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | 390 V, 20A, 3OHM, 15 V. | - - - | 600 V | 75 a | 180 a | 2,7 V @ 15V, 20a | 115 µj (Ein), 195 um (AUS) | 35 NC | 8ns/35ns | |||||||||||||||||||||||||||||
![]() | FDP8860 | 1.2600 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 238 | N-Kanal | 30 v | 80A (TC) | 4,5 V, 10 V. | 2,5 MOHM @ 80A, 10V | 2,5 V @ 250 ähm | 222 NC @ 10 V | ± 20 V | 12240 PF @ 15 V | - - - | 254W (TC) | |||||||||||||||||||||||||||||
![]() | RF1K4915696 | 0,8200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 365 | N-Kanal | 30 v | 6.3a (ta) | 5v | 30mohm @ 6.3a, 5v | 2v @ 250 ähm | 65 NC @ 10 V | ± 10 V | 2030 PF @ 25 V. | - - - | 2W (TA) | ||||||||||||||||||||||||||
![]() | NDS8858H | 0,5300 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS885 | MOSFET (Metalloxid) | 1W | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N und p-kanal | 30V | 6,3a, 4,8a | 35mohm @ 4,8a, 10V | 2,8 V @ 250 ähm | 30nc @ 10v | 720PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||||
![]() | HUFA76413DK8 | 0,3100 | ![]() | 5694 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | HUFA76413 | MOSFET (Metalloxid) | 2,5 W (TA) | 8-soic | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 291 | 2 n-kanal (dual) | 60 v | 5.1a (TC) | 49mohm @ 5.1a, 10V | 3v @ 250 ähm | 23nc @ 10v | 620PF @ 25V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | RF1K4909096 | 0,6200 | ![]() | 60 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | RF1K4 | MOSFET (Metalloxid) | 2W (TA) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 12V | 3,5a (TA) | 50 MOHM @ 3,5A, 5V | 2v @ 250 ähm | 25nc @ 10v | 750pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | Si9926dy | 0,2200 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI9926 | MOSFET (Metalloxid) | 900 MW (TA) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | 2 n-kanal (dual) | 20V | 6,5a (ta) | 30mohm @ 6,5a, 4,5 V. | 1,5 V @ 250 ähm | 10nc @ 4,5 V | 700PF @ 10V | - - - | |||||||||||||||||||||||||||
![]() | 2N4403TF | 0,0400 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.991 | 40 v | 600 mA | - - - | PNP | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 2V | 200 MHz | |||||||||||||||||||||||||||||||||
![]() | FDMS3616S | 0,8300 | ![]() | 65 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | Oberflächenhalterung | 8-Powertdfn | FDMS3616 | MOSFET (Metalloxid) | 1W | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Dual) Asymmetrisch | 25 v | 16a, 18a | 6,6 MOHM @ 16A, 10V | 2,5 V @ 250 ähm | 27nc @ 10v | 1765PF @ 13V | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | FDC6432SH | 0,4400 | ![]() | 45 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC6432 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N und p-kanal | 30 V, 12 V | 2,4a, 2,5a | 90 MOHM @ 2,4a, 10 V | 3V @ 1ma | 3,5nc @ 5v | 270pf @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||||
![]() | FDS4935 | 1.0000 | ![]() | 6688 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS49 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 p-kanal (dual) | 30V | 7a | 23mohm @ 7a, 10V | 3v @ 250 ähm | 21nc @ 5v | 1233pf @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||||
![]() | IRF654B | 0,9600 | ![]() | 447 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-IRF654B-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | KSR1101MTF | 0,0700 | ![]() | 31 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KSR1101 | 200 MW | SOT-23 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 20 @ 10ma, 5V | 250 MHz | 4.7 Kohms | 4.7 Kohms | ||||||||||||||||||||||||||||
![]() | KSB1116GTA | 0,0400 | ![]() | 2375 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,855 | 50 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 200 @ 100 Ma, 2V | 120 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus