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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | DATENBLATT | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | HUFA76429D3ST_QF085 | - - - | ![]() | 5621 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUFA76429 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 300 | - - - | ||||||||||||||||||||||||||||||||
![]() | KSC838CYTA | 0,0200 | ![]() | 1968 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,252 | 30 v | 30 ma | 100NA (ICBO) | Npn | 400mv @ 1ma, 10 mA | 120 @ 2MA, 12V | 250 MHz | |||||||||||||||||||||||||
![]() | Fga15n120antdtu | - - - | ![]() | 5007 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA15N120 | Standard | 186 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | 600 V, 15a, 10ohm, 15 V. | 330 ns | Npt und griffen | 1200 V | 30 a | 45 a | 2,4 V @ 15V, 15a | 3MJ (EIN), 600 µJ (AUS) | 120 NC | 15ns/160ns | ||||||||||||||||||||
![]() | FDD6512a | 0,4100 | ![]() | 516 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 10.7a (TA), 36a (TC) | 2,5 V, 4,5 V. | 21mohm @ 10.7a, 4,5 V. | 1,5 V @ 250 ähm | 19 NC @ 4,5 V. | ± 12 V | 1082 PF @ 10 V | - - - | 3,8 W (TA), 43W (TC) | |||||||||||||||||||||
![]() | FDS5670 | 1.0000 | ![]() | 5582 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 60 v | 10a (ta) | 6 V, 10V | 14mohm @ 10a, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 2900 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||
![]() | KST4401MTF | - - - | ![]() | 6828 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 7.639 | 40 v | 600 mA | 100na | Npn | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 1V | 250 MHz | |||||||||||||||||||||||
![]() | FDPF680N10T | 0,6200 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 481 | N-Kanal | 100 v | 12a (TC) | 10V | 68mohm @ 6a, 10V | 4,5 V @ 250 ähm | 17 NC @ 10 V | ± 20 V | 1000 PF @ 50 V | - - - | 24W (TC) | ||||||||||||||||||||||
![]() | FDZ193p | 0,2200 | ![]() | 779 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-UFBGA, WLCSP | MOSFET (Metalloxid) | 6-WLCSP (1x1.5) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 20 v | 3a (ta) | 1,7 V, 4,5 V. | 90 MOHM @ 1A, 4,5 V. | 1,5 V @ 250 ähm | 10 nc @ 10 v | ± 12 V | 660 PF @ 10 V. | - - - | 1,9W (TA) | ||||||||||||||||||||||
![]() | FDC8886 | 0,2000 | ![]() | 184 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | Ear99 | 8542.39.0001 | 1.500 | N-Kanal | 30 v | 6,5a (TA), 8a (TC) | 4,5 V, 10 V. | 23mohm @ 6.5a, 10V | 3v @ 250 ähm | 7.4 NC @ 10 V | ± 20 V | 465 PF @ 15 V | - - - | 1.6W (TA) | ||||||||||||||||||||||
FDB024N04AL7 | 2.8700 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-7, d²pak (6 Leads + Tab) | MOSFET (Metalloxid) | To-263-7 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 100a (TC) | 10V | 2,4mohm @ 80a, 10V | 3v @ 250 ähm | 109 NC @ 10 V | ± 20 V | 7300 PF @ 25 V. | - - - | 214W (TC) | |||||||||||||||||||||||
![]() | KSP2907ABU | 0,0400 | ![]() | 638 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 7.493 | 60 v | 600 mA | 10NA (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | ||||||||||||||||||||||||||
![]() | HUF76129S3ST | - - - | ![]() | 9570 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 641 | N-Kanal | 30 v | 56a (TC) | 4,5 V, 10 V. | 16ohm @ 56a, 10V | 3v @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1350 PF @ 25 V. | - - - | 105W (TC) | |||||||||||||||||||
![]() | Fqu6n40ctu | - - - | ![]() | 6824 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 400 V | 4,5a (TC) | 10V | 1OHM @ 2,25a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 625 PF @ 25 V. | - - - | 2,5 W (TA), 48W (TC) | |||||||||||||||||||||
![]() | NJVMJB44H11T4G | 0,6700 | ![]() | 81 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | 2 w | D²pak | Herunterladen | Ear99 | 8541.29.0075 | 484 | 80 v | 10 a | 10 µA | Npn | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 50 MHz | ||||||||||||||||||||||||||
![]() | HGT1S14N36G3VLT_NL | - - - | ![]() | 5266 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Logik | 100 w | I2pak (to-262) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 124 | 300 V, 7a, 28ohm, 5 V. | - - - | 390 v | 18 a | 2,2 V @ 5v, 14a | - - - | 24 NC | -/7µs | |||||||||||||||||||||
![]() | 2N3903 | 0,0200 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 40 v | 200 ma | - - - | Npn | 300mv @ 5ma, 50 mA | 50 @ 10 ma, 1V | - - - | |||||||||||||||||||||||||
![]() | FGA6065ADF | - - - | ![]() | 6417 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 306 w | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 60A, 6OHM, 15 V. | 110 ns | TRABENFELD STOPP | 650 V | 120 a | 180 a | 2,3 V @ 15V, 60a | 2,46MJ (EIN), 520 µJ (AUS) | 84 NC | 25,6ns/71ns | ||||||||||||||||||||||
![]() | FDA8440 | 3.9800 | ![]() | 7543 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 30a (TA), 100A (TC) | 4,5 V, 10 V. | 2,1 MOHM @ 80A, 10V | 3v @ 250 ähm | 450 NC @ 10 V | ± 20 V | 24740 PF @ 25 V. | - - - | 306W (TC) | ||||||||||||||||||||||
![]() | HUF75329S3 | 0,3300 | ![]() | 1516 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 49a (TC) | 10V | 24MOHM @ 49A, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | |||||||||||||||||||||
![]() | FDMC7680 | 0,6100 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 492 | N-Kanal | 30 v | 14,8a (ta) | 4,5 V, 10 V. | 7.2mohm @ 14.8a, 10V | 3v @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 2855 PF @ 15 V | - - - | 2,3 W (TA), 31W (TC) | ||||||||||||||||||||||
![]() | FQB45N15V2TM | - - - | ![]() | 6616 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 166 | N-Kanal | 150 v | 45a (TC) | 10V | 40mohm @ 22.5a, 10V | 4v @ 250 ähm | 94 NC @ 10 V | ± 30 v | 3030 PF @ 25 V. | - - - | - - - | |||||||||||||||||||||
![]() | MMBF170 | - - - | ![]() | 4869 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 500 mA (TA) | 10V | 5ohm @ 200 mA, 10V | 3V @ 1ma | ± 20 V | 40 PF @ 10 V | - - - | 300 MW (TA) | |||||||||||||||||||||||
![]() | BC548C | 0,0400 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 5.000 | 30 v | 100 ma | 15na | Npn | 250 mV @ 500 µA, 10 mA | 420 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||
![]() | BC307BTA | - - - | ![]() | 7521 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 180 @ 2MA, 5V | 130 MHz | |||||||||||||||||||||||||
![]() | TIP31ATU | 0,2400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 60 v | 3 a | 300 µA | Npn | 1,2 V @ 375 Ma, 3a | 10 @ 3a, 4V | 3MHz | |||||||||||||||||||||||||
![]() | FGH20N6S2 | 1.0000 | ![]() | 2465 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 125 w | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 150 | 390 V, 7a, 25 Ohm, 15 V | - - - | 600 V | 28 a | 40 a | 2,7 V @ 15V, 7a | 25 µJ (EIN), 58 µJ (AUS) | 30 NC | 7.7ns/87ns | ||||||||||||||||||||||
![]() | FQAF6N90 | 1.2500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 900 V | 4,5a (TC) | 10V | 1,9OHM @ 2,3a, 10V | 5 V @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1880 PF @ 25 V. | - - - | 96W (TC) | |||||||||||||||||||||
![]() | KSC5021Rtu | - - - | ![]() | 5843 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | KSC5021 | 50 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 500 V | 5 a | 10 µA (ICBO) | Npn | 1v @ 600 mA, 3a | 15 @ 600 mA, 5V | 18MHz | ||||||||||||||||||||||
![]() | FQD5N50TF | 0,5100 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 500 V | 3,5a (TC) | 10V | 1,8OHM @ 1,75a, 10 V. | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 610 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | |||||||||||||||||||||
![]() | Fjl4215otu | 2.4200 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | 150 w | HPM F2 | Herunterladen | Ear99 | 8542.39.0001 | 124 | 250 V | 17 a | 5 µA (ICBO) | PNP | 3v @ 800 mA, 8a | 80 @ 1a, 5V | 30 MHz |
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