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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FDME820NZT | 0,3900 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powerufdfn | MOSFET (Metalloxid) | Mikrofet 1,6x1.6 Dünn | Herunterladen | Ear99 | 8542.39.0001 | 760 | N-Kanal | 20 v | 9a (ta) | 1,8 V, 4,5 V. | 18mohm @ 9a, 4,5 V. | 1V @ 250 ähm | 8,5 NC @ 4,5 V | ± 12 V | 865 PF @ 10 V. | - - - | 2.1W (TA) | |||||||||||||||||||||||
![]() | HUFA76609D3ST | 0,4300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 10a (TC) | 4,5 V, 10 V. | 160 Mohm @ 10a, 10V | 3v @ 250 ähm | 16 NC @ 10 V | ± 16 v | 425 PF @ 25 V. | - - - | 49W (TC) | ||||||||||||||||||||||
![]() | NDS356p | 1.0000 | ![]() | 1157 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 1.1a (ta) | 4,5 V, 10 V. | 210MOHM @ 1,3a, 10V | 2,5 V @ 250 ähm | 5 NC @ 5 V. | ± 12 V | 180 PF @ 10 V. | - - - | 500 MW (TA) | ||||||||||||||||||||||
![]() | SFP9640L | 0,7200 | ![]() | 760 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | P-Kanal | 200 v | 11a (TC) | 5v | 500MOHM @ 5.5A, 5V | 2v @ 250 ähm | 59 NC @ 5 V. | ± 20 V | 1585 PF @ 25 V. | - - - | 98W (TC) | ||||||||||||||||||||||
![]() | FDP2552_NL | 1.0000 | ![]() | 2939 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 150 v | 5a (ta), 37a (TC) | 10V | 36mohm @ 16a, 10V | 4v @ 250 ähm | 51 NC @ 10 V | ± 20 V | 2800 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||
![]() | SFR9210TF | - - - | ![]() | 7818 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 200 v | 1,6a (TC) | 10V | 3OHM @ 800 mA, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 30 v | 285 PF @ 25 V. | - - - | 2,5 W (TA), 19W (TC) | ||||||||||||||||||||
![]() | FDS6986As | 0,4100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 728 | 2 n-kanal (dual) | 30V | 6,5a, 7,9a | 29mohm @ 6.5a, 10V | 3v @ 250 ähm | 17nc @ 10v | 720PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||
![]() | SFS9630 | 0,4100 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 200 v | 4.4a (TC) | 10V | 800MOHM @ 2,2A, 10 V. | 4v @ 250 ähm | 36 NC @ 10 V | ± 30 v | 965 PF @ 25 V. | - - - | 33W (TC) | ||||||||||||||||||||
![]() | BC859BMTF | 0,0200 | ![]() | 70 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC859 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | |||||||||||||||||||||||
![]() | FQP10N20CTSTU | 0,3100 | ![]() | 9282 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 797 | N-Kanal | 200 v | 9,5a (TC) | 10V | 360MOHM @ 4.75a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 72W (TC) | ||||||||||||||||||||||
![]() | FGD3040G2-F085 | 1.0000 | ![]() | 5550 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, EcoSospark® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FGD3040 | Logik | 150 w | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 300 V, 6,5a, 1kohm, 5 V. | - - - | 400 V | 41 a | 1,25 V @ 4V, 6a | - - - | 21 NC | -/4,8 µs | ||||||||||||||||||||||||
![]() | TIP30C | 0,1700 | ![]() | 4759 | 0.00000000 | Fairchild Semiconductor | TIP30C | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 100 v | 1 a | 300 µA | PNP | 700 MV @ 125 Ma, 1a | 40 @ 200 Ma, 4V | 3MHz | ||||||||||||||||||||||||
![]() | Si4416dy | - - - | ![]() | 8178 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1.353 | N-Kanal | 30 v | 9a (ta) | - - - | 18Mohm @ 9a, 10V | 1V @ 250 ähm | 20 NC @ 5 V | ± 20 V | 1340 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||
![]() | FQP5N80 | 1.0000 | ![]() | 9416 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 4.8a (TC) | 10V | 2,6OHM @ 2,4a, 10 V. | 5 V @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1250 PF @ 25 V. | - - - | 140W (TC) | ||||||||||||||||||||||
![]() | HUF76619D3ST | 1.0000 | ![]() | 7026 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 18a (TC) | 4,5 V, 10 V. | 85mohm @ 18a, 10V | 3v @ 250 ähm | 29 NC @ 10 V | ± 16 v | 767 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||||
![]() | KSB834Y | - - - | ![]() | 8849 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 1,5 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 200 | 60 v | 3 a | 100 µA (ICBO) | PNP | 1v @ 300 mA, 3a | 100 @ 500 mA, 5V | 9MHz | ||||||||||||||||||||||||||
![]() | KSD986YSTSSTU | 1.0000 | ![]() | 3733 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.880 | 80 v | 1,5 a | 10 µA (ICBO) | NPN - Darlington | 1,5 V @ 1ma, 1a | 8000 @ 1a, 2v | - - - | ||||||||||||||||||||||||||
![]() | NDS335N | 0,1800 | ![]() | 95 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 1.7a (ta) | 2,7 V, 4,5 V. | 110 MOHM @ 1,7A, 4,5 V. | 1V @ 250 ähm | 9 NC @ 4,5 V. | 8v | 240 PF @ 10 V | - - - | 500 MW (TA) | ||||||||||||||||||||||
![]() | Fdn336p | 0,1400 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 2,156 | P-Kanal | 20 v | 1,3a (ta) | 2,5 V, 4,5 V. | 200mohm @ 1,3a, 4,5 V. | 1,5 V @ 250 ähm | 5 NC @ 4,5 V. | ± 8 v | 330 PF @ 10 V. | - - - | 500 MW (TA) | |||||||||||||||||||||||
![]() | FQI47P06TU | 1.5300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 60 v | 47a (TC) | 10V | 26mohm @ 23.5a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 25 V | 3600 PF @ 25 V. | - - - | 3,75W (TA), 160 W (TC) | ||||||||||||||||||||||
![]() | KSH122TM | - - - | ![]() | 6734 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH12 | 1,75 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 699 | 100 v | 8 a | 10 µA | NPN - Darlington | 4v @ 80 Ma, 8a | 1000 @ 4a, 4V | - - - | |||||||||||||||||||||||
![]() | PN200A-FS | 0,1000 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 45 V | 500 mA | 50na | PNP | 400mv @ 20 mA, 200 mA | 300 @ 10 mA, 1V | 250 MHz | ||||||||||||||||||||||||
![]() | KSC2331YBU | 0,0500 | ![]() | 236 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 6.662 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 700 mv @ 50 mA, 500 mA | 120 @ 50 Ma, 2V | 50 MHz | ||||||||||||||||||||||||||
![]() | FDC855n | 0,2400 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | Ear99 | 8542.39.0001 | 1.265 | N-Kanal | 30 v | 6.1a (ta) | 4,5 V, 10 V. | 27mohm @ 6.1a, 10V | 3v @ 250 ähm | 13 NC @ 10 V | ± 20 V | 655 PF @ 15 V | - - - | 1.6W (TA) | |||||||||||||||||||||||
![]() | FGA30T65SHD | - - - | ![]() | 5102 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA30T65 | Standard | 238 w | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 30a, 6OHM, 15 V. | 31.8 ns | TRABENFELD STOPP | 650 V | 60 a | 90 a | 2,1 V @ 15V, 30a | 598 µj (EIN), 167 µJ (AUS) | 54.7 NC | 14,4ns/52,8ns | ||||||||||||||||||||||
![]() | HUF76121S3S | 0,7000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 47a (TC) | 4,5 V, 10 V. | 21mohm @ 47a, 10V | 3v @ 250 ähm | 30 NC @ 10 V | ± 20 V | 850 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||
![]() | FQPF12N60 | 2.8800 | ![]() | 55 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 5.8a (TC) | 10V | 700 MOHM @ 2,9a, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 55W (TC) | ||||||||||||||||||||||
![]() | BC858AMTF | 0,0600 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||
![]() | 2N4400ta | 0,0200 | ![]() | 7295 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 10.000 | 40 v | 600 mA | - - - | Npn | 750 MV @ 50 Ma, 500 mA | 50 @ 150 mA, 1V | - - - | ||||||||||||||||||||||||||
![]() | HUFA76407DK8T | 1.0000 | ![]() | 3298 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | HUFA76407 | MOSFET (Metalloxid) | 2.5W | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 60 v | - - - | 90 MOHM @ 3,8a, 10V | 3v @ 250 ähm | 11.2nc @ 10v | 330pf @ 25v | Logikpegel -tor |
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