Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | Feuchtigitesempfindlich (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FDMC7672 | 0,4200 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 715 | N-Kanal | 30 v | 16,9a (TA), 20A (TC) | 4,5 V, 10 V. | 5.7mohm @ 16.9a, 10V | 3v @ 250 ähm | 57 NC @ 10 V | ± 20 V | 3890 PF @ 15 V | - - - | 2,3 W (TA), 33W (TC) | |||||||||||||||||||||||||||||||
![]() | FGP3440G2 | - - - | ![]() | 8360 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | But11TU | 0,4000 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 5 a | 1ma | Npn | 1,5 V @ 600 Ma, 3a | - - - | - - - | ||||||||||||||||||||||||||||||||
![]() | MPSA06 | 0,0800 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MPSA06 | 625 MW | To-92 | Herunterladen | Ear99 | 8541.21.0075 | 3.842 | 80 v | 500 mA | 100NA (ICBO) | Npn | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||||
![]() | SFU9034TU | 0,2600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 14a (TC) | 10V | 140 MOHM @ 7A, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 25 V | 1155 PF @ 25 V. | - - - | 2,5 W (TA), 49W (TC) | ||||||||||||||||||||||||||||
![]() | PN4250 | 0,0500 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 40 v | 500 mA | 10NA (ICBO) | PNP | 250 mV @ 500 µA, 10 mA | 250 @ 100 µA, 5V | - - - | ||||||||||||||||||||||||||||||||||
![]() | BCV71 | 0,0300 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.21.0075 | 8.663 | 60 v | 500 mA | 100NA (ICBO) | Npn | 250 mV @ 500 µA, 10 mA | 110 @ 2MA, 5V | - - - | |||||||||||||||||||||||||||||||||||
![]() | FMM6G30US60 | 28.1700 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | Modul | 104 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-FMM6G30US60 | Ear99 | 8541.29.0095 | 1 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 30 a | 2,7 V @ 15V, 30a | 250 µA | Ja | 2.1 NF @ 30 V | ||||||||||||||||||||||||||||||
![]() | Fqu2n60ctu | - - - | ![]() | 5779 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 1,9a (TC) | 10V | 4.7ohm @ 950 mA, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 30 v | 235 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | |||||||||||||||||||||||||||||||
![]() | MMBT4403 | - - - | ![]() | 9368 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT4403 | 250 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 40 v | 600 mA | 100na | PNP | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 2V | 200 MHz | |||||||||||||||||||||||||||||||
![]() | HGT1S7N60C3D | 0,9800 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Standard | 60 w | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | - - - | 25 ns | - - - | 600 V | 14 a | 56 a | 2v @ 15V, 7a | - - - | 38 NC | - - - | ||||||||||||||||||||||||||||
![]() | BSR14 | 1.0000 | ![]() | 1929 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 800 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | |||||||||||||||||||||||||||||||||||
![]() | Fqpf6n50 | 0,5900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 3.6a (TC) | 10V | 1,3OHM @ 1,8a, 10 V. | 5 V @ 250 ähm | 22 NC @ 10 V. | ± 30 v | 790 PF @ 25 V. | - - - | 42W (TC) | ||||||||||||||||||||||||||||||
![]() | KSC1008OBU | - - - | ![]() | 2345 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 70 @ 50 Ma, 2V | 50 MHz | ||||||||||||||||||||||||||||||||
![]() | FCH20N60 | 2.6500 | ![]() | 838 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 600 V | 20A (TC) | 10V | 190mohm @ 10a, 10V | 5 V @ 250 ähm | 98 NC @ 10 V. | ± 30 v | 3080 PF @ 25 V. | - - - | 208W (TC) | ||||||||||||||||||||||||||||||
![]() | FDPF7N50F | 0,7100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 6a (TC) | 10V | 1,15OHM @ 3a, 10V | 5 V @ 250 ähm | 20 nc @ 10 v | ± 30 v | 960 PF @ 25 V. | - - - | 38,5W (TC) | ||||||||||||||||||||||||||||||
![]() | FDMS86320 | 0,7200 | ![]() | 4089 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 69 | N-Kanal | 80 v | 10.5a (TA), 22A (TC) | 8 V, 10V | 11.7mohm @ 10.5a, 10V | 4,5 V @ 250 ähm | 41 nc @ 10 v | ± 20 V | 2640 PF @ 40 V | - - - | 2,5 W (TA), 69W (TC) | ||||||||||||||||||||||||||||
![]() | KST06MTF-FS | - - - | ![]() | 4273 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||
![]() | FDS6692A | 0,5200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 582 | N-Kanal | 30 v | 9a (ta) | 4,5 V, 10 V. | 11,5 MOHM @ 9A, 10V | 2,5 V @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1610 PF @ 15 V | - - - | 1.47W (TA) | |||||||||||||||||||||||||||||||
![]() | BD17610stu | 0,2000 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | BD176 | 30 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 45 V | 3 a | 100 µA (ICBO) | PNP | 800mv @ 100 mA, 1a | 63 @ 150 mA, 2V | 3MHz | |||||||||||||||||||||||||||||||
![]() | FDPF12N50NZ | 0,9800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | UNIFET-II ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 306 | N-Kanal | 500 V | 11,5a (TC) | 10V | 520MOHM @ 5.75A, 10V | 5 V @ 250 ähm | 30 NC @ 10 V | ± 25 V | 1235 PF @ 25 V. | - - - | 42W (TC) | |||||||||||||||||||||||||||||||
![]() | FDS5692Z | 1.0700 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 50 v | 5.8a (ta) | 4,5 V, 10 V. | 24MOHM @ 5.8a, 10V | 3v @ 250 ähm | 25 NC @ 10 V | ± 20 V | 1025 PF @ 25 V. | - - - | 2,5 W (TA) | ||||||||||||||||||||||||||||||
![]() | Fqu8n25tu | 0,6400 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 250 V | 6.2a (TC) | 10V | 550MOHM @ 3.1a, 10 V. | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 530 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | ||||||||||||||||||||||||||||||
![]() | FJX4008RTF | 0,0500 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-70, SOT-323 | FJX400 | 200 MW | SC-70-3 (SOT323) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 200 MHz | 47 Kohms | 22 Kohms | ||||||||||||||||||||||||||||||||
![]() | BC307BBU | - - - | ![]() | 6045 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 180 @ 2MA, 5V | 130 MHz | ||||||||||||||||||||||||||||||||||
![]() | 2SC3651-TD-e | 0,1800 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 2SC3651 | PCP | Herunterladen | Ear99 | 8541.21.0075 | 1 | 100NA (ICBO) | Npn | 500 mV @ 2MA, 100 mA | 500 @ 10ma, 5V | 150 MHz | |||||||||||||||||||||||||||||||||||||
![]() | TIP106 | 0,2700 | ![]() | 8150 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 80 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 890 | 80 v | 8 a | 50 µA | PNP - Darlington | 2,5 V @ 80 Ma, 8a | 1000 @ 3a, 4V | 4MHz | ||||||||||||||||||||||||||||||||||
![]() | KSE45H8TU | 0,2500 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | KSE45 | 1,67 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 60 v | 10 a | 10 µA | PNP | 1v @ 400 mA, 8a | 60 @ 2a, 1V | 40 MHz | |||||||||||||||||||||||||||||||
![]() | KSC1674COBU | 0,0200 | ![]() | 8988 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 12.645 | - - - | 20V | 20 ma | Npn | 70 @ 1ma, 6v | 600 MHz | 3db ~ 5 dB @ 100MHz | ||||||||||||||||||||||||||||||||||
![]() | MMBTH10-FS | - - - | ![]() | 3518 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 225 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | - - - | 25 v | - - - | Npn | 60 @ 4ma, 10V | 650 MHz | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus