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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | DATENBLATT | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FJA4313Rtu | 1.0000 | ![]() | 2549 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | 130 w | To-3pn | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 250 V | 17 a | 5 µA (ICBO) | Npn | 3v @ 800 mA, 8a | 55 @ 1a, 5v | 30 MHz | |||||||||||||||||||||||||||
![]() | KSB811YTA | 0,0200 | ![]() | 4868 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Kurzkörper | 350 MW | To-92s | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.978 | 25 v | 1 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 120 @ 100 mA, 1V | 110 MHz | |||||||||||||||||||||||||||||
![]() | Fqd1n60tm | 0,3100 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 1a (TC) | 10V | 11,5 OHM @ 500 mA, 10V | 5 V @ 250 ähm | 6 nc @ 10 v | ± 30 v | 150 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | |||||||||||||||||||||||||
![]() | FDP10AN06A0 | 1.3100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 12a (TA), 75A (TC) | 6 V, 10V | 10,5 MOHM @ 75A, 10V | 4v @ 250 ähm | 37 NC @ 10 V. | ± 20 V | 1840 PF @ 25 V. | - - - | 135W (TC) | |||||||||||||||||||||||||
![]() | HUF75542p3 | 1.7400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 173 | N-Kanal | 80 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 180 NC @ 20 V. | ± 20 V | 2750 PF @ 25 V. | - - - | 230W (TC) | ||||||||||||||||||||||||||
![]() | KSB1151YSTSTU | 0,2900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | KSB11 | 1,3 w | To-126-3 | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | 60 v | 5 a | 10 µA (ICBO) | PNP | 300mv @ 200 Ma, 2a | 160 @ 2a, 1V | - - - | ||||||||||||||||||||||||||
![]() | FQI17P10TU | 0,5500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 16,5a (TC) | 10V | 190MOHM @ 8.25A, 10V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 30 v | 1100 PF @ 25 V. | - - - | 3,75 W (TA), 100 W (TC) | |||||||||||||||||||||||
![]() | FDD8874 | 0,6600 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 18a (TA), 116a (TC) | 4,5 V, 10 V. | 5.1MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 72 NC @ 10 V | ± 20 V | 2990 PF @ 15 V | - - - | 110W (TC) | ||||||||||||||||||||||||||
![]() | Si4936dy | 0,9700 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4936 | MOSFET (Metalloxid) | 900 MW (TA) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 30V | 5.8a (ta) | 37mohm @ 5.8a, 10V | 1V @ 250 ähm | 25nc @ 10v | 460PF @ 15V | - - - | ||||||||||||||||||||||||
![]() | IRF620B | - - - | ![]() | 1948 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 5a (TC) | 10V | 800 MOHM @ 2,5A, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 30 v | 390 PF @ 25 V. | - - - | 47W (TC) | |||||||||||||||||||||||
![]() | FQAF11N90 | - - - | ![]() | 5826 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 900 V | 7.2a (TC) | 10V | 960 MOHM @ 3,6a, 10V | 5 V @ 250 ähm | 94 NC @ 10 V | ± 30 v | 3500 PF @ 25 V. | - - - | 120W (TC) | |||||||||||||||||||||||||
![]() | FDMS9408-F085 | - - - | ![]() | 9562 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS94 | MOSFET (Metalloxid) | Power56 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 40 v | 80A (TC) | 10V | 1,8 MOHM @ 80A, 10V | 4v @ 250 ähm | 92 NC @ 10 V | ± 20 V | 5120 PF @ 25 V. | - - - | 214W (TJ) | ||||||||||||||||||||||
![]() | FDP2614 | - - - | ![]() | 2460 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDP2614 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 62a (TC) | 10V | 27mohm @ 31a, 10V | 5 V @ 250 ähm | 99 NC @ 10 V | ± 30 v | 7230 PF @ 25 V. | - - - | 260W (TC) | |||||||||||||||||||||||
![]() | FDSS2407S_B82086 | 0,7000 | ![]() | 783 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDSS24 | MOSFET (Metalloxid) | 2.27W (TA) | 8-soic | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 62V | 3.3a (ta) | 110 Mohm @ 3,3a, 10 V | 3v @ 250 ähm | 4.3nc @ 5v | 300PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||
![]() | Fqu1n60TU | 0,5500 | ![]() | 607 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 607 | N-Kanal | 600 V | 1a (TC) | 10V | 11,5 OHM @ 500 mA, 10V | 5 V @ 250 ähm | 6 nc @ 10 v | ± 30 v | 150 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | |||||||||||||||||||||||||
![]() | FJPF13009H1TU | 0,8900 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | 50 w | To-220F-3 (Y-Forming) | Herunterladen | Ear99 | 8542.39.0001 | 337 | 400 V | 12 a | - - - | Npn | 3v @ 3a, 12a | 6 @ 8a, 5V | 4MHz | ||||||||||||||||||||||||||||||
![]() | PN2222ATA | 1.0000 | ![]() | 6789 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | 0000.00.0000 | 1 | 40 v | 1 a | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | |||||||||||||||||||||||||||||||
![]() | KSD526Ytu | 1.0000 | ![]() | 7595 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | 0000.00.0000 | 1 | 80 v | 4 a | 30 µA (ICBO) | Npn | 1,5 V @ 300 Ma, 3a | 120 @ 500 mA, 5V | 8MHz | |||||||||||||||||||||||||||||||
![]() | Fjy3004r | 0,0300 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-89, SOT-490 | Fjy300 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 250 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||||||||||
![]() | NDS9952a | - - - | ![]() | 3220 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS995 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N und p-kanal | 30V | 3,7a, 2,9a | 80Mohm @ 1a, 10V | 2,8 V @ 250 ähm | 25nc @ 10v | 320pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | RFD4N06LSM9A | 0,5600 | ![]() | 67 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 4a (TC) | 5v | 600MOHM @ 1A, 5V | 2,5 V @ 250 ähm | 8 NC @ 10 V | ± 10 V | - - - | 30W (TC) | ||||||||||||||||||||||||||
![]() | FDP2670 | 1.5900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 200 v | 19a (ta) | 10V | 130mohm @ 10a, 10V | 4,5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1320 PF @ 100 V | - - - | 93W (TC) | |||||||||||||||||||||||||
![]() | FMBA14 | 0,1900 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | Fmba1 | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8541.21.0095 | 1.750 | 30V | 1.2a | 100NA (ICBO) | 2 NPN (Dual) | 1,5 V @ 100 µA, 100 mA | 20000 @ 100ma, 5V | 1,25 MHz | |||||||||||||||||||||||||||||
![]() | ZTX614 | - - - | ![]() | 3011 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 378 | 100 v | 800 mA | 100NA (ICBO) | NPN - Darlington | 1,25 V @ 8ma, 800 mA | 10000 @ 500 mA, 5V | - - - | |||||||||||||||||||||||||||||
![]() | FDBL0150N60 | 4.4900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDBL0150N60 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 240a (TC) | 10V | 1,5 MOHM @ 80A, 10V | 4v @ 250 ähm | 169 NC @ 10 V | ± 20 V | 10300 PF @ 30 V | - - - | 357W (TJ) | |||||||||||||||||||||||
![]() | BD239ATU | - - - | ![]() | 4709 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 60 v | 2 a | 300 µA | Npn | 700mv @ 200 Ma, 1a | 15 @ 1a, 4V | - - - | ||||||||||||||||||||||||||||||
![]() | FDY4001CZ | 0,1000 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | FDY40 | MOSFET (Metalloxid) | 446 MW | SOT-563F | Herunterladen | Nicht Anwendbar | Ear99 | 8541.21.0095 | 3.000 | N und p-kanal | 20V | 200 mA, 150 mA | 5OHM @ 200 Ma, 4,5 V. | 1,5 V @ 250 ähm | 1,1NC @ 4,5V | 60pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | Fga40n60ufdtu | 2.1700 | ![]() | 142 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 160 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 142 | 300 V, 20a, 10ohm, 15 V. | 95 ns | - - - | 600 V | 40 a | 160 a | 3v @ 15V, 20a | 470 µJ (EIN), 130 µJ (AUS) | 77 NC | 15ns/65ns | |||||||||||||||||||||||||
![]() | KSC900GTA | 0,0200 | ![]() | 9320 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 12.000 | 25 v | 50 ma | 50na (ICBO) | Npn | 200mv @ 2ma, 20 mA | 200 @ 500 ähm, 3v | 100 MHz | |||||||||||||||||||||||||||||
![]() | 2N5550TFR | 0,0400 | ![]() | 76 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.416 | 140 v | 600 mA | 100NA (ICBO) | Npn | 250mv @ 5 mA, 50 mA | 60 @ 10ma, 5V | 300 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus