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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | Hp4410dyt | 0,5900 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 10a (ta) | 4,5 V, 10 V. | 135mohm @ 10a, 10V | 1V @ 250 ähm | 60 nc @ 10 v | ± 16 v | 1600 PF @ 25 V. | - - - | 2,5 W (TA) | ||||||||||||||||||
![]() | KSC1674CYTA | 0,0200 | ![]() | 322 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | - - - | 20V | 20 ma | Npn | 120 @ 1ma, 6v | 600 MHz | 3db ~ 5 dB @ 100MHz | ||||||||||||||||||||||||
![]() | FMG2G300LS60E | - - - | ![]() | 7762 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr ha | Fmg2 | 892 w | Standard | 19 Uhr ha | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3 | Halbbrücke | - - - | 600 V | 300 a | 1,8 V @ 15V, 300A | 250 µA | NEIN | ||||||||||||||||||||
![]() | Fjv3111rmtf | - - - | ![]() | 4062 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV311 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 250 MHz | 22 Kohms | |||||||||||||||||||||||
![]() | HUFA76504DK8T | 0,4300 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | HUFA76504 | MOSFET (Metalloxid) | 2.5W | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 80V | - - - | 200mohm @ 2,5a, 10V | 3v @ 250 ähm | 10nc @ 10v | 270pf @ 25v | Logikpegel -tor | |||||||||||||||||||||
![]() | FQP32N20C | - - - | ![]() | 2537 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 200 v | 28a (TC) | 10V | 82mohm @ 14a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 30 v | 2200 PF @ 25 V. | - - - | 156W (TC) | |||||||||||||||||||||
![]() | FDPF7N50F | 0,7100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 6a (TC) | 10V | 1,15OHM @ 3a, 10V | 5 V @ 250 ähm | 20 nc @ 10 v | ± 30 v | 960 PF @ 25 V. | - - - | 38,5W (TC) | ||||||||||||||||||||
![]() | FJV992PMTF | - - - | ![]() | 5408 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 120 v | 50 ma | - - - | PNP | 300 mV @ 1ma, 10 mA | 200 @ 1ma, 6v | 50 MHz | ||||||||||||||||||||||
![]() | FDD6796a | 0,5200 | ![]() | 749 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 750 | N-Kanal | 25 v | 20A (TA), 40A (TC) | 5.7mohm @ 20a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1780 PF @ 13 V | - - - | 3,7W (TA), 42W (TC) | |||||||||||||||||||
![]() | RFD16N05SM_NL | - - - | ![]() | 2706 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 387 | N-Kanal | 50 v | 16a (TC) | 10V | 47mohm @ 16a, 10V | 4v @ 250 ähm | 80 nc @ 20 V | ± 20 V | 900 PF @ 25 V. | - - - | 72W (TC) | ||||||||||||||||||
![]() | TIP30C | 0,1700 | ![]() | 4759 | 0.00000000 | Fairchild Semiconductor | TIP30C | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 100 v | 1 a | 300 µA | PNP | 700 MV @ 125 Ma, 1a | 40 @ 200 Ma, 4V | 3MHz | ||||||||||||||||||||||
![]() | 5HP01M-TL-E-FS | 0,1000 | ![]() | 45 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | ||||||||||||||||||||||||||||||||||
![]() | SFP9614 | 0,3000 | ![]() | 2635 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 726 | P-Kanal | 250 V | 1,6a (TC) | 10V | 4OHM @ 800 mA, 10V | 4v @ 250 ähm | ± 30 v | 295 PF @ 25 V. | - - - | 20W (TC) | |||||||||||||||||||
![]() | FDMC7672 | 0,4200 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 715 | N-Kanal | 30 v | 16,9a (TA), 20A (TC) | 4,5 V, 10 V. | 5.7mohm @ 16.9a, 10V | 3v @ 250 ähm | 57 NC @ 10 V | ± 20 V | 3890 PF @ 15 V | - - - | 2,3 W (TA), 33W (TC) | |||||||||||||||||||||
![]() | BC846a | 0,0700 | ![]() | 96 | 0.00000000 | Fairchild Semiconductor | SOT-23 | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 3.000 | 65 V | 100 ma | 100NA (ICBO) | Npn | 500 mV @ 5ma, 100 mA | 110 @ 2MA, 5V | 100 MHz | ||||||||||||||||||||||
![]() | RFD14N05SM9A_NL | - - - | ![]() | 5637 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 14a (TC) | 10V | 100mohm @ 14a, 10V | 4v @ 250 ähm | 40 NC @ 20 V | ± 20 V | 570 PF @ 25 V. | - - - | 48W (TC) | ||||||||||||||||||
![]() | BC557ABU | - - - | ![]() | 6850 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||
![]() | QSE114_0219 | - - - | ![]() | 7222 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 1 | ||||||||||||||||||||||||||||||||||||
![]() | FQP44N10 | - - - | ![]() | 6890 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 43,5a (TC) | 10V | 39mohm @ 21.75a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 25 V | 1800 PF @ 25 V. | - - - | 146W (TC) | |||||||||||||||||||||
![]() | FDB8443 | - - - | ![]() | 8573 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 25a (TA), 120a (TC) | 10V | 3mohm @ 80a, 10V | 4v @ 250 ähm | 185 NC @ 10 V. | ± 20 V | 9310 PF @ 25 V. | - - - | 188W (TC) | |||||||||||||||||||||
![]() | FQI27N25TU-F085 | 2.0000 | ![]() | 640 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Fqi2 | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 250 V | 25,5a (TC) | 10V | 110MOHM @ 12.75A, 10V | 5 V @ 250 ähm | 65 NC @ 10 V | ± 30 v | 1800 PF @ 25 V. | - - - | 3.13W (TA), 417W (TC) | |||||||||||||||||
![]() | FQAF44N10 | 1.0400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 100 v | 33a (TC) | 10V | 39mohm @ 16.5a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 25 V | 1800 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||
![]() | HUFA75332S3S | 1.0000 | ![]() | 8831 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 55 v | 60a (TC) | 10V | 19Mohm @ 60a, 10V | 4v @ 250 ähm | 85 NC @ 20 V | ± 20 V | 1300 PF @ 25 V. | - - - | 145W (TC) | ||||||||||||||||||||
![]() | FDS8878 | 0,2200 | ![]() | 586 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1,505 | N-Kanal | 30 v | 10.2a (ta) | 4,5 V, 10 V. | 14mohm @ 10.2a, 10V | 2,5 V @ 250 ähm | 26 NC @ 10 V | ± 20 V | 897 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||
![]() | FDMS2572 | - - - | ![]() | 8742 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-mlp (5x6), Power56 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 4,5a (TA), 27a (TC) | 6 V, 10V | 47mohm @ 4,5a, 10V | 4v @ 250 ähm | 43 NC @ 10 V | ± 20 V | 2610 PF @ 75 V | - - - | 2,5 W (TA), 78 W (TC) | |||||||||||||||||||||
![]() | TIP110 | 1.0000 | ![]() | 9843 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 60 v | 2ma | NPN - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | 25 MHz | |||||||||||||||||||||||||||
![]() | FDMS2508SDC | 1.4300 | ![]() | 31 | 0.00000000 | Fairchild Semiconductor | Dual Cool ™, Powertrench®, Syncfet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 25 v | 34a (TA), 49a (TC) | 4,5 V, 10 V. | 1,95 MOHM @ 28a, 10V | 3V @ 1ma | 69 NC @ 10 V | ± 20 V | 4515 PF @ 13 V | - - - | 3.3W (TA), 78W (TC) | ||||||||||||||||||||
![]() | FDD6512a | 0,4100 | ![]() | 516 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 10.7a (TA), 36a (TC) | 2,5 V, 4,5 V. | 21mohm @ 10.7a, 4,5 V. | 1,5 V @ 250 ähm | 19 NC @ 4,5 V. | ± 12 V | 1082 PF @ 10 V | - - - | 3,8 W (TA), 43W (TC) | ||||||||||||||||||||
![]() | NDS8936 | 0,7800 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS893 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 30V | 5.3a | 35mohm @ 5.3a, 10V | 2,8 V @ 250 ähm | 30nc @ 10v | 720PF @ 15V | Logikpegel -tor | |||||||||||||||||||||
![]() | FDG311N | 0,1900 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metalloxid) | SC-88 (SC-70-6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 20 v | 1,9a (ta) | 2,5 V, 4,5 V. | 115mohm @ 1,9a, 4,5 V. | 1,5 V @ 250 ähm | 4,5 NC @ 4,5 V. | ± 8 v | 270 PF @ 10 V. | - - - | 750 MW (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus