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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | NZT753 | 0,3900 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1,2 w | SOT-223-4 | Herunterladen | Ear99 | 8542.39.0001 | 800 | 100 v | 4 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 100 @ 500 mA, 2V | 75 MHz | |||||||||||||||||||||||||||||||||
![]() | FDMS86320 | 0,7200 | ![]() | 4089 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 69 | N-Kanal | 80 v | 10.5a (TA), 22A (TC) | 8 V, 10V | 11.7mohm @ 10.5a, 10V | 4,5 V @ 250 ähm | 41 nc @ 10 v | ± 20 V | 2640 PF @ 40 V | - - - | 2,5 W (TA), 69W (TC) | ||||||||||||||||||||||||||
![]() | HUF76132S3S | 0,9800 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 11MOHM @ 75A, 10V | 3v @ 250 ähm | 52 NC @ 10 V | ± 20 V | 1650 PF @ 25 V. | - - - | 120W (TC) | ||||||||||||||||||||||||||
![]() | Fqpf9n50ct | 0,7800 | ![]() | 604 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 9a (TC) | 10V | 800 MOHM @ 4,5A, 10 V. | 4v @ 250 ähm | 35 NC @ 10 V | ± 30 v | 1030 PF @ 25 V. | - - - | 44W (TC) | ||||||||||||||||||||||||||||
![]() | KSC815YTA | 0,0300 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 400 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 45 V | 200 ma | 100NA (ICBO) | Npn | 400mv @ 15ma, 150 mA | 120 @ 50 Ma, 1V | 200 MHz | ||||||||||||||||||||||||||||||
![]() | 2SA2205-e | - - - | ![]() | 4800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | 800 MW | Tp | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-2SA2205-E-600039 | 1 | 100 v | 2 a | 1 µA (ICBO) | PNP | 240mv @ 100 mA, 1a | 200 @ 100ma, 5V | 300 MHz | ||||||||||||||||||||||||||||||||
![]() | MPSA20 | 0,0400 | ![]() | 97 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 5.000 | 40 v | 100 ma | 100NA (ICBO) | Npn | 250 mV @ 1ma, 10 mA | 40 @ 5ma, 10V | 125 MHz | ||||||||||||||||||||||||||||||||
![]() | But11TU | 0,4000 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 5 a | 1ma | Npn | 1,5 V @ 600 Ma, 3a | - - - | - - - | ||||||||||||||||||||||||||||||
![]() | FDD8586 | 0,3300 | ![]() | 83 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 35a (TC) | 4,5 V, 10 V. | 5,5 MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 48 nc @ 10 v | ± 20 V | 2480 PF @ 10 V. | - - - | 77W (TC) | ||||||||||||||||||||||||||||
![]() | FGD2N40L | 0,2600 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Logik | 29 w | To-252, (d-pak) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 2.500 | 300 V, 2,5a, 51OHM, 4V | - - - | 400 V | 7 a | 29 a | 1,6 V @ 2,4 V, 2,5a | - - - | 11 NC | 47ns/650ns | |||||||||||||||||||||||||||||
![]() | FGH20N6S2 | 1.0000 | ![]() | 2465 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 125 w | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 150 | 390 V, 7a, 25 Ohm, 15 V | - - - | 600 V | 28 a | 40 a | 2,7 V @ 15V, 7a | 25 µJ (EIN), 58 µJ (AUS) | 30 NC | 7.7ns/87ns | |||||||||||||||||||||||||||||
![]() | 2N4410 | 1.0000 | ![]() | 4070 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 80 v | 200 ma | 10NA (ICBO) | Npn | 200 mv @ 100 ua, 1 mA | 60 @ 10 ma, 1V | - - - | ||||||||||||||||||||||||||||||||
![]() | KSD363R | 0,5300 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 40 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.200 | 120 v | 6 a | 1ma (ICBO) | Npn | 1v @ 100 mA, 1a | 40 @ 1a, 5V | 10 MHz | ||||||||||||||||||||||||||||||||
![]() | FMC7G50US60 | - - - | ![]() | 3299 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 200 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 50 a | 2,8 V @ 15V, 50a | 250 µA | NEIN | 3.46 NF @ 30 V | ||||||||||||||||||||||||||||
![]() | 73389_Q | 0,6300 | ![]() | 8832 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | 0000.00.0000 | 216 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGA70N30TDTU | 1.7600 | ![]() | 660 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 201 w | To-3pn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | 21 ns | Graben | 300 V | 160 a | 1,5 V @ 15V, 20a | - - - | 125 NC | - - - | |||||||||||||||||||||||||||||
![]() | BD438S | 0,3100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 36 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 1.037 | 45 V | 4 a | 100 µA | PNP | 600mv @ 200 Ma, 2a | 30 @ 10ma, 5v | 3MHz | |||||||||||||||||||||||||||||||||
![]() | FGD3040G2-F085 | 1.0000 | ![]() | 5550 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, EcoSospark® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FGD3040 | Logik | 150 w | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 300 V, 6,5a, 1kohm, 5 V. | - - - | 400 V | 41 a | 1,25 V @ 4V, 6a | - - - | 21 NC | -/4,8 µs | ||||||||||||||||||||||||||||||
![]() | FGPF70N30TTU | 1.2100 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 49,2 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | - - - | Graben | 300 V | 160 a | 1,5 V @ 15V, 20a | - - - | 125 NC | - - - | ||||||||||||||||||||||||||||||
![]() | D44H11TU | 1.0000 | ![]() | 1296 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | D44H | 60 w | To-220-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 80 v | 10 a | 10 µA | Npn | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 50 MHz | |||||||||||||||||||||||||||||
![]() | 2n5088bu | 1.0000 | ![]() | 5264 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 2n5088 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 30 v | 100 ma | 50na (ICBO) | Npn | 500mv @ 1ma, 10 mA | 300 @ 100 µA, 5 V | 50 MHz | |||||||||||||||||||||||||||||
![]() | Fjy3008r | - - - | ![]() | 3421 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy300 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 250 MHz | 47 Kohms | 22 Kohms | ||||||||||||||||||||||||||||||
![]() | FDD6776A | 0,3700 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 25 v | 17.7a (TA), 30a (TC) | 4,5 V, 10 V. | 7,5 Mohm @ 17.7a, 10V | 3v @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1490 PF @ 13 V. | - - - | 3.7W (TA), 39W (TC) | ||||||||||||||||||||||||||||
![]() | 30A02MH-tl-H | - - - | ![]() | 7539 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 3-smd, flaches blei | 600 MW | 3-mcph | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-30A02MH-TL-H-600039 | 1 | 30 v | 700 Ma | 100na | PNP | 220 mv @ 10ma, 200 mA | 200 @ 10ma, 2v | 520 MHz | ||||||||||||||||||||||||||||||||
![]() | FGA90N30TU | 1.1500 | ![]() | 891 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 219 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | - - - | 300 V | 90 a | 220 a | 1,4 V @ 15V, 20a | - - - | 87 NC | - - - | |||||||||||||||||||||||||||||
![]() | NJVMJD122T4G-VF01 | - - - | ![]() | 2669 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | Dpak | Herunterladen | Ear99 | 8542.39.0001 | 1 | 100 v | 8 a | 10 µA | NPN - Darlington | 4v @ 8a, 80 mA | 1000 @ 4a, 4V | - - - | |||||||||||||||||||||||||||||||||
![]() | MJD350TF | - - - | ![]() | 9699 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | Dpak-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-MJD350TF-600039 | 1 | 300 V | 500 mA | 100 µA | PNP | 1v @ 10 mA, 100 mA | 30 @ 50 Ma, 10 V | 10 MHz | ||||||||||||||||||||||||||||||||
![]() | KSB564ACGBU | 0,0700 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4,798 | 25 v | 1 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 200 @ 100ma, 1V | 110 MHz | ||||||||||||||||||||||||||||||||
![]() | Fqu6n40ctu | - - - | ![]() | 6824 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 400 V | 4,5a (TC) | 10V | 1OHM @ 2,25a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 625 PF @ 25 V. | - - - | 2,5 W (TA), 48W (TC) | ||||||||||||||||||||||||||||
![]() | MJD340TF | - - - | ![]() | 9301 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MJD34 | 1,56 w | D-Pak | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | 300 V | 500 mA | 100 µA | Npn | - - - | 30 @ 50 Ma, 10 V | - - - |
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