Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | KSH45H11TM | 0,3400 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 500 | 80 v | 8 a | 10 µA | PNP | 1v @ 400 mA, 8a | 60 @ 2a, 1V | 40 MHz | |||||||||||||||||||||||||
![]() | SSS1N60B | 0,1400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 1a (TJ) | 10V | 12ohm @ 500 mA, 10V | 4v @ 250 ähm | 7,7 NC @ 10 V | ± 30 v | 215 PF @ 25 V. | - - - | 17W (TC) | |||||||||||||||||||||
![]() | 2N7002W | 1.0000 | ![]() | 6836 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | 2N7002 | MOSFET (Metalloxid) | SC-70-3 (SOT323) | Herunterladen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 60 v | 115 Ma (TA) | 5v, 10V | 7.5OHM @ 50 Ma, 5V | 2v @ 250 ähm | ± 20 V | 50 PF @ 25 V. | - - - | 200 MW (TA) | ||||||||||||||||||||||||
![]() | FQI50N06LTU | 1.3100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 52,4a (TC) | 5v, 10V | 21mohm @ 26.2a, 10V | 2,5 V @ 250 ähm | 32 NC @ 5 V. | ± 20 V | 1630 PF @ 25 V. | - - - | 3,75W (TA), 121W (TC) | |||||||||||||||||||||||
![]() | HUF75639S3ST | 1.2800 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8541.29.0095 | 235 | N-Kanal | 100 v | 56a (TC) | 10V | 25mohm @ 56a, 10V | 4v @ 250 ähm | 130 NC @ 20 V | ± 20 V | 2000 PF @ 25 V. | - - - | 200W (TC) | ||||||||||||||||||||||||
![]() | FDC6302p | 0,2800 | ![]() | 151 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC6302 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8541.21.0095 | 1 | 2 p-kanal (dual) | 25 v | 120 Ma | 10OHM @ 200 Ma, 4,5 V. | 1,5 V @ 250 ähm | 0,31nc @ 4,5 V | 11pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||
![]() | FGB40N60SM | - - - | ![]() | 2594 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | 349 w | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 40a, 6OHM, 15 V. | Feldstopp | 600 V | 80 a | 120 a | 2,3 V @ 15V, 40a | 870 µJ (EIN), 260 µJ (AUS) | 119 NC | 12ns/92ns | |||||||||||||||||||||||||
![]() | FQB2N50TM | 1.0000 | ![]() | 3880 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 500 V | 2.1a (TC) | 10V | 5.3OHM @ 1.05a, 10V | 5 V @ 250 ähm | 8 NC @ 10 V | ± 30 v | 230 PF @ 25 V. | - - - | 3.13W (TA), 55W (TC) | |||||||||||||||||||||||
![]() | FJV4110RMTF | 0,0200 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV411 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 200 MHz | 10 Kohms | ||||||||||||||||||||||||||
![]() | FDS2070N3 | 1.9800 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 4.1a (ta) | 6 V, 10V | 78mohm @ 4.1a, 10V | 4v @ 250 ähm | 53 NC @ 10 V | ± 20 V | 1884 PF @ 75 V. | - - - | 3W (TA) | |||||||||||||||||||||||
![]() | Fcb20n60f | - - - | ![]() | 4081 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Fcb20n | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | - - - | ||||||||||||||||||||||||||||||||||
![]() | FDB8444 | 1.1400 | ![]() | 167 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 264 | N-Kanal | 40 v | 70a (TC) | 10V | 5,5 MOHM @ 70A, 10V | 4v @ 250 ähm | 128 NC @ 10 V | ± 20 V | 8035 PF @ 25 V. | - - - | 167W (TC) | ||||||||||||||||||||||||
![]() | FDBL0090N40 | 1.0000 | ![]() | 9399 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 240a (TC) | 10V | 0,9 MOHM @ 80A, 10V | 4v @ 250 ähm | 188 NC @ 10 V. | ± 20 V | 12000 PF @ 25 V. | - - - | 357W (TJ) | ||||||||||||||||||||||||
![]() | SFR2955TM | 0,1900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 60 v | 7.6a (TC) | 10V | 300 MOHM @ 3,8a, 10 V. | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 600 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | |||||||||||||||||||||
![]() | FDU2572 | 1.0000 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 150 v | 4a (ta), 29a (TC) | 6 V, 10V | 54mohm @ 9a, 10V | 4v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1770 PF @ 25 V. | - - - | 135W (TC) | |||||||||||||||||||||||
![]() | FDP5645 | - - - | ![]() | 317 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 80A (TA) | 6 V, 10V | 9,5 MOHM @ 40A, 10V | 4v @ 250 ähm | 107 NC @ 10 V | ± 20 V | 4468 PF @ 30 V | - - - | 125W (TC) | |||||||||||||||||||||||
![]() | FDS9945 | - - - | ![]() | 2555 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS99 | MOSFET (Metalloxid) | 1W (TA) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 60 v | 3,5a (TA) | 100mohm @ 3,5a, 10 V | 3v @ 250 ähm | 13nc @ 5v | 420pf @ 30v | Logikpegel -tor | |||||||||||||||||||||||||
![]() | MJE171Stu | - - - | ![]() | 3594 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,5 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 60 | 60 v | 3 a | 100NA (ICBO) | PNP | 1,7 V @ 600 Ma, 3a | 50 @ 100 mA, 1V | 50 MHz | |||||||||||||||||||||||||||
![]() | ISL9V3040D3ST-R4940 | 1.0000 | ![]() | 5008 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 5.000 | |||||||||||||||||||||||||||||||||||||||
![]() | SFU9014TU | 0,2600 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-SFU9014TU-600039 | 1 | |||||||||||||||||||||||||||||||||||||||
![]() | SFW9520TM | 0,3000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 6a (TC) | 10V | 600mohm @ 3a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 550 PF @ 25 V. | - - - | 3,8 W (TA), 49W (TC) | |||||||||||||||||||||
![]() | FQB6N70TM | 2.2500 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 700 V | 6.2a (TC) | 10V | 1,5OHM @ 3,1a, 10 V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1400 PF @ 25 V. | - - - | 3.13W (TA), 142W (TC) | |||||||||||||||||||||||
![]() | FCP11N65 | 1.4900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FCP11 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||||||||||||||||||
![]() | PN4250 | 0,0500 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 40 v | 500 mA | 10NA (ICBO) | PNP | 250 mV @ 500 µA, 10 mA | 250 @ 100 µA, 5V | - - - | |||||||||||||||||||||||||||
![]() | SFU9034TU | 0,2600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 14a (TC) | 10V | 140 MOHM @ 7A, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 25 V | 1155 PF @ 25 V. | - - - | 2,5 W (TA), 49W (TC) | |||||||||||||||||||||
![]() | TIP110 | 1.0000 | ![]() | 9843 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 60 v | 2ma | NPN - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | 25 MHz | ||||||||||||||||||||||||||||||
![]() | FGP3440G2 | - - - | ![]() | 8360 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||
![]() | BCV71 | 0,0300 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.21.0075 | 8.663 | 60 v | 500 mA | 100NA (ICBO) | Npn | 250 mV @ 500 µA, 10 mA | 110 @ 2MA, 5V | - - - | ||||||||||||||||||||||||||||
![]() | But11TU | 0,4000 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 5 a | 1ma | Npn | 1,5 V @ 600 Ma, 3a | - - - | - - - | |||||||||||||||||||||||||
![]() | MPSA06 | 0,0800 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MPSA06 | 625 MW | To-92 | Herunterladen | Ear99 | 8541.21.0075 | 3.842 | 80 v | 500 mA | 100NA (ICBO) | Npn | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 100 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus