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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) |
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![]() | KSD526Ytu | 1.0000 | ![]() | 7595 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | 0000.00.0000 | 1 | 80 v | 4 a | 30 µA (ICBO) | Npn | 1,5 V @ 300 Ma, 3a | 120 @ 500 mA, 5V | 8MHz | |||||||||||||||||||||||||||||||||
![]() | TIP110 | 1.0000 | ![]() | 9843 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 60 v | 2ma | NPN - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | 25 MHz | ||||||||||||||||||||||||||||||||||
![]() | FCP11N65 | 1.4900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FCP11 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FDS2070N3 | 1.9800 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 4.1a (ta) | 6 V, 10V | 78mohm @ 4.1a, 10V | 4v @ 250 ähm | 53 NC @ 10 V | ± 20 V | 1884 PF @ 75 V. | - - - | 3W (TA) | |||||||||||||||||||||||||||
![]() | HUF75639S3ST | 1.2800 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8541.29.0095 | 235 | N-Kanal | 100 v | 56a (TC) | 10V | 25mohm @ 56a, 10V | 4v @ 250 ähm | 130 NC @ 20 V | ± 20 V | 2000 PF @ 25 V. | - - - | 200W (TC) | ||||||||||||||||||||||||||||
![]() | FJV4110RMTF | 0,0200 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV411 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 200 MHz | 10 Kohms | ||||||||||||||||||||||||||||||
![]() | FQI50N06LTU | 1.3100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 52,4a (TC) | 5v, 10V | 21mohm @ 26.2a, 10V | 2,5 V @ 250 ähm | 32 NC @ 5 V. | ± 20 V | 1630 PF @ 25 V. | - - - | 3,75W (TA), 121W (TC) | |||||||||||||||||||||||||||
![]() | FDC6302p | 0,2800 | ![]() | 151 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC6302 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8541.21.0095 | 1 | 2 p-kanal (dual) | 25 v | 120 Ma | 10OHM @ 200 Ma, 4,5 V. | 1,5 V @ 250 ähm | 0,31nc @ 4,5 V | 11pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||
![]() | FDB8444 | 1.1400 | ![]() | 167 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 264 | N-Kanal | 40 v | 70a (TC) | 10V | 5,5 MOHM @ 70A, 10V | 4v @ 250 ähm | 128 NC @ 10 V | ± 20 V | 8035 PF @ 25 V. | - - - | 167W (TC) | ||||||||||||||||||||||||||||
![]() | Fcb20n60f | - - - | ![]() | 4081 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Fcb20n | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FDBL0090N40 | 1.0000 | ![]() | 9399 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 240a (TC) | 10V | 0,9 MOHM @ 80A, 10V | 4v @ 250 ähm | 188 NC @ 10 V. | ± 20 V | 12000 PF @ 25 V. | - - - | 357W (TJ) | ||||||||||||||||||||||||||||
![]() | FDMC7672 | 0,4200 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 715 | N-Kanal | 30 v | 16,9a (TA), 20A (TC) | 4,5 V, 10 V. | 5.7mohm @ 16.9a, 10V | 3v @ 250 ähm | 57 NC @ 10 V | ± 20 V | 3890 PF @ 15 V | - - - | 2,3 W (TA), 33W (TC) | ||||||||||||||||||||||||||||
![]() | FGP3440G2 | - - - | ![]() | 8360 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | But11TU | 0,4000 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 5 a | 1ma | Npn | 1,5 V @ 600 Ma, 3a | - - - | - - - | |||||||||||||||||||||||||||||
![]() | MPSA06 | 0,0800 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MPSA06 | 625 MW | To-92 | Herunterladen | Ear99 | 8541.21.0075 | 3.842 | 80 v | 500 mA | 100NA (ICBO) | Npn | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||
![]() | SFU9034TU | 0,2600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 14a (TC) | 10V | 140 MOHM @ 7A, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 25 V | 1155 PF @ 25 V. | - - - | 2,5 W (TA), 49W (TC) | |||||||||||||||||||||||||
![]() | PN4250 | 0,0500 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 40 v | 500 mA | 10NA (ICBO) | PNP | 250 mV @ 500 µA, 10 mA | 250 @ 100 µA, 5V | - - - | |||||||||||||||||||||||||||||||
![]() | BCV71 | 0,0300 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.21.0075 | 8.663 | 60 v | 500 mA | 100NA (ICBO) | Npn | 250 mV @ 500 µA, 10 mA | 110 @ 2MA, 5V | - - - | ||||||||||||||||||||||||||||||||
![]() | FMM6G30US60 | 28.1700 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | Modul | 104 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-FMM6G30US60 | Ear99 | 8541.29.0095 | 1 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 30 a | 2,7 V @ 15V, 30a | 250 µA | Ja | 2.1 NF @ 30 V | |||||||||||||||||||||||||||
![]() | MMBT4403 | - - - | ![]() | 9368 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT4403 | 250 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 40 v | 600 mA | 100na | PNP | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 2V | 200 MHz | ||||||||||||||||||||||||||||
![]() | HGT1S7N60C3D | 0,9800 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Standard | 60 w | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | - - - | 25 ns | - - - | 600 V | 14 a | 56 a | 2v @ 15V, 7a | - - - | 38 NC | - - - | |||||||||||||||||||||||||
![]() | BSR14 | 1.0000 | ![]() | 1929 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 800 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | ||||||||||||||||||||||||||||||||
![]() | Fqpf6n50 | 0,5900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 3.6a (TC) | 10V | 1,3OHM @ 1,8a, 10 V. | 5 V @ 250 ähm | 22 NC @ 10 V. | ± 30 v | 790 PF @ 25 V. | - - - | 42W (TC) | |||||||||||||||||||||||||||
![]() | KSC1008OBU | - - - | ![]() | 2345 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 70 @ 50 Ma, 2V | 50 MHz | |||||||||||||||||||||||||||||
![]() | FCH20N60 | 2.6500 | ![]() | 838 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 600 V | 20A (TC) | 10V | 190mohm @ 10a, 10V | 5 V @ 250 ähm | 98 NC @ 10 V. | ± 30 v | 3080 PF @ 25 V. | - - - | 208W (TC) | |||||||||||||||||||||||||||
![]() | FDPF7N50F | 0,7100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 6a (TC) | 10V | 1,15OHM @ 3a, 10V | 5 V @ 250 ähm | 20 nc @ 10 v | ± 30 v | 960 PF @ 25 V. | - - - | 38,5W (TC) | |||||||||||||||||||||||||||
![]() | FDMS86320 | 0,7200 | ![]() | 4089 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 69 | N-Kanal | 80 v | 10.5a (TA), 22A (TC) | 8 V, 10V | 11.7mohm @ 10.5a, 10V | 4,5 V @ 250 ähm | 41 nc @ 10 v | ± 20 V | 2640 PF @ 40 V | - - - | 2,5 W (TA), 69W (TC) | |||||||||||||||||||||||||
![]() | KST06MTF-FS | - - - | ![]() | 4273 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||
![]() | FDS6692A | 0,5200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 582 | N-Kanal | 30 v | 9a (ta) | 4,5 V, 10 V. | 11,5 MOHM @ 9A, 10V | 2,5 V @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1610 PF @ 15 V | - - - | 1.47W (TA) | ||||||||||||||||||||||||||||
![]() | BD17610stu | 0,2000 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | BD176 | 30 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 45 V | 3 a | 100 µA (ICBO) | PNP | 800mv @ 100 mA, 1a | 63 @ 150 mA, 2V | 3MHz |
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