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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FCP165N65S3R0 | 2.1000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Superfet® III | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Verkäfer undefiniert | 2156-FCP165N65S3R0 | Ear99 | 8541.29.0095 | 155 | N-Kanal | 650 V | 19A (TC) | 10V | 165mohm @ 9.5a, 10V | 4,5 V @ 440 mA | 39 NC @ 10 V. | ± 30 v | 1500 PF @ 400 V | - - - | 154W (TC) | ||||||||||||
![]() | FQD24N08TF | - - - | ![]() | 5283 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 798 | N-Kanal | 80 v | 19,6a (TC) | 10V | 60mohm @ 9.8a, 10V | 4v @ 250 ähm | 25 NC @ 10 V | ± 25 V | 750 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | ||||||||||||||
![]() | FDS4935BZ | - - - | ![]() | 9371 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS49 | MOSFET (Metalloxid) | 900 MW (TA) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 p-kanal (dual) | 30V | 6.9a (ta) | 22mohm @ 6.9a, 10V | 3v @ 250 ähm | 40nc @ 10v | 1360PF @ 15V | - - - | ||||||||||||||||
![]() | IRF644B-FP001 | 1.8400 | ![]() | 980 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-IRF644B-FP001-600039 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 250 V | 14a (TC) | 10V | 280mohm @ 7a, 10V | 4v @ 250 ähm | 60 nc @ 10 v | ± 30 v | 1600 PF @ 25 V. | - - - | 139W (TC) | ||||||||||||
![]() | PN3685 | 0,2400 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | K. Loch | To-226-3, bis 92-3 (to-226aa) | PN368 | MOSFET (Metalloxid) | To-92-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | - - - | - - - | - - - | - - - | - - - | ||||||||||||||||
![]() | FQT7N10LTF | - - - | ![]() | 1393 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | MOSFET (Metalloxid) | SOT-223-4 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 1.7a (TC) | 5v, 10V | 350MOHM @ 850 mA, 10V | 2v @ 250 ähm | 6 NC @ 5 V. | ± 20 V | 290 PF @ 25 V. | - - - | 2W (TC) | |||||||||||||||
![]() | ISL9N308AP3 | 0,8100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 8ohm @ 75a, 10V | 3v @ 250 ähm | 68 NC @ 10 V. | ± 20 V | 2600 PF @ 15 V | - - - | 100 W (TC) | ||||||||||||
![]() | FCPF11N65 | 1.5900 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 Full Pack | FCPF11 | MOSFET (Metalloxid) | To-220f | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | N-Kanal | 650 V | 11a (TC) | 380MOHM @ 5.5A, 10V | 5 V @ 250 ähm | 52 NC @ 10 V | 1490 PF @ 25 V. | - - - | 36W (TC) | |||||||||||||
![]() | FDZ595PZ | - - - | ![]() | 2593 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | 250 | ||||||||||||||||||||||||||||||
![]() | BS170-D26Z | 0,1000 | ![]() | 172 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | MOSFET (Metalloxid) | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 3.406 | N-Kanal | 60 v | 500 mA (TA) | 10V | 5ohm @ 200 mA, 10V | 3V @ 1ma | ± 20 V | 40 PF @ 10 V | - - - | 830 MW (TA) | ||||||||||||||||
![]() | SS9012HTA | - - - | ![]() | 2713 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 20 v | 500 mA | 100NA (ICBO) | PNP | 600mv @ 50 mA, 500 mA | 144 @ 50 Ma, 1V | - - - | ||||||||||||||||||
![]() | Irf730b | 0,3200 | ![]() | 471 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 400 V | 5.5a (TC) | 10V | 1OHM @ 2,75a, 10V | 4v @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1000 PF @ 25 V. | - - - | 73W (TC) | ||||||||||||
![]() | FDMC8296 | - - - | ![]() | 8533 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 12a (ta), 18a (TC) | 4,5 V, 10 V. | 8mohm @ 12a, 10V | 3v @ 250 ähm | 23 NC @ 10 V | ± 20 V | 1385 PF @ 15 V | - - - | 2,3 W (TA), 27W (TC) | |||||||||||||||
![]() | FDMC7200S | 1.0000 | ![]() | 3898 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDMC72 | MOSFET (Metalloxid) | 700 MW, 1W | 8-Power33 (3x3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 30V | 7a, 13a | 22mohm @ 6a, 10V | 3v @ 250 ähm | 10nc @ 10v | 660PF @ 15V | Logikpegel -tor | ||||||||||||||||
![]() | FDS5692Z | 1.0700 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 50 v | 5.8a (ta) | 4,5 V, 10 V. | 24MOHM @ 5.8a, 10V | 3v @ 250 ähm | 25 NC @ 10 V | ± 20 V | 1025 PF @ 25 V. | - - - | 2,5 W (TA) | ||||||||||||||
![]() | FDBL0150N60 | 4.4900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDBL0150N60 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 240a (TC) | 10V | 1,5 MOHM @ 80A, 10V | 4v @ 250 ähm | 169 NC @ 10 V | ± 20 V | 10300 PF @ 30 V | - - - | 357W (TJ) | ||||||||||||
![]() | FDS6984As | 0,4200 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 30V | 5,5a, 8,5a | 31mohm @ 5,5a, 10V | 3v @ 250 ähm | 11nc @ 10v | 420PF @ 15V | Logikpegel -tor | ||||||||||||||||
![]() | FDMB2307NZ | 1.0000 | ![]() | 5524 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | FDMB2307 | MOSFET (Metalloxid) | 800 MW | 6-mlp (2x3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (dual) gemeinsame Abfluss | - - - | - - - | - - - | - - - | 28nc @ 5v | - - - | Logikpegel -tor | ||||||||||||||||
![]() | FDS8672s | 0,9800 | ![]() | 363 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 307 | N-Kanal | 30 v | 18a (ta) | 4,5 V, 10 V. | 4,8 MOHM @ 18A, 10V | 3V @ 1ma | 41 nc @ 10 v | ± 20 V | 2670 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||
![]() | Fqpf9n30 | 0,7500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 300 V | 6a (TC) | 10V | 450Mohm @ 3a, 10V | 5 V @ 250 ähm | 22 NC @ 10 V. | ± 30 v | 740 PF @ 25 V. | - - - | 42W (TC) | ||||||||||||||
![]() | SFS9630 | 0,4100 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 200 v | 4.4a (TC) | 10V | 800MOHM @ 2,2A, 10 V. | 4v @ 250 ähm | 36 NC @ 10 V | ± 30 v | 965 PF @ 25 V. | - - - | 33W (TC) | ||||||||||||
![]() | FDMT800152DC | 3.3400 | ![]() | 7916 | 0.00000000 | Fairchild Semiconductor | Dual Cool ™, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | MOSFET (Metalloxid) | 8-Dual Cool ™ 88 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 13a (ta), 72a (TC) | 6 V, 10V | 9mohm @ 13a, 10V | 4v @ 250 ähm | 83 NC @ 10 V | ± 20 V | 5875 PF @ 75 V | - - - | 3.2W (TA), 113W (TC) | |||||||||||||||
![]() | FDS8949-F085 | - - - | ![]() | 8513 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS89 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 40V | 6a | 29mohm @ 6a, 10V | 3v @ 250 ähm | 11nc @ 5v | 955PF @ 20V | Logikpegel -tor | ||||||||||||||||
![]() | FQB4N80TM | 1.0000 | ![]() | 1932 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 800 V | 3.9a (TC) | 10V | 3,6OHM @ 1,95A, 10V | 5 V @ 250 ähm | 25 NC @ 10 V | ± 30 v | 880 PF @ 25 V. | - - - | 3.13W (TA), 130 W (TC) | |||||||||||||||
![]() | FDZ2552p | 1.2200 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-WFBGA | FDZ25 | MOSFET (Metalloxid) | 2.1W (TA) | 18-bga (2,5 x 4) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 P-Kanal (Dual) Gemeinsamer Abfluss | 20V | 5.5a (TA) | 45mohm @ 5,5a, 4,5 V. | 1,5 V @ 250 ähm | 13nc @ 4,5V | 884PF @ 10V | - - - | |||||||||||||
![]() | FDS6679Az | 1.0000 | ![]() | 9256 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 30 v | 13a (ta) | 4,5 V, 10 V. | 9,3mohm @ 13a, 10V | 3v @ 250 ähm | 96 NC @ 10 V | ± 25 V | 3845 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||
![]() | FCH20N60 | 2.6500 | ![]() | 838 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 600 V | 20A (TC) | 10V | 190mohm @ 10a, 10V | 5 V @ 250 ähm | 98 NC @ 10 V. | ± 30 v | 3080 PF @ 25 V. | - - - | 208W (TC) | ||||||||||||||
![]() | FDP15N50F102 | - - - | ![]() | 4852 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDP15N | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 106 | - - - | |||||||||||||||||||||||||
![]() | FDS4070N3 | 1.6200 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 15.3a (ta) | 10V | 7,5 MOHM @ 15,3a, 10V | 5 V @ 250 ähm | 67 NC @ 10 V | ± 20 V | 2819 PF @ 20 V | - - - | 3W (TA) | ||||||||||||||
![]() | FDZ206P | 0,5100 | ![]() | 369 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 30-WFBGA | MOSFET (Metalloxid) | 30-bga (4x3,5) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 4.000 | P-Kanal | 20 v | 13a (ta) | 2,5 V, 4,5 V. | 9,5 MOHM @ 13A, 4,5 V. | 1,5 V @ 250 ähm | 53 NC @ 4,5 V. | ± 12 V | 4280 PF @ 10 V. | - - - | 2.2W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus