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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkt (Hfe) (min) @ ic, vce | Frequenz - übergang |
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![]() | FDS9933 | 0,3600 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS99 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 p-kanal (dual) | 20V | 5a | 55mohm @ 3,2a, 4,5 V. | 1,2 V @ 250 ähm | 20nc @ 4,5 V | 825PF @ 10V | Logikpegel -tor | |||||||||||||||
![]() | KSA709GTA | - - - | ![]() | 3660 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 150 v | 700 Ma | 100NA (ICBO) | PNP | 400mv @ 20 mA, 200 mA | 200 @ 50 Ma, 2V | 50 MHz | ||||||||||||||||||
![]() | FDU6692 | 1.2800 | ![]() | 62 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-251-3 Stub Leads, ipak | MOSFET (Metalloxid) | To-251 (ipak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 54a (ta) | 4,5 V, 10 V. | 12mohm @ 14a, 10V | 3v @ 250 ähm | 25 NC @ 5 V | ± 16 v | 2164 PF @ 15 V | - - - | 1.6W (TA) | ||||||||||||
![]() | SSW4N60BTM | - - - | ![]() | 2800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 4a (TC) | 10V | 2,5OHM @ 2a, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 920 PF @ 25 V. | - - - | 3.13W (TA), 100 W (TC) | ||||||||||||
![]() | FDM2509nz | 0,3700 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-udfn exponiert pad | FDM2509 | MOSFET (Metalloxid) | 800 MW | Mikrofet 2x2 Dünn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 20V | 8.7a | 18mohm @ 8,7a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1200PF @ 10V | Logikpegel -tor | |||||||||||||||
![]() | FCB20N60-F085 | - - - | ![]() | 8057 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101, Superfet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 20A (TC) | 198mohm @ 20a, 10V | 5 V @ 250 ähm | 102 NC @ 10 V | ± 30 v | 3080 PF @ 25 V. | - - - | 341W (TC) | |||||||||||||
![]() | SI3948DV | - - - | ![]() | 3735 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3948 | MOSFET (Metalloxid) | 700 MW (TA) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 30V | 2,5a (TA) | 145mohm @ 2a, 4,5 V. | 3v @ 250 ähm | 3.2nc @ 5v | 220PF @ 15V | Logikpegel -tor | |||||||||||||
![]() | FDD7030BL | 0,4400 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 14A (TA), 56a (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 14A, 10V | 3v @ 250 ähm | 20 NC @ 5 V | ± 20 V | 1425 PF @ 15 V | - - - | 2,8 W (TA), 60 W (TC) | ||||||||||||||
![]() | KSA1242Ytu | 0,1800 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | 10 w | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 5.040 | 20 v | 5 a | 100 µA (ICBO) | PNP | 1v @ 100 mA, 4a | 160 @ 500 mA, 2V | 180 MHz | ||||||||||||||||||
![]() | FCPF11N60NT | 2.2300 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | Supermos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 135 | N-Kanal | 600 V | 10.8a (TC) | 10V | 299mohm @ 5.4a, 10V | 4v @ 250 ähm | 35.6 NC @ 10 V. | ± 30 v | 1505 PF @ 100 V | - - - | 32.1W (TC) | |||||||||||||||
![]() | TN6719a | - - - | ![]() | 4174 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.500 | 300 V | 200 ma | 100NA (ICBO) | Npn | 750 mv @ 3ma, 30 mA | 40 @ 30 ma, 10V | - - - | ||||||||||||||||||
![]() | PN2222Arp | - - - | ![]() | 7038 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | K. Loch | To-226-3, bis 92-3 (to-226aa) | PN2222 | 625 MW | To-92-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1 | 40 v | 1 a | 10na | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | |||||||||||||||
![]() | Fqi4n20 | - - - | ![]() | 4903 | 0.00000000 | Fairchild Semiconductor | QFET ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 950 | N-Kanal | 200 v | 3.6a (TC) | 10V | 1,4OHM @ 1,8a, 10V | 5 V @ 250 ähm | 6,5 NC @ 10 V. | ± 30 v | 220 PF @ 25 V. | - - - | 3.13W (TA), 45W (TC) | ||||||||||||
![]() | KSC2331YTA | 0,0600 | ![]() | 387 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | KSC2331 | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 700 mv @ 50 mA, 500 mA | 120 @ 50 Ma, 2V | 50 MHz | |||||||||||||||
![]() | BC856CMTF | - - - | ![]() | 7356 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC856 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | |||||||||||||||
![]() | FDWS9420-F085 | 0,8100 | ![]() | 6697 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDWS9 | MOSFET (Metalloxid) | 75W | 8-PQFN (5x6) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 312 | 2 n-kanal (dual) | 40V | 20A (TC) | 5.8mohm @ 20a, 10V | 4v @ 250 ähm | 43nc @ 10v | 2100pf @ 20V | - - - | |||||||||||||
![]() | Fqpf3n90 | 1.2300 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 900 V | 2.1a (TC) | 10V | 4.25ohm @ 1.05a, 10 V. | 5 V @ 250 ähm | 26 NC @ 10 V | ± 30 v | 910 PF @ 25 V. | - - - | 43W (TC) | ||||||||||||||
![]() | NDS355an-F169 | - - - | ![]() | 4005 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156S355an-F169-600039 | 1 | N-Kanal | 30 v | 1.7a (ta) | 4,5 V, 10 V. | 85mohm @ 1,9a, 10V | 2v @ 250 ähm | 5 NC @ 5 V. | ± 20 V | 195 PF @ 15 V | - - - | 500 MW (TA) | ||||||||||||||
![]() | BC32840ta | 0,0200 | ![]() | 6097 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 14.000 | 25 v | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 250 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||
![]() | FDB16AN08A0 | 1.3700 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 239 | N-Kanal | 75 V | 9A (TA), 58a (TC) | 6 V, 10V | 16mohm @ 58a, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 1857 PF @ 25 V. | - - - | 135W (TC) | |||||||||||||||
![]() | FDMS8023S | 0,6200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 483 | N-Kanal | 30 v | 26a (ta), 49a (TC) | 4,5 V, 10 V. | 2,4 MOHM @ 26a, 10V | 3V @ 1ma | 57 NC @ 10 V | ± 20 V | 3550 PF @ 15 V | - - - | 2,5 W (TA), 59W (TC) | |||||||||||||||
![]() | 2n5086 | - - - | ![]() | 2079 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1,5 w | To-92 | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-2N5086-600039 | 1 | 50 v | 50 ma | 50na (ICBO) | PNP | 300 mV @ 1ma, 10 mA | 150 @ 1ma, 5V | 40 MHz | ||||||||||||||||||
![]() | KSD362R | 0,2000 | ![]() | 4647 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 40 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.170 | 70 V | 5 a | 20 µA (ICBO) | Npn | 1v @ 500 mA, 5a | 40 @ 5a, 5V | 10 MHz | ||||||||||||||||||
![]() | 2N6076 | 0,0200 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 25 v | 500 mA | 100na | PNP | 250 mV @ 1ma, 10 mA | 100 @ 10 Ma, 1V | - - - | ||||||||||||||||||
![]() | HUFA76429D3ST | 0,9200 | ![]() | 38 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 23mohm @ 20a, 10V | 3v @ 250 ähm | 46 NC @ 10 V | ± 16 v | 1480 PF @ 25 V. | - - - | 110W (TC) | ||||||||||||||
![]() | FDP55N06 | - - - | ![]() | 6365 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 55a (TC) | 10V | 22mohm @ 27.5a, 10V | 4v @ 250 ähm | 37 NC @ 10 V. | ± 25 V | 1510 PF @ 25 V. | - - - | 114W (TC) | |||||||||||||||
![]() | FQA13N50C | 2.0800 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | N-Kanal | 500 V | 13,5a (TC) | 10V | 480MOHM @ 6.75A, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 30 v | 2055 PF @ 25 V. | - - - | 218W (TC) | ||||||||||||||
![]() | FDD6770A | 0,7100 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FDD677 | MOSFET (Metalloxid) | D-Pak (to-252) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 25 v | 24A (TA), 50A (TC) | 4,5 V, 10 V. | 4mohm @ 24a, 10V | 3v @ 250 ähm | 47 NC @ 10 V | ± 20 V | 2405 PF @ 13 V | - - - | 3,7W (TA), 65W (TC) | |||||||||||
![]() | FQB19N20TM | 0,8800 | ![]() | 4720 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 254 | N-Kanal | 200 v | 19,4a (TC) | 10V | 150 MOHM @ 9.7a, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1600 PF @ 25 V. | - - - | 3.13W (TA), 140W (TC) | |||||||||||||||
![]() | KSP2222A | - - - | ![]() | 5922 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1 |
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