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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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SI6467DQ | - - - | ![]() | 4638 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 1 | P-Kanal | 20 v | 9.2a (ta) | 1,8 V, 4,5 V. | 12mohm @ 9,2a, 4,5 V. | 1,5 V @ 250 ähm | 96 NC @ 4,5 V. | ± 8 v | 5878 PF @ 10 V | - - - | 600 MW (TA) | |||||||||||||||||||||||||||
![]() | KSH47TF | 1.0000 | ![]() | 5767 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH47 | 1,56 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 250 V | 1 a | 200 µA | Npn | 1v @ 200 Ma, 1a | 30 @ 300 mA, 10V | 10 MHz | |||||||||||||||||||||||||||||
![]() | FQP7N80 | 1.9400 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 6.6a (TC) | 10V | 1,5OHM @ 3,3A, 10 V. | 5 V @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1850 PF @ 25 V. | - - - | 167W (TC) | ||||||||||||||||||||||||||||
![]() | BC857S | - - - | ![]() | 2842 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | BC857 | 300 MW | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 200 ma | 15NA (ICBO) | 2 PNP (Dual) | 650 mv @ 5ma, 100 mA | 125 @ 2MA, 5V | 200 MHz | |||||||||||||||||||||||||||||
![]() | SGL50N60RUFDTU | - - - | ![]() | 3313 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | SGL50N60 | Standard | 250 w | HPM F2 | - - - | 0000.00.0000 | 1 | 300 V, 50A, 5,9OHM, 15 V. | 100 ns | - - - | 600 V | 80 a | 150 a | 2,8 V @ 15V, 50a | 1,68MJ (EIN), 1,03 MJ (AUS) | 145 NC | 26ns/66ns | |||||||||||||||||||||||||||||
![]() | KSB564AOBU | - - - | ![]() | 6910 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 8.000 | 25 v | 1 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 70 @ 100 mA, 1V | 110 MHz | ||||||||||||||||||||||||||||||||
![]() | SFP9540 | 0,6100 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | P-Kanal | 100 v | 17a (TC) | 10V | 200mohm @ 8.5a, 10V | 4v @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1535 PF @ 25 V. | - - - | 132W (TC) | ||||||||||||||||||||||||||||
![]() | FMM7G30US60I | 28.1700 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | Modul | 104 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | - - - | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-FMM7G30US60i | Ear99 | 8541.29.0095 | 1 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 30 a | 2,7 V @ 15V, 30a | 250 µA | Ja | 2.1 NF @ 30 V | ||||||||||||||||||||||||||||
![]() | FDS9945 | - - - | ![]() | 2555 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS99 | MOSFET (Metalloxid) | 1W (TA) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 60 v | 3,5a (TA) | 100mohm @ 3,5a, 10 V | 3v @ 250 ähm | 13nc @ 5v | 420pf @ 30v | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | Fjn13003ta | 0,1200 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 1,1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | 400 V | 1,5 a | - - - | Npn | 3v @ 500 mA, 1,5a | 9 @ 500 mA, 2V | 4MHz | ||||||||||||||||||||||||||||||||
![]() | MPS751 | 0,1400 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 2,319 | 60 v | 2 a | 100NA (ICBO) | PNP | 500mv @ 200 Ma, 2a | 75 @ 1a, 2v | 75 MHz | |||||||||||||||||||||||||||||||||
![]() | KSA940 | 1.0000 | ![]() | 4371 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 1,5 w | To-220-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 200 | 150 v | 1,5 a | 10 µA (ICBO) | PNP | 1,5 V @ 50 Ma, 500 mA | 40 @ 500 mA, 10 V. | 4MHz | ||||||||||||||||||||||||||||||||
![]() | FFB3904 | 0,0800 | ![]() | 423 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | Ffb39 | 300 MW | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 40V | 200 ma | - - - | 2 NPN (Dual) | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||||||||||||
![]() | BC32725ta | - - - | ![]() | 1604 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | BC32725 | 625 MW | To-92-3 | Herunterladen | 0000.00.0000 | 1 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||
![]() | BCX79 | 1.0000 | ![]() | 6250 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 45 V | 500 mA | 10na | PNP | 600 mV @ 2,5 mA, 100 mA | 80 @ 10ma, 1V | - - - | ||||||||||||||||||||||||||||||||
![]() | KSP45BU | 0,0400 | ![]() | 183 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.000 | 350 V | 300 ma | 500NA | Npn | 750 mv @ 5ma, 50 mA | 50 @ 10 ma, 10V | - - - | ||||||||||||||||||||||||||||||||
![]() | SFR9224TF | 0,2800 | ![]() | 167 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 250 V | 2,5a (TC) | 10V | 2,4OHM @ 1,3a, 10 V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 540 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | ||||||||||||||||||||||||||
![]() | FQPF13N06L | 1.0000 | ![]() | 5466 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 10a (TC) | 5v, 10V | 110Mohm @ 5a, 10V | 2,5 V @ 250 ähm | 6.4 NC @ 5 V. | ± 20 V | 350 PF @ 25 V. | - - - | 24W (TC) | |||||||||||||||||||||||||||||
![]() | KSC1674YTA | 0,0200 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | - - - | 20V | 20 ma | Npn | 120 @ 1ma, 6v | 600 MHz | 3db ~ 5 dB @ 100MHz | ||||||||||||||||||||||||||||||||
![]() | BCX19 | 0,0500 | ![]() | 161 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX19 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.800 | 45 V | 500 mA | 100NA (ICBO) | Npn | 620 MV @ 50 Ma, 500 mA | 100 @ 100 mA, 1V | - - - | |||||||||||||||||||||||||||||
![]() | BDX34B | - - - | ![]() | 5270 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 70 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 200 | 80 v | 10 a | 500 ähm | PNP - Darlington | 2,5 V @ 6ma, 3a | 750 @ 3a, 3v | - - - | ||||||||||||||||||||||||||||||||
![]() | BCW61BMTF | 0,0200 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCW61 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 32 v | 100 ma | 20na | PNP | 550 MV @ 1,25 mA, 50 mA | 140 @ 2MA, 5V | - - - | |||||||||||||||||||||||||||||
![]() | FDMC8327L | 0,4600 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 654 | N-Kanal | 40 v | 12a (ta), 14a (TC) | 4,5 V, 10 V. | 9.7mohm @ 12a, 10V | 3v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1850 PF @ 20 V | - - - | 2,3 W (TA), 30W (TC) | |||||||||||||||||||||||||||||
![]() | FDS6064N7 | 0,8100 | ![]() | 6598 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 310 | N-Kanal | 20 v | 23a (ta) | 1,8 V, 4,5 V. | 3,5 MOHM @ 23A, 4,5 V. | 1,5 V @ 250 ähm | 98 NC @ 4,5 V. | ± 8 v | 7191 PF @ 10 V | - - - | 3W (TA) | ||||||||||||||||||||||||||||
![]() | MMBT4403 | - - - | ![]() | 9368 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT4403 | 250 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 40 v | 600 mA | 100na | PNP | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 2V | 200 MHz | |||||||||||||||||||||||||||||
FDZ7296 | 0,7200 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-WFBGA | MOSFET (Metalloxid) | 18-bga (2,5 x 4) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 11a (ta) | 4,5 V, 10 V. | 8.5Mohm @ 11a, 10V | 3v @ 250 ähm | 31 NC @ 10 V | ± 20 V | 1520 PF @ 15 V | - - - | 2.1W (TA) | |||||||||||||||||||||||||||||
![]() | BC32825ta | 0,0200 | ![]() | 1412 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 596 | 25 v | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||
![]() | NDS8961 | - - - | ![]() | 4953 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS896 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 551 | 2 n-kanal (dual) | 30V | 3.1a | 100MOHM @ 3.1a, 10V | 3v @ 250 ähm | 10nc @ 10v | 190pf @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||||
FDW2511NZ | 0,3600 | ![]() | 348 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 1.6W | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 N-Kanal (dual) gemeinsame Abfluss | 20V | 7.1a | 20mohm @ 7.1a, 4,5 V. | 1,5 V @ 250 ähm | 17.3nc @ 4,5V | 1000pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | BC560BTA | 1.0000 | ![]() | 7158 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz |
Täglich durchschnittliches RFQ -Volumen
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