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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FGD2N40L | 0,2600 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Logik | 29 w | To-252, (d-pak) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 2.500 | 300 V, 2,5a, 51OHM, 4V | - - - | 400 V | 7 a | 29 a | 1,6 V @ 2,4 V, 2,5a | - - - | 11 NC | 47ns/650ns | |||||||||||||||||||||||
![]() | KSC3265YMTF | - - - | ![]() | 4202 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-kSC3265YMTF-600039 | 1 | 25 v | 800 mA | 100na | Npn | 400 mv @ 20 mA, 500 mA | 100 @ 100 mA, 1V | 120 MHz | ||||||||||||||||||||||||||
![]() | KSC5042MSTU | 1.0000 | ![]() | 4655 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | - - - | K. Loch | To-225aa, to-126-3 | 6 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1 | 900 V | 100 ma | 10 µA (ICBO) | Npn | 5v @ 4ma, 20 mA | 30 @ 10ma, 5v | - - - | ||||||||||||||||||||||||||
![]() | BC337A | 0,0600 | ![]() | 4993 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 373 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||
![]() | KST2222AMTF | - - - | ![]() | 3847 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 40 v | 600 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | ||||||||||||||||||||||||
![]() | FDC653N | 0,2500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | Ear99 | 8542.39.0001 | 1,192 | N-Kanal | 30 v | 5a (ta) | 4,5 V, 10 V. | 35mohm @ 5a, 10V | 2v @ 250 ähm | 17 NC @ 10 V | ± 20 V | 350 PF @ 15 V | - - - | 1.6W (TA) | |||||||||||||||||||||||
![]() | HUFA76423D3ST | 0,3300 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 32mohm @ 20a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 16 v | 1060 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||||
![]() | FQI5N30TU | 0,5700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 300 V | 5.4a (TC) | 10V | 900MOHM @ 2,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | 3.13W (TA), 70 W (TC) | ||||||||||||||||||||||
![]() | BC856alt1g | - - - | ![]() | 3244 | 0.00000000 | Fairchild Semiconductor | BC856AL | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 225 MW | SOT-23-3 (to-236) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BC856alt1G-600039 | 1 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 125 @ 2MA, 5V | 100 MHz | ||||||||||||||||||||||||||
![]() | FQAF44N08 | 0,8300 | ![]() | 720 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 80 v | 35.6a (TC) | 10V | 34mohm @ 17.8a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 25 V | 1430 PF @ 25 V. | - - - | 83W (TC) | ||||||||||||||||||||||
![]() | FDS8949-F085 | - - - | ![]() | 8513 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS89 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 40V | 6a | 29mohm @ 6a, 10V | 3v @ 250 ähm | 11nc @ 5v | 955PF @ 20V | Logikpegel -tor | ||||||||||||||||||||||||
![]() | FQAF9N50 | 1.0100 | ![]() | 673 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 500 V | 7.2a (TC) | 10V | 730mohm @ 3.6a, 10V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1450 PF @ 25 V. | - - - | 90W (TC) | ||||||||||||||||||||||
![]() | FDMC0310As | 1.0000 | ![]() | 5497 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 19A (TA), 21A (TC) | 4,5 V, 10 V. | 4,4mohm @ 19a, 10V | 3V @ 1ma | 52 NC @ 10 V | ± 20 V | 3165 PF @ 15 V | - - - | 2,4 W (TA), 36W (TC) | |||||||||||||||||||||||
![]() | HUF75345S3ST_NL | 1.0000 | ![]() | 4487 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 55 v | 75a (TC) | 10V | 7mohm @ 75a, 10V | 4v @ 250 ähm | 275 NC @ 20 V | ± 20 V | 4000 PF @ 25 V. | - - - | 325W (TC) | ||||||||||||||||||||
![]() | Fdd24an06la0 | 1.1300 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 7.1a (TA), 40a (TC) | 5v, 10V | 19Mohm @ 40a, 10V | 2v @ 250 ähm | 21 NC @ 5 V | ± 20 V | 1850 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||||
![]() | Fmb857b | 0,2400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | 700 MW | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 45 V | 500 mA | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 220 @ 2MA, 5V | - - - | ||||||||||||||||||||||||||
![]() | FDU8882 | 0,5100 | ![]() | 9933 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 518 | N-Kanal | 30 v | 12,6a (TA), 55A (TC) | 4,5 V, 10 V. | 11,5 MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 33 NC @ 10 V. | ± 20 V | 1260 PF @ 15 V | - - - | 55W (TC) | ||||||||||||||||||||||
![]() | Fqd5n15tf | 0,2000 | ![]() | 7085 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.301 | N-Kanal | 150 v | 4.3a (TC) | 10V | 800mohm @ 2.15a, 10 V. | 4v @ 250 ähm | 7 NC @ 10 V | ± 25 V | 230 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | ||||||||||||||||||||||
![]() | KSA812YMTF-FS | 0,0200 | ![]() | 974 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 150 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 135 @ 1ma, 6v | 180 MHz | ||||||||||||||||||||||||
![]() | KSA1156OSTSTU | 0,1800 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | KSA1156 | 1 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 500 mA | 100 µA (ICBO) | PNP | 1v @ 10 mA, 100 mA | 60 @ 100 Ma, 5V | - - - | |||||||||||||||||||||||
![]() | FQI5N60CTU | 0,8600 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 4,5a (TC) | 10V | 2,5OHM @ 2,25a, 10 V. | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 670 PF @ 25 V. | - - - | 3.13W (TA), 100 W (TC) | |||||||||||||||||||||||
![]() | BC33740BU | - - - | ![]() | 7351 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | - - - | 0000.00.0000 | 1 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 250 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||
![]() | KSC1008COTA | 0,0200 | ![]() | 5300 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 70 @ 50 Ma, 2V | 50 MHz | ||||||||||||||||||||||||
![]() | SFP9540 | 0,6100 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | P-Kanal | 100 v | 17a (TC) | 10V | 200mohm @ 8.5a, 10V | 4v @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1535 PF @ 25 V. | - - - | 132W (TC) | ||||||||||||||||||||||
![]() | FOD817X_5701W | 0,1100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | FDA20N50 | 3.1900 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 22a (TC) | 230mohm @ 11a, 10V | 5 V @ 250 ähm | 59,5 NC @ 10 V. | 3120 PF @ 25 V. | - - - | ||||||||||||||||||||||||||
![]() | RFP50N06 | - - - | ![]() | 6246 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-RFP50N06-600039 | 1 | N-Kanal | 60 v | 50a (TC) | 10V | 22mohm @ 50a, 10V | 4v @ 250 ähm | 150 NC @ 20 V | ± 20 V | 2020 PF @ 25 V | - - - | 131W (TC) | ||||||||||||||||||||||
![]() | FDB8453LZ | 0,6700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 16.1a (TA), 50A (TC) | 4,5 V, 10 V. | 7mohm @ 17.6a, 10V | 3v @ 250 ähm | 66 NC @ 10 V | ± 20 V | 3545 PF @ 20 V | - - - | 3.1W (TA), 66W (TC) | ||||||||||||||||||||||
![]() | FDG329N | 0,1700 | ![]() | 383 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metalloxid) | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 1,5a (ta) | 2,5 V, 4,5 V. | 90 MOHM @ 1,5A, 4,5 V. | 1,5 V @ 250 ähm | 4,6 NC @ 4,5 V. | ± 12 V | 324 PF @ 10 V. | - - - | 420 MW (TA) | ||||||||||||||||||||||
![]() | FDU6696 | 0,9100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 13a (ta), 50a (TC) | 4,5 V, 10 V. | 8mohm @ 13a, 10V | 3v @ 250 ähm | 24 nc @ 5 v | ± 16 v | 1715 PF @ 15 V | - - - | 1,6W (TA), 52W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus