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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | HUF76645S3ST | 2.1800 | ![]() | 788 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 75a (TC) | 4,5 V, 10 V. | 14mohm @ 75a, 10V | 3v @ 250 ähm | 153 NC @ 10 V | ± 16 v | 4400 PF @ 25 V. | - - - | 310W (TC) | ||||||||||||||||||||
![]() | FDP8876 | - - - | ![]() | 1788 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 30 v | 70a (TC) | 4,5 V, 10 V. | 8.7mohm @ 40a, 10V | 2,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1700 PF @ 15 V | - - - | 70W (TC) | ||||||||||||||||||||||
![]() | KSC2001YBU | 0,0200 | ![]() | 147 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 600 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 10.000 | 25 v | 700 Ma | 100NA (ICBO) | Npn | 600mv @ 70 mA, 700 mA | 135 @ 100 mA, 1V | 170 MHz | ||||||||||||||||||||||||||
![]() | FDD3706 | 0,6000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | 0000.00.0000 | 500 | N-Kanal | 20 v | 14,7a (TA), 50A (TC) | 2,5 V, 10 V. | 9mohm @ 16.2a, 10V | 1,5 V @ 250 ähm | 23 NC @ 4,5 V. | ± 12 V | 1882 PF @ 10 V. | - - - | 3,8 W (TA), 44W (TC) | ||||||||||||||||||||||||
![]() | HUF75631S3ST | 2.1100 | ![]() | 321 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 33a (TC) | 10V | 40mohm @ 33a, 10V | 4v @ 250 ähm | 79 NC @ 20 V | ± 20 V | 1220 PF @ 25 V. | - - - | 120W (TC) | |||||||||||||||||||||||
![]() | FDP5800 | 1.0000 | ![]() | 3857 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 60 v | 14A (TA), 80A (TC) | 4,5 V, 10 V. | 6mohm @ 80a, 10V | 2,5 V @ 250 ähm | 145 NC @ 10 V. | ± 20 V | 9160 PF @ 15 V | - - - | 242W (TC) | ||||||||||||||||||||||||
![]() | FDG314p | 0,1000 | ![]() | 335 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metalloxid) | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 25 v | 650 Ma (TA) | 2,7 V, 4,5 V. | 1,1OHM @ 500 mA, 4,5 V. | 1,5 V @ 250 ähm | 1,5 NC @ 4,5 V. | ± 8 v | 63 PF @ 10 V | - - - | 750 MW (TA) | ||||||||||||||||||||||
![]() | KSH210TM | 0,3600 | ![]() | 95 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH21 | 1,4 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.500 | 25 v | 5 a | 100NA (ICBO) | PNP | 1,8 V @ 1a, 5a | 45 @ 2a, 1V | 65 MHz | |||||||||||||||||||||||
![]() | IRLS540A | 0,7100 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 17a (TC) | 5v | 58mohm @ 8.5a, 5V | 2v @ 250 ähm | 54 NC @ 5 V. | ± 20 V | 1580 PF @ 25 V. | - - - | 44W (TC) | ||||||||||||||||||||
![]() | FJPF13007H2Ttu | 1.0000 | ![]() | 7569 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 40 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 400 V | 8 a | - - - | Npn | 3v @ 2a, 8a | 26 @ 2a, 5V | 4MHz | ||||||||||||||||||||||||||
![]() | FQI4N20TU | 0,3100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 3.6a (TC) | 10V | 1,4OHM @ 1,8a, 10V | 5 V @ 250 ähm | 6,5 NC @ 10 V. | ± 30 v | 220 PF @ 25 V. | - - - | 3.13W (TA), 45W (TC) | ||||||||||||||||||||||
![]() | KSC2073TU | 0,3100 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 25 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 969 | 150 v | 1,5 a | 10 µA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 40 @ 500 mA, 10 V. | 4MHz | |||||||||||||||||||||||||||
![]() | FDT86106LZ | - - - | ![]() | 2362 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | MOSFET (Metalloxid) | SOT-223-4 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDT86106LZ | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 3.2a (ta) | 4,5 V, 10 V. | 108mohm @ 3.2a, 10V | 2,2 V @ 250 ähm | 7 NC @ 10 V | ± 20 V | 315 PF @ 50 V | - - - | 1W (TA) | ||||||||||||||||||||
![]() | HUFA75329G3 | 98.2200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 55 v | 49a (TC) | 10V | 24MOHM @ 49A, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | ||||||||||||||||||||
![]() | Fqd8n25tf | 0,4600 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 250 V | 6.2a (TC) | 10V | 550MOHM @ 3.1a, 10 V. | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 530 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | ||||||||||||||||||||||
![]() | FDME0106NZT | 0,1600 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powerufdfn | MOSFET (Metalloxid) | Mikrofet 1,6x1.6 Dünn | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 5.000 | N-Kanal | 20 v | 9a (ta) | 1,8 V, 4,5 V. | 18mohm @ 9a, 4,5 V. | 1V @ 250 ähm | 8,5 NC @ 4,5 V | ± 12 V | 865 PF @ 10 V. | - - - | 700 MW (TA) | ||||||||||||||||||||
![]() | Fqpf7n10 | 1.0000 | ![]() | 7595 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 5.5a (TC) | 10V | 350 MOHM @ 2,75A, 10V | 4v @ 250 ähm | 7,5 NC @ 10 V | ± 25 V | 250 PF @ 25 V. | - - - | 23W (TC) | ||||||||||||||||||||||
![]() | FDD8880_F054 | 0,4200 | ![]() | 501 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | NSBC114YDXV6T1G | 0,0800 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8542.39.0001 | 1 | |||||||||||||||||||||||||||||||||||||||
![]() | MJD350TF | - - - | ![]() | 9699 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | Dpak-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-MJD350TF-600039 | 1 | 300 V | 500 mA | 100 µA | PNP | 1v @ 10 mA, 100 mA | 30 @ 50 Ma, 10 V | 10 MHz | ||||||||||||||||||||||||||
![]() | FGH40T65SHD-F155 | 1.0000 | ![]() | 5048 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | FGH40 | Standard | 268 w | To-247 Lange Hinese | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 400 V, 40a, 6OHM, 15 V. | 31.8 ns | TRABENFELD STOPP | 650 V | 80 a | 120 a | 2,1 V @ 15V, 40a | 1,01MJ (EIN), 297 µJ (AUS) | 72.2 NC | 19,2ns/65,6ns | |||||||||||||||||||
![]() | Fdb8444ts | 1.0000 | ![]() | 9156 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-6, d²pak (5 Leads + Tab), to-263ba | MOSFET (Metalloxid) | To-263-5 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 20A (TA), 70A (TC) | 10V | 5mohm @ 70a, 10V | 4v @ 250 ähm | 338 NC @ 20 V | ± 20 V | 8410 PF @ 25 V. | - - - | 181W (TC) | ||||||||||||||||||||||
![]() | SFS9Z34 | 0,3700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 12a (TC) | 10V | 140Mohm @ 6a, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1155 PF @ 25 V. | - - - | 36W (TC) | ||||||||||||||||||||
![]() | FDZ206P | 0,5100 | ![]() | 369 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 30-WFBGA | MOSFET (Metalloxid) | 30-bga (4x3,5) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 4.000 | P-Kanal | 20 v | 13a (ta) | 2,5 V, 4,5 V. | 9,5 MOHM @ 13A, 4,5 V. | 1,5 V @ 250 ähm | 53 NC @ 4,5 V. | ± 12 V | 4280 PF @ 10 V. | - - - | 2.2W (TA) | ||||||||||||||||||||||
![]() | HUF76407D3 | 0,3700 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | ||||||||||||||||||||||
![]() | SFR9224TF | 0,2800 | ![]() | 167 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 250 V | 2,5a (TC) | 10V | 2,4OHM @ 1,3a, 10 V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 540 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | ||||||||||||||||||||
![]() | FGD2N40L | 0,2600 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Logik | 29 w | To-252, (d-pak) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 2.500 | 300 V, 2,5a, 51OHM, 4V | - - - | 400 V | 7 a | 29 a | 1,6 V @ 2,4 V, 2,5a | - - - | 11 NC | 47ns/650ns | |||||||||||||||||||||||
![]() | KSC3265YMTF | - - - | ![]() | 4202 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-kSC3265YMTF-600039 | 1 | 25 v | 800 mA | 100na | Npn | 400 mv @ 20 mA, 500 mA | 100 @ 100 mA, 1V | 120 MHz | ||||||||||||||||||||||||||
![]() | KSC5042MSTU | 1.0000 | ![]() | 4655 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | - - - | K. Loch | To-225aa, to-126-3 | 6 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1 | 900 V | 100 ma | 10 µA (ICBO) | Npn | 5v @ 4ma, 20 mA | 30 @ 10ma, 5v | - - - | ||||||||||||||||||||||||||
![]() | BC337A | 0,0600 | ![]() | 4993 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 373 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus