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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | BCX79 | 1.0000 | ![]() | 6250 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 45 V | 500 mA | 10na | PNP | 600 mV @ 2,5 mA, 100 mA | 80 @ 10ma, 1V | - - - | ||||||||||||||||||||||||||||||||
![]() | SFP9644 | 0,7100 | ![]() | 3327 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 322 | P-Kanal | 250 V | 8.6a (TC) | 10V | 800mohm @ 4.3a, 10V | 4v @ 250 ähm | 58 NC @ 10 V | ± 30 v | 1565 PF @ 25 V. | - - - | 123W (TC) | ||||||||||||||||||||||||||
![]() | FDMS0302s | - - - | ![]() | 3283 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 29a (TA), 49a (TC) | 4,5 V, 10 V. | 1,9 Mohm @ 28a, 10V | 3V @ 1ma | 109 NC @ 10 V | ± 20 V | 7350 PF @ 15 V | - - - | 2,5 W (TA), 89W (TC) | |||||||||||||||||||||||||||||
![]() | FDD6030L | 0,8900 | ![]() | 637 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 339 | N-Kanal | 30 v | 12A (TA), 50A (TC) | 4,5 V, 10 V. | 14,5 MOHM @ 12A, 10V | 3v @ 250 ähm | 28 NC @ 5 V | ± 20 V | 1230 PF @ 15 V | - - - | 3,2 W (TA), 56 W (TC) | |||||||||||||||||||||||||||||
![]() | FMG2G400US60 | 124,8000 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-ia | 1136 w | Standard | 19 Uhr-ia | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 10 | Halbbrücke | - - - | 600 V | 400 a | 2,7 V @ 15V, 400a | 250 µA | NEIN | |||||||||||||||||||||||||||||||
![]() | HUF75823D3S | 0,8700 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 150 v | 14a (TC) | 10V | 150 MOHM @ 14A, 10V | 4v @ 250 ähm | 54 NC @ 20 V | ± 20 V | 800 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||||||||
![]() | FQP85N06 | - - - | ![]() | 8435 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 85a (TC) | 10V | 10MOHM @ 42.5A, 10V | 4v @ 250 ähm | 112 NC @ 10 V | ± 25 V | 4120 PF @ 25 V. | - - - | 160W (TC) | |||||||||||||||||||||||||||||
![]() | HUF76429D3ST | 0,5300 | ![]() | 2959 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 404 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 23mohm @ 20a, 10V | 3v @ 250 ähm | 46 NC @ 10 V | ± 16 v | 1480 PF @ 25 V. | - - - | 110W (TC) | ||||||||||||||||||||||||||||
![]() | KSC2001GTA | 0,0200 | ![]() | 2346 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 600 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,934 | 25 v | 700 Ma | 100NA (ICBO) | Npn | 600mv @ 70 mA, 700 mA | 200 @ 100ma, 1V | 170 MHz | ||||||||||||||||||||||||||||||||
![]() | KSD5041RTA | 0,1300 | ![]() | 38 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 2,274 | 20 v | 5 a | 100NA (ICBO) | Npn | 1v @ 100 mA, 3a | 340 @ 500 mA, 2V | 150 MHz | |||||||||||||||||||||||||||||||||
![]() | SSR2N60B | 0,3900 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 1,8a (TC) | 10V | 5ohm @ 900 mA, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 30 v | 490 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | ||||||||||||||||||||||||||
![]() | KSC1393OTA | 1.0000 | ![]() | 1984 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 20 dB ~ 24 dB | 30V | 20 ma | Npn | 60 @ 2ma, 10V | 700 MHz | 2db ~ 3db @ 200 MHz | ||||||||||||||||||||||||||||||||
![]() | FDZ493p | 0,2900 | ![]() | 47 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 9-WFBGA | MOSFET (Metalloxid) | 9-bga (1,55x1,55) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4.6a (TA) | 2,5 V, 4,5 V. | 46mohm @ 4,6a, 4,5 V. | 1,5 V @ 250 ähm | 11 NC @ 4,5 V. | ± 12 V | 754 PF @ 10 V. | - - - | 1.7W (TA) | ||||||||||||||||||||||||||||
![]() | FQH140N10 | - - - | ![]() | 7619 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | N-Kanal | 100 v | 140a (TC) | 10V | 10Mohm @ 70a, 10V | 4v @ 250 ähm | 285 NC @ 10 V | ± 25 V | 7900 PF @ 25 V. | - - - | 375W (TC) | ||||||||||||||||||||||||||||
![]() | Fjv3113rmtf | 0,0200 | ![]() | 60 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV311 | 200 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 2.2 Kohms | 47 Kohms | ||||||||||||||||||||||||||||
![]() | SSU1N60BTU | 0,1400 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 900 Ma (TC) | 10V | 12ohm @ 450 mA, 10V | 4v @ 250 ähm | 7,7 NC @ 10 V | ± 30 v | 215 PF @ 25 V. | - - - | 2,5 W (TA), 28 W (TC) | ||||||||||||||||||||||||||
![]() | NZT753 | 0,3900 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1,2 w | SOT-223-4 | Herunterladen | Ear99 | 8542.39.0001 | 800 | 100 v | 4 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 100 @ 500 mA, 2V | 75 MHz | |||||||||||||||||||||||||||||||||
![]() | FDD8870 | 1.0000 | ![]() | 5773 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 30 v | 21a (Ta), 160a (TC) | 4,5 V, 10 V. | 3,9 MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 118 NC @ 10 V | ± 20 V | 5160 PF @ 15 V | - - - | 160W (TC) | ||||||||||||||||||||||||||||||
![]() | FDY2000PZ | 0,1600 | ![]() | 108 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | FDY20 | MOSFET (Metalloxid) | 446 MW | SOT-563F | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 p-kanal (dual) | 20V | 350 Ma | 1,2OHM @ 350 mA, 4,5 V. | 1,5 V @ 250 ähm | 1,4nc @ 4,5 V | 100pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | HGTG20N60B3-FS | 3.5900 | ![]() | 42 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 165 w | To-247 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | - - - | - - - | 600 V | 40 a | 160 a | 2v @ 15V, 20a | - - - | 135 NC | - - - | |||||||||||||||||||||||||||
![]() | Fqpf1p50 | 1.0000 | ![]() | 5867 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 500 V | 1.03a (TC) | 10V | 10.5OHM @ 515 mA, 10V | 5 V @ 250 ähm | 14 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 28W (TC) | ||||||||||||||||||||||||||||
![]() | FDS5690 | 1.0000 | ![]() | 7301 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 7a (ta) | 6 V, 10V | 28mohm @ 7a, 10V | 4v @ 250 ähm | 32 NC @ 10 V | ± 20 V | 1107 PF @ 30 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||||
![]() | KSC3953DSTU | 0,1000 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,3 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 1.920 | 120 v | 200 ma | 100NA (ICBO) | Npn | 1v @ 3ma, 30 mA | 60 @ 10 ma, 10V | 400 MHz | ||||||||||||||||||||||||||||||||
![]() | Fqpf3n40 | 0,4400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 400 V | 1,6a (TC) | 10V | 3.4ohm @ 800 mA, 10 V. | 5 V @ 250 ähm | 7,5 NC @ 10 V | ± 30 v | 230 PF @ 25 V. | - - - | 20W (TC) | ||||||||||||||||||||||||||||
![]() | NZT751 | 0,5100 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1,2 w | SOT-223-4 | Herunterladen | Ear99 | 8542.39.0001 | 583 | 60 v | 4 a | 100NA (ICBO) | PNP | 500mv @ 200 Ma, 2a | 40 @ 2a, 2v | 75 MHz | |||||||||||||||||||||||||||||||||
![]() | FDM3300NZ | 2.4400 | ![]() | 86 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | FDM3300 | MOSFET (Metalloxid) | 900 MW | Power33 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 20V | 10a | 23mohm @ 10a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1610pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||
![]() | BC846a | 0,0700 | ![]() | 96 | 0.00000000 | Fairchild Semiconductor | SOT-23 | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 3.000 | 65 V | 100 ma | 100NA (ICBO) | Npn | 500 mV @ 5ma, 100 mA | 110 @ 2MA, 5V | 100 MHz | ||||||||||||||||||||||||||||||
![]() | Fqpf12p10 | 0,5700 | ![]() | 114 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | P-Kanal | 100 v | 8.2a (TC) | 10V | 290MOHM @ 4.1a, 10V | 4v @ 250 ähm | 27 NC @ 10 V | ± 30 v | 800 PF @ 25 V. | - - - | 38W (TC) | ||||||||||||||||||||||||||||
![]() | 2SC4853a-4-tl-e | 0,1400 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-2SC4853A-4-TL-E-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9N2357D3ST | 1.0200 | ![]() | 87 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 35a (TC) | 10V | 7mohm @ 35a, 10V | 4v @ 250 ähm | 258 NC @ 20 V | ± 20 V | 5600 PF @ 25 V. | - - - | 100 W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
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