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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | BSR18A | - - - | ![]() | 7229 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | ||||||||||||||||||||||||||||
![]() | FGH40T120SMD | - - - | ![]() | 9903 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | Standard | 555 w | To-247 | Herunterladen | 0000.00.0000 | 1 | 600 V, 40a, 10ohm, 15 V. | 65 ns | TRABENFELD STOPP | 1200 V | 80 a | 160 a | 2,4 V @ 15V, 40a | 2,7MJ (EIN), 1,1MJ (AUS) | 370 NC | 40ns/475ns | |||||||||||||||||||||||||
![]() | 2N3415 | - - - | ![]() | 8717 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 25 v | 500 mA | 100NA (ICBO) | Npn | 300mv @ 3ma, 50 mA | 180 @ 2MA, 4,5 V. | - - - | |||||||||||||||||||||||||||
![]() | MMBT5401-FS | 0,0300 | ![]() | 37 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 10.000 | 150 v | 600 mA | 50na (ICBO) | PNP | 500mv @ 5ma, 50 mA | 60 @ 10ma, 5V | 300 MHz | |||||||||||||||||||||||||
![]() | FDS6692 | 0,6400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 12a (ta) | 4,5 V, 10 V. | 12mohm @ 12a, 10V | 3v @ 250 ähm | 25 NC @ 5 V | ± 16 v | 2164 PF @ 15 V | - - - | 1W (TA) | |||||||||||||||||||||
![]() | FGA6540WDF | 1.0000 | ![]() | 9494 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 238 w | To-3pn | Herunterladen | Ear99 | 8541.29.0095 | 1 | 400 V, 40a, 6OHM, 15 V. | 101 ns | TRABENFELD STOPP | 650 V | 80 a | 120 a | 2,3 V @ 15V, 40a | 1,37MJ (EIN), 250 µJ (AUS) | 55,5 NC | 16,8ns/54,4ns | ||||||||||||||||||||||||
![]() | Fga15n120antdtu | - - - | ![]() | 5007 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA15N120 | Standard | 186 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | 600 V, 15a, 10ohm, 15 V. | 330 ns | Npt und griffen | 1200 V | 30 a | 45 a | 2,4 V @ 15V, 15a | 3MJ (EIN), 600 µJ (AUS) | 120 NC | 15ns/160ns | ||||||||||||||||||||||
![]() | SS9013GTA | 0,0200 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 15.000 | 20 v | 500 mA | 100NA (ICBO) | Npn | 600mv @ 50 mA, 500 mA | 112 @ 50 Ma, 1V | - - - | |||||||||||||||||||||||||||
![]() | HUF75842S3ST | 1.1300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 150 v | 43a (TC) | 10V | 42mohm @ 43a, 10V | 4v @ 250 ähm | 175 NC @ 20 V | ± 20 V | 2730 PF @ 25 V. | - - - | 230W (TC) | |||||||||||||||||||||||
![]() | FDP8440 | 2.3200 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 40 v | 100a (TC) | 4,5 V, 10 V. | 2,2 MOHM @ 80A, 10V | 3v @ 250 ähm | 450 NC @ 10 V | ± 20 V | 24740 PF @ 25 V. | - - - | 306W (TC) | ||||||||||||||||||||||||
![]() | MMBTA05 | - - - | ![]() | 5097 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBTA05 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 60 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||
![]() | TIP42B | 0,4100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 50 | 80 v | 6 a | 700 ähm | PNP | 1,5 V @ 600 Ma, 6a | 15 @ 3a, 4V | 3MHz | |||||||||||||||||||||||||||
![]() | KSA1242OTU | 0,1800 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | 10 w | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 5.040 | 20 v | 5 a | 100 µA (ICBO) | PNP | 1v @ 100 mA, 4a | 100 @ 500 mA, 2V | 180 MHz | |||||||||||||||||||||||||||
![]() | KSB1116AYTA | 0,0400 | ![]() | 233 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 60 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 135 @ 100 mA, 2V | 120 MHz | |||||||||||||||||||||||||||
![]() | FOD817X_5701W | 0,1100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | |||||||||||||||||||||||||||||||||||||
![]() | FSB660 | 0,0900 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 500 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 60 v | 2 a | 100NA (ICBO) | PNP | 350 MV @ 200 Ma, 2a | 100 @ 500 mA, 2V | 75 MHz | |||||||||||||||||||||||||||
![]() | FQP17P06 | - - - | ![]() | 9680 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 60 v | 17a (TC) | 10V | 120 MOHM @ 8.5A, 10V | 4v @ 250 ähm | 27 NC @ 10 V | ± 25 V | 900 PF @ 25 V. | - - - | 79W (TC) | ||||||||||||||||||||||||
![]() | FQAF44N08 | 0,8300 | ![]() | 720 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 80 v | 35.6a (TC) | 10V | 34mohm @ 17.8a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 25 V | 1430 PF @ 25 V. | - - - | 83W (TC) | |||||||||||||||||||||||
![]() | FQP14N15 | 1.0000 | ![]() | 8339 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 150 v | 14,4a (TC) | 10V | 210mohm @ 7.2a, 10V | 4v @ 250 ähm | 23 NC @ 10 V | ± 25 V | 715 PF @ 25 V. | - - - | 104W (TC) | |||||||||||||||||||||||
![]() | FGD3040G2_F085 | - - - | ![]() | 2665 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FGD3040 | Logik | 150 w | To-252, (d-pak) | - - - | 0000.00.0000 | 1 | 300 V, 6,5a, 1kohm, 5 V. | - - - | 400 V | 41 a | 1,25 V @ 4V, 6a | - - - | 21 NC | -/4,8 µs | ||||||||||||||||||||||||||
![]() | FJAF4210Ytu | 1.2300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | FJAF4210 | 80 w | To-3Pf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 140 v | 10 a | 10 µA (ICBO) | PNP | 500mv @ 500 mA, 5a | 90 @ 3a, 4V | 30 MHz | ||||||||||||||||||||||||
![]() | HUF75542p3 | 1.7400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 173 | N-Kanal | 80 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 180 NC @ 20 V. | ± 20 V | 2750 PF @ 25 V. | - - - | 230W (TC) | ||||||||||||||||||||||||
![]() | BC637 | 0,0500 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 60 v | 1 a | 100NA (ICBO) | Npn | 500 mv @ 50 mA, 500 mA | 40 @ 150 mA, 2V | 200 MHz | |||||||||||||||||||||||||||
![]() | FDB8896-F085 | - - - | ![]() | 6463 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FDB8896 | MOSFET (Metalloxid) | To-263ab | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 19A (TA), 93a (TC) | 4,5 V, 10 V. | 5.7mohm @ 35a, 10V | 2,5 V @ 250 ähm | 67 NC @ 10 V | ± 20 V | 2525 PF @ 15 V | - - - | 80W (TC) | ||||||||||||||||||||
![]() | 4N92 | 0,4200 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||
![]() | KSH122TF | - - - | ![]() | 8567 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 8 a | 10 µA | NPN - Darlington | 4v @ 80 Ma, 8a | 1000 @ 4a, 4V | - - - | |||||||||||||||||||||||||
![]() | Fjy4001r | 0,0200 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy400 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 15.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 20 @ 10ma, 5V | 200 MHz | 4.7 Kohms | 4.7 Kohms | |||||||||||||||||||||||||
![]() | FDS5690 | 1.0000 | ![]() | 7301 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 7a (ta) | 6 V, 10V | 28mohm @ 7a, 10V | 4v @ 250 ähm | 32 NC @ 10 V | ± 20 V | 1107 PF @ 30 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||||
![]() | KSA812YMTF-FS | 0,0200 | ![]() | 974 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 150 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 135 @ 1ma, 6v | 180 MHz | |||||||||||||||||||||||||
![]() | RFP40N10_F102 | - - - | ![]() | 7275 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 40a (TC) | 10V | 40mohm @ 40a, 10V | 4v @ 250 ähm | 300 NC @ 20 V | ± 20 V | - - - | 160W (TC) |
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