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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Eccn Htsus Standardpaket Konfiguration FET -Typ Testedingung Gewinnen ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Reverse Recovery Time (TRR) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C Strom - Sammler Cutoff (max) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang RAUSCHFIGUR (DB Typ @ f)
SI9424DY Fairchild Semiconductor Si9424dy 0,4400
RFQ
 ECAD 2179 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 140 P-Kanal 20 v 8a (ta) 2,5 V, 4,5 V. 24MOHM @ 8a, 4,5 V. 1,5 V @ 250 ähm 33 NC @ 5 V. ± 10 V 2260 PF @ 10 V - - - 2,5 W (TA)
FDS7096N3 Fairchild Semiconductor FDS7096N3 0,9900
RFQ
 ECAD 183 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 30 v 14a (ta) 4,5 V, 10 V. 9mohm @ 14a, 10V 3v @ 250 ähm 22 NC @ 5 V ± 20 V 1587 PF @ 15 V - - - 3W (TA)
KSC1008RBU Fairchild Semiconductor KSC1008RBU 0,0300
RFQ
 ECAD 6328 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 800 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 9.000 60 v 700 Ma 100NA (ICBO) Npn 400 mv @ 50 mA, 500 mA 40 @ 50 Ma, 2V 50 MHz
ISL9V3036D3S Fairchild Semiconductor ISL9V3036D3S 1.2300
RFQ
 ECAD 3 0.00000000 Fairchild Semiconductor ECOSPARK® Rohr Veraltet -40 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 Logik 150 w To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.800 300 V, 1kohm, 5V - - - 360 V 21 a 1,6 V @ 4V, 6a - - - 17 NC -/4,8 µs
FDMS3600S Fairchild Semiconductor FDMS3600S - - -
RFQ
 ECAD 6104 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powertdfn FDMS3600 MOSFET (Metalloxid) 2,2 W (TA), 2,5W (TA) 8-PQFN (5x6) Herunterladen Ear99 8542.39.0001 1 2 N-Kanal (Dual) Asymmetrisch 25 v 15A (TA), 30A (TC), 30A (TA), 40A (TC) 5,6 MOHM @ 15A, 10 V, 1,6MOHM @ 30A, 10 V. 2,7 V @ 250 um, 3V @ 1ma 27nc @ 10v, 82nc @ 10v 1680pf @ 13v, 5375Pf @ 13v - - -
FDS5670 Fairchild Semiconductor FDS5670 1.0000
RFQ
 ECAD 5582 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen 0000.00.0000 1 N-Kanal 60 v 10a (ta) 6 V, 10V 14mohm @ 10a, 10V 4v @ 250 ähm 70 nc @ 10 v ± 20 V 2900 PF @ 15 V - - - 2,5 W (TA)
FDMS3600AS Fairchild Semiconductor FDMS3600AS 1.0100
RFQ
 ECAD 15 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powertdfn FDMS3600 MOSFET (Metalloxid) 2,2 W, 2,5W 8-PQFN (5x6) Herunterladen Ear99 8542.39.0001 1 2 N-Kanal (Dual) Asymmetrisch 25 v 15a, 30a 5.6mohm @ 15a, 10V 2,7 V @ 250 ähm 27nc @ 10v 1770pf @ 13v Logikpegel -tor
FQPF10N50CF Fairchild Semiconductor FQPF10N50CF 1.3500
RFQ
 ECAD 67 0.00000000 Fairchild Semiconductor FRFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8542.39.0001 223 N-Kanal 500 V 10a (TC) 10V 610mohm @ 5a, 10V 4v @ 250 ähm 56 NC @ 10 V ± 30 v 2096 PF @ 25 V. - - - 48W (TC)
KSC1008COTA Fairchild Semiconductor KSC1008COTA 0,0200
RFQ
 ECAD 5300 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 800 MW To-92-3 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.21.0095 2.000 60 v 700 Ma 100NA (ICBO) Npn 400 mv @ 50 mA, 500 mA 70 @ 50 Ma, 2V 50 MHz
FGH40T65SPD-F085 Fairchild Semiconductor FGH40T65SPD-F085 2.4800
RFQ
 ECAD 1587 0.00000000 Fairchild Semiconductor Automobil, AEC-Q101 Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 Standard 267 w To-247 Herunterladen Ear99 8542.39.0001 1 400 V, 40a, 6OHM, 15 V. Npt 650 V 80 a 120 a 2,4 V @ 15V, 40a 1,16 MJ (EIN), 270 µJ (AUS) 36 NC 18ns/35ns
FDP8030L Fairchild Semiconductor FDP8030L 4.7200
RFQ
 ECAD 7 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -65 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8542.39.0001 1 N-Kanal 30 v 80A (TA) 4,5 V, 10 V. 3,5 MOHM @ 80A, 10V 2v @ 250 ähm 170 nc @ 5 v ± 20 V 10500 PF @ 15 V - - - 187W (TC)
FQI5N60CTU Fairchild Semiconductor FQI5N60CTU 0,8600
RFQ
 ECAD 35 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen Ear99 8542.39.0001 1 N-Kanal 600 V 4,5a (TC) 10V 2,5OHM @ 2,25a, 10 V. 4v @ 250 ähm 19 NC @ 10 V ± 30 v 670 PF @ 25 V. - - - 3.13W (TA), 100 W (TC)
HUF75545P3 Fairchild Semiconductor HUF75545p3 1.4300
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor Ultrafet ™ Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8542.39.0001 210 N-Kanal 80 v 75a (TC) 10V 10MOHM @ 75A, 10V 4v @ 250 ähm 235 NC @ 20 V ± 20 V 3750 PF @ 25 V. - - - 270W (TC)
FCU850N80Z Fairchild Semiconductor FCU850N80Z 1.1700
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor Superfet® II Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) I-Pak Herunterladen Ear99 8542.39.0001 257 N-Kanal 800 V 6a (TC) 10V 850mohm @ 3a, 10V 4,5 V @ 600 ähm 29 NC @ 10 V ± 20 V 1315 PF @ 100 V - - - 75W (TC)
FGA30T65SHD Fairchild Semiconductor FGA30T65SHD - - -
RFQ
 ECAD 5102 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch TO-3P-3, SC-65-3 FGA30T65 Standard 238 w To-3pn Herunterladen Ear99 8542.39.0001 1 400 V, 30a, 6OHM, 15 V. 31.8 ns TRABENFELD STOPP 650 V 60 a 90 a 2,1 V @ 15V, 30a 598 µj (EIN), 167 µJ (AUS) 54.7 NC 14,4ns/52,8ns
FQPF9N25C Fairchild Semiconductor Fqpf9n25c - - -
RFQ
 ECAD 5673 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8541.29.0095 1 N-Kanal 250 V 8.8a (TC) 10V 430mohm @ 4.4a, 10V 4v @ 250 ähm 35 NC @ 10 V ± 30 v 710 PF @ 25 V. - - - 38W (TC)
FDMA710PZ Fairchild Semiconductor FDMA710PZ - - -
RFQ
 ECAD 8028 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 6-WDFN Exponierte Pad MOSFET (Metalloxid) 6-microfet (2x2) Herunterladen Ear99 8542.29.0095 1 P-Kanal 20 v 7.8a (ta) 1,8 V, 5 V. 24MOHM @ 7.8a, 5V 1,5 V @ 250 ähm 42 NC @ 5 V ± 8 v 2015 PF @ 10 V - - - 900 MW (TA)
FDN338P Fairchild Semiconductor Fdn338p - - -
RFQ
 ECAD 3808 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 MOSFET (Metalloxid) SOT-23-3 Herunterladen 0000.00.0000 1 P-Kanal 20 v 1,6a (ta) 2,5 V, 4,5 V. 115mohm @ 1,6a, 4,5 V. 1,5 V @ 250 ähm 6,2 NC @ 4,5 V. ± 8 v 451 PF @ 10 V. - - - 500 MW (TA)
FDFM2P110 Fairchild Semiconductor FDFM2P110 0,3900
RFQ
 ECAD 2 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 6-WDFN Exponierte Pad MOSFET (Metalloxid) Mikrofet 3x3mm Herunterladen Ear99 8542.39.0001 825 P-Kanal 20 v 3,5a (TA) 2,5 V, 4,5 V. 140 MOHM @ 3,5A, 4,5 V. 1,5 V @ 250 ähm 4 NC @ 4,5 V. ± 12 V 280 PF @ 10 V. Schottky Diode (Isolier) 2W (TA)
FCPF380N65FL1 Fairchild Semiconductor FCPF380N65FL1 - - -
RFQ
 ECAD 6833 0.00000000 Fairchild Semiconductor FRFET®, Superfet® II Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8542.39.0001 1 N-Kanal 650 V 10.2a (TC) 10V 380MOHM @ 5.1a, 10V 5v @ 1ma 43 NC @ 10 V ± 20 V 1680 PF @ 100 V - - - 33W (TC)
FQPF2N70 Fairchild Semiconductor FQPF2N70 0,6300
RFQ
 ECAD 42 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8541.29.0095 1 N-Kanal 700 V 2a (TC) 10V 6.3OHM @ 1a, 10V 5 V @ 250 ähm 11 NC @ 10 V ± 30 v 350 PF @ 25 V. - - - 28W (TC)
FDB3672-F085 Fairchild Semiconductor FDB3672-F085 1.0000
RFQ
 ECAD 9590 0.00000000 Fairchild Semiconductor Automotive, AEC-Q101, Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen Ear99 8542.39.0001 1 N-Kanal 100 v 7.2a (TA), 44a (TC) 6 V, 10V 28mohm @ 44a, 10V 4v @ 250 ähm 31 NC @ 10 V ± 20 V 1710 PF @ 25 V - - - 120W (TC)
MTD3055V Fairchild Semiconductor MTD3055V 1.0000
RFQ
 ECAD 2138 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen Ear99 8542.39.0001 1 N-Kanal 60 v 12a (ta) 10V 150 Mohm @ 6a, 10 V 4v @ 250 ähm 17 NC @ 10 V ± 20 V 500 PF @ 25 V. - - - 3,9W (TA), 48W (TC)
FCD900N60Z Fairchild Semiconductor FCD900N60Z 0,7800
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor Superfet® II Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen Ear99 8541.29.0095 385 N-Kanal 600 V 4,5a (TC) 10V 900mohm @ 2,3a, 10 V 3,5 V @ 250 ähm 17 NC @ 10 V ± 20 V 720 PF @ 25 V. - - - 52W (TC)
FDD8874 Fairchild Semiconductor FDD8874 0,6600
RFQ
 ECAD 3 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen Ear99 8542.39.0001 1 N-Kanal 30 v 18a (TA), 116a (TC) 4,5 V, 10 V. 5.1MOHM @ 35A, 10V 2,5 V @ 250 ähm 72 NC @ 10 V ± 20 V 2990 PF @ 15 V - - - 110W (TC)
FDSS2407 Fairchild Semiconductor FDSS2407 0,7200
RFQ
 ECAD 565 0.00000000 Fairchild Semiconductor Automotive, AEC-Q101, Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) FDSS24 MOSFET (Metalloxid) 2.27W 8-soic Herunterladen Ear99 8542.39.0001 1 2 n-kanal (dual) 62V 3.3a 110 Mohm @ 3,3a, 10 V 3v @ 250 ähm 4.3nc @ 5v 300PF @ 15V Logikpegel -tor
FDPF12N50NZ Fairchild Semiconductor FDPF12N50NZ 0,9800
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor UNIFET-II ™ Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8541.29.0095 306 N-Kanal 500 V 11,5a (TC) 10V 520MOHM @ 5.75A, 10V 5 V @ 250 ähm 30 NC @ 10 V ± 25 V 1235 PF @ 25 V. - - - 42W (TC)
FCH085N80-F155 Fairchild Semiconductor FCH085N80-F155 - - -
RFQ
 ECAD 7391 0.00000000 Fairchild Semiconductor Superfet® II Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247-3 Herunterladen Ear99 8542.39.0001 1 N-Kanal 800 V 46a (TC) 10V 85mohm @ 23a, 10V 4,5 V @ 4,6 mA 255 NC @ 10 V ± 20 V 10825 PF @ 100 V - - - 446W (TC)
MPSA56RA Fairchild Semiconductor MPSA56RA - - -
RFQ
 ECAD 3654 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 625 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 2.000 80 v 500 mA 100na PNP 200mv @ 10ma, 100 mA 100 @ 100 mA, 1V 50 MHz
KSC2756OMTF Fairchild Semiconductor KSC2756OMTF 0,0200
RFQ
 ECAD 6579 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 150 MW SOT-23-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 2.632 15 dB ~ 23 dB 20V 30 ma Npn 90 @ 5ma, 10V 850 MHz 6,5 dB bei 200 MHz
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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