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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie Kraft - Max Eingang LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ Testedingung ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C Strom - Sammler Cutoff (max) NTC Thermistor Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang
FDD6030BL Fairchild Semiconductor FDD6030BL 1.1300
RFQ
 ECAD 71 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 2.500 N-Kanal 30 v 10A (TA), 42A (TC) 4,5 V, 10 V. 16mohm @ 10a, 10V 3v @ 250 ähm 31 NC @ 10 V ± 20 V 1143 PF @ 15 V - - - 1,6W (TA), 50 W (TC)
FDU8874 Fairchild Semiconductor FDU8874 0,7600
RFQ
 ECAD 5 0.00000000 Fairchild Semiconductor Powertrench® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) I-Pak Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.800 N-Kanal 30 v 18a (TA), 116a (TC) 4,5 V, 10 V. 5.1MOHM @ 35A, 10V 2,5 V @ 250 ähm 72 NC @ 10 V ± 20 V 2990 PF @ 15 V - - - 110W (TC)
HUF76432S3STR4908 Fairchild Semiconductor HUF76432S3STR4908 0,9300
RFQ
 ECAD 7476 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv - - - 0000.00.0000 100
KSD1616GBU Fairchild Semiconductor KSD1616GBU 0,0500
RFQ
 ECAD 29 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 750 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 1.000 50 v 1 a 100NA (ICBO) Npn 300 mV @ 50 Ma, 1a 200 @ 100 Ma, 2V 160 MHz
TIP121TU Fairchild Semiconductor TIP121TU 0,4400
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv 150 ° C (TJ) K. Loch To-220-3 2 w To-220-3 Herunterladen Nicht Anwendbar UnberÜHrt Ereichen 2156-TIP121TU-600039 Ear99 8541.29.0095 1 80 v 5 a 500 ähm NPN - Darlington 4v @ 20 mA, 5a 1000 @ 3a, 3v - - -
KSE5020S Fairchild Semiconductor KSE5020S 1.0000
RFQ
 ECAD 2732 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-225aa, to-126-3 30 w To-126-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.000 500 V 3 a 10 µA (ICBO) Npn 1v @ 300 mA, 1,5a 15 @ 300 mA, 5V 18MHz
2N3904BU Fairchild Semiconductor 2N3904BU 0,0400
RFQ
 ECAD 1854 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 Herunterladen Ear99 8541.21.0075 1 40 v 200 ma - - - Npn 300mv @ 5ma, 50 mA 100 @ 10 Ma, 1V 300 MHz
KSD471ACGBU Fairchild Semiconductor KSD471ACGBU 0,0200
RFQ
 ECAD 790 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 800 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 1.000 30 v 1 a 100NA (ICBO) Npn 500mv @ 100 mA, 1a 200 @ 100ma, 1V 130 MHz
FJP5027RTU Fairchild Semiconductor FJP5027Rtu - - -
RFQ
 ECAD 2330 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv 150 ° C (TJ) K. Loch To-220-3 To-220-3 - - - Rohs Nick Konform Verkäfer undefiniert 2156-FJP5027Rtu-600039 1 10 µA (ICBO) Npn 2v @ 300 mA, 1,5a 10 @ 200 Ma, 5V 15 MHz
MJD127TF Fairchild Semiconductor MJD127TF 1.0000
RFQ
 ECAD 5044 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 1,75 w To-252-3 (dpak) Herunterladen Ear99 8542.39.0001 1 100 v 8 a 10 µA PNP - Darlington 4v @ 80 Ma, 8a 1000 @ 4a, 4V - - -
FGH40N60UFTU Fairchild Semiconductor FGH40N60UTU - - -
RFQ
 ECAD 1849 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 Standard 290 w To-247 Herunterladen Ear99 8541.29.0095 1 400 V, 40a, 10ohm, 15 V. Feldstopp 600 V 80 a 120 a 2,4 V @ 15V, 40a 1,19 MJ (EIN), 460 µJ (AUS) 120 NC 24ns/112ns
FDI9406_F085 Fairchild Semiconductor FDI9406_F085 1.3100
RFQ
 ECAD 400 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 1 N-Kanal 40 v 110a (TC) 10V 2,2 MOHM @ 80A, 10V 4v @ 250 ähm 138 NC @ 10 V ± 20 V 7710 PF @ 25 V. - - - 176W (TJ)
FQPF6N25 Fairchild Semiconductor Fqpf6n25 0,3100
RFQ
 ECAD 6445 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 948 N-Kanal 250 V 4a (TC) 10V 1ohm @ 2a, 10V 5 V @ 250 ähm 8,5 NC @ 10 V ± 30 v 300 PF @ 25 V. - - - 37W (TC)
FMG1G200US60L Fairchild Semiconductor FMG1G200US60L 55.6300
RFQ
 ECAD 12 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -40 ° C ~ 150 ° C (TJ) Chassis -berg Modul 695 w Standard - - - Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 1 Einzel - - - 600 V 200 a 2,7 V @ 15V, 200a 250 µA NEIN
HUFA75343P3 Fairchild Semiconductor HUFA75343P3 0,7800
RFQ
 ECAD 643 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 N-Kanal 55 v 75a (TC) 10V 9mohm @ 75a, 10V 4v @ 250 ähm 205 NC @ 20 V ± 20 V 3000 PF @ 25 V. - - - 270W (TC)
BC33740BU Fairchild Semiconductor BC33740BU - - -
RFQ
 ECAD 7351 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 - - - 0000.00.0000 1 45 V 800 mA 100na Npn 700 mv @ 50 mA, 500 mA 250 @ 100 mA, 1V 100 MHz
IRF530A Fairchild Semiconductor Irf530a 0,6300
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8542.39.0001 1 N-Kanal 100 v 14a (TC) 10V 110Mohm @ 7a, 10V 4v @ 250 ähm 36 NC @ 10 V - - - 790 PF @ 25 V. - - - 55W (TC)
2N4400TA Fairchild Semiconductor 2N4400ta 0,0200
RFQ
 ECAD 7295 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 625 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 10.000 40 v 600 mA - - - Npn 750 MV @ 50 Ma, 500 mA 50 @ 150 mA, 1V - - -
BD241BTU Fairchild Semiconductor BD241BTU 0,2500
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch To-220-3 40 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 80 v 3 a 300 µA Npn 1,2 V @ 600 Ma, 3a 25 @ 1a, 4V - - -
FDP2670 Fairchild Semiconductor FDP2670 1.5900
RFQ
 ECAD 6 0.00000000 Fairchild Semiconductor Powertrench® Rohr Veraltet -65 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 N-Kanal 200 v 19a (ta) 10V 130mohm @ 10a, 10V 4,5 V @ 250 ähm 38 nc @ 10 v ± 20 V 1320 PF @ 100 V - - - 93W (TC)
FDQ7238AS Fairchild Semiconductor FDQ7238AS 0,8300
RFQ
 ECAD 643 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 14-SOIC (0,154 ", 3,90 mm Breit) FDQ72 MOSFET (Metalloxid) 1,3W, 1,1W 14-soic Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 2 n-kanal (dual) 30V 14a, 11a 13,2mohm @ 11a, 10V 3v @ 250 ähm 24nc @ 10v 920PF @ 15V Logikpegel -tor
FQB15P12TM Fairchild Semiconductor FQB15P12TM - - -
RFQ
 ECAD 4778 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 800 P-Kanal 120 v 15a (TC) 10V 200mohm @ 7.5a, 10V 4v @ 250 ähm 38 nc @ 10 v ± 30 v 1100 PF @ 25 V. - - - 3,75 W (TA), 100 W (TC)
KSB907TU Fairchild Semiconductor KSB907TU - - -
RFQ
 ECAD 7854 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa 15 w I-Pak Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.347 40 v 3 a 20 µA (ICBO) PNP - Darlington 1,5 V @ 4ma, 2a 1000 @ 3a, 2v - - -
NDS335N Fairchild Semiconductor NDS335N 0,1800
RFQ
 ECAD 95 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 MOSFET (Metalloxid) SOT-23-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 3.000 N-Kanal 20 v 1.7a (ta) 2,7 V, 4,5 V. 110 MOHM @ 1,7A, 4,5 V. 1V @ 250 ähm 9 NC @ 4,5 V. 8v 240 PF @ 10 V - - - 500 MW (TA)
FQI4N20TU Fairchild Semiconductor FQI4N20TU 0,3100
RFQ
 ECAD 5 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 200 v 3.6a (TC) 10V 1,4OHM @ 1,8a, 10V 5 V @ 250 ähm 6,5 NC @ 10 V. ± 30 v 220 PF @ 25 V. - - - 3.13W (TA), 45W (TC)
KSA1625KBU Fairchild Semiconductor KSA1625KBU 0,0200
RFQ
 ECAD 1647 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 750 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 10.050 400 V 500 mA 1 µA (ICBO) PNP 1v @ 10 mA, 100 mA 100 @ 50 Ma, 5V 10 MHz
NDP6030PL Fairchild Semiconductor NDP6030PL 1.0000
RFQ
 ECAD 7658 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet -65 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 P-Kanal 30 v 30a (TC) 4,5 V, 10 V. 25mohm @ 19a, 10V 2v @ 250 ähm 36 NC @ 5 V. ± 16 v 1570 PF @ 15 V - - - 75W (TC)
FQPF5N20L Fairchild Semiconductor Fqpf5n20l 0,3400
RFQ
 ECAD 3 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 200 v 3,5a (TC) 5v, 10V 1,2OHM @ 1,75A, 10V 2v @ 250 ähm 6.2 NC @ 5 V. ± 20 V 325 PF @ 25 V. - - - 32W (TC)
FDS6688AS Fairchild Semiconductor FDS6688as 0,6700
RFQ
 ECAD 11 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 30 v 14,5a (ta) 4,5 V, 10 V. 6mohm @ 14.5a, 10V 3v @ 250 ähm 63 NC @ 10 V ± 20 V 2510 PF @ 15 V - - - 2,5 W (TA)
FDP2552_NL Fairchild Semiconductor FDP2552_NL 1.0000
RFQ
 ECAD 2939 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 1 N-Kanal 150 v 5a (ta), 37a (TC) 10V 36mohm @ 16a, 10V 4v @ 250 ähm 51 NC @ 10 V ± 20 V 2800 PF @ 25 V. - - - 150W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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