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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | NVTFS5824NLTAG | 1.0000 | ![]() | 4641 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | NVTFS5 | MOSFET (Metalloxid) | 8-WDFN (3,3x3,3) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1.500 | N-Kanal | 60 v | 37a (TC) | 4,5 V, 10 V. | 20,5 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 16 NC @ 10 V | ± 20 V | 850 PF @ 25 V. | - - - | 3,2 W (TA), 57W (TC) | |||||||||||||||||||||
![]() | FDS6162N7 | 2.0100 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 23a (ta) | 2,5 V, 4,5 V. | 3,5 MOHM @ 23A, 4,5 V. | 1,5 V @ 250 ähm | 73 NC @ 4,5 V. | ± 12 V | 5521 PF @ 10 V | - - - | 3W (TA) | ||||||||||||||||||||||||
![]() | ISL9N312AD3ST | 0,2900 | ![]() | 138 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 50a (TC) | 4,5 V, 10 V. | 12mohm @ 50a, 10V | 3v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1450 PF @ 15 V | - - - | 75W (TA) | ||||||||||||||||||||||
![]() | RFD16N05 | 1.0000 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | RFD16 | MOSFET (Metalloxid) | I-Pak | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 75 | N-Kanal | 50 v | 16a (TC) | 10V | 47mohm @ 16a, 10V | 4v @ 250 ähm | 80 nc @ 20 V | ± 20 V | 900 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||||||||||||
![]() | FGH30T65UPDT_F155 | - - - | ![]() | 1617 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | Standard | 250 w | To-247-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 30a, 8ohm, 15 V. | 33 ns | TRABENFELD STOPP | 650 V | 60 a | 90 a | 2,3 V @ 15V, 30a | 760 µJ (EIN), 400 µJ (AUS) | 155 NC | 22ns/139ns | |||||||||||||||||||||||||
![]() | FDD6685 | - - - | ![]() | 2428 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 30 v | 11a (ta), 40a (TC) | 4,5 V, 10 V. | 20mohm @ 11a, 10V | 3v @ 250 ähm | 24 nc @ 5 v | ± 25 V | 1715 PF @ 15 V | - - - | 1.6W (TA) | |||||||||||||||||||||||||
![]() | FQPF32N12V2 | 1.4400 | ![]() | 83 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 120 v | 32a (TC) | 10V | 50mohm @ 16a, 10V | 4v @ 250 ähm | 53 NC @ 10 V | ± 30 v | 1860 PF @ 25 V. | - - - | 50W (TC) | ||||||||||||||||||||||||
![]() | FCH130N60 | 2.3700 | ![]() | 144 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 28a (TC) | 10V | 130Mohm @ 14a, 10V | 3,5 V @ 250 ähm | 70 nc @ 10 v | ± 20 V | 3590 PF @ 380 V | - - - | 278W (TC) | |||||||||||||||||||||||||
![]() | HGTG7N60A4D | - - - | ![]() | 3040 | 0.00000000 | Fairchild Semiconductor | SMPS | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 125 w | To-247-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-HGTG7N60A4D-600039 | 1 | 390 V, 7a, 25 Ohm, 15 V | 34 ns | - - - | 600 V | 34 a | 56 a | 2,7 V @ 15V, 7a | 55 µJ (EIN), 60 µJ (AUS) | 37 NC | 11ns/100 ns | ||||||||||||||||||||||||
![]() | FDB7030BLS | 1.8700 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 60a (ta) | 4,5 V, 10 V. | 9mohm @ 30a, 10V | 3v @ 250 ähm | 24 nc @ 5 v | ± 20 V | 1760 PF @ 15 V | - - - | 60 W (TC) | ||||||||||||||||||||||
![]() | FPF2C110BI07AS2 | 77.7900 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FPF2C110BI07AS2-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | FDP040N06 | 1.7300 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 120a (TC) | 10V | 4mohm @ 75a, 10V | 4,5 V @ 250 ähm | 133 NC @ 10 V | ± 20 V | 8235 PF @ 25 V. | - - - | 231W (TC) | ||||||||||||||||||||||||
![]() | Fjv3111rmtf | - - - | ![]() | 4062 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV311 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 250 MHz | 22 Kohms | |||||||||||||||||||||||||||
![]() | BC848BMTF | 0,0200 | ![]() | 271 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 300 MHz | ||||||||||||||||||||||||||
![]() | PN2907ta | 0,0200 | ![]() | 101 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 40 v | 800 mA | 20na (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | - - - | ||||||||||||||||||||||||||||
![]() | FGD3245G2 | 1.0000 | ![]() | 4146 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.500 | ||||||||||||||||||||||||||||||||||||||
![]() | Huf75545p3_nl | 2.1100 | ![]() | 9855 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 100 | N-Kanal | 80 v | 75a (TC) | 10V | 10MOHM @ 75A, 10V | 4v @ 250 ähm | 235 NC @ 20 V | ± 20 V | 3750 PF @ 25 V. | - - - | 270W (TC) | ||||||||||||||||||||||
![]() | BSP51 | 1.0000 | ![]() | 2612 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1 w | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 80 v | 500 mA | 10 µA | NPN - Darlington | 1,3 V @ 500 µA, 500 mA | 1000 @ 150 mA, 10V | - - - | ||||||||||||||||||||||||||||
![]() | FGB20N60SF | 1,8000 | ![]() | 726 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | 208 w | D2pak (to-263) | Herunterladen | Ear99 | 8541.29.0095 | 167 | 400 V, 20A, 10OHM, 15 V. | Feldstopp | 600 V | 40 a | 60 a | 2,8 V @ 15V, 20a | 370 µJ (EIN), 160 µJ (AUS) | 65 NC | 13ns/90ns | ||||||||||||||||||||||||||
![]() | Fdb15n50_nl | 2.1300 | ![]() | 9308 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 6 | N-Kanal | 500 V | 15a (TC) | 10V | 380MOHM @ 7,5a, 10V | 4v @ 250 ähm | 41 nc @ 10 v | ± 30 v | 1850 PF @ 25 V. | - - - | 300 W (TC) | ||||||||||||||||||||||
![]() | FDD20AN06A0-F085 | - - - | ![]() | 2385 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDD20AN06A0-F085-600039 | 1 | N-Kanal | 60 v | 8A (TA), 45A (TC) | 10V | 20mohm @ 45a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 950 PF @ 25 V. | - - - | 90W (TC) | ||||||||||||||||||||||||
![]() | FGH40N65UFDTU-F085 | - - - | ![]() | 1254 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 290 w | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 40a, 10ohm, 15 V. | 65 ns | Feldstopp | 650 V | 80 a | 120 a | 2,4 V @ 15V, 40a | 1,28 MJ (EIN), 500 µJ (AUS) | 119 NC | 23ns/126ns | |||||||||||||||||||||||||
![]() | FQB19N10LTM | 0,6000 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 19A (TC) | 5v, 10V | 100mohm @ 9.5a, 10V | 2v @ 250 ähm | 18 NC @ 5 V. | ± 20 V | 870 PF @ 25 V. | - - - | 3,75W (TA), 75W (TC) | ||||||||||||||||||||||||
![]() | FQB12N50TM | 1.0700 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Fqb12n | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 800 | - - - | |||||||||||||||||||||||||||||||||||
![]() | FJX3013RTF | 1.0000 | ![]() | 6190 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-70, SOT-323 | FJX301 | 200 MW | SC-70-3 (SOT323) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 2.2 Kohms | 47 Kohms | ||||||||||||||||||||||||||
![]() | HUF75545p3 | 1.4300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 210 | N-Kanal | 80 v | 75a (TC) | 10V | 10MOHM @ 75A, 10V | 4v @ 250 ähm | 235 NC @ 20 V | ± 20 V | 3750 PF @ 25 V. | - - - | 270W (TC) | |||||||||||||||||||||||||
![]() | FQAF33N10 | 0,7200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 100 v | 25,8a (TC) | 10V | 52mohm @ 12.9a, 10V | 4v @ 250 ähm | 51 NC @ 10 V | ± 25 V | 1500 PF @ 25 V. | - - - | 83W (TC) | ||||||||||||||||||||||||
![]() | NJVMJD122T4G-VF01 | - - - | ![]() | 2669 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | Dpak | Herunterladen | Ear99 | 8542.39.0001 | 1 | 100 v | 8 a | 10 µA | NPN - Darlington | 4v @ 8a, 80 mA | 1000 @ 4a, 4V | - - - | |||||||||||||||||||||||||||||
![]() | FDS2170N7 | 2.0100 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 200 v | 3a (ta) | 10V | 128mohm @ 3a, 10V | 4,5 V @ 250 ähm | 36 NC @ 10 V | ± 20 V | 1292 PF @ 100 V | - - - | 3W (TA) | ||||||||||||||||||||||||
![]() | BD13610S | 0,2300 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,25 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 1,421 | 45 V | 1,5 a | 100NA (ICBO) | PNP | 500 mv @ 50 mA, 500 mA | 63 @ 150 mA, 2V | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus