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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | ISL9N2357D3ST | 1.0200 | ![]() | 87 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 35a (TC) | 10V | 7mohm @ 35a, 10V | 4v @ 250 ähm | 258 NC @ 20 V | ± 20 V | 5600 PF @ 25 V. | - - - | 100 W (TC) | ||||||||||||||||||||||
![]() | BCW60D | 1.0000 | ![]() | 7088 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 32 v | 100 ma | 20na | Npn | 550 MV @ 1,25 mA, 50 mA | 380 @ 2MA, 5V | 125 MHz | ||||||||||||||||||||||||||||
![]() | FDS6890a | - - - | ![]() | 7131 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS6890 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 20V | 7.5a | 18mohm @ 7,5a, 4,5 V. | 1,5 V @ 250 ähm | 32nc @ 4,5V | 2130pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | FCPF380N60E-F152 | - - - | ![]() | 5776 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | - - - | 2156-FCPF380N60E-F152 | 1 | N-Kanal | 600 V | 10.2a (TC) | 10V | 380Mohm @ 5a, 10V | 3,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1770 PF @ 25 V. | - - - | 31W (TC) | ||||||||||||||||||||||||||
![]() | FDS3670 | 1.6700 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 6.3a (ta) | 6 V, 10V | 32mohm @ 6.3a, 10V | 4v @ 250 ähm | 80 nc @ 10 v | ± 20 V | 2490 PF @ 50 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||||
![]() | IRFS250B | - - - | ![]() | 9472 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 21.3a (TC) | 10V | 85mohm @ 10.65a, 10V | 4v @ 250 ähm | 123 NC @ 10 V | ± 30 v | 3400 PF @ 25 V. | - - - | 90W (TC) | ||||||||||||||||||||||
![]() | FDS7766 | 0,9400 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 17a (ta) | 4,5 V, 10 V. | 5mohm @ 17a, 10V | 3v @ 250 ähm | 69 NC @ 5 V. | ± 16 v | 4973 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||
![]() | KSC1393YBU | 0,0200 | ![]() | 879 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 20 dB ~ 24 dB | 30V | 20 ma | Npn | 90 @ 2MA, 10V | 700 MHz | 2db ~ 3db @ 200 MHz | ||||||||||||||||||||||||||||
![]() | MPSH34 | - - - | ![]() | 5158 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.694 | 40 v | 50 ma | 50na (ICBO) | Npn | 500mv @ 2MA, 7ma | 15 @ 20 mA, 2V | 500 MHz | ||||||||||||||||||||||||||||
![]() | KSD5041RTA | 0,1300 | ![]() | 38 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 2,274 | 20 v | 5 a | 100NA (ICBO) | Npn | 1v @ 100 mA, 3a | 340 @ 500 mA, 2V | 150 MHz | |||||||||||||||||||||||||||||
![]() | KSD261CYBU | 0,0300 | ![]() | 3939 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 9.000 | 20 v | 500 mA | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 120 @ 100 mA, 1V | - - - | ||||||||||||||||||||||||||||
![]() | 2N4401RA | - - - | ![]() | 7300 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 2N4401 | 625 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 2.000 | 40 v | 600 mA | 100na | Npn | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 1V | 250 MHz | |||||||||||||||||||||||||
![]() | RFD4N06LSM9A | 0,5600 | ![]() | 67 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 4a (TC) | 5v | 600MOHM @ 1A, 5V | 2,5 V @ 250 ähm | 8 NC @ 10 V | ± 10 V | - - - | 30W (TC) | |||||||||||||||||||||||||
![]() | MMBT200 | - - - | ![]() | 9440 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-MMBT200-600039 | 1 | 45 V | 500 mA | 50na | PNP | 400mv @ 20 mA, 200 mA | 100 @ 150 mA, 5V | 250 MHz | ||||||||||||||||||||||||||||
![]() | SFR9024TF | 0,4400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 7.8a (TC) | 10V | 280 MOHM @ 3,9a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 600 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | ||||||||||||||||||||||
![]() | HUF75823D3S | 0,8700 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 150 v | 14a (TC) | 10V | 150 MOHM @ 14A, 10V | 4v @ 250 ähm | 54 NC @ 20 V | ± 20 V | 800 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||||
![]() | Fqu2n60ctu | - - - | ![]() | 5779 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 1,9a (TC) | 10V | 4.7ohm @ 950 mA, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 30 v | 235 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | |||||||||||||||||||||||||
![]() | FDPF9N50NZ | - - - | ![]() | 2422 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220-3 Fullpack/to-220F-3SG | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDPF9N50NZ-600039 | 1 | N-Kanal | 500 V | 9a (TC) | 10V | 800 MOHM @ 4,5A, 10 V. | 4v @ 250 ähm | 35 NC @ 10 V | ± 30 v | 1030 PF @ 25 V. | - - - | 44W (TC) | ||||||||||||||||||||||||
![]() | HUFA75307D3ST | 0,2400 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 55 v | 15a (TC) | 10V | 90 MOHM @ 15a, 10V | 4v @ 250 ähm | 20 NC @ 20 V | ± 20 V | 250 PF @ 25 V. | - - - | 45W (TC) | ||||||||||||||||||||||||
![]() | FDB20AN06A0 | 0,5500 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 9A (TA), 45A (TC) | 10V | 20mohm @ 45a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 950 PF @ 25 V. | - - - | 90W (TC) | ||||||||||||||||||||||||
![]() | Fdb8444ts | 1.0000 | ![]() | 9156 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-6, d²pak (5 Leads + Tab), to-263ba | MOSFET (Metalloxid) | To-263-5 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 20A (TA), 70A (TC) | 10V | 5mohm @ 70a, 10V | 4v @ 250 ähm | 338 NC @ 20 V | ± 20 V | 8410 PF @ 25 V. | - - - | 181W (TC) | ||||||||||||||||||||||||
![]() | KSA1201YTF | - - - | ![]() | 8558 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 1 w | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 120 v | 800 mA | 100NA (ICBO) | PNP | 1v @ 50 mA, 500 mA | 120 @ 100 mA, 5V | 120 MHz | ||||||||||||||||||||||||||||
![]() | FMG2G300US60 | - - - | ![]() | 5459 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-ia | 892 w | Standard | 19 Uhr-ia | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 10 | Halbbrücke | - - - | 600 V | 300 a | 2,7 V @ 15V, 300A | 250 µA | NEIN | |||||||||||||||||||||||||||
![]() | KSH127TM | 1.0000 | ![]() | 4312 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH12 | 1,75 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.500 | 100 v | 8 a | 10 µA | PNP - Darlington | 4v @ 80 Ma, 8a | 1000 @ 4a, 4V | - - - | |||||||||||||||||||||||||
![]() | FJN3310RBU | 1.0000 | ![]() | 2532 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | Fjn331 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 40 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 250 MHz | 10 Kohms | |||||||||||||||||||||||||||
![]() | FDP8441 | 1.6100 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 187 | N-Kanal | 40 v | 23a (TA), 80A (TC) | 10V | 2,7 MOHM @ 80A, 10V | 4v @ 250 ähm | 280 nc @ 10 v | ± 20 V | 15000 PF @ 25 V. | - - - | 300 W (TC) | |||||||||||||||||||||||||
![]() | FQB34N20TM | 2.5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1.600 | N-Kanal | 200 v | 31a (TC) | 10V | 75mohm @ 15.5a, 10V | 5 V @ 250 ähm | 78 NC @ 10 V | ± 30 v | 3100 PF @ 25 V. | - - - | 3.13W (TA), 180 W (TC) | ||||||||||||||||||||||
![]() | ISL9N307As3st | - - - | ![]() | 2686 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 67 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 7mohm @ 75a, 10V | 3v @ 250 ähm | 75 NC @ 10 V | ± 20 V | 3000 PF @ 15 V | - - - | 100 w (ta) | ||||||||||||||||||||||
![]() | J270 | 0,2300 | ![]() | 32 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | P-Kanal | - - - | 30 v | 2 ma @ 15 v | 500 mV @ 1 na | ||||||||||||||||||||||||||||||
![]() | HUF76645S3S | 2.0200 | ![]() | 3766 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5 | N-Kanal | 100 v | 75a (TC) | 4,5 V, 10 V. | 14mohm @ 75a, 10V | 3v @ 250 ähm | 153 NC @ 10 V | ± 16 v | 4400 PF @ 25 V. | - - - | 310W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus