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E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | RM4N650T2 | 0,4500 | ![]() | 6988 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM4N650T2 | 8541.10.0080 | 5.000 | N-Kanal | 650 V | 4a (TC) | 10V | 1,2OHM @ 2,5a, 10 V. | 3,5 V @ 250 ähm | ± 30 v | 280 PF @ 50 V | - - - | 46W (TC) | |||||
![]() | RM11N800T2 | 1.4400 | ![]() | 7116 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM11N800T2 | 8541.10.0080 | 5.000 | N-Kanal | 800 V | 11a (TC) | 10V | 420mohm @ 5,5a, 10V | 4v @ 250 ähm | ± 30 v | 2600 PF @ 50 V | - - - | 188W (TC) | |||||
![]() | RM8N650LD | 0,5200 | ![]() | 4458 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM8N650LDTR | 8541.10.0080 | 25.000 | N-Kanal | 650 V | 8a (TC) | 10V | 540Mohm @ 4a, 10V | 3,5 V @ 250 ähm | ± 30 v | 680 PF @ 50 V | - - - | 80W (TC) | |||||
![]() | RM6602 | 0,1300 | ![]() | 9658 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | RM660 | MOSFET (Metalloxid) | 1.2W (TA) | TSOT-23-6L | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM6602TR | 8541.10.0080 | 30.000 | N und p-kanal | 30V | 3,5a (TA), 2,7a (TA) | 58mohm @ 3,5a, 10 V, 100MOHM @ 2,7a, 10 V | 2,2 V bei 250 UA, 2,5 V @ 250 µA | 5nc @ 10v | 210pf @ 15V, 199pf @ 15V | - - - | |||||
![]() | RM4P30S6 | 0,0520 | ![]() | 2091 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 | MOSFET (Metalloxid) | SOT-23-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM4P30S6TR | 8541.10.0080 | 30.000 | P-Kanal | 30 v | 4.2a (TA) | 2,5 V, 10 V. | 55mohm @ 4.2a, 10V | 1,3 V @ 250 ähm | ± 12 V | 880 PF @ 15 V | - - - | 1.2W (TA) | |||||
![]() | RM15P55LD | 0,2800 | ![]() | 7424 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM15P55LDTR | 8541.10.0080 | 25.000 | P-Kanal | 55 v | 15a (TC) | 10V | 75mohm @ 5a, 10V | 3,5 V @ 250 ähm | ± 20 V | 1450 PF @ 20 V | - - - | 35W (TC) | |||||
![]() | RM6N800LD | 0,7000 | ![]() | 3906 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM6N800LDTR | 8541.10.0080 | 25.000 | N-Kanal | 800 V | 6a (TC) | 10V | 900mohm @ 4a, 10V | 4v @ 250 ähm | ± 30 v | 1290 PF @ 50 V | - - - | 98W (TC) | |||||
![]() | RM50N200T2 | 1.2200 | ![]() | 3702 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM50N200T2 | 8541.10.0080 | 5.000 | N-Kanal | 200 v | 51a (TC) | 10V | 32mohm @ 10a, 10V | 4v @ 250 ähm | ± 20 V | 1598 PF @ 100 V | - - - | 214W (TC) | |||||
![]() | RM4N650LD | 0,3300 | ![]() | 3330 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM4N650LDTR | 8541.10.0080 | 25.000 | N-Kanal | 650 V | 4a (TC) | 10V | 1,2OHM @ 2,5a, 10 V. | 3,5 V @ 250 ähm | ± 30 v | 280 PF @ 50 V | - - - | 46W (TC) | |||||
![]() | RM2020ES9 | 0,0550 | ![]() | 9570 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | RM2020 | MOSFET (Metalloxid) | 150 MW (TA), 800 MW (TA) | SOT-363-6L | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM2020es9tr | 8541.10.0080 | 30.000 | N und p-kanal | 20V | 750 Ma (TA), 800 Ma (TA) | 1,2OHM @ 500 mA, 4,5 V, 380 MOHM @ 650 Ma, 4,5 V. | 1 V @ 250 UA, 1,1 V @ 250 µA | 0,0018nc @ 10v, 0,75nc @ 4,5 V. | 87pf @ 10v, 120pf @ 16v | - - - | |||||
![]() | RM100N60T2 | 0,3500 | ![]() | 6793 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM100N60T2TR | 8541.10.0080 | 4.000 | N-Kanal | 60 v | 100a (TC) | 10V | 6,5 MOHM @ 40A, 10V | 4v @ 250 ähm | ± 20 V | 4800 PF @ 30 V | - - - | 170W (TC) | |||||
![]() | RM3401 | 0,0440 | ![]() | 3553 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM3401TR | 8541.10.0080 | 30.000 | P-Kanal | 30 v | 4.2a (TA) | 2,5 V, 10 V. | 55mohm @ 4.2a, 10V | 1,3 V @ 250 ähm | ± 12 V | 880 PF @ 15 V | - - - | 1.2W (TA) | |||||
![]() | RM830 | 0,2400 | ![]() | 2168 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM830 | 8541.10.0080 | 5.000 | N-Kanal | 500 V | 5a (TC) | 10V | 1,4OHM @ 2,5a, 10 V. | 4v @ 250 ähm | ± 30 v | 900 PF @ 25 V. | - - - | 87,5W (TC) | |||||
![]() | RM3N700S4 | 0,2900 | ![]() | 2302 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-3 | MOSFET (Metalloxid) | SOT-223-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM3N700S4TR | 8541.10.0080 | 30.000 | N-Kanal | 700 V | 3a (TC) | 10V | 1,5OHM @ 1,5A, 10 V. | 4v @ 250 ähm | ± 20 V | 225 PF @ 100 V | - - - | 6.2W (TC) | |||||
![]() | Rmd7n40dn | 0,2400 | ![]() | 1566 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | Rmd7n | MOSFET (Metalloxid) | 1,9W (TA), 12W (TC) | 8-DFN (3x3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RMD7N40DNTR | 8541.10.0080 | 25.000 | 2 n-kanal (dual) | 40V | 7a (ta), 20a (TC) | 20mohm @ 7a, 10V | 3v @ 250 ähm | 11nc @ 10v | 720PF @ 20V | - - - | |||||
![]() | RM80N60LD | 0,3100 | ![]() | 7058 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM80N60LDTR | 8541.10.0080 | 25.000 | N-Kanal | 60 v | 80A (TC) | 10V | 8.5Mohm @ 20a, 10V | 4v @ 250 ähm | ± 20 V | 4000 PF @ 30 V | - - - | 110W (TC) | |||||
![]() | RM2309E | 0,0540 | ![]() | 4943 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM2309etr | 8541.10.0080 | 30.000 | P-Kanal | 30 v | - - - | 4,5 V, 10 V. | 38mohm @ 1a, 10V | 2,5 V @ 250 ähm | ± 20 V | - - - | - - - | ||||||
![]() | RM30P55LD | 0,3300 | ![]() | 9543 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM30P55LDTR | 8541.10.0080 | 25.000 | P-Kanal | 55 v | 30a (TC) | 10V | 40mohm @ 15a, 10V | 4v @ 250 ähm | ± 20 V | 3500 PF @ 30 V | - - - | 65W (TC) | |||||
![]() | RM24N200TI | 0,4400 | ![]() | 3535 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM24N200TI | 8541.10.0080 | 5.000 | N-Kanal | 220 V | 24a (ta) | 10V | 80MOHM @ 15a, 10V | 2,5 V @ 250 ähm | ± 20 V | 4200 PF @ 25 V. | - - - | 45W (TA) | |||||
![]() | RM3010 | 0,1300 | ![]() | 6757 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-Sop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM3010TR | 8541.10.0080 | 40.000 | N-Kanal | 30 v | 10a (ta) | 4,5 V, 10 V. | 12mohm @ 10a, 10V | 3v @ 250 ähm | ± 20 V | 1550 PF @ 15 V | - - - | 2,5 W (TA) | |||||
![]() | RM3401y | 0,0460 | ![]() | 5047 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM3401Ytr | 8541.10.0080 | 30.000 | P-Kanal | 30 v | 4.2a (TA) | 2,5 V, 10 V. | 55mohm @ 4.2a, 10V | 1,3 V @ 250 ähm | ± 12 V | 880 PF @ 15 V | - - - | 1.2W (TA) | |||||
![]() | RM5N800TI | 0,6700 | ![]() | 6037 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM5N800TI | 8541.10.0080 | 5.000 | N-Kanal | 800 V | 5a (TC) | 10V | 1,2OHM @ 2a, 10V | 4,5 V @ 250 ähm | ± 30 v | 1320 PF @ 50 V | - - - | 32.4W (TC) | |||||
![]() | RM150N100T2 | 0,8400 | ![]() | 2825 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM150N100T2 | 8541.10.0080 | 5.000 | N-Kanal | 100 v | 150a (TC) | 10V | 4.2mohm @ 70a, 10 V. | 4v @ 250 ähm | +20V, -12v | 6680 PF @ 50 V | - - - | 275W (TC) | |||||
![]() | RM2308 | 0,0690 | ![]() | 1219 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM2308TR | 8541.10.0080 | 30.000 | N-Kanal | 60 v | 3a (ta) | 4,5 V, 10 V. | 105mohm @ 3a, 10V | 1,9 V @ 250 ähm | ± 20 V | 247 PF @ 30 V | - - - | 1.7W (TA) | |||||
![]() | RM80N30DN | 0,2900 | ![]() | 6630 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-PPAK (3x3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM80N30DNTR | 8541.10.0080 | 25.000 | N-Kanal | 30 v | 80A (TC) | 4,5 V, 10 V. | 3,8 MOHM @ 24A, 10V | 2,5 V @ 250 ähm | ± 20 V | 3190 PF @ 25 V. | - - - | 66W (TC) | |||||
![]() | RM35P100T2 | 0,4700 | ![]() | 6451 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM35P100T2 | 8541.10.0080 | 5.000 | P-Kanal | 100 v | 35a (TC) | 4,5 V, 10 V. | 50mohm @ 10a, 10V | 2,5 V @ 250 ähm | ± 20 V | 6516 PF @ 25 V. | - - - | 104W (TC) | |||||
![]() | RM4N650IP | 0,3300 | ![]() | 6734 | 0.00000000 | Rectron USA | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-251-3 Stub Leads, ipak | MOSFET (Metalloxid) | To-251 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM4N650IP | 8541.10.0080 | 4.000 | N-Kanal | 650 V | 4a (TC) | 10V | 1,2OHM @ 2,5a, 10 V. | 3,5 V @ 250 ähm | ± 30 v | 280 PF @ 50 V | - - - | 46W (TC) | |||||
![]() | RM5A1P30S6 | 0,0760 | ![]() | 4647 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 | MOSFET (Metalloxid) | SOT-23-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM5A1P30S6TR | 8541.10.0080 | 30.000 | P-Kanal | 30 v | 5.1a (ta) | 4,5 V, 10 V. | 32mohm @ 4a, 10V | 2,2 V @ 250 ähm | ± 20 V | 1280 PF @ 15 V | - - - | 1,56W (TA) | |||||
![]() | RM9926 | 0,0840 | ![]() | 7144 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | RM99 | MOSFET (Metalloxid) | 1,25W (TA) | 8-Sop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM9926TR | 8541.10.0080 | 40.000 | 2 n-kanal (dual) | 20V | 6a (ta) | 28mohm @ 6a, 4,5 V. | 1,2 V @ 250 ähm | 10nc @ 4,5 V | 640PF @ 10V | - - - | |||||
![]() | RM40P07 | 0,1450 | ![]() | 3800 | 0.00000000 | Rectron USA | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-Sop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2516-RM40P07TR | 8541.10.0080 | 40.000 | P-Kanal | 40 v | 6.2a (ta) | 4,5 V, 10 V. | 25mohm @ 5a, 10V | 2,5 V @ 250 ähm | ± 20 V | 1750 PF @ 20 V | - - - | 2,5 W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus