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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max)
G3R20MT17N GeneSiC Semiconductor G3R20MT17N 135.4600
RFQ
 ECAD 47 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc G3R20 Sicfet (Silziumkarbid) SOT-227 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R20MT17N Ear99 8541.29.0095 10 N-Kanal 1700 v 100a (TC) 15 v 26mohm @ 75a, 15V 2,7 V @ 15ma 400 NC @ 15 V ± 15 V 10187 PF @ 1000 V. - - - 523W (TC)
GA08JT17-247 GeneSiC Semiconductor GA08JT17-247 - - -
RFQ
 ECAD 7236 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1700 v 8A (TC) (90 ° C) - - - 250mohm @ 8a - - - - - - - - - 48W (TC)
G2R120MT33J GeneSiC Semiconductor G2R120MT33J 108.0300
RFQ
 ECAD 1567 0.00000000 Genesic Semiconductor G2R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G2R120 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G2R120MT33J Ear99 8541.29.0095 50 N-Kanal 3300 v 35a 20V 156mohm @ 20a, 20V - - - 145 NC @ 20 V +25 V, -10 V 3706 PF @ 1000 V. - - - - - -
GA03JT12-247 GeneSiC Semiconductor GA03JT12-247 - - -
RFQ
 ECAD 8291 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1200 V 3a (TC) (95 ° C) - - - 460Mohm @ 3a - - - - - - - - - 15W (TC)
G3R60MT07J GeneSiC Semiconductor G3R60MT07J 10.7000
RFQ
 ECAD 1 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv - - - Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen 1242-G3R60MT07J Ear99 8541.29.0095 50 - - - 750 V - - - - - - - - - - - - +20V, -10 V. - - - - - -
G3R75MT12K GeneSiC Semiconductor G3R75MT12K 10.7700
RFQ
 ECAD 1 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R75 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R75MT12K Ear99 8541.29.0095 30 N-Kanal 1200 V 41a (TC) 15 v 90 MOHM @ 20A, 15 V 2,69 V @ 7,5 mA 54 NC @ 15 V ± 15 V 1560 PF @ 800 V - - - 207W (TC)
GA20SICP12-247 GeneSiC Semiconductor GA20SICP12-247 - - -
RFQ
 ECAD 4247 0.00000000 Genesic Semiconductor - - - Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen 1 (unbegrenzt) Ear99 8541.29.0095 50 - - - 1200 V 45a (TC) - - - 50mohm @ 20a - - - - - - 3091 PF @ 800 V - - - 282W (TC)
G3R160MT17D GeneSiC Semiconductor G3R160MT17D 12.2400
RFQ
 ECAD 9458 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 G3R160 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R160MT17D Ear99 8541.29.0095 30 N-Kanal 1700 v 21a (TC) 15 v 208mohm @ 12a, 15V 2,7 V @ 5ma 51 NC @ 15 V ± 15 V 1272 PF @ 1000 V - - - 175W (TC)
G3R45MT17K GeneSiC Semiconductor G3R45MT17K 33.0700
RFQ
 ECAD 900 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R45 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R45MT17K Ear99 8541.29.0095 30 N-Kanal 1700 v 61a (TC) 15 v 58mohm @ 40a, 15V 2,7 V @ 8ma 182 NC @ 15 V ± 15 V 4523 PF @ 1000 V - - - 438W (TC)
G2R50MT33K GeneSiC Semiconductor G2R50MT33K 295.6700
RFQ
 ECAD 78 0.00000000 Genesic Semiconductor G2R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G2R50MT33K Ear99 8541.29.0095 30 N-Kanal 3300 v 63a (TC) 20V 50mohm @ 40a, 20V 3,5 V @ 10 Ma (Typ) 340 NC @ 20 V +25 V, -10 V 7301 PF @ 1000 V Standard 536W (TC)
2N7640-GA GeneSiC Semiconductor 2N7640-ga - - -
RFQ
 ECAD 5917 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) Oberflächenhalterung To-276aa Sic (Silicon Carbid Junction Transistor) To-276 - - - Rohs Nick Konform 1 (unbegrenzt) 1242-1151 Ear99 8541.29.0095 10 - - - 650 V 16a (TC) (155 ° C) - - - 105mohm @ 16a - - - - - - 1534 PF @ 35 V - - - 330W (TC)
GA50JT12-247 GeneSiC Semiconductor GA50JT12-247 - - -
RFQ
 ECAD 1823 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1200 V 100a (TC) - - - 25mohm @ 50a - - - - - - 7209 PF @ 800 V - - - 583W (TC)
G2R1000MT17D GeneSiC Semiconductor G2R1000MT17D 5.4400
RFQ
 ECAD 717 0.00000000 Genesic Semiconductor G2R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 G2R1000 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G2R1000MT17D Ear99 8541.29.0095 30 N-Kanal 1700 v 5a (TC) 20V 1,2OHM @ 2a, 20V 5,5 V @ 500 ähm 11 NC @ 20 V +25 V, -10 V 111 PF @ 1000 V - - - 44W (TC)
GA20JT12-247 GeneSiC Semiconductor GA20JT12-247 - - -
RFQ
 ECAD 9649 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1200 V 20A (TC) - - - 70 Mohm @ 20a - - - - - - - - - 282W (TC)
2N7638-GA GeneSiC Semiconductor 2N7638-ga - - -
RFQ
 ECAD 2645 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) Oberflächenhalterung To-276aa Sic (Silicon Carbid Junction Transistor) To-276 Herunterladen Rohs Nick Konform 1 (unbegrenzt) 1242-1149 Ear99 8541.29.0095 10 - - - 650 V 8A (TC) (158 ° C) - - - 170Mohm @ 8a - - - - - - 720 PF @ 35 V - - - 200W (TC)
G3R40MT12K GeneSiC Semiconductor G3R40MT12K 17.6700
RFQ
 ECAD 4250 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R40 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R40MT12K Ear99 8541.29.0095 30 N-Kanal 1200 V 71a (TC) 15 v 48mohm @ 35a, 15V 2,69 V @ 10 mA 106 NC @ 15 V ± 15 V 2929 PF @ 800 V - - - 333W (TC)
GA05JT03-46 GeneSiC Semiconductor GA05JT03-46 - - -
RFQ
 ECAD 4907 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) K. Loch To-46-3 GA05JT03 Sic (Silicon Carbid Junction Transistor) To-46 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-1252 Ear99 8541.29.0095 200 - - - 300 V 9a (TC) - - - 240mohm @ 5a - - - - - - - - - 20W (TC)
2N7637-GA GeneSiC Semiconductor 2N7637-Ga - - -
RFQ
 ECAD 1163 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) K. Loch To-257-3 Sic (Silicon Carbid Junction Transistor) To-257 - - - Rohs Nick Konform 1 (unbegrenzt) 1242-1148 Ear99 8541.29.0095 10 - - - 650 V 7A (TC) (165 ° C) - - - 170Mohm @ 7a - - - - - - 720 PF @ 35 V - - - 80W (TC)
G3R60MT07K GeneSiC Semiconductor G3R60MT07K 10.4000
RFQ
 ECAD 2 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv - - - K. Loch To-247-4 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen 1242-G3R60MT07K Ear99 8541.29.0095 30 - - - 750 V - - - - - - - - - - - - +20V, -10 V. - - - - - -
GA16JT17-247 GeneSiC Semiconductor GA16JT17-247 - - -
RFQ
 ECAD 9298 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1700 v 16A (TC) (90 ° C) - - - 110Mohm @ 16a - - - - - - - - - 282W (TC)
G3R12MT12K GeneSiC Semiconductor G3R12MT12K 69.1800
RFQ
 ECAD 8861 0.00000000 Genesic Semiconductor - - - Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R12m Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R12MT12K Ear99 8541.29.0095 30 N-Kanal 1200 V 157a (TC) 15 V, 18 V. 13mohm @ 100a, 18 V. 2,7 V @ 50 Ma 288 NC @ 15 V +22V, -10 V. 9335 PF @ 800 V - - - 567W (TC)
GA100SCPL12-227E GeneSiC Semiconductor GA100SCPL12-227E - - -
RFQ
 ECAD 2987 0.00000000 Genesic Semiconductor - - - Rohr Veraltet - - - - - - - - - GA100 - - - - - - - - - - - - 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 10 - - - - - - - - - - - - - - - - - - - - - - - -
G3R45MT17D GeneSiC Semiconductor G3R45MT17D 32.7300
RFQ
 ECAD 4427 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 G3R45 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R45MT17D Ear99 8541.29.0095 30 N-Kanal 1700 v 61a (TC) 15 v 58mohm @ 40a, 15V 2,7 V @ 8ma 182 NC @ 15 V ± 15 V 4523 PF @ 1000 V - - - 438W (TC)
GA100JT17-227 GeneSiC Semiconductor GA100JT17-227 - - -
RFQ
 ECAD 8479 0.00000000 Genesic Semiconductor - - - Rohr Veraltet -55 ° C ~ 175 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc Sic (Silicon Carbid Junction Transistor) SOT-227 Herunterladen 1 (unbegrenzt) 1242-1314 Ear99 8541.29.0095 10 - - - 1700 v 160a (TC) - - - 10Mohm @ 100a - - - - - - 14400 PF @ 800 V - - - 535W (TC)
G3R40MT12D GeneSiC Semiconductor G3R40MT12D 17.4200
RFQ
 ECAD 6690 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 G3R40 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R40MT12D Ear99 8541.29.0095 30 N-Kanal 1200 V 71a (TC) 15 v 48mohm @ 35a, 15V 2,69 V @ 10 mA 106 NC @ 15 V ± 15 V 2929 PF @ 800 V - - - 333W (TC)
G3R160MT12D GeneSiC Semiconductor G3R160MT12D 6.5200
RFQ
 ECAD 8130 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 G3R160 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R160MT12D Ear99 8541.29.0095 30 N-Kanal 1200 V 22a (TC) 15 v 192mohm @ 10a, 15V 2,69v @ 5ma 28 NC @ 15 V ± 15 V 730 PF @ 800 V - - - 123W (TC)
G3R40MT12J GeneSiC Semiconductor G3R40MT12J 17.9800
RFQ
 ECAD 39 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G3R40 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R40MT12J Ear99 8541.29.0095 50 N-Kanal 1200 V 75a (TC) 15 v 48mohm @ 35a, 15V 2,69 V @ 10 mA 106 NC @ 15 V ± 15 V 2929 PF @ 800 V - - - 374W (TC)
GA04JT17-247 GeneSiC Semiconductor GA04JT17-247 - - -
RFQ
 ECAD 7798 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1700 v 4a (TC) (95 ° C) - - - 480Mohm @ 4a - - - - - - - - - 106W (TC)
GA10JT12-247 GeneSiC Semiconductor GA10JT12-247 - - -
RFQ
 ECAD 9924 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1200 V 10a (TC) - - - 140Mohm @ 10a - - - - - - - - - 170W (TC)
G3R30MT12J GeneSiC Semiconductor G3R30MT12J 22.8300
RFQ
 ECAD 489 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G3R30 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R30MT12J Ear99 8541.29.0095 50 N-Kanal 1200 V 96a (TC) 15 v 36mohm @ 50a, 15V 2,69 V @ 12 Ma 155 NC @ 15 V ± 15 V 3901 PF @ 800 V - - - 459W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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