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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket FET -Typ Testedingung ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Reverse Recovery Time (TRR) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C
G3R450MT17J GeneSiC Semiconductor G3R450MT17J 8.0400
RFQ
 ECAD 7 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G3R450 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R450MT17J Ear99 8541.29.0095 50 N-Kanal 1700 v 9a (TC) 15 v 585mohm @ 4a, 15 V 2,7 V @ 2MA 18 NC @ 15 V ± 15 V 454 PF @ 1000 V - - - 91W (TC)
2N7639-GA GeneSiC Semiconductor 2N7639-ga - - -
RFQ
 ECAD 7360 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) K. Loch To-257-3 Sic (Silicon Carbid Junction Transistor) To-257 Herunterladen Rohs Nick Konform 1 (unbegrenzt) 1242-1150 Ear99 8541.29.0095 10 - - - 650 V 15a (TC) (155 ° C) - - - 105mohm @ 15a - - - - - - 1534 PF @ 35 V - - - 172W (TC)
2N7635-GA GeneSiC Semiconductor 2N7635-ga - - -
RFQ
 ECAD 9225 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) K. Loch To-257-3 Sic (Silicon Carbid Junction Transistor) To-257 - - - Rohs Nick Konform 1 (unbegrenzt) 1242-1146 Ear99 8541.29.0095 10 - - - 650 V 4a (TC) (165 ° C) - - - 415Mohm @ 4a - - - - - - 324 PF @ 35 V - - - 47W (TC)
GA35XCP12-247 GeneSiC Semiconductor GA35XCP12-247 - - -
RFQ
 ECAD 7101 0.00000000 Genesic Semiconductor - - - Rohr Veraltet -40 ° C ~ 150 ° C (TJ) K. Loch To-247-3 Standard To-247ab Herunterladen 1 (unbegrenzt) 1242-1141 Ear99 8541.29.0095 30 800 V, 35a, 22 Ohm, 15 V 36 ns Pt 1200 V 35 a 3v @ 15V, 35a 2,66MJ (EIN), 4,35 MJ (AUS) 50 nc - - -
G3R75MT12J GeneSiC Semiconductor G3R75MT12J 11.0300
RFQ
 ECAD 9581 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G3R75 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R75MT12J Ear99 8541.29.0095 50 N-Kanal 1200 V 42a (TC) 15 v 90 MOHM @ 20A, 15 V 2,69 V @ 7,5 mA 54 NC @ 15 V ± 15 V 1560 PF @ 800 V - - - 224W (TC)
G3R160MT17J GeneSiC Semiconductor G3R160MT17J 12.9800
RFQ
 ECAD 1161 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G3R160 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R160MT17J Ear99 8541.29.0095 50 N-Kanal 1700 v 22a (TC) 15 v 208mohm @ 12a, 15V 2,7 V @ 5ma 51 NC @ 15 V ± 15 V 1272 PF @ 1000 V - - - 187W (TC)
G3R75MT12D GeneSiC Semiconductor G3R75MT12D 10.5000
RFQ
 ECAD 3 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 G3R75 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R75MT12D Ear99 8541.29.0095 30 N-Kanal 1200 V 41a (TC) 15 v 90 MOHM @ 20A, 15 V 2,69 V @ 7,5 mA 54 NC @ 15 V ± 15 V 1560 PF @ 800 V - - - 207W (TC)
G3R350MT12D GeneSiC Semiconductor G3R350MT12D 4.7400
RFQ
 ECAD 3 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 G3R350 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R350MT12D Ear99 8541.29.0095 30 N-Kanal 1200 V 11a (TC) 15 v 420mohm @ 4a, 15V 2,69V @ 2MA 12 NC @ 15 V ± 15 V 334 PF @ 800 V - - - 74W (TC)
GA10SICP12-263 GeneSiC Semiconductor GA10SICP12-263 29.3250
RFQ
 ECAD 9279 0.00000000 Genesic Semiconductor - - - Rohr Aktiv 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca GA10sicp12 Sic (Silicon Carbid Junction Transistor) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 50 - - - 1200 V 25a (TC) - - - 100mohm @ 10a - - - - - - 1403 PF @ 800 V - - - 170W (TC)
GA50JT17-247 GeneSiC Semiconductor GA50JT17-247 - - -
RFQ
 ECAD 5672 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247 Herunterladen 1 (unbegrenzt) 1242-1247 Ear99 8541.29.0095 30 - - - 1700 v 100a (TC) - - - 25mohm @ 50a - - - - - - - - - 583W (TC)
GA20JT12-263 GeneSiC Semiconductor GA20JT12-263 36.7400
RFQ
 ECAD 4850 0.00000000 Genesic Semiconductor - - - Rohr Aktiv 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca GA20JT12 Sic (Silicon Carbid Junction Transistor) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 50 - - - 1200 V 45a (TC) - - - 60MOHM @ 20A - - - - - - 3091 PF @ 800 V - - - 282W (TC)
GA05JT01-46 GeneSiC Semiconductor GA05JT01-46 - - -
RFQ
 ECAD 7264 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) K. Loch To-46-3 Sic (Silicon Carbid Junction Transistor) To-46 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-1251 Ear99 8541.29.0095 200 - - - 100 v 9a (TC) - - - 240mohm @ 5a - - - - - - - - - 20W (TC)
G3R20MT17K GeneSiC Semiconductor G3R20MT17K 107.2000
RFQ
 ECAD 4 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R20 Sicfet (Silziumkarbid) To-247-4 - - - ROHS -KONFORM 1 (unbegrenzt) 1242-G3R20MT17K Ear99 8541.29.0095 30 N-Kanal 1700 v 124a (TC) 15 v 26mohm @ 75a, 15V 2,7 V @ 15ma 400 NC @ 15 V ± 15 V 10187 PF @ 1000 V. - - - 809W (TC)
G3R20MT12K GeneSiC Semiconductor G3R20MT12K 36.0900
RFQ
 ECAD 3655 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R20 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R20MT12K Ear99 8541.29.0095 30 N-Kanal 1200 V 128a (TC) 15 v 24MOHM @ 60A, 15V 2,69 V @ 15ma 219 NC @ 15 V ± 15 V 5873 PF @ 800 V - - - 542W (TC)
G2R1000MT33J GeneSiC Semiconductor G2R1000MT33J 18.6900
RFQ
 ECAD 1 0.00000000 Genesic Semiconductor G2R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G2R1000 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G2R1000MT33J Ear99 8541.29.0095 50 N-Kanal 3300 v 4a (TC) 20V 1,2OHM @ 2a, 20V 3,5 V @ 2MA 21 NC @ 20 V +20V, -5 V. 238 PF @ 1000 V - - - 74W (TC)
GA10JT12-263 GeneSiC Semiconductor GA10JT12-263 - - -
RFQ
 ECAD 5630 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) Oberflächenhalterung - - - GA10JT12 Sic (Silicon Carbid Junction Transistor) - - - Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 50 - - - 1200 V 25a (TC) - - - 120Mohm @ 10a - - - - - - 1403 PF @ 800 V - - - 170W (TC)
GA50JT06-258 GeneSiC Semiconductor GA50JT06-258 625.7790
RFQ
 ECAD 9468 0.00000000 Genesic Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 225 ° C (TJ) K. Loch To-258-3, to-258aa GA50JT06 Sic (Silicon Carbid Junction Transistor) To-258 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-1253 Ear99 8541.29.0095 10 - - - 600 V 100a (TC) - - - 25mohm @ 50a - - - - - - - - - 769W (TC)
G3R30MT12K GeneSiC Semiconductor G3R30MT12K 22.5300
RFQ
 ECAD 844 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R30 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R30MT12K Ear99 8541.29.0095 30 N-Kanal 1200 V 90a (TC) 15 v 36mohm @ 50a, 15V 2,69 V @ 12 Ma 155 NC @ 15 V ± 15 V 3901 PF @ 800 V - - - 400W (TC)
G3R350MT12J GeneSiC Semiconductor G3R350MT12J 5.5100
RFQ
 ECAD 5 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G3R350 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R350MT12J Ear99 8541.29.0095 50 N-Kanal 1200 V 11a (TC) 15 v 420mohm @ 4a, 15V 2,69V @ 2MA 12 NC @ 15 V ± 15 V 334 PF @ 800 V - - - 75W (TC)
GA05JT12-247 GeneSiC Semiconductor GA05JT12-247 - - -
RFQ
 ECAD 1135 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab - - - 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1200 V 5a (TC) - - - 280Mohm @ 5a - - - - - - - - - 106W (TC)
G2R1000MT17J GeneSiC Semiconductor G2R1000MT17J 6.4400
RFQ
 ECAD 14 0.00000000 Genesic Semiconductor G2R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G2R1000 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G2R1000MT17J Ear99 8541.29.0095 50 N-Kanal 1700 v 3a (TC) 20V 1,2OHM @ 2a, 20V 4V @ 2MA +20V, -10 V. 139 PF @ 1000 V - - - 54W (TC)
GA06JT12-247 GeneSiC Semiconductor GA06JT12-247 - - -
RFQ
 ECAD 6492 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1200 V 6a (TC) (90 ° C) - - - 220mohm @ 6a - - - - - - - - - - - -
G2R120MT33J GeneSiC Semiconductor G2R120MT33J 108.0300
RFQ
 ECAD 1567 0.00000000 Genesic Semiconductor G2R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca G2R120 Sicfet (Silziumkarbid) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G2R120MT33J Ear99 8541.29.0095 50 N-Kanal 3300 v 35a 20V 156mohm @ 20a, 20V - - - 145 NC @ 20 V +25 V, -10 V 3706 PF @ 1000 V. - - - - - -
GA100JT12-227 GeneSiC Semiconductor GA100JT12-227 - - -
RFQ
 ECAD 2862 0.00000000 Genesic Semiconductor - - - Rohr Veraltet -55 ° C ~ 175 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc Sic (Silicon Carbid Junction Transistor) SOT-227 Herunterladen 1 (unbegrenzt) Ear99 8541.29.0095 10 - - - 1200 V 160a (TC) - - - 10Mohm @ 100a - - - - - - 14400 PF @ 800 V - - - 535W (TC)
GA50JT12-247 GeneSiC Semiconductor GA50JT12-247 - - -
RFQ
 ECAD 1823 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) K. Loch To-247-3 Sic (Silicon Carbid Junction Transistor) To-247ab Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 30 - - - 1200 V 100a (TC) - - - 25mohm @ 50a - - - - - - 7209 PF @ 800 V - - - 583W (TC)
2N7636-GA GeneSiC Semiconductor 2N7636-ga - - -
RFQ
 ECAD 8687 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) Oberflächenhalterung To-276aa Sic (Silicon Carbid Junction Transistor) To-276 - - - Rohs Nick Konform 1 (unbegrenzt) 1242-1147 Ear99 8541.29.0095 10 - - - 650 V 4a (TC) (165 ° C) - - - 415Mohm @ 4a - - - - - - 324 PF @ 35 V - - - 125W (TC)
2N7640-GA GeneSiC Semiconductor 2N7640-ga - - -
RFQ
 ECAD 5917 0.00000000 Genesic Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 225 ° C (TJ) Oberflächenhalterung To-276aa Sic (Silicon Carbid Junction Transistor) To-276 - - - Rohs Nick Konform 1 (unbegrenzt) 1242-1151 Ear99 8541.29.0095 10 - - - 650 V 16a (TC) (155 ° C) - - - 105mohm @ 16a - - - - - - 1534 PF @ 35 V - - - 330W (TC)
G3R60MT07D GeneSiC Semiconductor G3R60MT07D 10.1400
RFQ
 ECAD 1 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv - - - K. Loch To-247-3 Sicfet (Silziumkarbid) To-247-3 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen 1242-G3R60MT07D Ear99 8541.29.0095 30 - - - 750 V - - - - - - - - - - - - +20V, -10 V. - - - - - -
G3R45MT17K GeneSiC Semiconductor G3R45MT17K 33.0700
RFQ
 ECAD 900 0.00000000 Genesic Semiconductor G3R ™ Rohr Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-4 G3R45 Sicfet (Silziumkarbid) To-247-4 Herunterladen ROHS -KONFORM 1 (unbegrenzt) 1242-G3R45MT17K Ear99 8541.29.0095 30 N-Kanal 1700 v 61a (TC) 15 v 58mohm @ 40a, 15V 2,7 V @ 8ma 182 NC @ 15 V ± 15 V 4523 PF @ 1000 V - - - 438W (TC)
GA05JT12-263 GeneSiC Semiconductor GA05JT12-263 - - -
RFQ
 ECAD 4245 0.00000000 Genesic Semiconductor - - - Rohr Veraltet 175 ° C (TJ) Oberflächenhalterung To-263-8, d²pak (7 Leitungen + Tab), to-263ca GA05JT12 Sic (Silicon Carbid Junction Transistor) To-263-7 Herunterladen ROHS -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 50 - - - 1200 V 15a (TC) - - - - - - - - - - - - - - - 106W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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