Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce |
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![]() | VS-GT105LA120UX | - - - | ![]() | 3465 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Rohr | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | SOT-227-4, MiniBloc | GT105 | 463 w | Standard | SOT-227 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 160 | Einzel | Npt | 1200 V | 134 a | 75 µA | NEIN | ||||
![]() | APTCV40H60CT1G | 79.8900 | ![]() | 3055 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp1 | Aptcv40 | 176 w | Standard | Sp1 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Volle Brucke | TRABENFELD STOPP | 600 V | 80 a | 1,9 V @ 15V, 50a | 250 µA | Ja | 3.15 NF @ 25 V. | ||
APTGF150A120TG | - - - | ![]() | 2111 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp4 | 961 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Halbbrücke | Npt | 1200 V | 200 a | 3,7 V @ 15V, 150a | 350 µA | Ja | 10.2 NF @ 25 V | ||||||
![]() | APTGF180A60TG | - - - | ![]() | 8231 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp4 | 833 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Halbbrücke | Npt | 600 V | 220 a | 2,5 V @ 15V, 180a | 300 µA | Ja | 8.6 NF @ 25 V. | |||||
![]() | APTGF180DA60TG | - - - | ![]() | 5212 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp4 | 833 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 600 V | 220 a | 2,5 V @ 15V, 180a | 300 µA | Ja | 8.6 NF @ 25 V. | |||||
APTGF180DH60G | - - - | ![]() | 2982 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp6 | 833 w | Standard | Sp6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Asymmetrische Brücke | Npt | 600 V | 220 a | 2,5 V @ 15V, 180a | 300 µA | NEIN | 8.6 NF @ 25 V. | ||||||
![]() | APTGF25X120T3G | - - - | ![]() | 7367 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | SP3 | 208 w | Standard | SP3 | Herunterladen | 1 (unbegrenzt) | APTGF25X120T3GMP-ND | Ear99 | 8541.29.0095 | 1 | Drei -Phase -wechselrichter | Npt | 1200 V | 40 a | 3,7 V @ 15V, 25a | 250 µA | Ja | 1,65 NF @ 25 V. | ||||
APTGF300A120G | - - - | ![]() | 4216 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp6 | 1780 w | Standard | Sp6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Halbbrücke | Npt | 1200 V | 400 a | 3,9 V @ 15V, 300A | 500 µA | NEIN | 21 NF @ 25 V | ||||||
APTGF350DA60G | - - - | ![]() | 8006 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp6 | 1562 w | Standard | Sp6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 600 V | 430 a | 2,5 V @ 15V, 360a | 200 µA | NEIN | 17.2 NF @ 25 V. | ||||||
APTGF350DU60G | - - - | ![]() | 9252 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp6 | 1562 w | Standard | Sp6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Dual Gemeinsame Quelle | Npt | 600 V | 430 a | 2,5 V @ 15V, 360a | 200 µA | NEIN | 17.2 NF @ 25 V. | ||||||
![]() | APTGF400U120D4G | - - - | ![]() | 7600 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | D4 | 2500 w | Standard | D4 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 1200 V | 510 a | 3,7 V @ 15V, 400a | 5 Ma | NEIN | 26 NF @ 25 V. | ||||
![]() | APTGF50TA120PG | - - - | ![]() | 3607 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp6 | 312 w | Standard | SP6-P | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | DRIPHASE | Npt | 1200 V | 75 a | 3,7 V @ 15V, 50A | 250 µA | NEIN | 3.45 NF @ 25 V. | |||||
![]() | APTGF75DA120T1G | - - - | ![]() | 6340 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp1 | 500 w | Standard | Sp1 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 1200 V | 100 a | 3,7 V @ 15V, 75a | 250 µA | Ja | 5.1 NF @ 25 V | |||||
![]() | APTGF75SK60D1G | - - - | ![]() | 6033 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | D1 | 355 w | Standard | D1 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 600 V | 100 a | 2,45 V @ 15V, 75a | 500 µA | NEIN | 3.3 NF @ 25 V | ||||
![]() | APTGF90A60D1G | - - - | ![]() | 3083 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | - - - | Chassis -berg | D1 | Standard | D1 | - - - | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Halbbrücke | Npt | - - - | NEIN | |||||||||
![]() | APTGF90DA60D1G | - - - | ![]() | 2309 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | - - - | Chassis -berg | D1 | 445 w | Standard | D1 | - - - | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 600 V | 130 a | 2,45 V @ 15V, 100a | 500 µA | NEIN | 4.3 NF @ 25 V | ||||
![]() | APTGF90DA60TG | - - - | ![]() | 8081 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | 416 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 600 V | 110 a | 2,5 V @ 15V, 90a | 250 µA | Ja | 4.3 NF @ 25 V | ||||
![]() | APTGF90DH60TG | - - - | ![]() | 3765 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | 416 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Asymmetrische Brücke | Npt | 600 V | 110 a | 2,5 V @ 15V, 90a | 250 µA | Ja | 4.3 NF @ 25 V | ||||
![]() | APTGF90SK60TG | - - - | ![]() | 9341 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | 416 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 600 V | 110 a | 2,5 V @ 15V, 90a | 250 µA | Ja | 4.3 NF @ 25 V | ||||
![]() | APTGL475DA120D3G | 250.4300 | ![]() | 1925 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | D-3-Modul | Aptgl475 | 2080 w | Standard | D3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 610 a | 2,2 V @ 15V, 400a | 5 Ma | NEIN | 24.6 NF @ 25 V. | ||
![]() | APTGL475SK120D3G | 250.4300 | ![]() | 6056 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | D-3-Modul | Aptgl475 | 2080 w | Standard | D3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 610 a | 2,2 V @ 15V, 400a | 5 Ma | NEIN | 24.6 NF @ 25 V. | ||
APTGL475U120D4G | 241.2400 | ![]() | 1430 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | D4 | Aptgl475 | 2082 w | Standard | D4 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 610 a | 2,2 V @ 15V, 400a | 4 ma | NEIN | 24.6 NF @ 25 V. | |||
![]() | APTGL700U120D4G | 303.3100 | ![]() | 4905 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | D4 | Aptgl700 | 3000 w | Standard | D4 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 910 a | 2,2 V @ 15V, 600A | 4 ma | NEIN | 37.2 NF @ 25 V. | ||
![]() | APTGT100DA60TG | - - - | ![]() | 8016 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp4 | 340 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 600 V | 150 a | 1,9 V @ 15V, 100a | 250 µA | Ja | 6.1 NF @ 25 V | ||||
![]() | APTGT100DDA60T3G | - - - | ![]() | 5509 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | SP3 | 340 w | Standard | SP3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Dual Boost Chopper | TRABENFELD STOPP | 600 V | 150 a | 1,9 V @ 15V, 100a | 250 µA | Ja | 6.1 NF @ 25 V | ||||
![]() | APTGT100DH120TG | 148.8000 | ![]() | 7769 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Aktiv | - - - | Chassis -berg | Sp4 | Aptgt100 | 480 w | Standard | Sp4 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Asymmetrische Brücke | TRABENFELD STOPP | 1200 V | 140 a | 2,1 V @ 15V, 100a | 250 µA | Ja | 7.2 NF @ 25 V | ||
![]() | APTGT150DA120D1G | - - - | ![]() | 9152 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | D1 | 700 w | Standard | D1 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 220 a | 2,1 V @ 15V, 150a | 4 ma | NEIN | 10.8 NF @ 25 V | ||||
![]() | APTGT150SK60TG | - - - | ![]() | 7485 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp4 | 480 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 600 V | 225 a | 1,9 V @ 15V, 150a | 250 µA | Ja | 9.2 NF @ 25 V. | ||||
![]() | APTGT150TA60PG | 243,8000 | ![]() | 9662 | 0.00000000 | Mikrochip -technologie | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp6 | APTGT150 | 480 w | Standard | SP6-P | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | DRIPHASE | TRABENFELD STOPP | 600 V | 225 a | 1,9 V @ 15V, 150a | 250 µA | NEIN | 9.2 NF @ 25 V. | ||
![]() | APTGT200SK60TG | - - - | ![]() | 8084 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp4 | 625 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 600 V | 290 a | 1,9 V @ 15V, 200a | 250 µA | Ja | 12.3 NF @ 25 V. |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus