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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Genehmigungsbehörde | Anzahl der Kanäle | Ausgangstyp | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Strom - Ausgang / Kanal | DatEnrate | Aufstieg / Fallzeit (Typ) | Spannung - Ausgang (max) | Spannung - Vorwärts (VF) (Typ) | Strom - DC Forward (if) (max) | Spannung - Isolation | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Strom - Hold (ih) | Eingänge - SETE 1/SETE 2 | Transiente immunität der gemeinsamen modus (min) | Ausbreitungsverzögerung TPLH / TPHL (max) | Strom Halbertragungsverhöltnis (min) | Strom Halbertragungsverhöltnis (max) | Einschalen / Ausschalten (Typ) | VCE -Sättigung (max) | NULL -KREUZungskreis | Statischer DV/DT (min) | Strom - LED -Tigger (IFT) (max) | Zeit Drehen |
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![]() | TLP531 (gr, f) | - - - | ![]() | 4494 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP531 | - - - | 1 (unbegrenzt) | 264-TLP531 (GRF) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||||||||||
![]() | TLP759 (D4FA1T1SJ, f | - - - | ![]() | 4617 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | TLP759 | DC | 1 | Transistor -MIT -Basis | 8-DIP | Herunterladen | 264-TLP759 (D4FA1T1SJF | Ear99 | 8541.49.8000 | 1 | 8ma | - - - | - - - | 1,65 v | 25 ma | 5000 VRMs | 20% @ 16 ma | - - - | - - - | - - - | ||||||||||||||||
![]() | TLP627M (TP5, e | 0,9300 | ![]() | 5883 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | TLP627 | DC | 1 | Darlington | 4-smd | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 1.500 | 150 Ma | 60 µs, 30 µs | 300 V | 1,25 V. | 50 ma | 5000 VRMs | 1000% @ 1ma | - - - | 110 µs, 30 µs | 1,2 v | ||||||||||||||||
![]() | TLP781F (D4GRF7TC, F. | - - - | ![]() | 1337 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,400 ", 10,16 mm) | TLP781f | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (D4GRF7TCF | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 300% @ 5ma | 3 µs, 3 µs | 400mV | |||||||||||||||
![]() | Tlx9185 (kmgbtl, f (o | - - - | ![]() | 5179 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLX9185 | DC | 1 | Transistor | 6-Sop | - - - | 264-TLX9185 (KMGBTLF (o | Ear99 | 8541.49.8000 | 1 | 50 ma | 3 µs, 5 µs | 80V | 1,27 v | 30 ma | 3750 VRMs | 20% @ 5ma | 600% @ 5ma | 5 µs, 5 µs | 400mV | ||||||||||||||||
![]() | TLP2719 (D4-TP, e | 1.7200 | ![]() | 773 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 100 ° C. | Oberflächenhalterung | 6-Soic (0,295 ", 7,50 mm BreiTe) | TLP2719 | DC | 1 | Offener Sammler | 4,5 V ~ 20V | 6-so | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 1.500 | 8 ma | 1MB | - - - | 1,6 v | 25ma | 5000 VRMs | 1/0 | 10kV/µs | 800 ns, 800 ns | ||||||||||||||||
![]() | TLP781 (D4-GRL, F) | - - - | ![]() | 6942 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP781 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP781 (D4-GRLF) | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 200% @ 5ma | 3 µs, 3 µs | 400mV | |||||||||||||||
![]() | Tlp734 (d4grtp5, m, f | - - - | ![]() | 5336 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP734 | - - - | 1 (unbegrenzt) | 264-TLP734 (D4GRTP5MF | Ear99 | 8541.49.8000 | 1.500 | ||||||||||||||||||||||||||||||||
![]() | TLP781F (D4YH-TP7, f | - - - | ![]() | 7445 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | TLP781f | DC | 1 | Transistor | 4-smd | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (D4YH-TP7FTR | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 75% @ 5ma | 150% @ 5ma | 3 µs, 3 µs | 400mV | |||||||||||||||
![]() | TLP781F (D4GB-TP7, f | - - - | ![]() | 6460 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | TLP781f | DC | 1 | Transistor | 4-smd | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (D4GB-TP7FTR | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | |||||||||||||||
![]() | TLP3052A (f | - - - | ![]() | 2712 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Kasten | Aktiv | -40 ° C ~ 100 ° C. | K. Loch | 0,400 ", 10,16 mm), 5 Leads | TLP3052 | CQC, CSA, CUL, UL, VDE | 1 | Triac | 6-DIP | Herunterladen | 264-TLP3052A (f | Ear99 | 8541.49.8000 | 1 | 1,15 V | 50 ma | 5000 VRMs | 600 V | 100 ma | 600 ähm | NEIN | 2kV/µs (Typ) | 10 ma | - - - | ||||||||||||||||
![]() | TLP5702H (D4, e | 1.7100 | ![]() | 2347 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,295 ", 7,50 mm BreiTe) | TLP5702 | DC | 1 | Push-Pull, Totem Pole | 10 V ~ 30 V | 6-so | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 125 | - - - | 37ns, 50 ns | 1,65 v | 20 ma | 5000 VRMs | 1/0 | 50 kV/µs | 200ns, 200ns | |||||||||||||||||
![]() | TLP120 (f) | - - - | ![]() | 4000 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd (4 Leitungen), Möwenflügel | TLP120 | AC, DC | 1 | Transistor | 6-mfsop, 4 Blei | - - - | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 50 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 50 ma | 3750 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | ||||||||||||||||
![]() | TLP627-2 (LF1, F) | - - - | ![]() | 3833 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP627 | - - - | 1 (unbegrenzt) | 264-TLP627-2 (LF1F) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||||||||||
![]() | TLP160G (OMT7-TPR, f | - - - | ![]() | 7938 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Band & Rollen (TR) | Veraltet | TLP160 | - - - | 1 (unbegrenzt) | 264-TLP160G (OMT7-TPRFTR | Ear99 | 8541.49.8000 | 3.000 | ||||||||||||||||||||||||||||||||
![]() | TLP187 (V4-TPL, e | - - - | ![]() | 8201 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLP187 | DC | 1 | Darlington | 6-Sop | - - - | 1 (unbegrenzt) | 264-TLP187 (V4-TPLETRRETR | Ear99 | 8541.49.8000 | 3.000 | 150 Ma | 40 µs, 15 µs | 300 V | 1,25 V. | 50 ma | 3750 VRMs | 1000% @ 1ma | - - - | 50 µs, 15 µs | 1,2 v | |||||||||||||||
TLP2362 (TPR, e | 1.0500 | ![]() | 8277 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2362 | DC | 1 | Offener Sammler | 2,7 V ~ 5,5 V. | 6-so, 5 Blei | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 3.000 | 25 ma | 10 MB | 30ns, 30ns | 1,55 v | 25ma | 3750 VRMs | 1/0 | 20 kV/µs | 100 ns, 100 ns | ||||||||||||||||
![]() | TLP120 (GB-TPL, F) | - - - | ![]() | 2216 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd (4 Leitungen), Möwenflügel | TLP120 | AC, DC | 1 | Transistor | 6-mfsop, 4 Blei | - - - | ROHS -KONFORM | 1 (unbegrenzt) | TLP120 (GB-TPLF) | Ear99 | 8541.49.8000 | 3.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 50 ma | 3750 VRMs | 100% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | ||||||||||||||
![]() | Tlp191b (u, c, f) | - - - | ![]() | 5785 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -40 ° C ~ 80 ° C. | Oberflächenhalterung | 6-smd (4 Leitungen), Möwenflügel | TLP191 | DC | 1 | Photovoltaik | 6-mfsop, 4 Blei | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 150 | 24 µA | - - - | 8v | 1,4 v | 50 ma | 2500 VRMs | - - - | - - - | 200 µs, 3 ms | - - - | |||||||||||||||
![]() | TLP2301 (e | 0,6100 | ![]() | 125 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -55 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLP2301 | DC | 1 | Transistor | 6-Sop | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 125 | 50 ma | - - - | 40V | 1,25 V. | 50 ma | 3750 VRMs | 50% @ 1ma | 600% @ 1ma | - - - | 300mV | |||||||||||||||
![]() | TLP185 (TPR, E) | - - - | ![]() | 6582 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLP185 | DC | 1 | Transistor | 6-Sop | Herunterladen | ROHS -KONFORM | TLP185 (TPRE) | Ear99 | 8541.49.8000 | 3.000 | 50 ma | 5 µs, 9 µs | 80V | 1,25 V. | 50 ma | 3750 VRMs | 50% @ 5ma | 400% @ 5ma | 9 µs, 9 µs | 300mV | |||||||||||||||
![]() | TLP781F (GRH-TP7, F) | - - - | ![]() | 8632 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | TLP781f | DC | 1 | Transistor | 4-smd | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (GRH-TP7F) TR | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 150% @ 5ma | 300% @ 5ma | 3 µs, 3 µs | 400mV | |||||||||||||||
![]() | TLP532 (BL-TP1, F) | - - - | ![]() | 8683 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Band & Rollen (TR) | Veraltet | TLP532 | - - - | 1 (unbegrenzt) | 264-TLP532 (BL-TP1F) TR | Ear99 | 8541.49.8000 | 1.500 | ||||||||||||||||||||||||||||||||
![]() | TLP620-4 (Hitachi, f | - - - | ![]() | 8382 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 0,300 ", 7,62 mm) | TLP620 | AC, DC | 4 | Transistor | 16-DIP | Herunterladen | 264-TLP620-4 (Hitachif | Ear99 | 8541.49.8000 | 1 | 50 ma | 2 µs, 3 µs | 55 v | 1,15 V | 50 ma | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | ||||||||||||||||
TLP2761 (D4-TP4, e | - - - | ![]() | 1286 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,295 ", 7,50 mm BreiTe) | TLP2761 | AC, DC | 1 | 2,7 V ~ 5,5 V. | 6-so | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | TLP2761 (D4-TP4E | Ear99 | 8541.49.8000 | 1.500 | 10 ma | 15mb | 3ns, 3ns | 1,5 v | 10 ma | 5000 VRMs | 1/0 | 20 kV/µs | 80ns, 80ns | ||||||||||||||||
![]() | Tlp628m (tp1, e | 0,9100 | ![]() | 7614 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 125 ° C. | Oberflächenhalterung | 4-smd (0,300 ", 7,62 mm) | TLP628 | DC | 1 | Transistor | 4-smd | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 1.500 | 50 ma | 5,5 µs, 10 µs | 350 V | 1,25 V. | 50 ma | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 10 µs, 10 µs | 400mV | ||||||||||||||||
![]() | TLP5832 (e | 2.8300 | ![]() | 4832 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 110 ° C. | Oberflächenhalterung | 8-Soic (0,295 ", 7,50 mm Breit) | DC | 1 | Push-Pull, Totem Pole | 15 V ~ 30 V | 8-so | Herunterladen | 1 (unbegrenzt) | 264-TLP5832 (e | Ear99 | 8541.49.8000 | 75 | - - - | 15ns, 8ns | 1,55 v | 20 ma | 5000 VRMs | 1/0 | 20 kV/µs | 200ns, 200ns | |||||||||||||||||
![]() | TLP183 (GB-TPL, e | 0,5000 | ![]() | 1538 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLP183 | DC | 1 | Transistor | 6-Sop | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 3.000 | 50 ma | 2 µs, 3 µs | 80V | 1,25 V. | 50 ma | 3750 VRMs | 100% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 300mV | |||||||||||||||
![]() | TLP185 (V4grtl, SE | - - - | ![]() | 9052 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLP185 | DC | 1 | Transistor -MIT -Basis | 6-Sop | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | TLP185 (v4grtlse | Ear99 | 8541.49.8000 | 3.000 | 50 ma | 2 µs, 3 µs | 80V | 1,25 V. | 50 ma | 3750 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 300mV | ||||||||||||||
![]() | TLP632 (GR-TP1, F) | - - - | ![]() | 2247 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Band & Rollen (TR) | Veraltet | TLP632 | - - - | 1 (unbegrenzt) | 264-TLP632 (GR-TP1F) TR | Ear99 | 8541.49.8000 | 1.500 |
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