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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Anzahl der Kanäle | Ausgangstyp | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Strom - Ausgang / Kanal | DatEnrate | Aufstieg / Fallzeit (Typ) | Spannung - Ausgang (max) | Spannung - Vorwärts (VF) (Typ) | Strom - DC Forward (if) (max) | Spannung - Isolation | Eingänge - SETE 1/SETE 2 | Transiente immunität der gemeinsamen modus (min) | Ausbreitungsverzögerung TPLH / TPHL (max) | Strom Halbertragungsverhöltnis (min) | Strom Halbertragungsverhöltnis (max) | Einschalen / Ausschalten (Typ) | VCE -Sättigung (max) |
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![]() | TLP785 (y, f) | 0,6400 | ![]() | 90 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP785 | DC | 1 | Transistor | 4-DIP | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 50% @ 5ma | 150% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
![]() | TLP781F (D4-GRL, F) | - - - | ![]() | 7229 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,400 ", 10,16 mm) | TLP781f | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (D4-GRLF) | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 200% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
![]() | Tlp190b (advtpluc, f | - - - | ![]() | 3675 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 85 ° C. | Oberflächenhalterung | 6-smd (4 Leitungen), Möwenflügel | DC | 1 | Photovoltaik | 6-mfsop, 4 Blei | Herunterladen | 264-TLP190b (AdvtPlucf | Ear99 | 8541.49.8000 | 1 | - - - | - - - | 8v | 1,4 v | 50 ma | 2500 VRMs | - - - | - - - | 200 µs, 1 ms | - - - | |||||||||
![]() | TLP9114B (NIEC-TL, F. | - - - | ![]() | 6623 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Schüttgut | Veraltet | - - - | 264-TLP9114B (NIEC-TLF | Ear99 | 8541.49.8000 | 1 | ||||||||||||||||||||||||||
![]() | TLP590B (OMT-LF1C, F. | - - - | ![]() | 6279 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 85 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel, 5 Hinweise | TLP590 | DC | 1 | Photovoltaik | 6-DIP-Möwenflügel | Herunterladen | 264-TLP590B (OMT-LF1CF | Ear99 | 8541.49.8000 | 1 | 12 µA | - - - | 7v | 1,4 v | 50 ma | 2500 VRMs | - - - | - - - | 200 µs, 1 ms | - - - | ||||||||
![]() | TLP160J (v4dmt7tr, f | - - - | ![]() | 8342 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Band & Rollen (TR) | Veraltet | TLP160 | - - - | 1 (unbegrenzt) | 264-TLP160J (V4DMT7TRFTR | Ear99 | 8541.49.8000 | 3.000 | ||||||||||||||||||||||||
![]() | TLP2768 (D4-TP, F) | - - - | ![]() | 6014 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,268 ", 6,80 mm BreiTe) | DC | 1 | Open Collector, Schottky Klemmte | 2,7 V ~ 5,5 V. | 6-sdip-möwenflügel | Herunterladen | 264-TLP2768 (D4-TPF) | Ear99 | 8541.49.8000 | 1 | 25 ma | 20mb | 30ns, 30ns | 1,55 v | 25ma | 5000 VRMs | 1/0 | 20 kV/µs | 60ns, 60 ns | |||||||||
![]() | TLP714F (D4-TP, F) | - - - | ![]() | 2411 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,268 ", 6,80 mm BreiTe) | TLP714 | DC | 1 | Offener Sammler | 4,5 V ~ 30 V | 6-sdip-möwenflügel | Herunterladen | 264-TLP714F (D4-TPF) | Ear99 | 8541.49.8000 | 1 | 15 Ma | 1 mbit / s | - - - | 1,55 v | 20 ma | 5000 VRMs | 1/0 | 20 kV/µs | 550ns, 400 ns | ||||||||
![]() | TLP2958 (D4-TP1, F) | - - - | ![]() | 1964 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 8-smd, Möwenflügel | DC | 1 | Push-Pull, Totem Pole | 3v ~ 20V | 8-smd | Herunterladen | 264-TLP2958 (D4-TP1F) | Ear99 | 8541.49.8000 | 1 | 25 ma | 5 mbit / s | 15ns, 10ns | 1,55 v | 25ma | 5000 VRMs | 1/0 | 20 kV/µs | 250ns, 250ns | |||||||||
![]() | TLP2766F (D4MBSTP, f | - - - | ![]() | 6271 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,268 ", 6,80 mm BreiTe) | TLP2766 | DC | 1 | Push-Pull, Totem Pole | 2,7 V ~ 5,5 V. | 6-sdip-möwenflügel | Herunterladen | 264-TLP2766F (D4MBSTPF | Ear99 | 8541.49.8000 | 1 | 10 ma | 20mb | 15ns, 15ns | 1,55 v | 25ma | 5000 VRMs | 1/0 | 20 kV/µs | 55ns, 55ns | ||||||||
![]() | TLP759 (D4MB-F2, J, F. | - - - | ![]() | 2825 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | DC | 1 | Transistor -MIT -Basis | 8-DIP | Herunterladen | 264-TLP759 (D4MB-F2JF | Ear99 | 8541.49.8000 | 1 | 8ma | - - - | 20V | 1,65 v | 25 ma | 5000 VRMs | 20% @ 16 ma | - - - | - - - | - - - | |||||||||
Tlp628m (gb, e | 0,9100 | ![]() | 5715 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -55 ° C ~ 125 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP628 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 100 | 50 ma | 5,5 µs, 10 µs | 350 V | 1,25 V. | 50 ma | 5000 VRMs | 100% @ 5ma | 600% @ 5ma | 10 µs, 10 µs | 400mV | |||||||||
TLP626 (LF1, F) | - - - | ![]() | 5424 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 4-smd (0,300 ", 7,62 mm) | AC, DC | 1 | Transistor | 4-smd | Herunterladen | 264-TLP626 (LF1F) | Ear99 | 8541.49.8000 | 1 | 50 ma | 8 µs, 8 µs | 55 v | 1,15 V | 60 mA | 5000 VRMs | 100% @ 1ma | 1200% @ 1ma | 10 µs, 8 µs | 400mV | ||||||||||
![]() | TLP531 (BL-LF1, F) | - - - | ![]() | 2671 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP531 | - - - | 1 (unbegrenzt) | 264-TLP531 (BL-LF1F) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP719F (D4SOY-TP, f | - - - | ![]() | 7583 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-Soic (0,268 ", 6,80 mm BreiTe) | TLP719 | DC | 1 | Transistor -MIT -Basis | 6-sdip | - - - | 264-TLP719F (D4SOY-TPF | Ear99 | 8541.49.8000 | 1 | 8ma | - - - | - - - | 1,65 v | 25 ma | 5000 VRMs | 20% @ 16 ma | - - - | - - - | - - - | ||||||||
![]() | TLP570 (TP1, F) | - - - | ![]() | 9827 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Band & Rollen (TR) | Veraltet | TLP570 | - - - | 1 (unbegrenzt) | 264-TLP570 (TP1F) TR | Ear99 | 8541.49.8000 | 1.500 | ||||||||||||||||||||||||
![]() | TLP9104A (Toyog2tlf | - - - | ![]() | 4143 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Schüttgut | Veraltet | - - - | 264-TLP9104A (Toyog2tlf | Ear99 | 8541.49.8000 | 1 | ||||||||||||||||||||||||||
![]() | TLP9121a (Toyogtl, f | - - - | ![]() | 7371 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Schüttgut | Veraltet | - - - | 264-TLP9121A (Toyogtlf | Ear99 | 8541.49.8000 | 1 | ||||||||||||||||||||||||||
![]() | TLP620-2 (GB-TP1, F) | - - - | ![]() | 8683 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 8-smd, Möwenflügel | TLP620 | AC, DC | 2 | Transistor | 8-smd | Herunterladen | 264-TLP620-2 (GB-TP1F) | Ear99 | 8541.49.8000 | 1 | 50 ma | 2 µs, 3 µs | 55 v | 1,15 V | 50 ma | 5000 VRMs | 100% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | ||||||||
![]() | TLP2531 (MBS, F) | - - - | ![]() | 6376 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | TLP2531 | DC | 2 | Transistor -MIT -Basis | 8-DIP | Herunterladen | 264-TLP2531 (MBSF) | Ear99 | 8541.49.8000 | 1 | 8ma | - - - | 15 v | 1,65 v | 25 ma | 2500 VRMs | 19% @ 16ma | 30% @ 16 ma | 200 ns, 300 ns | - - - | ||||||||
![]() | TLP126 (ASAD-TPL, F) | - - - | ![]() | 5953 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Band & Rollen (TR) | Veraltet | TLP126 | - - - | 1 (unbegrenzt) | 264-TLP126 (ASAD-TPLF) TR | Ear99 | 8541.49.8000 | 3.000 | ||||||||||||||||||||||||
![]() | TLP2372 (TPR, e | 1.9300 | ![]() | 4970 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2372 | DC | 1 | Push-Pull, Totem Pole | 2,2 V ~ 5,5 V. | 6-so, 5 Blei | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 3.000 | 8 ma | 20 mbit / s | 2,2ns, 1,6 ns | 1,53 v | 8ma | 3750 VRMs | 1/0 | 20 kV/µs | 75ns, 75ns | ||||||||
![]() | TLP759F (D4MBIMT4JF | - - - | ![]() | 5358 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | TLP759 | DC | 1 | Transistor -MIT -Basis | 8-DIP | Herunterladen | 264-TLP759F (D4MBIMT4JF | Ear99 | 8541.49.8000 | 1 | - - - | - - - | - - - | 1,65 v | 25 ma | 5000 VRMs | 20% @ 16 ma | - - - | - - - | - - - | ||||||||
![]() | TLP120 (HO-GB, F) | - - - | ![]() | 4907 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP120 | - - - | 1 (unbegrenzt) | 264-TLP120 (HO-GBF) | Ear99 | 8541.49.8000 | 150 | ||||||||||||||||||||||||
![]() | TLP332 (BV-LF2, F) | - - - | ![]() | 7018 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP332 | - - - | 1 (unbegrenzt) | 264-TLP332 (BV-LF2F) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP731 (D4-BLF2, f | - - - | ![]() | 4488 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP731 | - - - | 1 (unbegrenzt) | 264-TLP731 (D4-BLF2F | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP785 (Grh, f | - - - | ![]() | 6028 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP785 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP785 (Grhf | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 150% @ 5ma | 300% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
![]() | TLP732 (GR-LF4, F) | - - - | ![]() | 4249 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP732 | - - - | 1 (unbegrenzt) | 264-TLP732 (GR-LF4F) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP750 (D4-O-LF2, F) | - - - | ![]() | 7625 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP750 | - - - | 1 (unbegrenzt) | 264-TLP750 (D4-O-LF2F) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP733 (D4-GRL, M, F) | - - - | ![]() | 6919 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP733 | - - - | 1 (unbegrenzt) | 264-TLP733 (D4-GRLMF) | Ear99 | 8541.49.8000 | 50 |
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