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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Anzahl der Kanäle | Ausgangstyp | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Strom - Ausgang / Kanal | DatEnrate | Aufstieg / Fallzeit (Typ) | Spannung - Ausgang (max) | Spannung - Vorwärts (VF) (Typ) | Strom - DC Forward (if) (max) | Spannung - Isolation | Eingänge - SETE 1/SETE 2 | Transiente immunität der gemeinsamen modus (min) | Ausbreitungsverzögerung TPLH / TPHL (max) | Strom Halbertragungsverhöltnis (min) | Strom Halbertragungsverhöltnis (max) | Einschalen / Ausschalten (Typ) | VCE -Sättigung (max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TLP2366 (e) | 1.4200 | ![]() | 107 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2366 | DC | 1 | Push-Pull, Totem Pole | 2,7 V ~ 5,5 V. | 6-so, 5 Blei | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 125 | 10 ma | 20mb | 15ns, 15ns | 1,61V | 25ma | 3750 VRMs | 1/0 | 20 kV/µs | 40ns, 40ns | ||||||||
![]() | TLP781F (D4-BL, F) | - - - | ![]() | 5474 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,400 ", 10,16 mm) | TLP781f | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (D4-BLF) | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 200% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
Tlp2766a (e | 1.6400 | ![]() | 4000 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,295 ", 7,50 mm BreiTe) | TLP2766 | DC | 1 | Push-Pull, Totem Pole | 2,7 V ~ 5,5 V. | 6-so | - - - | 1 (unbegrenzt) | 264-tlp2766a (e | Ear99 | 8541.49.8000 | 125 | 10 ma | 20mb | 5ns, 4ns | 1,8 V (max) | 25ma | 5000 VRMs | 1/0 | 20 kV/µs | 55ns, 55ns | ||||||||
![]() | TLP2631 (TP5, F) | - - - | ![]() | 7126 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Band & Rollen (TR) | Veraltet | TLP2631 | - - - | 1 (unbegrenzt) | 264-TLP2631 (TP5F) TR | Ear99 | 8541.49.8000 | 1.500 | ||||||||||||||||||||||||
![]() | TLP385 (D4-TPR, e | 0,5600 | ![]() | 6071 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLP385 | DC | 1 | Transistor | 6-so, 4 Blei | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 3.000 | 50 ma | 2 µs, 3 µs | 80V | 1,25 V. | 50 ma | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 300mV | |||||||
![]() | TLP550 -lf2, f) | - - - | ![]() | 9120 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP550 | - - - | 1 (unbegrenzt) | 264-TLP550-LF2F) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP759F (D4-LF4, J, F. | - - - | ![]() | 6069 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 8-smd, Möwenflügel | DC | 1 | Transistor -MIT -Basis | 8-smd | Herunterladen | 264-TLP759F (D4-LF4JF | Ear99 | 8541.49.8000 | 1 | 8ma | - - - | 20V | 1,65 v | 25 ma | 5000 VRMs | 20% @ 16 ma | - - - | - - - | - - - | |||||||||
TLP2703 (e | 1.4600 | ![]() | 1968 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,295 ", 7,50 mm BreiTe) | TLP2703 | DC | 1 | Darlington | 6-so | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | TLP2703 (E (t | Ear99 | 8541.49.8000 | 125 | 80 Ma | - - - | 18V | 1,47 v | 20 ma | 5000 VRMs | 900% @ 500 ähm | 8000% @ 500 ähm | 330 ns, 2,5 µs | - - - | |||||||
![]() | TLP785 (D4gr-T6, f | - - - | ![]() | 3480 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP785 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP785 (D4gr-T6FTR | Ear99 | 8541.49.8000 | 4.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 300% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
TLP250HF (F) | - - - | ![]() | 6169 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | TLP250 | DC | 1 | Push-Pull, Totem Pole | 10 V ~ 30 V | 8-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP250HF (F) | Ear99 | 8541.49.8000 | 50 | 2 a | - - - | 50ns, 50 ns | 1,57 v | 5ma | 3750 VRMs | 1/0 | 40 kV/µs | 500 ns, 500 ns | ||||||||
TLP2367 (tpl, e | 0,9641 | ![]() | 4672 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2367 | DC | 1 | Push-Pull, Totem Pole | 2,7 V ~ 5,5 V. | 6-so, 5 Blei | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | TLP2367 (tple | Ear99 | 8541.49.8000 | 3.000 | 10 ma | 50 MB | 2ns, 1ns | 1,6 v | 15 Ma | 3750 VRMs | 1/0 | 25kV/µs | 20ns, 20ns | |||||||
![]() | TLP2312 (V4-TPR, e | 1.7300 | ![]() | 7089 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2312 | DC | 1 | Push-Pull, Totem Pole | 2,2 V ~ 5,5 V. | 6-so, 5 Blei | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 3.000 | 8 ma | 5 mbit / s | 2,2ns, 1,6 ns | 1,53 v | 8ma | 3750 VRMs | 1/0 | 20 kV/µs | 250ns, 250ns | ||||||||
![]() | TLP570 (MBS, F) | - - - | ![]() | 7499 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP570 | - - - | 1 (unbegrenzt) | 264-TLP570 (MBSF) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
TLP2395 (tpl, e | - - - | ![]() | 6515 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2395 | DC | 1 | Push-Pull, Totem Pole | 3v ~ 20V | 6-so, 5 Blei | - - - | 1 (unbegrenzt) | 264-TLP2395 (tPletr | Ear99 | 8541.49.8000 | 3.000 | 25 ma | 5 mbit / s | 15ns, 12ns | 1,5 v | 20 ma | 3750 VRMs | 1/0 | 20 kV/µs | 250ns, 250ns | ||||||||
![]() | TLP785 (GRL-TP6, f | - - - | ![]() | 4625 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | TLP785 | DC | 1 | Transistor | 4-smd | Herunterladen | 1 (unbegrenzt) | 264-TLP785 (GRL-TP6FTR | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 200% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
TLP2355 (e | 1.0200 | ![]() | 4365 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2355 | DC | 1 | Push-Pull, Totem Pole | 3v ~ 20V | 6-so, 5 Blei | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 125 | 25 ma | - - - | 15ns, 12ns | 1,55 v | 20 ma | 3750 VRMs | 1/0 | 25kV/µs | 250ns, 250ns | ||||||||
![]() | TLP550 (y, f) | - - - | ![]() | 7449 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP550 | - - - | 1 (unbegrenzt) | 264-TLP550 (YF) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP358F (D4, F) | - - - | ![]() | 4603 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -40 ° C ~ 100 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | TLP358 | DC | 1 | Push-Pull, Totem Pole | 15 V ~ 30 V | 8-DIP | Herunterladen | 264-TLP358F (D4F) | Ear99 | 8541.49.8000 | 1 | 6 a | - - - | 17ns, 17ns | 1,57 v | 20 ma | 3750 VRMs | 1/0 | 20 kV/µs | 500 ns, 500 ns | ||||||||
![]() | TLP131 (GR-TPL, F) | - - - | ![]() | 3379 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm Beitite), 5 Leads | TLP131 | DC | 1 | Transistor -MIT -Basis | 6-mfsop, 5 Blei | - - - | ROHS -KONFORM | 1 (unbegrenzt) | TLP131 (GR-TPLF) | Ear99 | 8541.49.8000 | 3.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 50 ma | 3750 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | ||||||
![]() | TLP9104A (AST-TL, F) | - - - | ![]() | 2892 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Schüttgut | Veraltet | - - - | 264-TLP9104A (AST-TLF) | Ear99 | 8541.49.8000 | 1 | ||||||||||||||||||||||||||
![]() | TLP2530 (pp, f) | - - - | ![]() | 6811 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | TLP2530 | DC | 2 | Transistor -MIT -Basis | 8-DIP | Herunterladen | 264-TLP2530 (PPF) | Ear99 | 8541.49.8000 | 1 | 8ma | - - - | 15 v | 1,65 v | 25 ma | 2500 VRMs | 7% @ 16 ma | 30% @ 16 ma | 300 ns, 500 ns | - - - | ||||||||
![]() | TLP2312 (e | 1.7300 | ![]() | 125 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2312 | DC | 1 | Push-Pull, Totem Pole | 2,2 V ~ 5,5 V. | 6-so, 5 Blei | Herunterladen | 1 (unbegrenzt) | 264-TLP2312 (e | Ear99 | 8541.49.8000 | 125 | 8 ma | 5 mbit / s | 2,2ns, 1,6 ns | 1,53 v | 8ma | 3750 VRMs | 1/0 | 20 kV/µs | 250ns, 250ns | |||||||
![]() | TLP781 (D4-BL, F) | - - - | ![]() | 4491 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP781 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP781 (D4-BLF) | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 200% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
![]() | TLP785F (GR-LF7, f | - - - | ![]() | 3252 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,400 ", 10,16 mm) | TLP785 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP785F (GR-LF7F | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 200% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
![]() | TLP127 (Del-TPR, F) | - - - | ![]() | 5359 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd (4 Leitungen), Möwenflügel | TLP127 | DC | 1 | Darlington | 6-mfsop, 4 Blei | - - - | 1 (unbegrenzt) | 264-TLP127 (DEL-TPRF) TR | Ear99 | 8541.49.8000 | 3.000 | 150 Ma | 40 µs, 15 µs | 300 V | 1,15 V | 50 ma | 2500 VRMs | 1000% @ 1ma | - - - | 50 µs, 15 µs | 1,2 v | |||||||
![]() | TLP781F (D4BL-LF7, F. | - - - | ![]() | 6770 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,400 ", 10,16 mm) | TLP781f | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (D4BL-LF7F | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 200% @ 5ma | 400% @ 5ma | 3 µs, 3 µs | 400mV | |||||||
![]() | TLP627MF (TP4, e | 0,3090 | ![]() | 1 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | TLP627 | DC | 1 | Darlington | 4-smd | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 1.000 | 150 Ma | 60 µs, 30 µs | 300 V | 1,25 V. | 50 ma | 5000 VRMs | 1000% @ 1ma | - - - | 110 µs, 30 µs | 1,2 v | |||||||
![]() | TLP632 (HO-GB, F) | - - - | ![]() | 9433 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP632 | - - - | 1 (unbegrenzt) | 264-TLP632 (HO-GBF) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP627-2 (Hitomk, F) | - - - | ![]() | 6037 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP627 | - - - | 1 (unbegrenzt) | 264-TLP627-2 (HITOMKF) | Ear99 | 8541.49.8000 | 50 | ||||||||||||||||||||||||
![]() | TLP2719 (e | 1.7200 | ![]() | 1683 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -40 ° C ~ 100 ° C. | Oberflächenhalterung | 6-Soic (0,295 ", 7,50 mm BreiTe) | TLP2719 | DC | 1 | Offener Sammler | 4,5 V ~ 20V | 6-so | Herunterladen | 1 (unbegrenzt) | 264-TLP2719 (e | Ear99 | 8541.49.8000 | 125 | 8 ma | 1MB | - - - | 1,6 v | 25ma | 5000 VRMs | 1/0 | 10kV/µs | 800 ns, 800 ns |
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