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E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | Andere Namen | Eccn | Standardpaket | Taktfrequenz | Speichertyp | Speichergrö | Zugriffszeit | Speicherformat | Speicherorganisation | Speicherschnittstelle | Zykluszeitscheiben - Würze, Site |
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![]() | MT62F1536M64D8EK-023 WT: B Tr | 67.8450 | ![]() | 6633 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 441-tfbga | SDRAM - Mobile LPDDR5 | - - - | 441-tfbga (14x14) | - - - | 557-MT62F1536M64D8EK-023WT: BTR | 1.500 | 4,266 GHz | Flüchtig | 96Gbit | Dram | 1,5 GX 64 | Parallel | - - - | ||||
![]() | MT62F1536M64D8EK-026 AAT: B Tr | 94.8300 | ![]() | 2637 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C. | Oberflächenhalterung | 441-tfbga | SDRAM - Mobile LPDDR5 | - - - | 441-tfbga (14x14) | - - - | 557-MT62F1536M64D8EK-026AAT: BTR | 1.500 | 3,2 GHz | Flüchtig | 96Gbit | Dram | 1,5 GX 64 | - - - | - - - | ||||
![]() | MT62F2G64D8EK-026 WT: C Tr | 90.4650 | ![]() | 7627 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 441-tfbga | SDRAM - Mobile LPDDR5 | 1,05 v | 441-tfbga (14x14) | - - - | 557-MT62F2G64D8EK-026WT: Ctr | 2.000 | 3,2 GHz | Flüchtig | 128Gbit | Dram | 2g x 64 | Parallel | - - - | ||||
![]() | MT62F512M32D2DS-031 WT: B Tr | 12.2400 | ![]() | 4229 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 200-WFBGA | SDRAM - Mobile LPDDR5 | - - - | 200-WFBGA (10x14,5) | - - - | 557-MT62F512M32D2DS-031WT: BTR | 2.000 | 3,2 GHz | Flüchtig | 16gbit | Dram | 512 mx 32 | Parallel | - - - | ||||
![]() | MT29F1T08GBLCEJ4: c | 19.5450 | ![]() | 1970 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MT29F1T08GBLCEJ4: c | 1 | |||||||||||||||||
![]() | MT53B256M16D1Z00MWC1S | 10.4800 | ![]() | 5744 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MT53B256M16D1Z00MWC1S | 1 | |||||||||||||||||
![]() | MT42L16M32D1HE-18 AUT: E TR | 7.6800 | ![]() | 6201 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MT42L16M32D1HE-18AUT: ETR | 2.500 | |||||||||||||||||
![]() | MT29F4T08EQLEEG8-QD: e | 105.9600 | ![]() | 1875 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MT29F4T08EQLEEG8-QD: e | 1 | |||||||||||||||||
![]() | MT53E1536M32D4DE-046 WT ES: C. | 30.2400 | ![]() | 5215 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | -25 ° C ~ 85 ° C (TC) | Oberflächenhalterung | 200-tfbga | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 200-TFBGA (10x14,5) | - - - | 557-MT53E1536M32D4DE-046WTES: c | 1 | 2.133 GHz | Flüchtig | 48Gbit | 3,5 ns | Dram | 1,5 GX 32 | Parallel | 18ns | |||
![]() | MT53E1536M64D8HJ-046 AAT: b | 92.1450 | ![]() | 3765 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 105 ° C. | Oberflächenhalterung | 556-tfbga | SDRAM - Mobile LPDDR4 | - - - | 556-WFBGA (12,4x12,4) | - - - | 557-MT53E1536M64D8HJ-046AAT: b | 1 | 2.133 GHz | Flüchtig | 96Gbit | Dram | 1,5 mx 64 | - - - | - - - | ||||
![]() | MTC10C1084S1EC48BAZ | 171.6000 | ![]() | 4467 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MTC10C1084S1EC48BAZ | 1 | |||||||||||||||||
![]() | MTFC64GASAONS-AIT TR | 37.6950 | ![]() | 7973 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q104 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 95 ° C (TC) | Oberflächenhalterung | 153-tfbga | Flash - Nand (SLC) | 2,7 V ~ 3,6 V. | 153-TFBGA (11,5x13) | - - - | 557-MTFC64Gasaons-Aittr | 2.000 | 52 MHz | Nicht Flüchtig | 512Gbit | Blitz | 64g x 8 | UFS2.1 | - - - | ||||
![]() | MT29F2T08ellceg7-R: C Tr | 60.5400 | ![]() | 5587 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MT29F2T08ellceg7-R: Ctr | 2.000 | |||||||||||||||||
MT53E256M32D2FW-046 AAT: b | 15.4950 | ![]() | 5679 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 105 ° C (TC) | Oberflächenhalterung | 200-tfbga | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 200-TFBGA (10x14,5) | Herunterladen | 557-MT53E256M32D2FW-046AAT: b | 1 | 2.133 GHz | Flüchtig | 8gbit | 3,5 ns | Dram | 256 mx 32 | Parallel | 18ns | ||||
![]() | MTFC32GAZAOTD-AIT | 24.8700 | ![]() | 9730 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-mtfc32Gazaotd-ait | 1 | |||||||||||||||||
![]() | MT62F1G64D4EK-026 WT: B Tr | 45.6900 | ![]() | 4770 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 441-tfbga | SDRAM - Mobile LPDDR5 | 1,05 v | 441-tfbga (14x14) | - - - | 557-MT62F1G64D4EK-026WT: BTR | 2.000 | 3,2 GHz | Flüchtig | 64Gbit | Dram | 1g x 64 | Parallel | - - - | ||||
![]() | MT62F768M64D4EK-023 AAT: b | 47.8950 | ![]() | 5053 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | - - - | Oberflächenhalterung | 441-tfbga | MT62F768 | SDRAM - Mobile LPDDR5 | - - - | 441-tfbga (14x14) | - - - | 557-MT62F768M64D4EK-023AAT: b | 1 | 4,266 GHz | Flüchtig | 48Gbit | Dram | 768m x 64 | Parallel | - - - | |||
![]() | MT62F2G32D8DR-031 WT: B Tr | 47.0400 | ![]() | 5221 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MT62F2G32D8DR-031WT: BTR | 2.000 | |||||||||||||||||
![]() | MT62F1536M64D8CL-026 WT: b | 55.3050 | ![]() | 6706 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | - - - | - - - | SDRAM - Mobile LPDDR5 | - - - | - - - | - - - | 557-MT62F1536M64D8CL-026WT: b | 1 | 3,2 GHz | Flüchtig | 96Gbit | Dram | 1,5 GX 64 | Parallel | - - - | ||||
![]() | MTFC32GASAONS-IT TR | 20.8050 | ![]() | 2712 | 0.00000000 | Micron Technology Inc. | E • MMC ™ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 95 ° C (TC) | Oberflächenhalterung | 153-tfbga | Flash - Nand (SLC) | 2,7 V ~ 3,6 V. | 153-TFBGA (11,5x13) | - - - | 557-MTFC32GASAONS-ITTR | 2.000 | 52 MHz | Nicht Flüchtig | 256Gbit | Blitz | 32g x 8 | UFS2.1 | - - - | ||||
![]() | MT53E4G32D8GS-046 WT: c | 127.0200 | ![]() | 4438 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | -25 ° C ~ 85 ° C. | - - - | - - - | SDRAM - Mobile LPDDR4 | - - - | - - - | - - - | 557-MT53E4G32D8GS-046WT: c | 1 | 2.133 GHz | Flüchtig | 128Gbit | Dram | 4g x 32 | Parallel | - - - | ||||
![]() | MT62F2G64D8EK-023 WT: b | 90.4650 | ![]() | 6037 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 441-tfbga | SDRAM - Mobile LPDDR5 | 1,05 v | 441-tfbga (14x14) | - - - | 557-MT62F2G64D8EK-023WT: b | 1 | 4,266 GHz | Flüchtig | 128Gbit | Dram | 2g x 64 | Parallel | - - - | ||||
![]() | MT29F2G01ABAGD12-aut: g | 3.2005 | ![]() | 6152 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MT29F2G01ABAGD12-AUT: g | 1 | |||||||||||||||||
![]() | MT29GZ5A5BPGGA-046it.87J | 9.0000 | ![]() | 4816 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 149-WFBGA | Flash - Nand (SLC), DRAM - LPDDR4 | 1,06 V ~ 1,17 V, 1,7 V ~ 1,95 V. | 149-WFBGA (8x9,5) | - - - | 557-MT29GZ5A5BPGGA-046it.87J | 1 | NICKTFLÜCHIG, FLÜCHIGIG | 4Gbit | 25 ns | Blitz, Ram | 512 MX 8 | Onfi | 30ns | ||||
![]() | MT53E1G64D4HJ-046 WT: a Tr | 47.4300 | ![]() | 9577 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MT53E1G64D4HJ-046WT: ATR | 2.000 | |||||||||||||||||
![]() | MT29F8T08EWLEEM5-QA: e | - - - | ![]() | 7472 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Veraltet | - - - | 557-MT29F8T08EWLEEM5-QA: e | Veraltet | 1 | ||||||||||||||||
![]() | MT53E1G64D4NZ-046 WT: C Tr | 42.4500 | ![]() | 6338 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C (TC) | Oberflächenhalterung | 376-WFBGA | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 376-WFBGA (14x14) | Herunterladen | 557-MT53E1G64D4NZ-046WT: CTR | 2.000 | 2.133 GHz | Flüchtig | 64Gbit | 3,5 ns | Dram | 1g x 64 | Parallel | 18ns | |||
![]() | MTFC32GASAONS-AIT TR | 21.1800 | ![]() | 3919 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q104 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 95 ° C (TC) | Oberflächenhalterung | 153-tfbga | Flash - Nand (SLC) | 2,7 V ~ 3,6 V. | 153-TFBGA (11,5x13) | - - - | 557-MTFC32GASAONS-AITTR | 2.000 | 52 MHz | Nicht Flüchtig | 256Gbit | Blitz | 32g x 8 | UFS2.1 | - - - | ||||
![]() | MT62F2G32D4DS-023 IT: b | 50.2800 | ![]() | 5505 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | Oberflächenhalterung | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1,05 v | 200-WFBGA (10x14,5) | - - - | 557-MT62F2G32D4DS-023it: b | 1 | 4,266 GHz | Flüchtig | 64Gbit | Dram | 2g x 32 | Parallel | - - - | ||||
![]() | MT29F4T08Eulgem4-ITF: g | 130.1100 | ![]() | 6151 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MT29F4T08Eulgem4-ITF: g | 1 |
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