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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | Andere Namen | Standardpaket | Taktfrequenz | Speichertyp | Speichergrö | Zugriffszeit | Speicherformat | Speicherorganisation | Speicherschnittstelle | Zykluszeitscheiben - Würze, Site |
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![]() | MT62F768M64D4EK-023 AIT: b | 43.5300 | ![]() | 3414 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | - - - | Oberflächenhalterung | 441-tfbga | MT62F768 | SDRAM - Mobile LPDDR5 | - - - | 441-tfbga (14x14) | - - - | 557-MT62F768M64D4EK-023AIT: b | 1 | 4,266 GHz | Flüchtig | 48Gbit | Dram | 768m x 64 | Parallel | - - - | ||
![]() | MT29F2T08LEG7-QD: e | 52.9800 | ![]() | 3786 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MT29F2T08LEG7-QD: e | 1 | ||||||||||||||||
![]() | MT53E1G64D4HJ-046 AAT: C Tr | 56.5050 | ![]() | 1283 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TC) | Oberflächenhalterung | 556-tfbga | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 556-WFBGA (12,4x12,4) | Herunterladen | 557-MT53E1G64D4HJ-046AAT: Ctr | 2.000 | 2.133 GHz | Flüchtig | 64Gbit | 3,5 ns | Dram | 1g x 64 | Parallel | 18ns | ||
![]() | MT53E1536M32D4DE-046 AIT: b | 44.2350 | ![]() | 8780 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 95 ° C (TC) | Oberflächenhalterung | 200-tfbga | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 200-TFBGA (10x14,5) | - - - | 557-MT53E1536M32D4DE-046AIT: b | 1 | 2.133 GHz | Flüchtig | 48Gbit | 3,5 ns | Dram | 1,5 GX 32 | Parallel | 18ns | ||
MT53E1G16D1FW-046 AAT: a Tr | 15.9600 | ![]() | 3441 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TC) | Oberflächenhalterung | 200-tfbga | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 200-TFBGA (10x14,5) | Herunterladen | 557-MT53E1G16D1FW-046AAT: ATR | 2.000 | 2.133 GHz | Flüchtig | 16gbit | 3,5 ns | Dram | 1g x 16 | Parallel | 18ns | |||
![]() | MT62F1G32D2DS-023 AAT: c | 31.9350 | ![]() | 2429 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 105 ° C. | Oberflächenhalterung | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1,05 v | 200-WFBGA (10x14,5) | - - - | 557-MT62F1G32D2DS-023AAT: c | 1 | 3,2 GHz | Flüchtig | 32Gbit | Dram | 1g x 32 | Parallel | - - - | |||
MT53E1G16D1FW-046 AAT: a | 15.9600 | ![]() | 6318 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 105 ° C (TC) | Oberflächenhalterung | 200-tfbga | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 200-TFBGA (10x14,5) | Herunterladen | 557-MT53E1G16D1FW-046AAT: a | 1 | 2.133 GHz | Flüchtig | 16gbit | 3,5 ns | Dram | 1g x 16 | Parallel | 18ns | |||
![]() | MT62F1G32D2DS-023 IT: C Tr | 25.1400 | ![]() | 2118 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MT62F1G32D2DS-023it: Ctr | 2.000 | ||||||||||||||||
![]() | MT29F4T08EULCEM4-QJ: C Tr | 121.0800 | ![]() | 8818 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MT29F4T08Eulcem4-QJ: Ctr | 2.000 | ||||||||||||||||
![]() | MTFC256GAZAOTD-AIT | 90.5250 | ![]() | 6889 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-MTFC256GAZAOTD-AIT | 1 | ||||||||||||||||
![]() | MT29GZ6A6BPIET-53AAT.112 | 20.2200 | ![]() | 7587 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 149-VFBGA | Flash - Nand (SLC), DRAM - LPDDR4 | 1,06 V ~ 1,17 V, 1,7 V ~ 1,95 V. | 149-VFBGA (8x9,5) | - - - | 557-MT29GZ6A6BPIET-53AAT.112 | 1 | NICKTFLÜCHIG, FLÜCHIGIG | 8gbit | 25 ns | Blitz, Ram | 1g x 8 | Onfi | 30ns | |||
![]() | MT29F2T08Gelcej4-QJ: c | 39.0600 | ![]() | 5527 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-mt29f2t08gelcej4-QJ: c | 1 | ||||||||||||||||
![]() | MT29F1T08EELKEJ4-ITF: K. | 36.9000 | ![]() | 1779 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-mt29f1t08eelkej4-itf: k | 1 | ||||||||||||||||
![]() | MT29F512G08EBLGEJ4-ITF: G Tr | 17.6850 | ![]() | 9523 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MT29F512G08EBLGEJ4-ITF: GTR | 2.000 | ||||||||||||||||
![]() | MT53E2G64D8TN-046 AAT: a Tr | 122.8500 | ![]() | 1909 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TC) | Oberflächenhalterung | 556-LFBGA | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 556-LFBGA (12,4x12,4) | - - - | 557-MT53E2G64D8TN-046AAT: ATR | 2.000 | 2.133 GHz | Flüchtig | 128Gbit | 3,5 ns | Dram | 2g x 64 | Parallel | 18ns | ||
![]() | MT29GZ6A6BPIET-53AIT.112 | 18.3750 | ![]() | 8592 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 149-VFBGA | Flash - Nand (SLC), DRAM - LPDDR4 | 1,06 V ~ 1,17 V, 1,7 V ~ 1,95 V. | 149-VFBGA (8x9,5) | - - - | 557-MT29GZZZ6A6BPIET-53AIT.112 | 1 | NICKTFLÜCHIG, FLÜCHIGIG | 8gbit | 25 ns | Blitz, Ram | 1g x 8 | Onfi | 30ns | |||
![]() | MT53E1536M64D8HJ-046 WT: C Tr | 67.8450 | ![]() | 5913 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 556-tfbga | SDRAM - Mobile LPDDR4 | - - - | 556-WFBGA (12,4x12,4) | - - - | 557-MT53E1536M64D8HJ-046WT: CTR | 2.000 | 2.133 GHz | Flüchtig | 96Gbit | Dram | 1,5 mx 64 | - - - | - - - | |||
MT53E256M32D2FW-046 WT: B Tr | 11.6400 | ![]() | 9792 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -30 ° C ~ 85 ° C (TC) | Oberflächenhalterung | 200-tfbga | SDRAM - Mobile LPDDR4X | 1,06 V ~ 1,17 V. | 200-TFBGA (10x14,5) | Herunterladen | 557-MT53E256M32D2FW-046WT: BTR | 2.000 | 2.133 GHz | Flüchtig | 8gbit | 3,5 ns | Dram | 256 mx 32 | Parallel | 18ns | |||
![]() | MT29GZ6A6BPIET-046AIT.112 | 18.3750 | ![]() | 9376 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Kasten | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 149-VFBGA | Flash - Nand (SLC), DRAM - LPDDR4 | 1,06 V ~ 1,17 V, 1,7 V ~ 1,95 V. | 149-VFBGA (8x9,5) | - - - | 557-MT29GZZZ6A6BPIET-046AIT.112 | 1 | 2.133 GHz | NICKTFLÜCHIG, FLÜCHIGIG | 8gbit (NAND), 8GBIT (LPDDR4) | 25 ns | Blitz, Ram | 1G x 8 (NAND), 512 MX 16 (LPDDR4) | Onfi | 20ns, 30ns | ||
![]() | MT29F1T08EBLCHD4-QA: C Tr | 20.9850 | ![]() | 5429 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-mt29f1t08eblchd4-qa: ctr | 2.000 | ||||||||||||||||
![]() | MT62F1536M64D8EK-023 AIT: B Tr | 86.2050 | ![]() | 1195 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 95 ° C. | Oberflächenhalterung | 441-tfbga | SDRAM - Mobile LPDDR5 | - - - | 441-tfbga (14x14) | - - - | 557-MT62F1536M64D8EK-023AIT: BTR | 1.500 | 4,266 GHz | Flüchtig | 96Gbit | Dram | 1,5 GX 64 | Parallel | - - - | |||
![]() | MTFC64Gaxaqea-wt Tr | 7.5600 | ![]() | 1846 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | - - - | 557-MTFC64Gaxaqea-Wttr | 2.000 | ||||||||||||||||
![]() | MT29GZ6A6BPIET-53AAT.112 Tr | 20.2200 | ![]() | 2110 | 0.00000000 | Micron Technology Inc. | Automobil, AEC-Q100 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 149-VFBGA | Flash - Nand (SLC), DRAM - LPDDR4 | 1,06 V ~ 1,17 V, 1,7 V ~ 1,95 V. | 149-VFBGA (8x9,5) | - - - | 557-MT29GZ6A6BPIET-53AAT.112TR | 2.000 | NICKTFLÜCHIG, FLÜCHIGIG | 8gbit | 25 ns | Blitz, Ram | 1g x 8 | Onfi | 30ns | |||
![]() | MT62F1G64D4EK-023 WT: B Tr | 45.6900 | ![]() | 5908 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 441-tfbga | SDRAM - Mobile LPDDR5 | 1,05 v | 441-tfbga (14x14) | - - - | 557-MT62F1G64D4EK-023WT: BTR | 2.000 | 2.133 GHz | Flüchtig | 64Gbit | Dram | 1g x 64 | Parallel | - - - | |||
![]() | MT40A512M8SA-062E: F Tr | 8.3250 | ![]() | 7717 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | 0 ° C ~ 95 ° C (TC) | Oberflächenhalterung | 78-tfbga | SDRAM - DDR4 | 1,14 V ~ 1,26 V. | 78-FBGA (7,5x11) | Herunterladen | 557-MT40A512M8SA-062E: ftr | 2.000 | 1,6 GHz | Flüchtig | 4Gbit | 19 ns | Dram | 512 MX 8 | Pod | 15ns | ||
![]() | MT62F768M64D4ZU-026 WT: b | 27.9300 | ![]() | 6515 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | -25 ° C ~ 85 ° C. | - - - | - - - | MT62F768 | SDRAM - Mobile LPDDR5 | - - - | - - - | - - - | 557-MT62F768M64D4ZU-026WT: b | 1 | 3,2 GHz | Flüchtig | 48Gbit | Dram | 768m x 64 | Parallel | - - - | ||
![]() | MT53E1536M64D8HJ-046 WT: B Tr | 69.2400 | ![]() | 6178 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C. | Oberflächenhalterung | 556-tfbga | SDRAM - Mobile LPDDR4 | - - - | 556-WFBGA (12,4x12,4) | - - - | 557-MT53E1536M64D8HJ-046WT: BTR | 2.000 | 2.133 GHz | Flüchtig | 96Gbit | Dram | 1,5 mx 64 | - - - | - - - | |||
![]() | MTFC32GAZAQHD-WT TR | 14.3400 | ![]() | 1213 | 0.00000000 | Micron Technology Inc. | E • MMC ™ | Band & Rollen (TR) | Aktiv | -25 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 153-VFBGA | Flash - Nand (SLC) | 2,7 V ~ 3,6 V. | 153-VFBGA (11,5x13) | - - - | 557-mtfc32Gazaqhd-wttr | 2.000 | 200 MHz | Nicht Flüchtig | 256Gbit | Blitz | 32g x 8 | EMMC_5.1 | - - - | |||
![]() | MT29F8T08ESLEEG4-QB: e | 211.8900 | ![]() | 5592 | 0.00000000 | Micron Technology Inc. | - - - | Kasten | Aktiv | - - - | 557-mt29f8t08esleeg4-QB: e | 1 | ||||||||||||||||
![]() | MT29F8T08EWLEEM5-T: E Tr | 171.6300 | ![]() | 8452 | 0.00000000 | Micron Technology Inc. | - - - | Band & Rollen (TR) | Aktiv | 0 ° C ~ 70 ° C. | - - - | - - - | Flash - Nand (TLC) | - - - | - - - | - - - | 557-MT29F8T08EWLEEM5-T: ETR | 1.500 | Nicht Flüchtig | 8tbit | Blitz | 1T x 8 | Parallel | - - - |
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