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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | Spannung - Ausgang | FET -Typ | Strom - Hold (ih) (max) | Stromspannung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Triactyp | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Spannung - Gate Trigger (VGT) (max) | Strom - nicht -rep. Surge 50, 60 Hz (ITSM) | Strom - Gate Trigger (IGT) (max) | Spannung - Im Zustand (VTM) (max) | SCR -Typ | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Strom Abfluss (ID) - Maximal | Spannung - Offset (VT) | Strom - Tor zu Anodenleckage (Igao) | Strom - tal (iv) | Strom - Peak |
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![]() | CMHZ4693 Tr | - - - | ![]() | 9191 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | ± 5% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOD-123 | 500 MW | SOD-123 | Herunterladen | UnberÜHrt Ereichen | 1514-cmHz4693tr | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 10 µa @ 5,7 V | 7,5 v | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5619 bk | - - - | ![]() | 3249 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Lets Kaufen | K. Loch | R-1, axial | 1N5619 | Standard | GPR-1A | - - - | UnberÜHrt Ereichen | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,2 V @ 1 a | 250 ns | 500 NA @ 600 V | -65 ° C ~ 200 ° C. | 1a | 27pf @ 5v, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CP210-2N4416-CT | - - - | ![]() | 8379 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | Sterben | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0040 | 1 | N-Kanal | 30 v | 4pf @ 15V | 30 v | 5 ma @ 20 v | 6 V @ 1 na | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PN4391 TRE | - - - | ![]() | 2529 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | PN4391 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 14pf @ 20V | 40 v | 50 mA @ 20 V | 4 V @ 1 na | 30 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CMPDM303NH TR | - - - | ![]() | 8466 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-3 Flache Leitungen | MOSFET (Metalloxid) | SOT-23F | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 3.6a (TA) | 2,5 V, 4,5 V. | 40mohm @ 1,8a, 4,5 V. | 1,2 V @ 250 ähm | 13 NC @ 4,5 V. | 12V | 590 PF @ 10 V. | - - - | 350 MW (TA) | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | CMPP6027R TR | - - - | ![]() | 2536 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | To-236-3, sc-59, SOT-23-3 | Herunterladen | 1 (unbegrenzt) | CMPP6027RTR | Ear99 | 8541.21.0095 | 3.000 | 6v | 40V | 167 MW | 1,6 v | 10 Na | 50 µA | 2 µA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CP216-2N4856-cm | - - - | ![]() | 1149 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Sterben | Sterben | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP216-2N4856-CM | 0000.00.0000 | 400 | N-Kanal | 40 v | 18pf @ 10v | 40 v | 50 mA @ 15 V | 4 V @ 0,5 na | 25 Ohm | 50 ma | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CP388X-BC546B-CT | - - - | ![]() | 3885 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP388 | 500 MW | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP388X-BC546B-CT | Ear99 | 8541.21.0095 | 400 | 65 V | 100 ma | 15NA (ICBO) | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CP210-2N4416A-WN | - - - | ![]() | 3600 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | Sterben | - - - | 1514-CP210-2N4416A-WN | Veraltet | 72.000 | N-Kanal | 35 V | 4pf @ 15V | 35 V | 5 ma @ 20 v | 2,5 V @ 1 na | 15 Ma | |||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2218 PBFREE | 1.2173 | ![]() | 9757 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205ad, bis 39-3 Metall Kann | 3 w | To-39 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 500 | 30 v | 800 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 40 @ 150 mA, 10V | 250 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||
CBRHDSH2-40 TR13 PBFREE | 0,7300 | ![]() | 56 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -50 ° C ~ 125 ° C (TJ) | Oberflächenhalterung | 4-smd, Möwenflügel | CBRHDSH2 | Schottky | 4-HD-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 3.000 | 500 mV @ 2 a | 50 µa @ 40 V | 2 a | Einphase | 40 v | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CDM7-600LR TR13 PBFREE | 1.6600 | ![]() | 2 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | CDM7-600 | MOSFET (Metalloxid) | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 7a (TC) | 10V | 580 MOHM @ 3,5A, 10V | 4v @ 250 ähm | 14,5 NC @ 10 V. | 30V | 440 PF @ 100 V | - - - | 60 W (TC) | ||||||||||||||||||||||||||||||||||||||||||||
2N4392 PBFREE | 3.0000 | ![]() | 4 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 1,8 w | To-18 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 14pf @ 20V | 40 v | 25 mA @ 20 V | 2 V @ 1 na | 60 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CP398X-CTLDM303N-CT | - - - | ![]() | 1125 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP398 | MOSFET (Metalloxid) | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 3.6a (TA) | 2,5 V, 4,5 V. | 78mohm @ 1,8a, 2,5 V. | 1,2 V @ 250 ähm | 13 NC @ 4,5 V. | 12V | 590 PF @ 10 V. | - - - | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | CMLDM7120G TR PBFREE | 0,7600 | ![]() | 2 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | CMLDM7120 | MOSFET (Metalloxid) | SOT-563 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 1a (ta) | 1,5 V, 4V | 100MOHM @ 500 mA, 4,5 V. | 1,2 V @ 1ma | 2,4 NC @ 4,5 V. | 8v | 220 PF @ 10 V | - - - | 150 MW (TA) | ||||||||||||||||||||||||||||||||||||||||||||
![]() | CBR10A-J060 | - - - | ![]() | 9720 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | - - - | K. Loch | 4 Quadratmeter, cm | Lawine | CM | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 1 | 1,2 V @ 5 a | 10 µa @ 600 V | 10 a | Einphase | 600 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CQ220I-8m | - - - | ![]() | 4173 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -40 ° C ~ 110 ° C (TJ) | K. Loch | To-220-3 | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 1 | Einzel | 25 ma | Praktikant Ausgelöst | 600 V | 8 a | 1,5 v | - - - | 50 ma | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CP327V-MPSA27-WN | - - - | ![]() | 5273 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP327 | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP327V-MPSA27-WN | Ear99 | 8541.21.0040 | 1 | 60 v | 500 mA | 500NA | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4385 BK PBFREE | - - - | ![]() | 3480 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | K. Loch | Do-204Al, Do-41, axial | Standard | Do-41 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 1514-1N4385BKPBFREE | Ear99 | 8541.10.0080 | 50 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,1 V @ 1 a | 10 µs | 10 µa @ 600 V | -65 ° C ~ 200 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CMPZ4101 bk | - - - | ![]() | 5010 | 0.00000000 | Central Semiconductor Corp | - - - | Kasten | Veraltet | ± 5% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | CMPZ4101BK | Ear99 | 8541.10.0050 | 3.500 | 1 V @ 200 Ma | 1 µA @ 6,3 V | 8.2 v | 200 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CQ220i-6ms | - - - | ![]() | 9018 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -40 ° C ~ 110 ° C (TJ) | K. Loch | To-220-3 | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 1 | Einzel | 15 Ma | Praktikant Ausgelöst | 600 V | 6 a | 1,5 v | - - - | 10 ma | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CTLDM7003-M621 BK | - - - | ![]() | 2131 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powervfdfn | MOSFET (Metalloxid) | TLM621 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 5.000 | N-Kanal | 50 v | 280 Ma (TA) | 1,8 V, 5 V. | 2OHM @ 50 Ma, 5V | 1V @ 250 ähm | 0,764 NC @ 4,5 V. | 12V | 50 PF @ 25 V. | - - - | 900 MW (TA) | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | CMKZ5243B TR | - - - | ![]() | 5170 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | ± 5% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | 200 MW | SOT-363 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0050 | 3.000 | 3 Unabhängig | 900 mv @ 10 mA | 500 NA @ 9.9 V. | 13 v | 13 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4247 tr | - - - | ![]() | 2440 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Box (TB) | Lets Kaufen | K. Loch | R-1, axial | 1N4247 | Standard | GPR-1A | - - - | UnberÜHrt Ereichen | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,2 V @ 1 a | 5 µs | 1 µa @ 600 V | -65 ° C ~ 200 ° C. | 1a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||
CS202-4d | - - - | ![]() | 2064 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C. | K. Loch | To-202 Long Tab | To-202 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 500 | 2 Ma | 400 V | 4 a | 800 mV | - - - | 200 µA | 1,8 v | Standardwiederherherster | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CZ5360B BK PBFREE | 0,4526 | ![]() | 4995 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | K. Loch | Do-201aa, Do-27, axial | CZ5360 | 5 w | Do-201 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 500 | 1,2 V @ 1 a | 500 NA @ 19 V. | 25 v | 4 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CMOZ10V TR PBFREE | 0,5800 | ![]() | 6 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-79, SOD-523 | CMOZ10 | 300 MW | SOD-523 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 200 na @ 7 V | 10 v | 20 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
CMR2U-02 BK PBFREE | 0,1425 | ![]() | 5653 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | CMR2U-02 | Standard | SMB | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 500 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1 V @ 2 a | 50 ns | 10 µA @ 200 V. | -65 ° C ~ 150 ° C. | 2a | 28PF @ 4V, 1 MHz | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CMOZ16L TR PBFREE | 0,1500 | ![]() | 3361 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-79, SOD-523 | CMOZ16 | 250 MW | SOD-523 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 1 µa @ 14 V | 16 v | 100 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CTLDM8120-M832DS BK | - - - | ![]() | 4694 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TDFN Exponierte Pad | CTLDM8120 | MOSFET (Metalloxid) | 1.65W | Tlm832ds | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | 2 p-kanal (dual) | 20V | 860 mA (TA) | 150 MOHM @ 950 Ma, 4,5 V. | 1V @ 250 ähm | 3,56nc @ 4,5 V | 200pf @ 16v | - - - |
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