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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Anwendungen | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | Spannung - Ausgang | FET -Typ | Stromspannung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Strom Abfluss (ID) - Maximal | Spannung - Offset (VT) | Strom - Tor zu Anodenleckage (Igao) | Strom - tal (iv) | Strom - Peak | Spannung - Anode - Kathode (VAK) (max) | Reglerstrom (max) | Spannung - Begrenzung (max) |
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![]() | SE9300 | - - - | ![]() | 7468 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 70 w | To-220-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 400 | 60 v | 10 a | 200 µA (ICBO) | NPN - Darlington | 2,5 V @ 150 Ma, 7,5a | 100 @ 7,5a, 3V | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | Cll4735d tr | - - - | ![]() | 8586 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | ± 1% | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | Do-213ab, Melf | 1 w | Melf | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0050 | 1.500 | 1,2 V @ 200 Ma | 10 µa @ 3 V | 6.2 v | 2 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | CMDZ3V0 TR PBFREE | 0,7000 | ![]() | 2 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | ± 5% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | SC-76, SOD-323 | CMDZ3 | 250 MW | SOD-323 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 5 µa @ 1 V | 3 v | 95 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4614 BK PBFREE | 0,2190 | ![]() | 9557 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 250 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 2.500 | 1 V @ 200 Ma | 7,5 µa @ 1 V | 1,8 v | 1200 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | CDM22011-600LRFP SL | 2.3400 | ![]() | 580 | 0.00000000 | Central Semiconductor Corp | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | CDM22011 | MOSFET (Metalloxid) | To-220fp | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 11a (TC) | 10V | 360MOHM @ 5.5A, 10V | 4v @ 250 ähm | 23.05 NC @ 10 V | 30V | 763 PF @ 100 V | - - - | 25W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | CMJ2000 TR PBFREE | 6.2800 | ![]() | 1 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | Silziumfeldeffekt | Oberflächenhalterung | SOD-123F | CMJ2000 | 500 MW | SOD-123FL | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 3.000 | 100V | 2.32 Ma | 2,3 v | |||||||||||||||||||||||||||||||||||||||||||||
![]() | CP327V-MPSA27-WN | - - - | ![]() | 5273 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP327 | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP327V-MPSA27-WN | Ear99 | 8541.21.0040 | 1 | 60 v | 500 mA | 500NA | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4385 BK PBFREE | - - - | ![]() | 3480 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | K. Loch | Do-204Al, Do-41, axial | Standard | Do-41 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 1514-1N4385BKPBFREE | Ear99 | 8541.10.0080 | 50 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,1 V @ 1 a | 10 µs | 10 µa @ 600 V | -65 ° C ~ 200 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | CMPP6027R TR | - - - | ![]() | 2536 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | To-236-3, sc-59, SOT-23-3 | Herunterladen | 1 (unbegrenzt) | CMPP6027RTR | Ear99 | 8541.21.0095 | 3.000 | 6v | 40V | 167 MW | 1,6 v | 10 Na | 50 µA | 2 µA | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CTLM7110-M832D BK | - - - | ![]() | 7515 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TDFN Exponierte Pad | MOSFET (Metalloxid) | TLM832d | Herunterladen | 1514-CTLM7110-M832DBK | Ear99 | 8541.29.0095 | 1 | N-Kanal | 20 v | 1a (ta) | 1,5 V, 4,5 V. | 250 MOHM @ 100 Ma, 1,5 V. | 1,2 V @ 1ma | 2,4 NC @ 4,5 V. | 8v | 220 PF @ 10 V | Schottky Diode (Isolier) | 1,65W (TA) | |||||||||||||||||||||||||||||||||||||||||
![]() | CP388X-BC546B-CT | - - - | ![]() | 3885 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP388 | 500 MW | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP388X-BC546B-CT | Ear99 | 8541.21.0095 | 400 | 65 V | 100 ma | 15NA (ICBO) | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | |||||||||||||||||||||||||||||||||||||||||||
![]() | CP210-2N4416A-WN | - - - | ![]() | 3600 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | Sterben | - - - | 1514-CP210-2N4416A-WN | Veraltet | 72.000 | N-Kanal | 35 V | 4pf @ 15V | 35 V | 5 ma @ 20 v | 2,5 V @ 1 na | 15 Ma | |||||||||||||||||||||||||||||||||||||||||||||||
2N2218 PBFREE | 1.2173 | ![]() | 9757 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205ad, bis 39-3 Metall Kann | 3 w | To-39 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 500 | 30 v | 800 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 40 @ 150 mA, 10V | 250 MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | CP216-2N4856-cm | - - - | ![]() | 1149 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Sterben | Sterben | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP216-2N4856-CM | 0000.00.0000 | 400 | N-Kanal | 40 v | 18pf @ 10v | 40 v | 50 mA @ 15 V | 4 V @ 0,5 na | 25 Ohm | 50 ma | |||||||||||||||||||||||||||||||||||||||||||
CBR25-020p | - - - | ![]() | 2191 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, FP | Standard | 4-Case FP | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 100 | 1,2 V @ 12,5 a | 10 µA @ 200 V. | 25 a | Einphase | 200 v | |||||||||||||||||||||||||||||||||||||||||||||||
2N4393 PBFREE | 3.0500 | ![]() | 3 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 1,8 w | To-18 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 14pf @ 20V | 40 v | 5 ma @ 20 v | 500 mV @ 1 na | 100 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4471 BK PBFREE | 0,4815 | ![]() | 3835 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1,5 w | Do-41 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 2.000 | 50 na @ 14.4 v | 18 v | 11 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | PN4302 | - - - | ![]() | 2745 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Verkäfer undefiniert | PN4302Cs | Ear99 | 8541.21.0095 | 2.500 | N-Kanal | - - - | 30 v | 500 µa @ 15 V | 4 V @ 1 na | ||||||||||||||||||||||||||||||||||||||||||||||
1N5926B BK PBFREE | - - - | ![]() | 7871 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1,5 w | Do-41 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.000 | 1,5 V @ 200 Ma | 1 µa @ 8,4 V | 11 v | 6 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CR5-010 tr | - - - | ![]() | 4487 | 0.00000000 | Central Semiconductor Corp | CR5-010 | Band & Rollen (TR) | Veraltet | K. Loch | Do-201ad, axial | Standard | Do-201ad | Herunterladen | 1 (unbegrenzt) | CR5-010TR | Ear99 | 8541.10.0080 | 1.200 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 100 v | 1,2 V @ 5 a | 5 µa @ 100 V. | -65 ° C ~ 150 ° C. | 5a | 50pf @ 4v, 1 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | CBRLD1-08 BK | - - - | ![]() | 2741 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 4-smd, Möwenflügel | Standard | 4-lpdip | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 1 | 1 V @ 1 a | 10 µa @ 800 V | 1 a | Einphase | 800 V | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1n5271b ap | - - - | ![]() | 8917 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Box (TB) | Veraltet | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | 1 (unbegrenzt) | 1N5271BAP | Ear99 | 8541.10.0050 | 1.000 | 1,1 V @ 200 Ma | 100 na @ 76 v | 100 v | 500 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N4853 | - - - | ![]() | 7315 | 0.00000000 | Central Semiconductor Corp | - - - | Kasten | Veraltet | To-206aa, to-18-3 Metalldose | Herunterladen | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | 6v | - - - | 300 MW | 6 Ma | 400 na | |||||||||||||||||||||||||||||||||||||||||||||||||||
2N4948 | - - - | ![]() | 3838 | 0.00000000 | Central Semiconductor Corp | - - - | Kasten | Veraltet | To-206aa, to-18-3 Metalldose | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | 6v | - - - | 2 Ma | 2 µA | |||||||||||||||||||||||||||||||||||||||||||||||||||||
2N4341 | - - - | ![]() | 8992 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 325 MW | To-18 | Herunterladen | Verkäfer undefiniert | 2N4341cs | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 50 v | 6PF @ 15V | 50 v | 3 ma @ 15 v | 2 V @ 100 na | ||||||||||||||||||||||||||||||||||||||||||||||
2N5115 | - - - | ![]() | 2198 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 500 MW | To-18 | Herunterladen | Verkäfer undefiniert | 2N5115cs | Ear99 | 8541.21.0095 | 2.000 | P-Kanal | 30 v | 25pf @ 15V | 30 v | 15 mA @ 15 V | 3 V @ 1 na | 100 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 2n5953 | - - - | ![]() | 4387 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 360 MW | To-92-3 | Herunterladen | Verkäfer undefiniert | 2n5953cs | Ear99 | 8541.21.0095 | 1 | N-Kanal | 6PF @ 15V | 30 v | 2,5 mA @ 15 V | 800 mv @ 100 na | 375 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
BSV79 | - - - | ![]() | 4244 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 350 MW | To-18 | Herunterladen | Verkäfer undefiniert | BSV79CS | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 40 v | 5pf @ 10v | 20 mA @ 15 V | 2 V @ 1 na | 40 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Cll5266b tr | - - - | ![]() | 8209 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | ± 5% | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0050 | 2.500 | 1,25 V @ 200 Ma | 100 na @ 52 v | 68 v | 230 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | CBR4MF-L010 | - - - | ![]() | 4265 | 0.00000000 | Central Semiconductor Corp | - - - | Rohr | Veraltet | - - - | K. Loch | 4-sip, dm | Standard | DM | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 1 | 1,3 V @ 2 a | 10 µa @ 100 V. | 4 a | Einphase | 100 v |
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