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Diskette HalblerProdukte (5717)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHH105N60EF-T1GE3 | 6.8600 |  | 49 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHH105N60EF-T1GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 26a (TC) | 10V | 105mohm @ 13a, 10V | 5 V @ 250 ähm | 50 nc @ 10 v | ± 30 v | 2099 PF @ 100 V | - - - | 174W (TC) | |||
 | SIA4265edj-t1-GE3 | 0,4200 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIA4265edj-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 7.8a (TA), 9A (TC) | 1,8 V, 4,5 V. | 32mohm @ 4a, 4,5 V. | 1V @ 250 ähm | 36 NC @ 8 V | ± 8 v | 1180 PF @ 0 v | - - - | 2,9W (TA), 15,6 W (TC) | |||
 | SISA14BDN-T1-GE3 | 0,7100 | | 14 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | MOSFET (Metalloxid) | Powerpak® 1212-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 21a (ta), 72a (TC) | 4,5 V, 10 V. | 5.38MOHM @ 10a, 10V | 2,2 V @ 250 ähm | 22 NC @ 10 V. | +20V, -16v | 917 PF @ 15 V | - - - | 3,8 W (TA), 45W (TC) | ||||
 | SISS588DN-T1-GE3 | 1.3600 | | 6289 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | MOSFET (Metalloxid) | Powerpak® 1212-8s | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SISS588DN-T1-GE3TR | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 80 v | 16,9a (TA), 58,1a (TC) | 7,5 V, 10 V. | 8mohm @ 10a, 10V | 4v @ 250 ähm | 28,5 NC @ 10 V. | ± 20 V | 1380 PF @ 40 V | - - - | 4,8W (TA), 56,8W (TC) | |||
 | SQJQ184ER-T1_GE3 | 3.6700 | | 451 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powermd, Möwenflügel | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 80 v | 430a (TC) | 10V | 1,4mohm @ 20a, 10V | 3,5 V @ 250 ähm | 240 nc @ 10 v | ± 20 V | 16009 PF @ 25 V. | - - - | 600W (TC) | |||||
 | SI3460BDV-T1-BE3 | 0,9100 | | 48 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-SI3460BDV-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 6.7a (TA), 8a (TC) | 1,8 V, 4,5 V. | 27mohm @ 5.1a, 4,5 V. | 1V @ 250 ähm | 24 nc @ 8 v | ± 8 v | 860 PF @ 10 V | - - - | 2W (TA), 3,5 W (TC) | ||||
 | SI2333DDS-T1-BE3 | 0,4200 | | 2908 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2333DDS-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 5a (ta), 6a (TC) | 1,5 V, 4,5 V. | 28mohm @ 5a, 4,5 V. | 1V @ 250 ähm | 35 nc @ 8 v | ± 8 v | 1275 PF @ 6 V. | - - - | 1,2W (TA), 1,7W (TC) | ||||
 | SIHFR320TRL-GE3 | 0,9600 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-SIHFR320TRL-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 400 V | 3.1a (TC) | 10V | 1,8OHM @ 1,9a, 10 V. | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
 | SQJ454EP-T1_BE3 | 1.3100 | | 6715 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ454EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 13a (TC) | 4,5 V, 10 V. | 145mohm @ 7,5a, 10 V | 2,5 V @ 250 ähm | 85 NC @ 10 V | ± 20 V | 2600 PF @ 25 V. | - - - | 68W (TC) | ||||
| SIHFR320TR-GE3 | 0,8800 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-SIHFR320TR-GE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 400 V | 3.1a (TC) | 10V | 1,8OHM @ 1,9a, 10 V. | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
| SI2301BDS-T1-BE3 | 0,4600 | | 6098 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2301BDS-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 2.2a (TA) | 2,5 V, 4,5 V. | 100MOHM @ 2,8a, 4,5 V. | 950 MV @ 250 ähm | 10 NC @ 4,5 V. | ± 8 v | 375 PF @ 6 V | - - - | 700 MW (TA) | ||||
 | SIHA21N60EF-GE3 | 4.0100 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 9a (TC) | 10V | 176mohm @ 11a, 10V | 4v @ 250 ähm | 84 NC @ 10 V | ± 30 v | 2030 PF @ 100 V | - - - | 35W (TC) | |||||
| SQJ407EP-T1_BE3 | 1.4800 | | 1406 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ407EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 60a (TC) | 4,5 V, 10 V. | 4.4mohm @ 10a, 10V | 2,5 V @ 250 ähm | 260 NC @ 10 V | ± 20 V | 10700 PF @ 25 V. | - - - | 68W (TC) | ||||
 | SIDR668DP-T1-RE3 | 2.9700 | | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | 742-SIDR668DP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 23,2a (TA), 95A (TC) | 7,5 V, 10 V. | 4,8 MOHM @ 20A, 10V | 3,4 V @ 250 ähm | 108 NC @ 10 V | ± 20 V | 5400 PF @ 50 V | - - - | 6,25W (TA), 125W (TC) | ||||
 | SIHFU310-GE3 | 0,6900 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | To-251aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 75 | N-Kanal | 400 V | 1.7a (TC) | 10V | 3,6OHM @ 1a, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 170 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
| SIHA6N65E-GE3 | 2.0400 | | 1 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA6N65E-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 7a (TC) | 10V | 600mohm @ 3a, 10V | 4v @ 250 ähm | 48 nc @ 10 v | ± 30 v | 1640 PF @ 100 V | - - - | 31W (TC) | ||||
 | SI3443DDV-T1-BE3 | 0,4300 | | 5639 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4a (ta), 4a (TC) | 2,5 V, 4,5 V. | 47mohm @ 4,7a, 4,5 V. | 1,5 V @ 250 ähm | 30 NC @ 8 V | ± 12 V | 970 PF @ 10 V. | - - - | 1,7W (TA), 2,7W (TC) | |||||
| SQJA20EP-T1_BE3 | 1.4700 | | 3641 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJA20EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 22,5a (TC) | 7,5 V, 10 V. | 50mohm @ 10a, 10V | 3,5 V @ 250 ähm | 27 NC @ 10 V | ± 20 V | 1300 PF @ 25 V. | - - - | 68W (TC) | ||||
| SI2302CDS-T1-BE3 | 0,4100 | | 2031 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 2.6a (TA) | 2,5 V, 4,5 V. | 57mohm @ 3,6a, 4,5 V. | 850 MV @ 250 ähm | 5,5 NC @ 4,5 V | ± 8 v | - - - | 710 MW (TA) | ||||||
 | SISHA06DN-T1-GE3 | 1.0200 | | 12 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8sh | MOSFET (Metalloxid) | Powerpak® 1212-8sh | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 28.1a (TA), 104a (TC) | 4,5 V, 10 V. | 3mohm @ 10a, 10V | 2,4 V @ 250 ähm | 67 NC @ 10 V | +20V, -16v | 3932 PF @ 15 V | - - - | 3,7W (TA), 52W (TC) | ||||
 | SQ4850CEY-T1_GE3 | 1.0500 | | 8013 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4850CEY-T1_GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 22mohm @ 6a, 10V | 2,5 V @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1375 PF @ 25 V. | - - - | 6.8W (TC) | ||||
 | SIR184LDP-T1-RE3 | 1.5300 | | 40 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 21,5a (TA), 73A (TC) | 4,5 V, 10 V. | 5.4mohm @ 10a, 10V | 3v @ 250 ähm | 41 nc @ 10 v | ± 20 V | 1950 PF @ 30 V | - - - | 5W (TA), 56,8W (TC) | ||||
 | SQS141LNW-T1_GE3 | 1.0300 | | 4391 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® 1212-8slw | MOSFET (Metalloxid) | Powerpak® 1212-8slw | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 40 v | 101a (TC) | 4,5 V, 10 V. | 10mohm @ 10a, 10V | 2,5 V @ 250 ähm | 141 NC @ 10 V | ± 20 V | 7458 PF @ 25 V. | - - - | 192W (TC) | ||||
| SISS22LDN-T1-GE3 | 1.2100 | | 8624 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS22 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SISS22LDN-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 25,5a (TA), 92,5a (TC) | 4,5 V, 10 V. | 3,65 MOHM @ 15a, 10V | 2,5 V @ 250 ähm | 56 NC @ 10 V | ± 20 V | 2540 PF @ 30 V | - - - | 5W (TA), 65,7W (TC) | ||
 | SISA35DN-T1-GE3 | 0,5200 | | 13 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen III | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | Sisa35 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 10a (ta), 16a (TC) | 4,5 V, 10 V. | 19Mohm @ 9a, 10V | 2,2 V @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 1500 PF @ 15 V | - - - | 3.2W (TA), 24W (TC) | |||
| SI7116BDN-T1-GE3 | 1.1600 | | 5 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SI7116 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 18,4a (TA), 65A (TC) | 7.4mohm @ 16a, 10V | 2,5 V @ 250 ähm | 48 nc @ 10 v | ± 20 V | 1915 PF @ 20 V | - - - | 5W (TA), 62,5W (TC) | |||||
 | IRFB9N60APBF-BE3 | 3.0800 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFB9 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFB9N60APBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 9.2a (TC) | 750MOHM @ 5.5A, 10V | 4v @ 250 ähm | 49 NC @ 10 V. | ± 30 v | 1400 PF @ 25 V. | - - - | 170W (TC) | ||||
 | IRFR110TRLPBF-BE3 | 1.3900 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR110 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 4.3a (TC) | 540MOHM @ 2,6a, 10V | 4v @ 250 ähm | 8.3 NC @ 10 V | ± 20 V | 180 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
 | IRFL014TRPBF-BE3 | 0,9400 | | 8923 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | IRFL014 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 2.7a (TC) | 200mohm @ 1,6a, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 300 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | |||||
 | SI1499DH-T1-BE3 | 0,6700 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1499 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 742-SI1499DH-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 1,6a (TA), 1,6a (TC) | 78mohm @ 2a, 4,5 V. | 800 MV @ 250 ähm | 16 NC @ 4,5 V | ± 5 V | 650 PF @ 4 V. | - - - | 2,5 W (TA), 2,78W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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