Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Spannung - Bewort | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Frequenz | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Aktuelle Bewertung (Verstärker) | Strom - Hold (ih) (max) | Strom - Test | Leistung - Ausgang | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Triactyp | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Spannung - Gate Trigger (VGT) (max) | Strom - nicht -rep. Surge 50, 60 Hz (ITSM) | Strom - Gate Trigger (IGT) (max) | RAUSCHFIGUR | Spannung - vorwärts (vf) (max) @ if | Strom - reverse -lockage @ vr | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Spannung - Test | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | MRF373AlR1 | - - - | ![]() | 4883 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | 70 V | Chassis -berg | Ni-360 | MRF37 | 860 MHz | Ldmos | Ni-360 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 500 | - - - | 200 ma | 75W | 18.2db | - - - | 32 v | ||||||||||||||||||||||||||||||||||||||||||
![]() | BLF1820-90,112 | - - - | ![]() | 4535 | 0.00000000 | NXP USA Inc. | - - - | Rohr | Veraltet | 65 V | Chassis -berg | SOT-502A | BLF18 | 2GHz | Ldmos | Ldsten | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 60 | 12a | 750 Ma | 90W | 11db | - - - | 26 v | ||||||||||||||||||||||||||||||||||||||||||
![]() | MRF6v2300NR1 | - - - | ![]() | 7766 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | 110 v | Oberflächenhalterung | To-270ab | MRF6 | 220 MHz | Ldmos | To-270 WB-4 | Herunterladen | Rohs Nick Konform | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 500 | - - - | 900 Ma | 300W | 25,5 dB | - - - | 50 v | ||||||||||||||||||||||||||||||||||||||||||
![]() | MPSA42,116 | - - - | ![]() | 6226 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | MPSA42 | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | 300 V | 100 ma | 100NA (ICBO) | Npn | 500 mv @ 2MA, 20 mA | 40 @ 30 ma, 10V | 50 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | PHK24NQ04LT, 518 | - - - | ![]() | 1983 | 0.00000000 | NXP USA Inc. | Trenchmos ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | PHK24 | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | 2 (1 Jahr) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 21,2a (TC) | 4,5 V, 10 V. | 7.7Mohm @ 14a, 10V | 2V @ 1ma | 64 NC @ 10 V | ± 20 V | 2985 PF @ 25 V. | - - - | 6.25W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | BUK9608-55,118 | - - - | ![]() | 2196 | 0.00000000 | NXP USA Inc. | Trenchmos ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | BUK96 | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 75a (TC) | 5v | 8mohm @ 25a, 5V | 2V @ 1ma | ± 10 V | 6900 PF @ 25 V. | - - - | 187W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | PEMH16,115 | - - - | ![]() | 7278 | 0.00000000 | NXP USA Inc. | * | Schüttgut | Aktiv | PEMH1 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 4.000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX79-B24143 | 0,0200 | ![]() | 124 | 0.00000000 | NXP USA Inc. | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8541.10.0050 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PEMB10115 | - - - | ![]() | 9249 | 0.00000000 | NXP USA Inc. | Automobil, AEC-Q101 | Schüttgut | Aktiv | Oberflächenhalterung | SOT-563, SOT-666 | PEMB10 | 300 MW | SOT-666 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 50V | 100 ma | 1 µA | 2 PNP Voreeinnensmen (Dual) | 100 mv @ 250 ua, 5 mA | 100 @ 10ma, 5V | - - - | 2.2ko | 47kohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | BZB84-C51,215 | 1.0000 | ![]() | 8231 | 0.00000000 | NXP USA Inc. | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BZB84-C51 | 300 MW | To-236ab | Herunterladen | 0000.00.0000 | 1 | 1 Paar -Gemeinsamer -Anode | 900 mv @ 10 mA | 50 NA @ 35.7 V. | 51 v | 180 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
PSMN012-25YLC, 115 | - - - | ![]() | 1882 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SC-100, SOT-669 | PSMN0 | MOSFET (Metalloxid) | LFPAK56, Power-SO8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.500 | N-Kanal | 25 v | 33a (TC) | 4,5 V, 10 V. | 12,6 MOHM @ 10a, 10V | 1,95 V @ 1ma | 8.3 NC @ 10 V | ± 20 V | 528 PF @ 12 V | - - - | 26W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | Pzm3,6nb2,115 | - - - | ![]() | 8384 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | ± 2% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | PZM3.6 | 300 MW | SMT3; Mpak | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 1,1 V @ 100 mA | 5 µa @ 1 V | 3.6 V | 90 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MMRF1013HR5 | - - - | ![]() | 6834 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | 65 V | Chassis -berg | SOT-979A | MMRF1013 | 2,9 GHz | Ldmos | NI-1230-4H | - - - | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | 935322103178 | Ear99 | 8541.29.0075 | 50 | Dual | - - - | 100 ma | 320W | 13.3db | - - - | 30 v | ||||||||||||||||||||||||||||||||||||||||
![]() | BT131-800D, 112 | 0,1200 | ![]() | 10 | 0.00000000 | NXP USA Inc. | - - - | Schüttgut | Aktiv | 125 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | To-92-3 | Herunterladen | Ear99 | 8541.30.0080 | 2,404 | Einzel | 5 Ma | Logik - Sensitive Gate | 800 V | 1 a | 1,5 v | 12,5a, 13,8a | 3 ma | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | PHB222NQ04LT, 118 | - - - | ![]() | 4382 | 0.00000000 | NXP USA Inc. | Trenchmos ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | PHB22 | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 75a (TC) | 4,5 V, 10 V. | 2,8 MOHM @ 25a, 10V | 2V @ 1ma | 93.6 NC @ 5 V. | ± 15 V | 7880 PF @ 25 V. | - - - | 300 W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | PDTA113ZM315 | 0,0200 | ![]() | 20 | 0.00000000 | NXP USA Inc. | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8542.21.0095 | 15.000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PSMN8R0-30LYC115 | 1.0000 | ![]() | 3272 | 0.00000000 | NXP USA Inc. | * | Schüttgut | Aktiv | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0075 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S18125AHSR5 | - - - | ![]() | 6379 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | 65 V | Chassis -berg | NI-780s | MRF7 | 1,88 GHz | Ldmos | NI-780s | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 50 | - - - | 1.1 a | 125W | 17db | - - - | 28 v | |||||||||||||||||||||||||||||||||||||||||||
![]() | BZX84J-B3V0,115 | 0,0300 | ![]() | 32 | 0.00000000 | NXP USA Inc. | Automobil, AEC-Q101 | Schüttgut | Aktiv | ± 2% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 550 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,1 V @ 100 mA | 10 µa @ 1 V | 3 v | 95 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AFV09P350-04NR3 | 88.9166 | ![]() | 2616 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Aktiv | 105 V | Oberflächenhalterung | OM-780-4L | AFV09 | 920 MHz | Ldmos | OM-780-4L | - - - | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | 935322054528 | 5a991g | 8541.29.0040 | 250 | Dual | - - - | 860 Ma | 100W | 19.5db | - - - | 48 v | ||||||||||||||||||||||||||||||||||||||||
![]() | BFQ67W, 135 | - - - | ![]() | 8779 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | 175 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | BFQ67 | 300 MW | SC-70 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 934021070135 | Ear99 | 8541.21.0075 | 10.000 | - - - | 10V | 50 ma | Npn | 60 @ 15ma, 5V | 8GHz | 1,3 db ~ 3 dB @ 1GHz ~ 2GHz | |||||||||||||||||||||||||||||||||||||||||
![]() | 2pc1815bl, 126 | - - - | ![]() | 4036 | 0.00000000 | NXP USA Inc. | - - - | Band & Box (TB) | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 2pc18 | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | 50 v | 150 Ma | 100NA (ICBO) | Npn | 300mv @ 10 mA, 100 mA | 350 @ 2MA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | PZM3.9NB, 115 | - - - | ![]() | 9779 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | PZM3.9 | 300 MW | SMT3; Mpak | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 1,1 V @ 100 mA | 3 µa @ 1 V | 3,9 v | 90 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | PDTA123TMB, 315 | 0,0200 | ![]() | 110 | 0.00000000 | NXP USA Inc. | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-101, SOT-883 | PDTA123 | 250 MW | DFN1006B-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 50 v | 100 ma | 1 µA | PNP - VoreInensmen | 150 mV @ 500 µA, 10 mA | 30 @ 20 Ma, 5V | 180 MHz | 2.2 Kohms | |||||||||||||||||||||||||||||||||||||||||||||
![]() | PMBFJ110,215 | - - - | ![]() | 2273 | 0.00000000 | NXP USA Inc. | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | PMBFJ1 | 250 MW | SOT-23 (to-236ab) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 25 v | 30pf @ 10v (VGS) | 25 v | 10 mA @ 15 V | 4 V @ 1 µA | 18 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | BCW66G215 | 1.0000 | ![]() | 5035 | 0.00000000 | NXP USA Inc. | * | Schüttgut | Aktiv | Herunterladen | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PHB176NQ04T, 118 | - - - | ![]() | 2086 | 0.00000000 | NXP USA Inc. | Trenchmos ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | PHB17 | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 75a (TC) | 10V | 4,3 Mohm @ 25a, 10V | 4v @ 1ma | 68,9 NC @ 10 V. | ± 20 V | 3620 PF @ 25 V. | - - - | 250 W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | PBSS305PZ, 135 | 0,2100 | ![]() | 6 | 0.00000000 | NXP USA Inc. | * | Schüttgut | Aktiv | PBSS3 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 4.000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2pb710asl/zlr | - - - | ![]() | 6880 | 0.00000000 | NXP USA Inc. | * | Band & Rollen (TR) | Veraltet | 2pb71 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PDTC123TMB, 315 | 0,0300 | ![]() | 100 | 0.00000000 | NXP USA Inc. | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-101, SOT-883 | PDTC123 | 250 MW | DFN1006B-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 50 v | 100 ma | 1 µA | NPN - VORGEPANNT | 150 mV @ 500 µA, 10 mA | 30 @ 20 Ma, 5V | 230 MHz | 2.2 Kohms |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus