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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Technologie LEEFERANTENGERATEPAKET Datenblatt Andere Namen Eccn Htsus Standardpaket FET -Typ ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max)
ICE20N170B IceMOS Technology ICE20N170B - - -
RFQ
ECAD 6280 0.00000000 Icemos -technologie - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 leitete + tab) variante MOSFET (Metalloxid) To-263 Herunterladen 5133-ICE20N170BTR Ear99 8541.29.0095 1 N-Kanal 600 V 20A (TC) 10V 199mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 236W (TC)
ICE60N330 IceMOS Technology ICE60N330 - - -
RFQ
ECAD 5415 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE60N330 Ear99 8541.29.0095 1 N-Kanal 600 V 12a (TC) 10V 330mohm @ 5a, 10V 3,9 V @ 250 ähm 43 NC @ 10 V ± 20 V 1250 PF @ 25 V. - - - 95W (TC)
ICE22N60 IceMOS Technology ICE22N60 - - -
RFQ
ECAD 8577 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE22N60 Ear99 8541.29.0095 1 N-Kanal 600 V 22a (TC) 10V 160Mohm @ 11a, 10V 3,9 V @ 250 ähm 72 NC @ 10 V ± 20 V 2730 PF @ 25 V. - - - 208W (TC)
ICE10N60FP IceMOS Technology ICE10N60FP 1.7300
RFQ
ECAD 500 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220 Full Pack Herunterladen 5133-ICE10N60FP Ear99 8541.29.0095 50 N-Kanal 600 V 10a (TC) 10V 330mohm @ 5a, 10V 3,9 V @ 250 ähm 41 nc @ 10 v ± 20 V 1250 PF @ 25 V. - - - 35W (TC)
ICE15N60W IceMOS Technology ICE15N60W - - -
RFQ
ECAD 4099 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 Herunterladen 5133-ICE15N60W Ear99 8541.29.0095 1 N-Kanal 600 V 15a (TC) 10V 250 MOHM @ 7,5a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 156W (TC)
ICE47N60W IceMOS Technology ICE47N60W 7.8400
RFQ
ECAD 2 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 Herunterladen 5133-Ice47N60W Ear99 8541.29.0095 30 N-Kanal 600 V 47a (TC) 10V 68mohm @ 24a, 10V 3,9 V @ 250 ähm 189 NC @ 10 V ± 20 V 5718 PF @ 25 V. - - - 431W (TC)
ICE60N130 IceMOS Technology ICE60N130 3.2000
RFQ
ECAD 150 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE60N130 Ear99 8541.29.0095 50 N-Kanal 600 V 25a (TC) 10V 150 MOHM @ 13A, 10V 3,5 V @ 250 ähm 72 NC @ 10 V ± 20 V 2730 PF @ 25 V. - - - 208W (TC)
ICE10N65 IceMOS Technology ICE10N65 - - -
RFQ
ECAD 2882 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-Ice10N65 Ear99 8541.29.0095 1 N-Kanal 650 V 9,5a (TC) 10V 380MOHM @ 4,75A, 10V 3,9 V @ 250 ähm 41 nc @ 10 v ± 20 V 1277 PF @ 25 V. - - - 95W (TC)
ICE20N60B IceMOS Technology ICE20N60B 2.4600
RFQ
ECAD 5 0.00000000 Icemos -technologie - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 leitete + tab) variante MOSFET (Metalloxid) To-263 Herunterladen 5133-ICE20N60BTR Ear99 8541.29.0095 800 N-Kanal 600 V 20A (TC) 10V 190mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 236W (TC)
ICE20N170 IceMOS Technology ICE20N170 - - -
RFQ
ECAD 3993 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE20N170 Ear99 8541.29.0095 1 N-Kanal 600 V 20A (TC) 10V 199mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 236W (TC)
ICE11N70 IceMOS Technology ICE11N70 - - -
RFQ
ECAD 3600 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE11N70 Ear99 8541.29.0095 1 N-Kanal 700 V 11a (TC) 10V 25mo @ 5.5a, 10V 3,5 V @ 250 ähm 85 NC @ 10 V ± 20 V 2750 PF @ 25 V. - - - 108W (TC)
ICE20N60W IceMOS Technology ICE20N60W 2.9900
RFQ
ECAD 990 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 Herunterladen 5133-ICE20N60W Ear99 8541.29.0095 30 N-Kanal 600 V 20A (TC) 10V 190mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 236W (TC)
ICE60N130FP IceMOS Technology ICE60N130FP 3.1700
RFQ
ECAD 500 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE60N130FP Ear99 8541.29.0095 50 N-Kanal 600 V 25a (TC) 10V 150 MOHM @ 13A, 10V 3,5 V @ 250 ähm 72 NC @ 10 V ± 20 V 2730 PF @ 25 V. - - - 50W (TC)
ICE20N60FP IceMOS Technology ICE20N60FP 2.4700
RFQ
ECAD 14 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE20N60FP Ear99 8541.29.0095 50 N-Kanal 600 V 20A (TC) 10V 190mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 35W (TC)
ICE30N60W IceMOS Technology ICE30N60W - - -
RFQ
ECAD 2563 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 Herunterladen 5133-ICE30N60W Ear99 8541.29.0095 1 N-Kanal 600 V 30a (TC) 10V 68mohm @ 15a, 10V 3,9 V @ 250 ähm 189 NC @ 10 V ± 20 V 6090 PF @ 25 V. - - - 171W (TC)
ICE10N60 IceMOS Technology ICE10N60 1.7700
RFQ
ECAD 500 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE10N60 Ear99 8541.29.0095 50 N-Kanal 600 V 10a (TC) 10V 330mohm @ 5a, 10V 3,9 V @ 250 ähm 43 NC @ 10 V ± 20 V 1250 PF @ 25 V. - - - 95W (TC)
ICE20N60 IceMOS Technology ICE20N60 2.5100
RFQ
ECAD 16 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE20N60 Ear99 8541.29.0095 50 N-Kanal 600 V 20A (TC) 10V 190mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 236W (TC)
ICE11N70FP IceMOS Technology ICE11N70FP - - -
RFQ
ECAD 8583 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE11N70FP Ear99 8541.29.0095 1 N-Kanal 700 V 11a (TC) 10V 270 MOHM @ 5,5A, 10V 3,5 V @ 250 ähm 81 NC @ 10 V ± 20 V 2816 PF @ 100 V - - - 35W (TC)
ICE10N73FP IceMOS Technology ICE10N73FP - - -
RFQ
ECAD 8437 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220 Full Pack Herunterladen 5133-ICE10N73FP Ear99 8541.29.0095 1 N-Kanal 730 V 10a (TC) 10V 350Mohm @ 5a, 10V 3,5 V @ 250 ähm 81 NC @ 10 V ± 20 V 2624 PF @ 25 V. - - - 35W (TC)
ICE15N60 IceMOS Technology ICE15N60 - - -
RFQ
ECAD 1866 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-ICE15N60 Ear99 8541.29.0095 1 N-Kanal 600 V 15a (TC) 10V 250 MOHM @ 7,5a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 156W (TC)
ICE10N60B IceMOS Technology ICE10N60B - - -
RFQ
ECAD 6400 0.00000000 Icemos -technologie - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 leitete + tab) variante MOSFET (Metalloxid) To-263 Herunterladen 5133-ICE10N60BTR Ear99 8541.29.0095 1 N-Kanal 600 V 10a (TC) 10V 330mohm @ 5a, 10V 3,9 V @ 250 ähm 43 NC @ 10 V ± 20 V 1250 PF @ 25 V. - - - 95W (TC)
ICE20N170FP IceMOS Technology ICE20N170FP - - -
RFQ
ECAD 5830 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE20N170FP Ear99 8541.29.0095 1 N-Kanal 600 V 20A (TC) 10V 199mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 35W (TC)
ICE15N60FP IceMOS Technology ICE15N60FP 2.4700
RFQ
ECAD 1 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE15N60FP Ear99 8541.29.0095 50 N-Kanal 600 V 15a (TC) 10V 250 MOHM @ 7,5a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 35W (TC)
ICE60N130W IceMOS Technology ICE60N130W - - -
RFQ
ECAD 4150 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 Herunterladen 5133-ICE60N130W Ear99 8541.29.0095 1 N-Kanal 600 V 25a (TC) 10V 150 MOHM @ 13A, 10V 3,5 V @ 250 ähm 72 NC @ 10 V ± 20 V 2730 PF @ 25 V. - - - 208W (TC)
ICE22N60B IceMOS Technology ICE22N60B - - -
RFQ
ECAD 4472 0.00000000 Icemos -technologie - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 leitete + tab) variante MOSFET (Metalloxid) To-263 Herunterladen 5133-ICE22N60BTR Ear99 8541.29.0095 1 N-Kanal 600 V 22a (TC) 10V 160Mohm @ 11a, 10V 3,9 V @ 250 ähm 72 NC @ 10 V ± 20 V 2730 PF @ 25 V. - - - 208W (TC)
ICE15N73FP IceMOS Technology ICE15N73FP 3.3900
RFQ
ECAD 150 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE15N73FP Ear99 8541.29.0095 50 N-Kanal 730 V 15a (TC) 10V 350MOHM @ 7.5A, 10V 3,5 V @ 250 ähm 75 NC @ 10 V ± 20 V 2816 PF @ 100 V - - - 35W (TC)
ICE19N60L IceMOS Technology ICE19N60L - - -
RFQ
ECAD 2962 0.00000000 Icemos -technologie - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 4-Powertsfn MOSFET (Metalloxid) 4-DFN (8x8) Herunterladen 5133-ICE19N60LTR Ear99 8541.29.0095 1 N-Kanal 600 V 19A (TC) 10V 220MOHM @ 9.5A, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 236W (TC)
ICE60N330FP IceMOS Technology ICE60N330FP - - -
RFQ
ECAD 9157 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE60N330FP Ear99 8541.29.0095 1 N-Kanal 600 V 12a (TC) 10V 330mohm @ 5a, 10V 3,9 V @ 250 ähm 43 NC @ 10 V ± 20 V 1250 PF @ 25 V. - - - 35W (TC)
ICE20N60EFP IceMOS Technology ICE20N60EFP 2.4800
RFQ
ECAD 900 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte MOSFET (Metalloxid) To-220fp Herunterladen 5133-ICE20N60EFP Ear99 8541.29.0095 50 N-Kanal 600 V 20A (TC) 10V 190mohm @ 10a, 10V 3,9 V @ 250 ähm 59 NC @ 10 V ± 20 V 2064 PF @ 25 V. - - - 35W (TC)
ICE10N73 IceMOS Technology ICE10N73 - - -
RFQ
ECAD 2437 0.00000000 Icemos -technologie - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen 5133-Ice10N73 Ear99 8541.29.0095 1 N-Kanal 730 V 10a (TC) 10V 350Mohm @ 5a, 10V 3,5 V @ 250 ähm 81 NC @ 10 V ± 20 V 2624 PF @ 25 V. - - - 208W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus