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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Kapazitätsverhöltnis | Kapazitätsverhöltnis | Q @ vr, f |
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![]() | FXS09 | - - - | ![]() | 2405 | 0.00000000 | Onsemi | * | Rohr | Veraltet | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-FXS09 | Ear99 | 8541.10.0050 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Nthl067n65s3h | 9.5500 | ![]() | 442 | 0.00000000 | Onsemi | Superfet® III | Rohr | Nicht für Designs | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | 488-nthl067N65S3H | Ear99 | 8541.29.0095 | 30 | N-Kanal | 650 V | 40a (TC) | 10V | 67mohm @ 20a, 10V | 4v @ 3,9 mA | 80 nc @ 10 v | ± 30 v | 3750 PF @ 400 V | - - - | 266W (TC) | |||||||||||||||||||||||||||||||
![]() | NTP165N65S3H | 4.4800 | ![]() | 543 | 0.00000000 | Onsemi | Superfet® III | Rohr | Nicht für Designs | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | 488-NTP165N65S3H | Ear99 | 8541.29.0095 | 50 | N-Kanal | 650 V | 19A (TC) | 10V | 165mohm @ 9.5a, 10V | 4v @ 1,6 mA | 35 NC @ 10 V | ± 30 v | 1808 PF @ 400 V | - - - | 142W (TC) | |||||||||||||||||||||||||||||||
![]() | NVTFS8D1N08HTAG | 1.3000 | ![]() | 6564 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-WDFN (3,3x3,3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-NVTFS8D1N08HTAGTR | Ear99 | 8541.29.0095 | 1.500 | N-Kanal | 80 v | 14A (TA), 61A (TC) | 6 V, 10V | 8.3mohm @ 16a, 10V | 4V @ 270 ua | 23 NC @ 10 V | ± 20 V | 1450 PF @ 40 V | - - - | 3,8 W (TA), 75 W (TC) | |||||||||||||||||||||||||||||||
![]() | FDWS86381-F085 | - - - | ![]() | 2367 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-FDWS86381-F085TR | 3.000 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PCFG75N60SMF | - - - | ![]() | 4969 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | - - - | ROHS3 -KONFORM | UnberÜHrt Ereichen | 488-PCFG75N60SMFTR | Veraltet | 2.500 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NXH50M65L4C2SG | 71.7400 | ![]() | 1484 | 0.00000000 | Onsemi | - - - | Rohr | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | 27-Powerdip-Modul (1.858 ", 47,20 mm) | 20 MW | Einphasenbrückenreichrichter | 27-DIP | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | 488-NXH50M65L4C2SG | Ear99 | 8541.29.0095 | 6 | Drei -Phase -wechselrichter | - - - | 650 V | 50 a | 2,2 V @ 15V, 75A | 250 µA | Ja | 4.877 NF @ 20 V | |||||||||||||||||||||||||||||||||
NZ8F4V3SMX2WT5G | 0,0456 | ![]() | 4387 | 0.00000000 | Onsemi | NZ8F | Band & Rollen (TR) | Aktiv | ± 3,37% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | 2-xdfn | 250 MW | 2-X2DFNW (1x0.6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-NZ8F4V3SMX2WT5GTR | Ear99 | 8541.10.0050 | 8.000 | 900 mv @ 10 mA | 5 µa @ 1 V | 4.3 v | 100 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | NSR2030QMUTWG | 0,4589 | ![]() | 1173 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | 125 ° C (TJ) | Oberflächenhalterung | 4-udfn exponiert pad | Schottky | 4-udfn (3,5x3,5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-NSR2030QMUTWGTR | Ear99 | 8541.10.0080 | 3.000 | 650 mV @ 2 a | 20 µa @ 30 V | 2 a | Einphase | 30 v | |||||||||||||||||||||||||||||||||||||
![]() | NVLJWS022N06Cltag | 0,3079 | ![]() | 3 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | 6-Powerwdfn | NVLJWS022 | MOSFET (Metalloxid) | 6-WDFNW (2.05x2.05) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-NVLJWS022N06ClTAGTR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 7.2a (TA), 25a (TC) | 4,5 V, 10 V. | 21mohm @ 8a, 10V | 2v @ 77 ähm | 7.6 NC @ 10 V | ± 20 V | 440 PF @ 25 V. | - - - | 2,4 W (TA), 28 W (TC) | ||||||||||||||||||||||||||||||
![]() | NXH800A100L4Q2F2S2G | 130.4500 | ![]() | 3321 | 0.00000000 | Onsemi | - - - | Tablett | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Modul | NXH800 | 714 w | Standard | 51-PIM/Q2Pack (93x47) | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | 488-NXH800A100L4Q2F2S2G | Ear99 | 8541.29.0095 | 36 | Drei -Level -Wechselrichter | TRABENFELD STOPP | 1000 v | 309 a | 2,3 V @ 15V, 400a | 20 µA | Ja | 49.7 NF @ 20 V. | ||||||||||||||||||||||||||||||||
![]() | NRVB2045MFST3G | - - - | ![]() | 1516 | 0.00000000 | Onsemi | - - - | Schüttgut | Lets Kaufen | NRVB2045 | - - - | 488-NRVB2045MFST3G | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PCRKA20065F8M1 | - - - | ![]() | 9083 | 0.00000000 | Onsemi | - - - | Schüttgut | Lets Kaufen | PCRKA20065 | - - - | 488-PCRKA20065F8M1 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EFC4601-m-tr | - - - | ![]() | 2152 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C. | Oberflächenhalterung | 4-UFBGA, FCBGA | MOSFET (Metalloxid) | 1.6W (TA) | EFCP1818-4CA-055 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-efc4601-m-tr-488 | 1 | 2 N-Kanal | 24 v | 6a (ta) | 44mohm @ 3a, 4,5 V. | 1,3 V @ 1ma | 8.1nc @ 10v | 950pf @ 10v | - - - | ||||||||||||||||||||||||||||||||||||
![]() | CPH3407-TL-E | - - - | ![]() | 8778 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-CPH3407-TL-E-488 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MCH6635-TL-E | - - - | ![]() | 1663 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C. | Oberflächenhalterung | 6-smd, Flache Leitungen | MOSFET (Metalloxid) | 6-mcph | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-MCH6635-TL-E-488 | 1 | P-Kanal | 20 v | 800 mA (TA) | 2,5 V, 4 V. | 900mohm @ 400 mA, 4V | 1,3 V @ 100 µA | 1,18 NC @ 4 V. | ± 10 V | 76 PF @ 10 V | - - - | 800 MW (TA) | ||||||||||||||||||||||||||||||||||
![]() | FDFMA3P029Z | - - - | ![]() | 2515 | 0.00000000 | Onsemi | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | FDFMA3 | MOSFET (Metalloxid) | 6-mlp (2x2) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 3.3a (ta) | 87mohm @ 3.3a, 10V | 3v @ 250 ähm | 10 nc @ 10 v | 435 PF @ 15 V | Schottky Diode (Isolier) | 1.4W (TA) | |||||||||||||||||||||||||||||||||
![]() | MCH6627-TL-E | - - - | ![]() | 9291 | 0.00000000 | Onsemi | * | Schüttgut | Veraltet | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-MCH6627-TL-E-488 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SVC707-AL | - - - | ![]() | 8854 | 0.00000000 | Onsemi | * | Schüttgut | Veraltet | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-SVC707-AL-488 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NVHL020N090SC1 | 47.7200 | ![]() | 307 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | NVHL020 | Sicfet (Silziumkarbid) | To-247-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-NVHL020N090SC1 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 900 V | 118a (TC) | 15 v | 28mohm @ 60a, 15V | 4,3 V @ 20 mA | 196 NC @ 15 V | +19V, -10 V. | 4415 PF @ 450 V | - - - | 503W (TC) | ||||||||||||||||||||||||||||||
![]() | NVTFS014P04M8LTAG | 1.0500 | ![]() | 6 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | NVTFS014 | MOSFET (Metalloxid) | 8-WDFN (3,3x3,3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.500 | P-Kanal | 40 v | 11,3a (TA), 49A (TC) | 4,5 V, 10 V. | 13,8 MOHM @ 15a, 10V | 2,4 V @ 420 µA | 26,5 NC @ 10 V. | ± 20 V | 1734 PF @ 20 V. | - - - | 3.2W (TA), 61W (TC) | |||||||||||||||||||||||||||||||
![]() | Nthl020n090Sc1 | 41.1400 | ![]() | 3911 | 0.00000000 | Onsemi | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | Nthl020 | Sicfet (Silziumkarbid) | To-247-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | N-Kanal | 900 V | 118a (TC) | 15 v | 28mohm @ 60a, 15V | 4,3 V @ 20 mA | 196 NC @ 15 V | +19V, -10 V. | 4415 PF @ 450 V | - - - | 503W (TC) | |||||||||||||||||||||||||||||||
![]() | AFGB30T65SQDN | 4.7600 | ![]() | 9835 | 0.00000000 | Onsemi | Automotive, AEC-Q101, EcoSospark® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | AFGB30 | Standard | 220 w | D²pak-3 (to-263-3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | 400 V, 30a, 6OHM, 15 V. | 245 ns | - - - | 650 V | 60 a | 120 a | 2,1 V @ 15V, 30a | - - - | 56 NC | 14,5ns/63,2ns | |||||||||||||||||||||||||||||||
![]() | SVC389-TL-E | 0,5300 | ![]() | 112 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SC-96 | 3-cph | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 3.000 | 24PF @ 8v, 1 MHz | 1 Paar Gemeinsamer Kathode | 16 v | 19.5 | C1/C8 | 200 @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | NTD2955-001 | - - - | ![]() | 8005 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | NTD29 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 75 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | DBA500G | - - - | ![]() | 6696 | 0.00000000 | Onsemi | - - - | Tablett | Veraltet | 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | DBA5 | Standard | - - - | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 25 a | 10 µa @ 600 V | 50 a | Einphase | 600 V | ||||||||||||||||||||||||||||||||||||||
![]() | Dbd10g-e | - - - | ![]() | 9641 | 0.00000000 | Onsemi | - - - | Klebeband (CT) Schneiden | Veraltet | 150 ° C (TJ) | K. Loch | 4-DIP (0,300 ", 7,62 mm) | DBD1 | Standard | - - - | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 70 | 1,05 V @ 500 mA | 10 µa @ 600 V | 1 a | Einphase | 600 V | ||||||||||||||||||||||||||||||||||||||
![]() | FGHL75T65MQDTL4 | 6.9100 | ![]() | 450 | 0.00000000 | Onsemi | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-4 | Standard | 375 w | To-247-4l | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | 488-fghl75t65mqdtl4 | Ear99 | 8541.29.0095 | 30 | 400 V, 75A, 10OHM, 15 V. | 107 ns | TRABENFELD STOPP | 650 V | 80 a | 300 a | 1,8 V @ 15V, 75A | 1,2mj (on), 1,1mj (AUS) | 149 NC | 32ns/181ns | |||||||||||||||||||||||||||||||
![]() | FQA44N10 | - - - | ![]() | 8971 | 0.00000000 | Onsemi | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Fqa4 | MOSFET (Metalloxid) | To-3p | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | N-Kanal | 100 v | 48a (TC) | 10V | 39mohm @ 24a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 25 V | 1800 PF @ 25 V. | - - - | 180W (TC) | ||||||||||||||||||||||||||||||||
![]() | FDS2672 | 1.9700 | ![]() | 7723 | 0.00000000 | Onsemi | Ultrafet ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS26 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 200 v | 3.9a (TA) | 6 V, 10V | 70 MOHM @ 3,9a, 10V | 4v @ 250 ähm | 46 NC @ 10 V | ± 20 V | 2535 PF @ 100 V | - - - | 2,5 W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus