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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | NTD60N03-001 | - - - | ![]() | 1734 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | NTD60 | MOSFET (Metalloxid) | I-Pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 75 | N-Kanal | 28 v | 60a (TC) | 4,5 V, 10 V. | 7.5Mohm @ 30a, 10V | 3v @ 250 ähm | 30 NC @ 4,5 V. | ± 20 V | 2150 PF @ 24 V | - - - | 75W (TC) | |||||||||||||||||||||||||||||||
![]() | NTMFS5C646NLT3G | 1.1506 | ![]() | 1804 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn, 5 Leads | NTMFS5 | MOSFET (Metalloxid) | 5-DFN (5x6) (8-SoFL) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 60 v | 20A (TA), 93A (TC) | 4,5 V, 10 V. | 4.7mohm @ 50a, 10V | 2v @ 250 ähm | 33.7 NC @ 10 V. | ± 20 V | 2164 PF @ 25 V. | - - - | 3.7W (TA), 79W (TC) | |||||||||||||||||||||||||||||||
![]() | FDC3616N | - - - | ![]() | 6707 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-SSOT Flat-Lead, Supersot ™ -6 FLMP | FDC3616 | MOSFET (Metalloxid) | Supersot ™ -6 FLMP | Herunterladen | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 3.7a (ta) | 6 V, 10V | 70 MOHM @ 3,7a, 10V | 4v @ 250 ähm | 32 NC @ 10 V | ± 20 V | 1215 PF @ 50 V | - - - | 2W (TA) | ||||||||||||||||||||||||||||||||
![]() | FDFMA2N028Z | 0,7000 | ![]() | 464 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDFMA2 | MOSFET (Metalloxid) | 6-microfet (2x2) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 3.7a (ta) | 2,5 V, 4,5 V. | 68mohm @ 3,7a, 4,5 V. | 1,5 V @ 250 ähm | 6 NC @ 4,5 V. | ± 12 V | 455 PF @ 10 V. | Schottky Diode (Isolier) | 1.4W (TJ) | |||||||||||||||||||||||||||||||
![]() | SSVR416HT1 | 0,1500 | ![]() | 117 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0050 | 3.000 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTMFS5C450NLT3G | - - - | ![]() | 6079 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn, 5 Leads | NTMFS5 | MOSFET (Metalloxid) | 5-DFN (5x6) (8-SoFL) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 40 v | 27a (TA), 110a (TC) | 4,5 V, 10 V. | 2,8 MOHM @ 40A, 10V | 2v @ 250 ähm | 35 NC @ 10 V | ± 20 V | 2100 PF @ 20 V | - - - | 3,7W (TA), 68W (TC) | |||||||||||||||||||||||||||||||
![]() | NSBC123JDXV6T1 | - - - | ![]() | 8103 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | Oberflächenhalterung | SOT-563, SOT-666 | NSBC123 | 500 MW | SOT-563 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 4.000 | 50V | 100 ma | 500NA | 2 NPN - Voresingenben (Dual) | 250 mV @ 300 µA, 10 mA | 80 @ 5ma, 10V | - - - | 2.2ko | 47kohm | ||||||||||||||||||||||||||||||||||
![]() | NVTFS6H888NLWFTAG | 0,2698 | ![]() | 2928 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | NVTFS6 | MOSFET (Metalloxid) | 8-WDFN (3,3x3,3) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 488-nvtfs6H888nlwftagtr | Ear99 | 8541.29.0095 | 1.500 | N-Kanal | 80 v | 4,9a (TA), 14a (TC) | 4,5 V, 10 V. | 50mohm @ 5a, 10V | 2 V @ 15 µA | 6 nc @ 10 v | ± 20 V | 258 PF @ 40 V | - - - | 2,9W (TA), 23W (TC) | ||||||||||||||||||||||||||||||
![]() | PN200_D27Z | - - - | ![]() | 9203 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | PN200 | 625 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 2.000 | 45 V | 500 mA | 50na | PNP | 400mv @ 20 mA, 200 mA | 100 @ 150 mA, 1V | 250 MHz | ||||||||||||||||||||||||||||||||||||
![]() | Bas16tt1 | - - - | ![]() | 7396 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | Bas16 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 3.000 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTD32N06 | - - - | ![]() | 3289 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Ntd32 | MOSFET (Metalloxid) | Dpak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 75 | N-Kanal | 60 v | 32a (ta) | 10V | 26mohm @ 16a, 10V | 4v @ 250 ähm | 60 nc @ 10 v | ± 20 V | 1725 PF @ 25 V. | - - - | 1,5W (TA), 93,75W (TJ) | |||||||||||||||||||||||||||||||
![]() | FDMS3672 | 3.1000 | ![]() | 2 | 0.00000000 | Onsemi | Ultrafet ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDMS36 | MOSFET (Metalloxid) | 8-mlp (5x6), Power56 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 7.4a (TA), 22A (TC) | 6 V, 10V | 23mohm @ 7.4a, 10V | 4v @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 2680 PF @ 50 V | - - - | 2,5 W (TA), 78 W (TC) | |||||||||||||||||||||||||||||||
![]() | 2SC4694-tl-e | 0,0400 | ![]() | 170 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 3.000 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SMBZ1477LT1G | 0,0200 | ![]() | 123 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0050 | 3.000 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GF1K | 0,4700 | ![]() | 3813 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | Do-214AC, SMA | GF1 | Standard | Do-214AC (SMA) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 7.500 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 800 V | 1,2 V @ 1 a | 2 µs | 5 µa @ 800 V | -65 ° C ~ 175 ° C. | 1a | 15PF @ 4V, 1 MHz | |||||||||||||||||||||||||||||||||||
![]() | FQB10N20TM | - - - | ![]() | 2197 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Fqb1 | MOSFET (Metalloxid) | D²pak (to-263) | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 10a (TC) | 10V | 360Mohm @ 5a, 10V | 5 V @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 670 PF @ 25 V. | - - - | - - - | ||||||||||||||||||||||||||||||||
![]() | BD37716stu | - - - | ![]() | 1352 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | BD377 | 25 w | To-126-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 60 | 60 v | 2 a | 2 µA (ICBO) | Npn | 1v @ 100 mA, 1a | 100 @ 150 mA, 2V | - - - | ||||||||||||||||||||||||||||||||||||
![]() | FGD3050G2 | 2.1000 | ![]() | 4402 | 0.00000000 | Onsemi | Automotive, AEC-Q101, EcoSospark® | Band & Rollen (TR) | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FGD3050 | Logik | 150 w | D-Pak (to-252) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | 500 V | 32 a | 1,2 V @ 4V, 6a | - - - | 22 NC | ||||||||||||||||||||||||||||||||||||
![]() | BZX84C3V6LT1 | - - - | ![]() | 1719 | 0.00000000 | Onsemi | BZX84CXXXLT1G | Band & Rollen (TR) | Veraltet | ± 6% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BZX84C3 | 225 MW | SOT-23-3 (to-236) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 5 µa @ 1 V | 3.6 V | 90 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | 2SK4094-1e | - - - | ![]() | 6492 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 2SK4094 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 100a (ta) | 4 V, 10V | 5mohm @ 50a, 10V | - - - | 220 NC @ 10 V | ± 20 V | 12500 PF @ 20 V | - - - | 1,75W (TA), 90W (TC) | |||||||||||||||||||||||||||||||
![]() | SZMM3Z36VT1G | 0,3900 | ![]() | 1659 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-76, SOD-323 | SZMM3 | 300 MW | SOD-323 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 50 NA @ 25.2 V. | 36 v | 90 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | BZX79C3V3-T50A | 0,1700 | ![]() | 15 | 0.00000000 | Onsemi | - - - | Klebeband (CT) Schneiden | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | BZX79C3 | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 5.000 | 1,5 V @ 100 mA | 25 µa @ 1 V | 3.3 v | 95 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | NGTB25N120FL2WAG | - - - | ![]() | 6341 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-4 | NGTB25 | Standard | 385 w | To-247-4l | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | 600 V, 50A, 10OHM, 15 V. | 136 ns | Feldstopp | 1200 V | 100 a | 100 a | 2,4 V @ 15V, 25a | 990 µJ (EIN), 660 µJ (AUS) | 181 NC | 17ns/113ns | ||||||||||||||||||||||||||||||||
![]() | Fqpf9n15 | - - - | ![]() | 9375 | 0.00000000 | Onsemi | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | Fqpf9 | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 150 v | 6.9a (TC) | 10V | 400mohm @ 3.45a, 10V | 4v @ 250 ähm | 13 NC @ 10 V | ± 25 V | 410 PF @ 25 V. | - - - | 44W (TC) | ||||||||||||||||||||||||||||||||
![]() | KSA1182YMTF | - - - | ![]() | 8211 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KSA1182 | 150 MW | SOT-23-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 30 v | 500 mA | 100NA (ICBO) | PNP | 250mv @ 10 mA, 100 mA | 120 @ 100 mA, 1V | 200 MHz | ||||||||||||||||||||||||||||||||||||
![]() | BSS100 | - - - | ![]() | 2154 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | BSS10 | MOSFET (Metalloxid) | To-92-3 | - - - | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 100 v | 220 Ma (TA) | 6OHM @ 220 Ma, 10V | 2V @ 1ma | 2 NC @ 10 V. | 60 PF @ 25 V | - - - | |||||||||||||||||||||||||||||||||||
![]() | CPH5541-TL-E | 0,4300 | ![]() | 3 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SOT-23-5 Dünn, TSOT-23-5 | CPH5541 | 600 MW | 5-cph | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 40 V, 30 V | 700 Ma | 100NA (ICBO) | NPN, PNP (Emitter Gekoppelt) | 190mv @ 10ma, 200 mA | 300 @ 50 Ma, 2 V | 540 MHz | |||||||||||||||||||||||||||||||||||
![]() | FQB7N80TM_AM002 | - - - | ![]() | 2519 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FQB7 | MOSFET (Metalloxid) | D²pak (to-263) | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 800 V | 6.6a (TC) | 10V | 1,5OHM @ 3,3A, 10 V. | 5 V @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1850 PF @ 25 V. | - - - | 3.13W (TA), 167W (TC) | ||||||||||||||||||||||||||||||||
![]() | KSC2787YBU | - - - | ![]() | 4599 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Kurzkörper | KSC2787 | 250 MW | To-92s | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 10.000 | 30 v | 50 ma | 100NA (ICBO) | Npn | 300 mV @ 1ma, 10 mA | 120 @ 1ma, 6v | 300 MHz | ||||||||||||||||||||||||||||||||||||
![]() | BC557C | - - - | ![]() | 8154 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | BC557 | 625 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | BC557COS | Ear99 | 8541.21.0075 | 5.000 | 45 V | 100 ma | 100na | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 320 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerlager