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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) | Kapazitätsverhöltnis | Kapazitätsverhöltnis | Q @ vr, f |
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![]() | BF246B | - - - | ![]() | 9229 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | BF246 | 625 MW | To-92-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | - - - | 25 v | 60 mA @ 15 V | 600 mv @ 10 na | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST45011MW6T1G | 0,1400 | ![]() | 168 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | SST45011 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-SSST45011MW6T1G-488 | Ear99 | 8541.21.0095 | 2.251 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMS86500DC | 3.6900 | ![]() | 2 | 0.00000000 | Onsemi | Dual Cool ™, Powertrench® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS86500 | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 29a (TA), 108a (TC) | 8 V, 10V | 2,3 MOHM @ 29A, 10V | 4,5 V @ 250 ähm | 107 NC @ 10 V | ± 20 V | 7680 PF @ 30 V | - - - | 3,2 W (TA), 125W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | TIG110BF | - - - | ![]() | 5291 | 0.00000000 | Onsemi | - - - | Tasche | Veraltet | - - - | K. Loch | To-220-3 Full Pack | TIG110 | Standard | 2 w | To-220fi (ls) | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 100 | 300 V, 15a, 30ohm, 15 V. | Npt | 600 V | 27 a | 108 a | 2v @ 15V, 15a | - - - | 95 NC | 65ns/250ns | ||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9R1560P2-F085 | 2.5900 | ![]() | 5732 | 0.00000000 | Onsemi | Automotive, AEC-Q101, Stealth ™ | Rohr | Aktiv | K. Loch | To-220-2 | ISL9R1560 | Standard | To-220-2 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 800 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2,2 V @ 15 a | 30 ns | 100 µA @ 600 V | -55 ° C ~ 175 ° C. | 15a | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDPF17N45T | - - - | ![]() | 1709 | 0.00000000 | Onsemi | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | FDPF1 | MOSFET (Metalloxid) | To-220f-3 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 450 V | 17a (TC) | 300MOHM @ 8.5A, 10V | 5 V @ 250 ähm | 50 nc @ 10 v | 2110 PF @ 25 V. | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | 2SC3361-6-TB-E-on | 0,1900 | ![]() | 30 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 0000.00.0000 | 3.000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MPSA44 | - - - | ![]() | 1022 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | MPSA44 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C15_T50A | - - - | ![]() | 3098 | 0.00000000 | Onsemi | - - - | Band & Box (TB) | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | BZX55C15 | 500 MW | Do-35 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 5.000 | 1,3 V @ 100 mA | 100 na @ 11 v | 15 v | 30 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQB6N15TM | - - - | ![]() | 1584 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FQB6 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 150 v | 6.4a (TC) | 10V | 600mohm @ 3.2a, 10 V. | 4v @ 250 ähm | 8,5 NC @ 10 V | ± 25 V | 270 PF @ 25 V. | - - - | 3,75W (TA), 63W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | SMBD1511LT3 | 0,0200 | ![]() | 220 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8542.39.0001 | 10.000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDR842p | - - - | ![]() | 3319 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-lsop (0,130 ", 3,30 mm Breit) | FDR84 | MOSFET (Metalloxid) | Supersot ™ -8 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 11a (ta) | 1,8 V, 4,5 V. | 9mohm @ 11a, 4,5 V. | 1,5 V @ 250 ähm | 80 NC @ 4,5 V. | ± 8 v | 5350 PF @ 6 V | - - - | 1,8W (TA) | |||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C30RL | - - - | ![]() | 7503 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8541.10.0050 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SVC270-TL-E | - - - | ![]() | 9514 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | SVC270 | 3-mcph | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 3.000 | 28.2PF @ 8v, 1 MHz | 1 Paar Gemeinsamer Kathode | 16 v | 1.75 | C2/C8 | 100 @ 3V, 100 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQB8N90CTM | - - - | ![]() | 6711 | 0.00000000 | Onsemi | QFET® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FQB8N90 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 900 V | 6.3a (TC) | 10V | 1,9ohm @ 3.15a, 10 V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 2080 PF @ 25 V. | - - - | 171W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | FGH75T65SHDT-F155 | 8.3200 | ![]() | 6087 | 0.00000000 | Onsemi | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | FGH75 | Standard | 455 w | To-247-3 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | 400 V, 75A, 3OHM, 15 V. | 76 ns | TRABENFELD STOPP | 650 V | 150 a | 225 a | 2,1 V @ 15V, 75a | 3MJ (EIN), 750 µJ (AUS) | 123 NC | 28ns/86ns | ||||||||||||||||||||||||||||||||||||||||
![]() | FDB8874 | - - - | ![]() | 2522 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FDB887 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 21A (TA), 121A (TC) | 4,5 V, 10 V. | 4,7mohm @ 40a, 10V | 2,5 V @ 250 ähm | 72 NC @ 10 V | ± 20 V | 3130 PF @ 15 V | - - - | 110W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FDMS8095AC | 2.4838 | ![]() | 2924 | 0.00000000 | Onsemi | Powertrench® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDMS8095 | MOSFET (Metalloxid) | 2.3W | 8-mlp (5x6), Power56 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N und p-kanal | 150 v | 6.2a, 1a | 30mohm @ 6.2a, 10V | 4v @ 250 ähm | 30nc @ 10v | 2020pf @ 75V | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | FDP2570 | - - - | ![]() | 2599 | 0.00000000 | Onsemi | Powertrench® | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | FDP25 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 400 | N-Kanal | 150 v | 22a (ta) | 6 V, 10V | 80MOHM @ 11A, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 20 V | 1911 PF @ 75 V. | - - - | 93W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | MBRM120LT3G | 0,5500 | ![]() | 9038 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | Do-216aa | MBRM120 | Schottky | PowerMite | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 12.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 20 v | 450 mV @ 1 a | 400 µA @ 20 V. | -55 ° C ~ 125 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mmbth34 | - - - | ![]() | 3019 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Mmbth34 | 225 MW | SOT-23-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | - - - | 40V | 50 ma | Npn | 15 @ 20 mA, 2V | 500 MHz | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | SZMMSZ4707T1G | 0,3900 | ![]() | 6 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | - - - | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SOD-123 | SZMMSZ4707 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 10 µa @ 15,2 V | 20 v | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSC3503DSTSSTU | - - - | ![]() | 4484 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | KSC3503 | 7 w | To-126-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 2.880 | 300 V | 100 ma | 100NA (ICBO) | Npn | 600mv @ 2MA, 20 mA | 60 @ 10 ma, 10V | 150 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | NSVT3904DXV6T1G | 0,1133 | ![]() | 6217 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | NSVT3904 | 500 MW | SOT-563 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 4.000 | 40V | 200 ma | - - - | 2 NPN (Dual) | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 300 MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MCH6630-TL-E | - - - | ![]() | 9792 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | 150 ° C. | Oberflächenhalterung | 6-smd, Flache Leitungen | MOSFET (Metalloxid) | 6-mcph | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-MCH6630-TL-E-488 | 1 | N-Kanal | 30 v | 700 mA (TA) | 1,5 V, 4V | 900mohm @ 350 mA, 4V | 1,3 V @ 100 µA | 1 nc @ 10 v | 10V | 30 PF @ 10 V | - - - | 800 MW (TA) | |||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA75329S3ST | - - - | ![]() | 1628 | 0.00000000 | Onsemi | Ultrafet ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Hufa75 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 49a (TC) | 10V | 24MOHM @ 49A, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FDD6N50TM-F085 | - - - | ![]() | 9206 | 0.00000000 | Onsemi | Automobil, AEC-Q101 | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FDD6N50 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 500 V | 6a (TC) | 10V | 900mohm @ 3a, 10V | 5 V @ 250 ähm | 16.6 NC @ 10 V. | ± 30 v | 9400 PF @ 25 V. | - - - | 89W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | VEC2415-TL-WZ | - - - | ![]() | 1134 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 8-smd, Flaches Blei | VEC2415 | MOSFET (Metalloxid) | SOT-28FL/VEC8 | - - - | ROHS3 -KONFORM | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 3a (ta) | 80MOHM @ 1,5A, 10V | 2,6 V @ 1ma | 10nc @ 10v | 505PF @ 20V | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Fw340-tl-e-on | 0,5900 | ![]() | 15 | 0.00000000 | Onsemi | * | Schüttgut | Aktiv | FW340 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1.000 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD676 | - - - | ![]() | 7949 | 0.00000000 | Onsemi | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | BD676 | 40 w | To-126 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 500 | 45 V | 4 a | 500 ähm | PNP - Darlington | 2,5 V @ 30 Ma, 1,5a | 750 @ 1,5a, 3V | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus