Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Spannung - Bewort | Biebstemperatur | Anwendungen | Montagetyp | Paket / Herbst | Grundproduktnummer | Frequenz | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuelle Bewertung (Verstärker) | Strom - Hold (ih) (max) | Strom - Test | Leistung - Ausgang | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Triactyp | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Spannung - Gate Trigger (VGT) (max) | Strom - nicht -rep. Surge 50, 60 Hz (ITSM) | Strom - Gate Trigger (IGT) (max) | RAUSCHFIGUR | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Spannung - Test | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | PD20010TR-E | - - - | ![]() | 2322 | 0.00000000 | Stmicroelektronik | - - - | Band & Rollen (TR) | Veraltet | 40 v | PowerSO-10RF Exposed Bottom Pad (2 Gebildete-Leads) | PD20010 | 2GHz | Ldmos | PowerSo-10RF (Gebildete Blei) | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 600 | 5a | 150 Ma | 10W | 11db | - - - | 13,6 v | ||||||||||||||||||||||||||||||||||||||||
![]() | STB35NF10T4 | - - - | ![]() | 2820 | 0.00000000 | Stmicroelektronik | StripFet ™ II | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | STB35N | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 100 v | 40a (TC) | 10V | 35mohm @ 17.5a, 10V | 4v @ 250 ähm | 55 NC @ 10 V | ± 20 V | 1550 PF @ 25 V. | - - - | 115W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Stl8n6f7 | 0,9100 | ![]() | 6113 | 0.00000000 | Stmicroelektronik | Stripfet ™ F7 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | Stl8 | MOSFET (Metalloxid) | Powerflat ™ (3.3x3.3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 36a (TC) | 10V | 25mohm @ 4a, 10V | 4v @ 250 ähm | 8 NC @ 10 V | ± 20 V | 450 PF @ 25 V. | - - - | 3W (TA), 60 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STD1NK80ZT4 | 1.1600 | ![]() | 7447 | 0.00000000 | Stmicroelektronik | Supermesh ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | STD1NK80 | MOSFET (Metalloxid) | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 800 V | 1a (TC) | 10V | 16ohm @ 500 mA, 10V | 4,5 V @ 50 µA | 7,7 NC @ 10 V | ± 30 v | 160 PF @ 25 V. | - - - | 45W (TC) | |||||||||||||||||||||||||||||||||||
STP90N55F4 | - - - | ![]() | 1821 | 0.00000000 | Stmicroelektronik | Deepgate ™, Stripfet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | STP90 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 55 v | 90a (TC) | 10V | 8mohm @ 45a, 10V | 4v @ 250 ähm | 90 nc @ 10 v | ± 20 V | 4800 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||||||||||||||||||
Bta06-600crg | 1.6600 | ![]() | 1 | 0.00000000 | Stmicroelektronik | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C (TJ) | K. Loch | To-220-3 | Bta06 | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 50 | Einzel | 25 ma | Standard | 600 V | 6 a | 1,3 v | 60a, 63a | 25 ma | ||||||||||||||||||||||||||||||||||||||||
STP9NK60ZD | - - - | ![]() | 3104 | 0.00000000 | Stmicroelektronik | SuperfredMesh ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | STP9N | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 497-4387-5 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 7a (TC) | 10V | 950MOHM @ 3,5a, 10V | 4,5 V @ 100 µA | 53 NC @ 10 V | ± 30 v | 1110 PF @ 25 V | - - - | 125W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STTH61W04SW | 3.4600 | ![]() | 547 | 0.00000000 | Stmicroelektronik | - - - | Rohr | Aktiv | K. Loch | To-247-3 | Stth61 | Standard | To-247 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 30 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 400 V | 1,35 V @ 60 a | 55 ns | 20 µA @ 400 V | 175 ° C (max) | 60a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | STU9N60M2 | 1.4700 | ![]() | 4743 | 0.00000000 | Stmicroelektronik | Mdmesh ™ II Plus | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | STU9N60 | MOSFET (Metalloxid) | To-251 (ipak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 75 | N-Kanal | 600 V | 5.5a (TC) | 10V | 780MOHM @ 3a, 10V | 4v @ 250 ähm | 10 nc @ 10 v | ± 25 V | 320 PF @ 100 V | - - - | 60 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STB21N65M5 | 5.3100 | ![]() | 1 | 0.00000000 | Stmicroelektronik | Mdmesh ™ v | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | STB21 | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 17a (TC) | 10V | 190MOHM @ 8.5A, 10V | 5 V @ 250 ähm | 50 nc @ 10 v | ± 25 V | 1950 PF @ 100 v | - - - | 125W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STU10NM60N | 3.0400 | ![]() | 2 | 0.00000000 | Stmicroelektronik | Mdmesh ™ II | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | Stu10 | MOSFET (Metalloxid) | To-251 (ipak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 75 | N-Kanal | 600 V | 10a (TC) | 10V | 550Mohm @ 4a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 25 V | 540 PF @ 50 V | - - - | 70W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STF28N65M2 | 3.5600 | ![]() | 1196 | 0.00000000 | Stmicroelektronik | Mdmesh ™ M2 | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | STF28 | MOSFET (Metalloxid) | To-220fp | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 497-15534-5 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 650 V | 20A (TC) | 10V | 180mohm @ 10a, 10V | 4v @ 250 ähm | 35 NC @ 10 V | ± 25 V | 1440 PF @ 100 V | - - - | 30W (TC) | ||||||||||||||||||||||||||||||||||
![]() | STL100N10F7 | 2.5600 | ![]() | 73 | 0.00000000 | Stmicroelektronik | Deepgate ™, Stripfet ™ VII | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | STL100 | MOSFET (Metalloxid) | Powerflat ™ (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 80A (TC) | 10V | 7.3MOHM @ 19A, 10V | 4v @ 250 ähm | 80 nc @ 10 v | ± 20 V | 5680 PF @ 50 V | - - - | 5W (TA), 100W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Stl8nh3ll | 1.4600 | ![]() | 60 | 0.00000000 | Stmicroelektronik | Stripfet ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | Stl8 | MOSFET (Metalloxid) | Powerflat ™ (3.3x3.3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 8a (TC) | 4,5 V, 10 V. | 15mohm @ 4a, 10V | 2,5 V @ 250 ähm | 12 NC @ 4,5 V. | ± 18 v | 965 PF @ 25 V. | - - - | 2W (TA), 50W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STL80N75F6 | 4.6600 | ![]() | 905 | 0.00000000 | Stmicroelektronik | Deepgate ™, Stripfet ™ vi | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | Stl80 | MOSFET (Metalloxid) | Powerflat ™ (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 75 V | 80A (TC) | 10V | 6,3 MOHM @ 9A, 10V | 4v @ 250 ähm | 100 nc @ 10 v | ± 20 V | 7120 PF @ 25 V. | - - - | 80W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STU70N2LH5 | - - - | ![]() | 4818 | 0.00000000 | Stmicroelektronik | Stripfet ™ v | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | Stu70 | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 75 | N-Kanal | 25 v | 48a (TC) | 5v, 10V | 7,5 MOHM @ 24a, 10V | 1V @ 250 ähm | 8 NC @ 5 V | ± 22 V | 1300 PF @ 25 V. | - - - | 60 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STW56N60M2 | 9.6900 | ![]() | 117 | 0.00000000 | Stmicroelektronik | Mdmesh ™ M2 | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-247-3 | STW56 | MOSFET (Metalloxid) | To-247-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 497-15577-5 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 600 V | 52a (TC) | 10V | 55mohm @ 26a, 10V | 4v @ 250 ähm | 91 nc @ 10 v | ± 25 V | 3750 PF @ 100 V | - - - | 350W (TC) | ||||||||||||||||||||||||||||||||||
![]() | STB70NH03LT4 | - - - | ![]() | 3391 | 0.00000000 | Stmicroelektronik | StripFet ™ III | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | STB70N | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 30 v | 60a (TC) | 5v, 10V | 9,5 MOHM @ 30a, 10V | 1V @ 250 ähm | 21 NC @ 5 V | ± 20 V | 2200 PF @ 10 V. | - - - | 858W (TC) | |||||||||||||||||||||||||||||||||||
STP3NB100 | - - - | ![]() | 9615 | 0.00000000 | Stmicroelektronik | PowerMesh ™ | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | Stp3n | MOSFET (Metalloxid) | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | 497-2641-5 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 1000 v | 3a (TC) | 10V | 6OHM @ 1,5a, 10V | 4v @ 250 ähm | 30 NC @ 10 V | ± 30 v | 700 PF @ 25 V. | - - - | 100 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STD8NM60N-1 | - - - | ![]() | 7495 | 0.00000000 | Stmicroelektronik | Mdmesh ™ II | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | Std8n | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 75 | N-Kanal | 600 V | 7a (TC) | 10V | 650 MOHM @ 3,5A, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 25 V | 560 PF @ 50 V | - - - | 70W (TC) | |||||||||||||||||||||||||||||||||||
T1635H-8t | 1.6100 | ![]() | 3 | 0.00000000 | Stmicroelektronik | ECOPACK®2 | Rohr | Aktiv | -40 ° C ~ 125 ° C (TJ) | K. Loch | To-220-3 | T1635 | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | -1138-t1635H-8t | Ear99 | 8541.30.0080 | 50 | Einzel | 35 Ma | Standard | 800 V | 16 a | 1,3 v | 160a, 168a | 35 Ma | |||||||||||||||||||||||||||||||||||||||
![]() | STS15N4llf5 | - - - | ![]() | 7695 | 0.00000000 | Stmicroelektronik | Stripfet ™ v | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | STS15 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 15a (TC) | 4,5 V, 10 V. | 6,7 MOHM @ 7,5A, 10V | 1V @ 250 ähm | 12,9 NC @ 4,5 V. | ± 16 v | 1570 PF @ 25 V. | - - - | 3W (TC) | |||||||||||||||||||||||||||||||||||
![]() | STL100N8F7 | 2.8700 | ![]() | 2895 | 0.00000000 | Stmicroelektronik | Stripfet ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | STL100 | MOSFET (Metalloxid) | Powerflat ™ (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 497-16502-2 | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 100a (TC) | 10V | 6.1MOHM @ 10a, 10V | 4,5 V @ 250 ähm | 46,8 NC @ 10 V. | ± 20 V | 3435 PF @ 40 V | - - - | 4,8W (TA), 120W (TC) | ||||||||||||||||||||||||||||||||||
STC08IE120HV | - - - | ![]() | 9024 | 0.00000000 | Stmicroelektronik | ESBT® | Rohr | Veraltet | 1200 V (1,2 kV) | Torfahrer | K. Loch | To-247-4 | STC08I | To-247-4l hv | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | 8a | NPN - Emitter Schaltet Bipolar AUS | |||||||||||||||||||||||||||||||||||||||||||||
STP110N55F6 | 2.6700 | ![]() | 416 | 0.00000000 | Stmicroelektronik | Deepgate ™, Stripfet ™ vi | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | STP110 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | UnberÜHrt Ereichen | -497-13552-5 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 55 v | 110a (TC) | 10V | 5.2mohm @ 60a, 10V | 4v @ 250 ähm | 120 nc @ 10 v | ± 20 V | 8350 PF @ 25 V. | - - - | 150W (TC) | |||||||||||||||||||||||||||||||||||
![]() | ACS102-5ta | - - - | ![]() | 4049 | 0.00000000 | Stmicroelektronik | ASD ™ | Schüttgut | Veraltet | -30 ° C ~ 125 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | ACS102 | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 2.500 | Einzel | 20 ma | Logik - Sensitive Gate | 500 V | 200 ma | 900 mv | 7.3a, 8a | 5 Ma | |||||||||||||||||||||||||||||||||||||||
MD2001FX | 2.8100 | ![]() | 3923 | 0.00000000 | Stmicroelektronik | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | Isowatt218fx | MD2001 | 58 w | ISOWATT-218FX | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | 700 V | 12 a | 200 µA | Npn | 1,8 V @ 1,5a, 6a | 4,5 @ 6a, 5V | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | T405T-6FP | 0,8400 | ![]() | 2 | 0.00000000 | Stmicroelektronik | - - - | Rohr | Aktiv | -40 ° C ~ 125 ° C (TJ) | K. Loch | To-220-3 Full Pack | T405 | To-220fpab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 497-17157 | Ear99 | 8541.30.0080 | 50 | Einzel | 10 ma | Logik - Sensitive Gate | 600 V | 4 a | 1,3 v | 30a, 31a | 5 Ma | ||||||||||||||||||||||||||||||||||||||
![]() | T810-600b-tr | 1.6200 | ![]() | 42 | 0.00000000 | Stmicroelektronik | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | T810 | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 2.500 | Einzel | 15 Ma | Logik - Sensitive Gate | 600 V | 8 a | 1,3 v | 80a, 84a | 10 ma | |||||||||||||||||||||||||||||||||||||||
![]() | STP11NK40ZFP | 2.4800 | ![]() | 373 | 0.00000000 | Stmicroelektronik | Supermesh ™ | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | STP11 | MOSFET (Metalloxid) | To-220fp | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 9a (TC) | 10V | 550MOHM @ 4,5a, 10V | 4,5 V @ 100 µA | 32 NC @ 10 V | ± 30 v | 930 PF @ 25 V. | - - - | 30W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus