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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Struktur | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Strom - Hold (ih) (max) | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Spannung - Gate Trigger (VGT) (max) | Strom - nicht -rep. Surge 50, 60 Hz (ITSM) | Strom - Gate Trigger (IGT) (max) | Strom - Auf demstaat (It (Av)) (max) | Anzahl der Scrs, Dioden | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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TD500N12KOFHPSA2 | 338.6100 | ![]() | 2312 | 0.00000000 | Infineon -technologien | - - - | Tablett | Veraltet | -40 ° C ~ 125 ° C. | Chassis -berg | Modul | TD500N12 | Serienverbindung - SCR/Diode | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 2 | 300 ma | 1,8 kv | 900 a | 2,2 v | 17000a @ 50Hz | 250 Ma | 500 a | 1 SCR, 1 Diode | |||||||||||||||||||||||||||
![]() | IRL8113L | - - - | ![]() | 6936 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | To-262 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | *IRL8113L | Ear99 | 8541.29.0095 | 50 | N-Kanal | 30 v | 105a (TC) | 4,5 V, 10 V. | 6mohm @ 21a, 10V | 2,25 V @ 250 ähm | 35 NC @ 4,5 V. | ± 20 V | 2840 PF @ 15 V | - - - | 110W (TC) | ||||||||||||||||||||||
![]() | IRF3710L | - - - | ![]() | 5515 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | To-262 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | *IRF3710L | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 57a (TC) | 10V | 23mohm @ 28a, 10V | 4v @ 250 ähm | 130 nc @ 10 v | ± 20 V | 3130 PF @ 25 V. | - - - | 200W (TC) | ||||||||||||||||||||||
![]() | SPP21N50C3HKSA1 | - - - | ![]() | 2699 | 0.00000000 | Infineon -technologien | Coolmos ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Spp21n | MOSFET (Metalloxid) | PG-to220-3-1 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 500 | N-Kanal | 560 V | 21a (TC) | 10V | 190mohm @ 13.1a, 10V | 3,9 V @ 1ma | 95 NC @ 10 V | ± 20 V | 2400 PF @ 25 V. | - - - | 208W (TC) | |||||||||||||||||||||||
![]() | Irfi520n | - - - | ![]() | 7202 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | PG-to220-FP | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | *Irfi520n | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 7.6a (TC) | 10V | 200mohm @ 4.3a, 10V | 4v @ 250 ähm | 25 NC @ 10 V | ± 20 V | 330 PF @ 25 V. | - - - | 30W (TC) | ||||||||||||||||||||||
![]() | IRFR3710ZTRR | - - - | ![]() | 8926 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | D-Pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP001575918 | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 42a (TC) | 10V | 18mohm @ 33a, 10V | 4v @ 250 ähm | 100 nc @ 10 v | ± 20 V | 2930 PF @ 25 V. | - - - | 140W (TC) | ||||||||||||||||||||||
![]() | IRF9953PBF | - - - | ![]() | 8936 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Abgebrochen bei Sic | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | IRF995 | MOSFET (Metalloxid) | 2W | 8-so | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP001565680 | Ear99 | 8541.29.0095 | 95 | 2 p-kanal (dual) | 30V | 2.3a | 250 MOHM @ 1A, 10V | 1V @ 250 ähm | 12nc @ 10v | 190pf @ 15V | - - - | |||||||||||||||||||||||
![]() | IRF3709PBF | - - - | ![]() | 8735 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 30 v | 90a (TC) | 4,5 V, 10 V. | 9mohm @ 15a, 10V | 3v @ 250 ähm | 41 NC @ 5 V. | ± 20 V | 2672 PF @ 16 V | - - - | 3.1W (TA), 120W (TC) | |||||||||||||||||||||||
![]() | IRF7457PBF | - - - | ![]() | 8610 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Abgebrochen bei Sic | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP001570360 | Ear99 | 8541.29.0095 | 95 | N-Kanal | 20 v | 15a (ta) | 4,5 V, 10 V. | 7mohm @ 15a, 10V | 3v @ 250 ähm | 42 NC @ 4,5 V. | ± 20 V | 3100 PF @ 10 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||
![]() | IRL3303Strr | - - - | ![]() | 9885 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 38a (TC) | 4,5 V, 10 V. | 26mohm @ 20a, 10V | 1V @ 250 ähm | 26 NC @ 4,5 V. | ± 16 v | 870 PF @ 25 V. | - - - | 3,8 W (TA), 68W (TC) | |||||||||||||||||||||||
![]() | SPD30N03S2L-07 | - - - | ![]() | 3057 | 0.00000000 | Infineon -technologien | Optimos ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SPD30N | MOSFET (Metalloxid) | PG-to252-3-11 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 6.7mohm @ 30a, 10V | 2v @ 85 ähm | 68 NC @ 10 V. | ± 20 V | 2530 PF @ 25 V. | - - - | 136W (TC) | ||||||||||||||||||||||
![]() | 94-3316 | - - - | ![]() | 3726 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Aktiv | Oberflächenhalterung | To-261-4, to-261aa | Irll014 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 80 | N-Kanal | 55 v | 2a (ta) | 140Mohm @ 2a, 10V | 2v @ 250 ähm | 14 NC @ 10 V | 230 PF @ 25 V. | - - - | ||||||||||||||||||||||||||
![]() | BCR133SH6327XTSA1 | 0,4600 | ![]() | 9 | 0.00000000 | Infineon -technologien | - - - | Band & Rollen (TR) | Lets Kaufen | Oberflächenhalterung | 6-VSSOP, SC-88, SOT-363 | BCR133 | 250 MW | Pg-sot363-po | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 50V | 100 ma | - - - | 2 NPN - Voresingenben (Dual) | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 130 MHz | 10kohm | 10kohm | |||||||||||||||||||||||||
![]() | TT240N32KOFHPSA1 | - - - | ![]() | 6931 | 0.00000000 | Infineon -technologien | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C. | Chassis -berg | Modul | Tt240n | Serienverbindung - Alle SCRs | Herunterladen | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.30.0080 | 2 | 300 ma | 3,2 kv | 700 a | 1,5 v | 6100a @ 50Hz | 250 Ma | 446 a | 2 SCRS | |||||||||||||||||||||||||||
![]() | IRL3202Strr | - - - | ![]() | 4408 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 20 v | 48a (TC) | 4,5 V, 7V | 16mohm @ 29a, 7V | 700 MV @ 250 um (min) | 43 NC @ 4,5 V. | ± 10 V | 2000 PF @ 15 V | - - - | 69W (TC) | |||||||||||||||||||||||
![]() | IRLR8503TRL | - - - | ![]() | 2045 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | D-Pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 44a (TC) | 4,5 V, 10 V. | 16mohm @ 15a, 10V | 3v @ 250 ähm | 20 NC @ 5 V | ± 20 V | 1650 PF @ 25 V. | - - - | 62W (TC) | |||||||||||||||||||||||
![]() | 94-2113 | - - - | ![]() | 6420 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRL2203 | MOSFET (Metalloxid) | D2pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 30 v | 116a (TC) | 4,5 V, 10 V. | 7mohm @ 60a, 10V | 3v @ 250 ähm | 60 NC @ 4,5 V. | ± 16 v | 3290 PF @ 25 V. | - - - | 3,8 W (TA), 180 W (TC) | ||||||||||||||||||||||
![]() | Spp17n80c3xksa1 | 5.2000 | ![]() | 2 | 0.00000000 | Infineon -technologien | Coolmos ™ | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Spp17n80 | MOSFET (Metalloxid) | PG-to220-3-1 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 17a (TC) | 10V | 290MOHM @ 11A, 10V | 3,9 V @ 1ma | 177 NC @ 10 V | ± 20 V | 2320 PF @ 25 V. | - - - | 208W (TC) | ||||||||||||||||||||||
![]() | Irfz44vstrr | - - - | ![]() | 1720 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 55a (TC) | 10V | 16,5 MOHM @ 31A, 10V | 4v @ 250 ähm | 67 NC @ 10 V | ± 20 V | 1812 PF @ 25 V. | - - - | 115W (TC) | |||||||||||||||||||||||
![]() | IRL3715ZLPBF | - - - | ![]() | 8559 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | To-262 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 20 v | 50a (TC) | 4,5 V, 10 V. | 11mohm @ 15a, 10V | 2,55 V @ 250 ähm | 11 NC @ 4,5 V. | ± 20 V | 870 PF @ 10 V | - - - | 45W (TC) | ||||||||||||||||||||||||
![]() | IRF7534D1TR | - - - | ![]() | 7119 | 0.00000000 | Infineon -technologien | Fetky ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP, 8-MSOP (0,118 ", 3,00 mm Breit) | MOSFET (Metalloxid) | Micro8 ™ | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 4.000 | P-Kanal | 20 v | 4.3a (TA) | 2,5 V, 4,5 V. | 55mohm @ 4,3a, 4,5 V. | 1,2 V @ 250 ähm | 15 NC @ 5 V | ± 12 V | 1066 PF @ 10 V. | Schottky Diode (Isolier) | 1,25W (TA) | |||||||||||||||||||||||
![]() | IRFU3418PBF | - - - | ![]() | 7533 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | Ipak (to-251aa) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | *IRFU3418PBF | Ear99 | 8541.29.0095 | 75 | N-Kanal | 80 v | 70a (TC) | 10V | 14mohm @ 18a, 10V | 5,5 V @ 250 ähm | 94 NC @ 10 V | ± 20 V | 3510 PF @ 25 V. | - - - | 3,8 W (TA), 140 W (TC) | |||||||||||||||||||||||
![]() | IRF7103Q | - - - | ![]() | 3804 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | IRF71 | MOSFET (Metalloxid) | 2.4W | 8-so | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 95 | 2 n-kanal (dual) | 50V | 3a | 130Mohm @ 3a, 10V | 3v @ 250 ähm | 15nc @ 10v | 255PF @ 25V | - - - | ||||||||||||||||||||||||
![]() | IRFZ48NLPBF | - - - | ![]() | 4972 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | To-262 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 55 v | 64a (TC) | 10V | 14mohm @ 32a, 10V | 4v @ 250 ähm | 81 NC @ 10 V | ± 20 V | 1970 PF @ 25 V. | - - - | 3,8 W (TA), 130 W (TC) | ||||||||||||||||||||||||
![]() | Irfi9z24n | - - - | ![]() | 4880 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220ab Full-Pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | P-Kanal | 55 v | 9,5a (TC) | 10V | 175mohm @ 5.4a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 350 PF @ 25 V. | - - - | 29W (TC) | ||||||||||||||||||||||||
![]() | IPD60R600P7Sauma1 | 0,8800 | ![]() | 8 | 0.00000000 | Infineon -technologien | Coolmos ™ P7 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Ipd60r | MOSFET (Metalloxid) | PG-to252-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 6a (TC) | 10V | 600MOHM @ 1,7a, 10V | 4 V @ 80 µA | 9 NC @ 10 V. | ± 20 V | 363 PF @ 400 V | - - - | 30W (TC) | ||||||||||||||||||||||
![]() | IRF7324 | - - - | ![]() | 7125 | 0.00000000 | Infineon -technologien | Hexfet® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | IRF732 | MOSFET (Metalloxid) | 2W | 8-so | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | *IRF7324 | Ear99 | 8541.29.0095 | 95 | 2 p-kanal (dual) | 20V | 9a | 18mohm @ 9a, 4,5 V. | 1V @ 250 ähm | 63nc @ 5v | 2940PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||
![]() | IRF9956TRPBF | 0,7800 | ![]() | 2 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | IRF995 | MOSFET (Metalloxid) | 2W | 8-so | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 4.000 | 2 n-kanal (dual) | 30V | 3.5a | 100mohm @ 2,2a, 10 V | 1V @ 250 ähm | 14nc @ 10v | 190pf @ 15V | Logikpegel -tor | ||||||||||||||||||||||||
![]() | IRLR7833TRRPBF | - - - | ![]() | 6987 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | D-Pak | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP001573116 | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 140a (TC) | 4,5 V, 10 V. | 4,5 MOHM @ 15a, 10V | 2,3 V @ 250 ähm | 50 NC @ 4,5 V. | ± 20 V | 4010 PF @ 15 V | - - - | 140W (TC) | |||||||||||||||||||||||
![]() | IRF7457TRPBF | - - - | ![]() | 5349 | 0.00000000 | Infineon -technologien | Hexfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 20 v | 15a (ta) | 4,5 V, 10 V. | 7mohm @ 15a, 10V | 3v @ 250 ähm | 42 NC @ 4,5 V. | ± 20 V | 3100 PF @ 10 V | - - - | 2,5 W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus