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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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IPW65R037C6FKSA1 | 19.2400 | ![]() | 51 | 0.00000000 | Infineon -technologien | Coolmos ™ C6 | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | IPW65R037 | MOSFET (Metalloxid) | PG-to247-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | N-Kanal | 650 V | 83.2a (TC) | 10V | 37mohm @ 33.1a, 10V | 3,5 V @ 3,3 mA | 330 NC @ 10 V | ± 20 V | 7240 PF @ 100 V | - - - | 500W (TC) | |||||||||||||||||||||||||||||||
![]() | IPP60R099P6XKSA1 | 6.8500 | ![]() | 7161 | 0.00000000 | Infineon -technologien | Coolmos ™ P6 | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IPP60R099 | MOSFET (Metalloxid) | PG-to220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 37,9a (TC) | 10V | 99mohm @ 14.5a, 10V | 4,5 V @ 1,21 Ma | 70 nc @ 10 v | ± 20 V | 3330 PF @ 100 V | - - - | 278W (TC) | ||||||||||||||||||||||||||||||
IPW60R070P6XKSA1 | 8.7100 | ![]() | 146 | 0.00000000 | Infineon -technologien | Coolmos ™ P6 | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | IPW60R070 | MOSFET (Metalloxid) | PG-to247-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 30 | N-Kanal | 600 V | 53,5a (TC) | 10V | 70 MOHM @ 20.6A, 10V | 4,5 V @ 1,72 mA | 100 nc @ 10 v | ± 20 V | 4750 PF @ 100 V | - - - | 391W (TC) | |||||||||||||||||||||||||||||||
![]() | IPL60R255P6AUMA1 | - - - | ![]() | 7513 | 0.00000000 | Infineon -technologien | Coolmos ™ P6 | Band & Rollen (TR) | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 4-Powertsfn | IPL60R | MOSFET (Metalloxid) | PG-VSON-4 | Herunterladen | 2a (4 Wegen) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 15,9a (TC) | 10V | 255mohm @ 6.4a, 10V | 4,5 V @ 530 ähm | 31 NC @ 10 V | ± 20 V | 1450 PF @ 100 V | - - - | 126W (TC) | |||||||||||||||||||||||||||||||
![]() | IPI120N06S402AKSA2 | 2.3590 | ![]() | 3065 | 0.00000000 | Infineon -technologien | Optimos ™ | Rohr | Nicht für Designs | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | IPI120 | MOSFET (Metalloxid) | PG-TO262-3-1 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 500 | N-Kanal | 60 v | 120a (TC) | 10V | 2,8 MOHM @ 100A, 10V | 4v @ 140 ähm | 195 NC @ 10 V. | ± 20 V | 15750 PF @ 25 V. | - - - | 188W (TC) | ||||||||||||||||||||||||||||||
![]() | BFQ790H6327XTSA1 | 2.3400 | ![]() | 4 | 0.00000000 | Infineon -technologien | - - - | Band & Rollen (TR) | Veraltet | Oberflächenhalterung | To-243aa | BFQ790 | 1,5W | Pg-sot89 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1.000 | 17db | 6.1v | 300 ma | Npn | 60 @ 250 mA, 5V | 1,85 GHz | 2,6 dB bei 1,8 GHz | |||||||||||||||||||||||||||||||||||
![]() | FZ1200R33KL2CNOSA1 | - - - | ![]() | 9054 | 0.00000000 | Infineon -technologien | - - - | Tablett | Veraltet | -40 ° C ~ 125 ° C (TJ) | Oberflächenhalterung | Modul | 14500 w | Standard | Modul | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP000100618 | Ear99 | 8541.29.0095 | 1 | - - - | 3300 v | 2300 a | 3,65 V @ 15V, 1200a | 5 Ma | NEIN | 145 NF @ 25 V. | |||||||||||||||||||||||||||||||||
![]() | IPP039N04LGHKSA1 | - - - | ![]() | 1279 | 0.00000000 | Infineon -technologien | Optimos ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IPP039n | MOSFET (Metalloxid) | PG-to220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP000391494 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 40 v | 80A (TC) | 4,5 V, 10 V. | 3,9 MOHM @ 80A, 10V | 2V @ 45 ähm | 78 NC @ 10 V | ± 20 V | 6100 PF @ 25 V. | - - - | 94W (TC) | ||||||||||||||||||||||||||||||
![]() | IPD068N10N3GATMA1 | 2.7500 | ![]() | 12 | 0.00000000 | Infineon -technologien | Optimos ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IPD068 | MOSFET (Metalloxid) | PG-to252-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 90a (TC) | 6 V, 10V | 6,8 MOHM @ 90A, 10V | 3,5 V @ 90 ähm | 68 NC @ 10 V. | ± 20 V | 4910 PF @ 50 V | - - - | 150W (TC) | ||||||||||||||||||||||||||||||
IPI024N06N3GXKSA1 | 3.2600 | ![]() | 8269 | 0.00000000 | Infineon -technologien | Optimos ™ | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | IPI024 | MOSFET (Metalloxid) | PG-TO262-3-1 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 120a (TC) | 10V | 2,4 MOHM @ 100A, 10V | 4v @ 196 ähm | 275 NC @ 10 V | ± 20 V | 23000 PF @ 30 V | - - - | 250 W (TC) | |||||||||||||||||||||||||||||||
IPI037N08N3GXKSA1 | - - - | ![]() | 8042 | 0.00000000 | Infineon -technologien | Optimos ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Ipi037n | MOSFET (Metalloxid) | PG-to262-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 500 | N-Kanal | 80 v | 100a (TC) | 6 V, 10V | 3,75 MOHM @ 100A, 10V | 3,5 V @ 155 ähm | 117 NC @ 10 V | ± 20 V | 8110 PF @ 40 V | - - - | 214W (TC) | |||||||||||||||||||||||||||||||
![]() | BSC0502NSIATMA1 | 1.5600 | ![]() | 4 | 0.00000000 | Infineon -technologien | Optimos ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | BSC0502 | MOSFET (Metalloxid) | PG-TDSON-8-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 30 v | 26a (TA), 100A (TC) | 4,5 V, 10 V. | 2,3 MOHM @ 30a, 10V | 2v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1600 PF @ 15 V | - - - | 2,5 W (TA), 43W (TC) | ||||||||||||||||||||||||||||||
![]() | BSL303SpEH6327XTSA1 | - - - | ![]() | 1160 | 0.00000000 | Infineon -technologien | Optimos ™ | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | PG-TSOP6-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 6.3a (ta) | 4,5 V, 10 V. | 33mohm @ 6.3a, 10V | 2v @ 30 ähm | 20,9 NC @ 10 V. | ± 20 V | 1401 PF @ 15 V | - - - | 2W (TA) | |||||||||||||||||||||||||||||||
![]() | BSZ017NE2LS5IATMA1 | 1.6400 | ![]() | 3103 | 0.00000000 | Infineon -technologien | Optimos ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | BSZ017 | MOSFET (Metalloxid) | Pg-tsdson-8-fl | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 25 v | 27a (TA), 40A (TC) | 4,5 V, 10 V. | 1,7 MOHM @ 20A, 10V | 2v @ 250 ähm | 30 NC @ 10 V | ± 16 v | 2000 PF @ 12 V | - - - | 2.1W (TA), 50W (TC) | ||||||||||||||||||||||||||||||
![]() | BSZ0502NSIATMA1 | 0,6360 | ![]() | 2510 | 0.00000000 | Infineon -technologien | Optimos ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | BSZ0502 | MOSFET (Metalloxid) | Pg-tsdson-8-fl | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 30 v | 22A (TA), 40A (TC) | 4,5 V, 10 V. | 2,8 MOHM @ 20A, 10V | 2v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1600 PF @ 15 V | - - - | 2.1W (TA), 43W (TC) | ||||||||||||||||||||||||||||||
![]() | IDP2301XUMA1 | - - - | ![]() | 6514 | 0.00000000 | Infineon -technologien | * | Band & Rollen (TR) | Veraltet | IDP2301 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP001368356 | Veraltet | 2.500 | ||||||||||||||||||||||||||||||||||||||||||||||
IKCM15L60GDXKMA1 | 17.4200 | ![]() | 245 | 0.00000000 | Infineon -technologien | Cipos ™ | Rohr | Aktiv | K. Loch | 24-Powerdip-Modul (1.028 ", 26,10 mm) | IGBT | Ikcm15 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8542.39.0001 | 14 | 3 Phase | 20 a | 600 V | 2000VRMs | ||||||||||||||||||||||||||||||||||||||||
![]() | IPAW60R280CEXKSA1 | - - - | ![]() | 7407 | 0.00000000 | Infineon -technologien | Coolmos ™ | Rohr | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack, Variante | IPAW60 | MOSFET (Metalloxid) | PG-to220 Full Pack, Breit-Krizene | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 450 | N-Kanal | 600 V | 19,3a (TC) | 10V | 280 MOHM @ 6,5A, 10V | 3,5 V @ 430 ähm | 43 NC @ 10 V | ± 20 V | 950 PF @ 100 V | - - - | 32W (TC) | ||||||||||||||||||||||||||||||
![]() | IPB60R040C7ATMA1 | 13.6500 | ![]() | 7269 | 0.00000000 | Infineon -technologien | Coolmos ™ C7 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-4, d²pak (3 Leitete + Tab), to-263aaaa | IPB60R040 | MOSFET (Metalloxid) | PG-to263-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 50a (TC) | 10V | 40mohm @ 24.9a, 10V | 4V @ 1,24 Ma | 107 NC @ 10 V | ± 20 V | 4340 PF @ 400 V | - - - | 227W (TC) | ||||||||||||||||||||||||||||||
![]() | IPD60R650CEBTMA1 | - - - | ![]() | 7490 | 0.00000000 | Infineon -technologien | Coolmos ™ CE | Band & Rollen (TR) | Abgebrochen bei Sic | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Ipd60r | MOSFET (Metalloxid) | PG-to252-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP001369530 | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 7a (TC) | 10V | 650 MOHM @ 2,4a, 10V | 3,5 V bei 200 µA | 20,5 NC @ 10 V. | ± 20 V | 440 PF @ 100 V | - - - | 82W (TC) | |||||||||||||||||||||||||||||
![]() | IPD65R1K0CEAUMA1 | 0,3783 | ![]() | 5975 | 0.00000000 | Infineon -technologien | Coolmos ™ | Band & Rollen (TR) | Nicht für Designs | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IPD65R1 | MOSFET (Metalloxid) | PG-to252-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 650 V | 7.2a (TC) | 10V | 1OHM @ 1,5a, 10V | 3,5 V bei 200 µA | 15.3 NC @ 10 V. | ± 20 V | 328 PF @ 100 V | - - - | 68W (TC) | ||||||||||||||||||||||||||||||
![]() | IPD70R1K4CEAUMA1 | 0,8200 | ![]() | 2771 | 0.00000000 | Infineon -technologien | Coolmos ™ CE | Band & Rollen (TR) | Nicht für Designs | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IPD70 | MOSFET (Metalloxid) | PG-to252-3 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 700 V | 5.4a (TC) | 10V | 1,4ohm @ 1a, 10 V | 3,5 V @ 130 ähm | 10.5 NC @ 10 V | ± 20 V | 225 PF @ 100 V | - - - | 53W (TC) | ||||||||||||||||||||||||||||||
![]() | IPD70R600CEAUMA1 | - - - | ![]() | 6902 | 0.00000000 | Infineon -technologien | Coolmos ™ CE | Band & Rollen (TR) | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IPD70 | MOSFET (Metalloxid) | PG-to252-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 700 V | 10.5a (TC) | 10V | 600mohm @ 1a, 10V | 3,5 V @ 210 ähm | 22 NC @ 10 V. | ± 20 V | 474 PF @ 100 V | - - - | 86W (TC) | ||||||||||||||||||||||||||||||
![]() | IPP60R120C7XKSA1 | 5.5100 | ![]() | 486 | 0.00000000 | Infineon -technologien | Coolmos ™ C7 | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IPP60R120 | MOSFET (Metalloxid) | PG-to220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 19A (TC) | 10V | 120 MOHM @ 7.8a, 10V | 4V @ 390 ua | 34 NC @ 10 V. | ± 20 V | 1500 PF @ 400 V | - - - | 92W (TC) | ||||||||||||||||||||||||||||||
![]() | IPD031N03LGBTMA1 | 0,5302 | ![]() | 2998 | 0.00000000 | Infineon -technologien | Optimos ™ | Band & Rollen (TR) | Nicht für Designs | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IPD031 | MOSFET (Metalloxid) | PG-to252-3-11 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP000236957 | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 90a (TC) | 4,5 V, 10 V. | 3.1MOHM @ 30a, 10V | 2,2 V @ 250 ähm | 51 NC @ 10 V | ± 20 V | 5300 PF @ 15 V | - - - | 94W (TC) | |||||||||||||||||||||||||||||
![]() | IPP034N03LGHKSA1 | - - - | ![]() | 8514 | 0.00000000 | Infineon -technologien | Optimos ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IPP034n | MOSFET (Metalloxid) | PG-to220-3-1 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP000237660 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 30 v | 80A (TC) | 4,5 V, 10 V. | 3.4mohm @ 30a, 10V | 2,2 V @ 250 ähm | 25 NC @ 4,5 V. | ± 20 V | 5300 PF @ 15 V | - - - | 94W (TC) | ||||||||||||||||||||||||||||||
![]() | IPP50R350CPHKSA1 | - - - | ![]() | 4050 | 0.00000000 | Infineon -technologien | Coolmos ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IPP50R | MOSFET (Metalloxid) | PG-to220-3-1 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP000236069 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 500 V | 10a (TC) | 10V | 350MOHM @ 5.6a, 10V | 3,5 V @ 370 ähm | 25 NC @ 10 V | ± 20 V | 1020 PF @ 100 V | - - - | 89W (TC) | ||||||||||||||||||||||||||||||
![]() | BAV99UE6359HTMA1 | - - - | ![]() | 5639 | 0.00000000 | Infineon -technologien | Automobil, AEC-Q101 | Band & Rollen (TR) | Lets Kaufen | Oberflächenhalterung | SC-74, SOT-457 | BAV99 | Standard | PG-SC74-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | SP000012614 | Ear99 | 8541.10.0070 | 3.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 2 Paar Serie Verbindung | 80 v | 100 mA (DC) | 1,2 V @ 100 mA | 4 ns | 150 NA @ 70 V | 150 ° C (max) | |||||||||||||||||||||||||||||||||
![]() | BCX5316H6433XTMA1 | 0,1920 | ![]() | 1574 | 0.00000000 | Infineon -technologien | Automobil, AEC-Q101 | Band & Rollen (TR) | Lets Kaufen | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | BCX5316 | 2 w | Pg-sot89 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 4.000 | 80 v | 1 a | 100NA (ICBO) | PNP | 500 mv @ 50 mA, 500 mA | 100 @ 150 mA, 2V | 125 MHz | ||||||||||||||||||||||||||||||||||
![]() | BCX5516H6327XTSA1 | 0,1920 | ![]() | 3131 | 0.00000000 | Infineon -technologien | Automobil, AEC-Q101 | Band & Rollen (TR) | Lets Kaufen | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | BCX5516 | 2 w | Pg-sot89 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1.000 | 60 v | 1 a | 100NA (ICBO) | Npn | 500 mv @ 50 mA, 500 mA | 100 @ 150 mA, 2V | 100 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus