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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Diodentyp | Spannung - Peak Reverse (max) |
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![]() | Murt30060r | 118.4160 | ![]() | 8258 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Drei -Turf | Murt30060 | Standard | Drei -Turf | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Murt30060Rgn | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 600 V | 150a | 1,7 V @ 150 a | 200 ns | 25 µa @ 50 V | -55 ° C ~ 150 ° C. | ||||||||||||||||
![]() | SD51R | 20.2170 | ![]() | 3373 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AB, DO-5, Stud | SD51 | Schottky, Umgekehrte Polarität | Do-5 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | SD51Rgn | Ear99 | 8541.10.0080 | 100 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 45 V | 660 mv @ 60 a | 5 ma @ 45 V | -65 ° C ~ 150 ° C. | 60a | - - - | |||||||||||||||||
![]() | MSRTA60060A | 109,2000 | ![]() | 8253 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Drei -Turf | MSRTA60060 | Standard | Drei -Turf | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 600 V | 600A (DC) | 1,2 V @ 600 a | 25 µa @ 600 V | -40 ° C ~ 175 ° C. | ||||||||||||||||||
![]() | MSRTA6001R | 109,2000 | ![]() | 6261 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | 3-smd-modul | MSRTA6001 | - - - | Drei -Turf | - - - | ROHS -KONFORM | 1 (unbegrenzt) | MSRTA6001Rgn | Ear99 | 8541.10.0080 | 25 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | - - - | 1600 v | 600A (DC) | -55 ° C ~ 150 ° C. | |||||||||||||||||||
![]() | Mur40010ct | 132.0780 | ![]() | 3476 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Twin Tower | Mur40010 | Standard | Twin Tower | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Mur40010ctgn | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 100 v | 200a | 1,3 V @ 125 a | 90 ns | 25 µa @ 50 V | |||||||||||||||||
![]() | S12KR | 4.2345 | ![]() | 2976 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | S12K | Standard, Umgekehrte Polarität | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S12KRgn | Ear99 | 8541.10.0080 | 250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 800 V | 1,1 V @ 12 a | 10 µa @ 50 V | -65 ° C ~ 175 ° C. | 12a | - - - | |||||||||||||||||
![]() | MBR20060Ctr | 90.1380 | ![]() | 4535 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Twin Tower | MBR20060 | Schottky | Twin Tower | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBR20060Ctrgn | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 60 v | 200a (DC) | 750 mV @ 100 a | 5 ma @ 20 v | ||||||||||||||||||
![]() | MBR30045CT | 94.5030 | ![]() | 7555 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Twin Tower | MBR30045 | Schottky | Twin Tower | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBR30045CTGN | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 45 V | 150a | 650 mv @ 150 a | 8 ma @ 20 v | -55 ° C ~ 150 ° C. | |||||||||||||||||
![]() | Murta20040r | 145.3229 | ![]() | 4975 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Drei -Turf | Murta20040 | Standard | Drei -Turf | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 24 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 400 V | 100a | 1,3 V @ 100 a | 25 µA @ 400 V | -55 ° C ~ 150 ° C. | ||||||||||||||||||
![]() | MBR60030Ctrl | - - - | ![]() | 7697 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Twin Tower | Schottky | Twin Tower | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 30 v | 300a | 580 mv @ 300 a | 3 ma @ 30 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||||
![]() | MBR40040CTL | - - - | ![]() | 4528 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Twin Tower | Schottky | Twin Tower | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 40 v | 200a | 600 mv @ 200 a | 3 ma @ 40 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||||
![]() | Murh10005 | - - - | ![]() | 5648 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | D-67 | Standard | D-67 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Murh10005gn | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 50 v | 1,3 V @ 100 a | 75 ns | 25 µa @ 50 V | 100a | - - - | ||||||||||||||||||
![]() | MBR40030CTL | - - - | ![]() | 4971 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Twin Tower | Schottky | Twin Tower | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 30 v | 200a | 580 mv @ 200 a | 3 ma @ 30 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||||
![]() | MBRH12030R | 60.0375 | ![]() | 1216 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | D-67 | MBRH12030 | Schottky, Umgekehrte Polarität | D-67 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBRH12030Rgn | Ear99 | 8541.10.0080 | 36 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 650 mV @ 120 a | 4 ma @ 20 v | 120a | - - - | ||||||||||||||||||
![]() | S25BR | 5.2485 | ![]() | 2966 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | S25B | Standard, Umgekehrte Polarität | - - - | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S25BRGN | Ear99 | 8541.10.0080 | 250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 100 v | 1,1 V @ 25 a | 10 µa @ 50 V | -65 ° C ~ 175 ° C. | 25a | - - - | |||||||||||||||||
![]() | 150 KR100A | 35.5695 | ![]() | 4122 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-205AA, DO-8, Stud | Standard, Umgekehrte Polarität | DO-205AA (DO-8) | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 150KR100AGN | Ear99 | 8541.10.0080 | 10 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1000 v | 1,33 V @ 150 a | 24 mA @ 1000 v | -40 ° C ~ 200 ° C. | 150a | - - - | ||||||||||||||||||
![]() | MBRT50040 | - - - | ![]() | 2727 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBRT50040GN | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 40 v | 250a | 750 MV @ 250 a | 1 ma @ 20 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||
![]() | MBRF20030R | - - - | ![]() | 2084 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 30 v | 100a | 700 mV @ 100 a | 1 ma @ 30 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||||
![]() | MBR300200Ctr | 94.5030 | ![]() | 9237 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Twin Tower | MBR300200 | Schottky | Twin Tower | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 200 v | 150a | 920 MV @ 150 a | 3 ma @ 200 v | -40 ° C ~ 150 ° C. | ||||||||||||||||||
![]() | FR85J05 | 23.1210 | ![]() | 7253 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AB, DO-5, Stud | Standard | Do-5 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | FR85J05GN | Ear99 | 8541.10.0080 | 100 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,4 V @ 85 a | 500 ns | 25 µa @ 100 V | -40 ° C ~ 125 ° C. | 85a | - - - | |||||||||||||||||
![]() | GA100SCPL12-227E | - - - | ![]() | 2987 | 0.00000000 | Genesic Semiconductor | - - - | Rohr | Veraltet | - - - | - - - | - - - | GA100 | - - - | - - - | - - - | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 10 | - - - | - - - | - - - | - - - | - - - | - - - | - - - | - - - | |||||||||||||||
![]() | MBR3530 | 14.3280 | ![]() | 4223 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | Schottky | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBR3530gn | Ear99 | 8541.10.0080 | 250 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 680 mv @ 35 a | 1,5 mA @ 20 v | -55 ° C ~ 150 ° C. | 35a | - - - | ||||||||||||||||||
![]() | MBRF400100R | - - - | ![]() | 5366 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 100 v | 200a | 840 mv @ 200 a | 1 ma @ 100 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||||
KBPC25010T | 1.8979 | ![]() | 3621 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, KBPC-T | KBPC25010 | Standard | KBPC-T | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 12.5 a | 5 µA @ 1000 V | 25 a | Einphase | 1 kv | ||||||||||||||||||||
![]() | MBRH120150 | 60.0375 | ![]() | 3320 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | D-67 | Schottky | D-67 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 36 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 150 v | 880 mv @ 120 a | 1 mA @ 150 V | -55 ° C ~ 150 ° C. | 120a | - - - | |||||||||||||||||||
![]() | S25Q | 5.2485 | ![]() | 1118 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | Standard | - - - | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S25qgn | Ear99 | 8541.10.0080 | 250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1200 V | 1,1 V @ 25 a | 10 µa @ 50 V | -65 ° C ~ 175 ° C. | 25a | - - - | ||||||||||||||||||
![]() | MBRT120150R | - - - | ![]() | 5224 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 150 v | 60a | 880 mv @ 60 a | 1 mA @ 150 V | -55 ° C ~ 150 ° C. | |||||||||||||||||||
![]() | MBRT40020L | - - - | ![]() | 5515 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 20 v | 200a | 580 mv @ 200 a | 3 ma @ 20 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||||
![]() | MBRT12045 | 75.1110 | ![]() | 8752 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis -berg | Drei -Turf | Schottky | Drei -Turf | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | MBRT12045GN | Ear99 | 8541.10.0080 | 40 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 45 V | 60a | 750 mV @ 60 a | 1 ma @ 20 v | -55 ° C ~ 150 ° C. | ||||||||||||||||||
![]() | MBRF20060 | - - - | ![]() | 2192 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | To-244ab | Schottky | To-244ab | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 60 v | 100a | 750 mV @ 100 a | 1 ma @ 60 v | -55 ° C ~ 150 ° C. |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus