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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Diodentyp | Spannung - Peak Reverse (max) |
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![]() | KBP208G | 0,2280 | ![]() | 3867 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBP | KBP208 | Standard | KBP | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | KBP208GGS | Ear99 | 8541.10.0080 | 500 | 1,1 V @ 2 a | 10 µa @ 50 V | 2 a | Einphase | 800 V | |||||||||||||||||||
![]() | Gbj6j | 0,6645 | ![]() | 4675 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ6 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ6J | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 3 a | 5 µa @ 600 V | 6 a | Einphase | 600 V | ||||||||||||||||||||
![]() | Gbj6b | 0,6645 | ![]() | 9226 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ6 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ6B | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 3 a | 5 µa @ 100 V. | 6 a | Einphase | 100 v | ||||||||||||||||||||
![]() | GBJ30G | 1.1205 | ![]() | 5909 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ30 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj30g | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 15 a | 5 µa @ 400 V | 30 a | Einphase | 400 V | ||||||||||||||||||||
![]() | GBPC15010T | 1.8979 | ![]() | 8514 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC-T | GBPC15010 | Standard | GBPC-T | - - - | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 7,5 a | 5 µA @ 1000 V | 15 a | Einphase | 1 kv | ||||||||||||||||||||
![]() | GBPC25005W | 2.5335 | ![]() | 5871 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | GBPC25005 | Standard | Gbpc-w | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | GBPC25005WGS | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 7,5 a | 5 µa @ 50 V | 25 a | Einphase | 50 v | |||||||||||||||||||
![]() | Gbj20d | 0,9120 | ![]() | 6810 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ20 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj20d | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 10 a | 5 µa @ 200 V. | 20 a | Einphase | 200 v | ||||||||||||||||||||
![]() | M3P100A-80 | - - - | ![]() | 3281 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 5-SMD-Modul | Standard | 5-smd | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 24 | 1,15 V @ 100 a | 10 mA @ 800 V | 100 a | DRIPHASE | 800 V | ||||||||||||||||||||||
![]() | KBU8K | 0,7425 | ![]() | 6174 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | KBU8 | Standard | KBU | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | KBU8KGN | Ear99 | 8541.10.0080 | 400 | 1 V @ 8 a | 10 µa @ 800 V | 8 a | Einphase | 800 V | |||||||||||||||||||
![]() | GBPC5004W | 4.0155 | ![]() | 6179 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | GBPC5004 | Standard | Gbpc-w | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,2 V @ 25 a | 5 µa @ 400 V | 50 a | Einphase | 400 V | ||||||||||||||||||||
![]() | DB155G | 0,2325 | ![]() | 6311 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-EDIP (0,321 ", 8,15 mm) | DB155 | Standard | Db | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | DB155GGN | Ear99 | 8541.10.0080 | 2.500 | 1,1 V @ 1,5 a | 5 µa @ 600 V | 1,5 a | Einphase | 600 V | |||||||||||||||||||
![]() | Gbj6d | 0,6645 | ![]() | 1569 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ6 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj6d | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 3 a | 5 µa @ 200 V. | 6 a | Einphase | 200 v | ||||||||||||||||||||
![]() | M3P75a-60 | - - - | ![]() | 6517 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | 5-SMD-Modul | Standard | 5-smd | - - - | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 24 | 10 µa @ 600 V | 75 a | DRIPHASE | 600 V | |||||||||||||||||||||||
![]() | S150JR | 35.5695 | ![]() | 1323 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-205AA, DO-8, Stud | S150 | Standard, Umgekehrte Polarität | DO-205AA (DO-8) | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S150JRgn | Ear99 | 8541.10.0080 | 10 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,2 V @ 150 a | 10 µa @ 600 V | -65 ° C ~ 200 ° C. | 150a | - - - | ||||||||||||||||||
![]() | GBPC1508T | 2.4180 | ![]() | 8094 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC | GBPC1508 | Standard | GBPC | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 7,5 a | 5 µa @ 800 V | 15 a | Einphase | 800 V | ||||||||||||||||||||
![]() | GBPC1510T | 2.4180 | ![]() | 2180 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, GBPC | GBPC1510 | Standard | GBPC | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 7,5 a | 5 µA @ 1000 V | 15 a | Einphase | 1 kv | ||||||||||||||||||||
KBPC5010T | 4.2700 | ![]() | 331 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, KBPC-T | KBPC5010 | Standard | KBPC-T | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 25 a | 5 µA @ 1000 V | 50 a | Einphase | 1 kv | |||||||||||||||||||||
KBPC50005T | 2.5875 | ![]() | 9886 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, KBPC-T | KBPC50005 | Standard | KBPC | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 25 a | 5 µa @ 50 V | 50 a | Einphase | 50 v | |||||||||||||||||||||
![]() | GD05MPS17J | - - - | ![]() | 1326 | 0.00000000 | Genesic Semiconductor | - - - | Rohr | Aktiv | GD05mps | - - - | 1242-GD05MPS17J | Ear99 | 8541.10.0080 | 1 | |||||||||||||||||||||||||||||||
![]() | KBP204 | 0,3750 | ![]() | 8785 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBP | Standard | KBP | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | KBP204GN | Ear99 | 8541.10.0080 | 2.000 | 1,1 V @ 2 a | 10 µa @ 50 V | 2 a | Einphase | 400 V | ||||||||||||||||||||
FR85JR05 | 27.9100 | ![]() | 19 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AB, DO-5, Stud | Standard, Umgekehrte Polarität | Do-5 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 100 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,4 V @ 85 a | 500 ns | 25 µa @ 100 V | -40 ° C ~ 125 ° C. | 85a | - - - | ||||||||||||||||||||
![]() | Gbj30d | 1.1205 | ![]() | 7632 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ30 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-gbj30d | Ear99 | 8541.10.0080 | 200 | 1,05 V @ 15 a | 5 µa @ 200 V. | 30 a | Einphase | 200 v | ||||||||||||||||||||
BR84 | 0,8910 | ![]() | 1683 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 125 ° C (TJ) | K. Loch | 4 Quadratmeter, BR-8 | Standard | BR-8 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | BR84GN | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 1 a | 10 µa @ 400 V | 8 a | Einphase | 400 V | |||||||||||||||||||||
![]() | MBR60045Ctrl | - - - | ![]() | 5064 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Veraltet | Chassis -berg | Twin Tower | Schottky | Twin Tower | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 25 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 45 V | 300a | 600 mv @ 300 a | 5 ma @ 45 V | -55 ° C ~ 150 ° C. | |||||||||||||||||||||
![]() | GBJ35B | 1.6410 | ![]() | 1019 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, GBJ | GBJ35 | Standard | Gbj | Herunterladen | ROHS3 -KONFORM | 1242-GBJ35B | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 17.5 a | 10 µa @ 100 V. | 35 a | Einphase | 100 v | ||||||||||||||||||||
![]() | S6mr | 3.8625 | ![]() | 4228 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | S6m | Standard, Umgekehrte Polarität | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | S6mrgn | Ear99 | 8541.10.0080 | 250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1000 v | 1,1 V @ 6 a | 10 µa @ 100 V. | -65 ° C ~ 175 ° C. | 6a | - - - | ||||||||||||||||||
![]() | GD20MPS12A | 8.4800 | ![]() | 1 | 0.00000000 | Genesic Semiconductor | Sic Schottky MPS ™ | Rohr | Aktiv | K. Loch | To-220-2 | GD20 | SIC (Silicon Carbide) Schottky | To-220-2 | Herunterladen | 1 (unbegrenzt) | 1242-GD20MPS12A | Ear99 | 8541.10.0080 | 50 | Keine Erholungszeit> 500 mA (IO) | 1200 V | 1,8 V @ 20 a | 0 ns | 10 µa @ 1200 V | -55 ° C ~ 175 ° C. | 42a | 737PF @ 1V, 1 MHz | ||||||||||||||||||
![]() | 1N1199ar | 4.2345 | ![]() | 2646 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | Chassis, Stollenberg | DO-203AA, DO-4, Stud | 1N1199ar | Standard, Umgekehrte Polarität | Do-4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 1242-1028 | Ear99 | 8541.10.0080 | 250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 50 v | 1,1 V @ 12 a | 10 µa @ 50 V | -65 ° C ~ 200 ° C. | 12a | - - - | ||||||||||||||||||
GBPC3504T | 4.6200 | ![]() | 467 | 0.00000000 | Genesic Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC-T | GBPC3504 | Standard | GBPC-T | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.10.0080 | 50 | 1,1 V @ 12.5 a | 5 µa @ 400 V | 35 a | Einphase | 400 V | |||||||||||||||||||||
![]() | G3R75MT12D | 10.5000 | ![]() | 3 | 0.00000000 | Genesic Semiconductor | G3R ™ | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | G3R75 | Sicfet (Silziumkarbid) | To-247-3 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 1242-G3R75MT12D | Ear99 | 8541.29.0095 | 30 | N-Kanal | 1200 V | 41a (TC) | 15 v | 90 MOHM @ 20A, 15 V | 2,69 V @ 7,5 mA | 54 NC @ 15 V | ± 15 V | 1560 PF @ 800 V | - - - | 207W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus