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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | ASS8050-L-HF | 0,0682 | ![]() | 5190 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | ASS8050 | 300 MW | SOT-23-3 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-Ass8050-H-Hftr | Ear99 | 8541.21.0075 | 3.000 | 25 v | 1,5 a | 100NA (ICBO) | Npn | 500mv @ 80 mA, 800 mA | 120 @ 100 mA, 1V | 100 MHz | |||||||||||||||||
![]() | AS9013-J-HF | 0,0640 | ![]() | 9735 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Lets Kaufen | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | AS9013 | 300 MW | SOT-23-3 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-as9013-J-Hftr | Ear99 | 8541.21.0075 | 3.000 | 25 v | 500 mA | 100na | Npn | 600mv @ 50 mA, 500 mA | 300 @ 50 Ma, 1V | 150 MHz | |||||||||||||||||
![]() | DTC113ZCA-HF | 0,0529 | ![]() | 4883 | 0.00000000 | Comchip -technologie | DTC113ZCA-HF | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | DTC113 | 200 MW | SOT-23-3 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-DTC113ZCA-HFTR | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 500NA | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 33 @ 10ma, 5v | 250 MHz | 1 Kohms | 10 Kohms | ||||||||||||||||
![]() | DTC114WCA-HF | 0,0529 | ![]() | 9827 | 0.00000000 | Comchip -technologie | DTC114WCA-HF | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | DTC114 | 200 MW | SOT-23-3 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-DTC114WCA-HFTR | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 500NA | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 24 @ 10ma, 5V | 250 MHz | 10 Kohms | 4.7 Kohms | ||||||||||||||||
![]() | AS9013-L-HF | 0,0640 | ![]() | 2641 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Lets Kaufen | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | AS9013 | 300 MW | SOT-23-3 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-as9013-h-Hftr | Ear99 | 8541.21.0075 | 3.000 | 25 v | 500 mA | 100na | Npn | 600mv @ 50 mA, 500 mA | 120 @ 50 Ma, 1V | 150 MHz | |||||||||||||||||
![]() | ABC858BW-HF | 0,0800 | ![]() | 8852 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | ABC858 | 200 MW | SOT-323 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-ABC858BW-HFTR | Ear99 | 8541.21.0075 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 220 @ 2MA, 5V | 250 MHz | |||||||||||||||||
![]() | ABC857AW-HF | 0,0800 | ![]() | 9514 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | ABC857 | 200 MW | SOT-323 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-ABC857AW-HFTR | Ear99 | 8541.21.0075 | 3.000 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 125 @ 2MA, 5V | 250 MHz | |||||||||||||||||
![]() | DTA123YCA-HF | 0,0529 | ![]() | 8320 | 0.00000000 | Comchip -technologie | DTA123YCA-HF | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Dta123 | 200 MW | SOT-23-3 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | 641-DTA123YCA-HFTR | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 500NA | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 33 @ 10ma, 5v | 250 MHz | 2.2 Kohms | 10 Kohms | ||||||||||||||||
![]() | BC857CW-G | 0,0450 | ![]() | 5149 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | BC857 | 150 MW | SOT-323 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 100 MHz | |||||||||||||||||
![]() | CMS2301T-HF | - - - | ![]() | 2674 | 0.00000000 | Comchip -technologie | CMS | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | - - - | 641-CMS2301T-HF | Ear99 | 8541.29.0095 | 1 | P-Kanal | 20 v | 3a (ta) | 2,5 V, 4,5 V. | 110MOHM @ 3a, 4,5 V. | 1V @ 250 ähm | 12 NC @ 2,5 V. | ± 12 V | 405 PF @ 10 V. | - - - | 1W (TA) | ||||||||||||||||
![]() | CMS2010-HF | - - - | ![]() | 4456 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | CMS2010 | MOSFET (Metalloxid) | 1,5 W (TA) | 8-tssop | - - - | 641-CMS2010-Hftr | Ear99 | 8541.29.0095 | 1 | 2 N-Kanal (dual) gemeinsame Abfluss | 20V | 7a (ta) | 18mohm @ 6,5a, 4,5 V. | 900 MV @ 250 ähm | 15nc @ 4,5 V | 1150pf @ 10v | - - - | |||||||||||||||||
![]() | MMBT2222A-G | 0,3000 | ![]() | 70 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT2222 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 40 v | 600 mA | 10na | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10mV | 300 MHz | |||||||||||||||||
![]() | CMS2305A-HF | - - - | ![]() | 3841 | 0.00000000 | Comchip -technologie | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | - - - | 641-CMS2305A-HF | Ear99 | 8541.29.0095 | 1 | P-Kanal | 30 v | 3.2a (ta) | 1,8 V, 10 V. | 25mohm @ 10a, 10V | 1,2 V @ 250 ähm | 10 NC @ 4,5 V. | ± 12 V | 735 PF @ 25 V. | - - - | 1,38W (TA) | ||||||||||||||||
![]() | CMS03P06T6-HF | 0,2077 | ![]() | 5296 | 0.00000000 | Comchip -technologie | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | |||||||||||||||||||||||||||||||
![]() | CMS45N10H8-HF | 1.2800 | ![]() | 2 | 0.00000000 | Comchip -technologie | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | P-Pak (5x6) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-CMS45N10H8-HF | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 45a (TC) | 4,5 V, 10 V. | 20mohm @ 10a, 10V | 2,5 V @ 250 ähm | 16.2 NC @ 10 V. | ± 20 V | 1003.9 PF @ 50 V | - - - | 94.7W (TC) | ||||||||||||||
![]() | CMS10N10Q8-HF | - - - | ![]() | 7858 | 0.00000000 | Comchip -technologie | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | - - - | 641-CMS10N10Q8-HF | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 10a (ta) | 4,5 V, 10 V. | 25,5 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 31 NC @ 10 V | ± 20 V | 1519 PF @ 30 V | - - - | 2,5 W (TA) | ||||||||||||||||
![]() | CMS42N06V8-HF | - - - | ![]() | 9043 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-PDFN (SPR-PAK) (3,3 x 3,3) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-CMS42N06V8-HFTR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 42a (TC) | 4,5 V, 10 V. | 12mohm @ 10a, 10V | 2,2 V @ 250 ähm | 39,2 NC @ 10 V. | ± 20 V | 2100 PF @ 25 V | - - - | 2W (TA), 52W (TC) | ||||||||||||||
![]() | CMS25N10D-HF | - - - | ![]() | 8972 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | CMS25 | MOSFET (Metalloxid) | D-Pak (to-252) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-CMS25N10D-HFTR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 100 v | 25a (TC) | 4,5 V, 10 V. | 48mohm @ 25a, 10V | 2,5 V @ 250 ähm | 60 nc @ 10 v | ± 20 V | 3848 PF @ 15 V | - - - | 2W (TA), 60 W (TC) | |||||||||||||
![]() | CMS23P04D-HF | - - - | ![]() | 2360 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | D-Pak (to-252) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-CMS23P04D-HFTR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 40 v | 23a (TC) | 4,5 V, 10 V. | 40mohm @ 18a, 10V | 2,5 V @ 250 ähm | 9 NC @ 4,5 V. | ± 20 V | 1004 PF @ 15 V | - - - | 2W (TA), 31,3W (TC) | ||||||||||||||
![]() | CMS11N10Q8-HF | - - - | ![]() | 7891 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-Sop | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-cms11n10q8-hftr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 11a (ta) | 4,5 V, 10 V. | 14mohm @ 10a, 10V | 2,4 V @ 250 ähm | 75 NC @ 10 V | ± 20 V | 4708 PF @ 25 V. | - - - | 3.1W (TA) | ||||||||||||||
![]() | CMS03N06T-HF | - - - | ![]() | 9871 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | 1 (unbegrenzt) | 641-CMS03N06T-HFTR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 3a (ta) | 4,5 V, 10 V. | 105mohm @ 3a, 10V | 2v @ 250 ähm | 14.6 NC @ 10 V. | ± 20 V | 510 PF @ 30 V | - - - | 1.7W (TA) | |||||||||||||||
![]() | CEH2315-HF | 0,1823 | ![]() | 7430 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-CEH2315-Hftr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 5a (ta) | 4,5 V, 10 V. | 50MOHM @ 3,8a, 10V | 3v @ 250 ähm | 11.2 NC @ 10 V | ± 20 V | 650 PF @ 15 V | - - - | 2W | ||||||||||||||
![]() | MMBTA13-HF | 0,0732 | ![]() | 9282 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-MMBTA13-HFTR | Ear99 | 8541.21.0095 | 3.000 | 30 v | 300 ma | 100na | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||
![]() | ABC857B-HF | 0,0506 | ![]() | 8017 | 0.00000000 | Comchip -technologie | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 250 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-ABC857B-HFTR | Ear99 | 8541.21.0095 | 3.000 | 45 V | 100 ma | 15NA (ICBO) | 650 mv @ 5ma, 100 mA | 220 @ 2MA, 5V | 100 MHz | |||||||||||||||||||
![]() | CMSP2011A6-HF | 0,2494 | ![]() | 3243 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | MOSFET (Metalloxid) | DFNWB2X2-6L-J | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-CMSP2011A6-Hftr | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 11a (ta) | 2,5 V, 4,5 V. | 24MOHM @ 7.2A, 4,5 V. | 1V @ 250 ähm | 35 NC @ 4,5 V. | ± 12 V | 1580 PF @ 6 V | - - - | 750 MW (TA) | ||||||||||||||
![]() | 2SC1623-L6-HF | 0,0396 | ![]() | 3239 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-2SC1623-L6-HFTR | Ear99 | 8541.21.0095 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | 300mv @ 10 mA, 100 mA | 200 @ 1ma, 6v | 250 MHz | |||||||||||||||||||
![]() | MMBTA14-HF | 0,0732 | ![]() | 8034 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-MMBTA14-HFTR | Ear99 | 8541.21.0095 | 3.000 | 30 v | 300 ma | 100na | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 20000 @ 100ma, 5V | 125 MHz | ||||||||||||||||||
![]() | CMS25P06H8-HF | 0,3947 | ![]() | 9879 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | CMS25 | MOSFET (Metalloxid) | 8-PDFN (5x6) | - - - | 1 (unbegrenzt) | 641-CMS25P06H8-HFTR | 5.000 | P-Kanal | 60 v | 25a (ta) | 4,5 V, 10 V. | 55mohm @ 4.1a, 10V | 2v @ 250 ähm | 23 NC @ 10 V | ± 20 V | 1408 PF @ 30 V | - - - | 35W (TC) | ||||||||||||||||
![]() | 2N3906-HF | 0,0638 | ![]() | 6890 | 0.00000000 | Comchip -technologie | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 2N3906 | 625 MW | To-92 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-2N3906-HF | Ear99 | 8541.21.0075 | 1.000 | 40 v | 200 ma | 50na | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||
![]() | BSS138W-G | 0,0630 | ![]() | 8681 | 0.00000000 | Comchip -technologie | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | BSS138 | MOSFET (Metalloxid) | SOT-323 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 641-BSS138W-GTR | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 50 v | 200 Ma (TC) | 10V | 3,5 Ohm @ 220a, 10 V | 1,5 V @ 250 ähm | ± 20 V | 50 PF @ 10 V | - - - | 200 MW (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus