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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Spannung - Ausgang | FET -Typ | Stromspannung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Strom Abfluss (ID) - Maximal | Spannung - Offset (VT) | Strom - Tor zu Anodenleckage (Igao) | Strom - tal (iv) | Strom - Peak |
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![]() | Cen1235 tr | - - - | ![]() | 5256 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 1514-CEN1235TR | Veraltet | 1.000 | |||||||||||||||||||||||||||||||||||||||
![]() | CDM2208-800FP | - - - | ![]() | 7289 | 0.00000000 | Central Semiconductor Corp | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220fp | Herunterladen | 1 (unbegrenzt) | 1514-CDM2208-800FP | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 8a (TC) | 10V | 1,6OHM @ 4a, 10V | 4v @ 250 ähm | 24.45 NC @ 10 V | 30V | 1110 PF @ 25 V | - - - | 57W (TC) | |||||||||||||||||||||||
![]() | CP375-CWDM3011N-WN | - - - | ![]() | 9854 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | MOSFET (Metalloxid) | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 1514-CP375-CWDM3011N-WN | Ear99 | 8541.29.0040 | 18.670 | N-Kanal | 30 v | 11a (ta) | 4,5 V, 10 V. | 20mohm @ 11a, 10V | 3v @ 250 ähm | 6.3 NC @ 5 V. | ± 20 V | 860 PF @ 15 V | - - - | 2.5W | ||||||||||||||||||||||
![]() | CP337V-2N4013-CT20 | - - - | ![]() | 3343 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | 360 MW | Sterben | Herunterladen | 1514-CP337V-2N4013-CT20 | Ear99 | 8541.21.0040 | 20 | 30 v | 1 a | 10 µA | Npn | 750 mv @ 100 mA, 1a | 60 @ 100 mA, 1V | 300 MHz | ||||||||||||||||||||||||||||
![]() | 2N3725a pbfree | - - - | ![]() | 2483 | 0.00000000 | Central Semiconductor Corp | - - - | Kasten | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205ad, bis 39-3 Metall Kann | 1 w | To-39 | Herunterladen | 1514-2N3725APBFREE | Ear99 | 8541.29.0095 | 500 | 50 v | 1.2 a | 10 µA | Npn | 900mv @ 100 mA, 1a | 60 @ 100 mA, 1V | 300 MHz | ||||||||||||||||||||||||||||
![]() | CEDM7001VL BK | - - - | ![]() | 4282 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-101, SOT-883 | MOSFET (Metalloxid) | SOT-883VL | Herunterladen | 1 (unbegrenzt) | 1514-CEDM7001VLBK | Ear99 | 8541.21.0095 | 1 | N-Kanal | 20 v | 100 mA (ta) | 1,5 V, 4V | 3OHM @ 10MA, 4V | 900 MV @ 250 ähm | 0,566 NC @ 4,5 V. | 10V | 9 PF @ 3 v | - - - | 100 MW (TA) | |||||||||||||||||||||||
![]() | CP226V-2N4393-CT20 | - - - | ![]() | 4975 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Sterben | 1,8 w | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP226V-2N4393-CT20 | Ear99 | 8541.29.0095 | 20 | N-Kanal | 40 v | 20pf @ 20V | 40 v | 5 ma @ 3 v | 500 mV @ 1 na | 100 Ohm | 50 ma | ||||||||||||||||||||||||
![]() | PN3646 Zinn/Blei | - - - | ![]() | 8838 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | Herunterladen | 1 (unbegrenzt) | 1514-PN3646Tin/Lead | Ear99 | 8541.21.0075 | 2.500 | |||||||||||||||||||||||||||||||||||||||
![]() | PN3646 TRE PBFREE | - - - | ![]() | 9874 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | Herunterladen | 1 (unbegrenzt) | 1514-PN3646Trepbfreetr | Ear99 | 8541.21.0075 | 2.000 | |||||||||||||||||||||||||||||||||||||||
![]() | 2N3820 | - - - | ![]() | 8008 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 360 MW | To-92 | Herunterladen | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 20 v | 32pf @ 10v | 20 v | 300 mA @ 10 v | 8 V @ 10 µA | ||||||||||||||||||||||||||||||
![]() | 2N4870 | - - - | ![]() | 5533 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 125 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 300 MW | To-92 | Herunterladen | Nicht Anwendbar | Ear99 | 8541.21.0095 | 2.500 | - - - | PNP | - - - | - - - | - - - | ||||||||||||||||||||||||||||||
![]() | 2N6027 pbfree | 1.2383 | ![]() | 8585 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | To-226-3, bis 92-3 (to-226aa) | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.500 | 6v | 40V | 300 MW | 1,6 v | 10 Na | 50 µA | 2 µA | |||||||||||||||||||||||||||||||
![]() | CP647-MJ11013-WS | - - - | ![]() | 5114 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP647 | Sterben | - - - | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0040 | 1 | 90 v | 30 a | 1ma | PNP - Darlington | 4v @ 300 mA, 30a | 200 @ 30a, 5V | - - - | ||||||||||||||||||||||||||
![]() | CP647-PMD19K100-WS | - - - | ![]() | 7637 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP647 | Sterben | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0040 | 1 | 100 v | 30 a | - - - | PNP - Darlington | 2,8 V @ 60 Ma, 15a | 800 @ 15a, 3V | 4MHz | ||||||||||||||||||||||||||
![]() | CP547-2N6287-cm | - - - | ![]() | 4810 | 0.00000000 | Central Semiconductor Corp | CP547 | Tablett | Veraltet | Oberflächenhalterung | Sterben | Sterben | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Veraltet | 0000.00.0000 | 49 | |||||||||||||||||||||||||||||||||||
![]() | CP547-2N6287-WN | - - - | ![]() | 2695 | 0.00000000 | Central Semiconductor Corp | CP547 | Tablett | Veraltet | Oberflächenhalterung | Sterben | Sterben | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Veraltet | 0000.00.0000 | 400 | |||||||||||||||||||||||||||||||||||
![]() | 2N3563 | - - - | ![]() | 4390 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | - - - | K. Loch | To-106-3 Gewölbt | To-106 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Veraltet | 0000.00.0000 | 2.500 | 12 v | 50na (ICBO) | Npn | - - - | 20 @ 8ma, 10V | 600 MHz | |||||||||||||||||||||||||||||
![]() | 2N3646 | - - - | ![]() | 7724 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-106-3 Gewölbt | 200 MW | To-106 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 2.500 | 15 v | 200 ma | 500NA | Npn | 500mv @ 30 mA, 300 mA | 30 @ 30 Ma, 400mV | 350 MHz | |||||||||||||||||||||||||||
2N4858a | 5.2200 | ![]() | 274 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 360 MW | To-18 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 10pf @ 10v (VGS) | 40 v | 8 ma @ 15 V | 800 mV @ 0,5 na | 60 Ohm | ||||||||||||||||||||||||||||
![]() | CXDM4060N TR PBFREE | 0,9000 | ![]() | 3 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-243aa | CXDM4060 | MOSFET (Metalloxid) | SOT-89 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 40 v | 6a (ta) | 4,5 V, 10 V. | 31mohm @ 6a, 10V | 3v @ 250 ähm | 12 NC @ 10 V | 20V | 730 PF @ 20 V | - - - | 1.2W (TA) | |||||||||||||||||||||
![]() | 2N5308 PBFREE | 1.3700 | ![]() | 1 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.500 | 40 v | 300 ma | 100NA (ICBO) | NPN - Darlington | 1,4 V @ 200 UA, 200 Ma | 7000 @ 2MA, 5V | 60 MHz | ||||||||||||||||||||||||||
![]() | 2N5551 Zinn/Blei | 1.0600 | ![]() | 2 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 160 v | 600 mA | 50na (ICBO) | Npn | 200mv @ 5ma, 50 mA | 80 @ 10ma, 5V | 300 MHz | ||||||||||||||||||||||||||
![]() | MJE13005 PBFREE | 2.8700 | ![]() | 459 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Lets Kaufen | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MJE13005 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | 400 V | 4 a | - - - | Npn | 1v @ 1a, 4a | 8 @ 2a, 5V | 4MHz | |||||||||||||||||||||||||
![]() | CEDM8001 TR PBFREE | 0,5600 | ![]() | 7 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-101, SOT-883 | CEDM8001 | MOSFET (Metalloxid) | SOT-883 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 8.000 | P-Kanal | 20 v | 100 mA (ta) | 1,5 V, 4V | 8ohm @ 10 ma, 4V | 1,1 V @ 250 ähm | 0,66 NC @ 4,5 V. | 10V | 45 PF @ 3 V. | - - - | 100 MW (TA) | |||||||||||||||||||||
![]() | BC808-16 BK | - - - | ![]() | 3339 | 0.00000000 | Central Semiconductor Corp | * | Schüttgut | Veraltet | - - - | 1514-BC808-16BK | Veraltet | 1 | |||||||||||||||||||||||||||||||||||||||||
![]() | 2N5306 pbfree | 0,2739 | ![]() | 6596 | 0.00000000 | Central Semiconductor Corp | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.500 | ||||||||||||||||||||||||||||||||||||||
![]() | 2N4250a | - - - | ![]() | 8368 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 200 MW | To-126 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.500 | 60 v | 10NA (ICBO) | PNP | 250 mV @ 500 µA, 10 mA | 250 @ 100 µA, 5V | - - - | ||||||||||||||||||||||||||||
![]() | TIP101 | - - - | ![]() | 1004 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 80 w | To-220-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | TIP101CS | Ear99 | 8541.29.0095 | 500 | 80 v | 8 a | 50 µA | NPN - Darlington | 2,5 V @ 80 Ma, 8a | 1000 @ 3a, 4V | 4MHz | ||||||||||||||||||||||||||
![]() | CP310-MPSA42-CT20 | 150.5200 | ![]() | 13 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP310 | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | CP310-MPSA42-CT20 PBFREE | Ear99 | 8541.21.0095 | 1 | 300 V | 500 mA | 100NA (ICBO) | Npn | 500 mv @ 2MA, 20 mA | 40 @ 30 ma, 10V | - - - | |||||||||||||||||||||||||
2N5191 | - - - | ![]() | 2961 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 40 w | To-126 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | 60 v | 4 a | 1ma | Npn | 1,4 V @ 1a, 4a | 25 @ 1,5a, 2v | 2MHz |
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