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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Spannung - Ausgang | FET -Typ | Gewinnen | Stromspannung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) | Strom Abfluss (ID) - Maximal | Spannung - Offset (VT) | Strom - Tor zu Anodenleckage (Igao) | Strom - tal (iv) | Strom - Peak |
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![]() | CP548-2N5116-CT | - - - | ![]() | 1205 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | Sterben | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0040 | 1 | P-Kanal | 600 mv | 25pf @ 15V | 30 v | 5 ma @ 15 V | 1 V @ 1 na | 150 Ohm | 50 ma | ||||||||||||||||||||||||||||||
![]() | Cen1372 bk | - - - | ![]() | 6278 | 0.00000000 | Central Semiconductor Corp | - - - | Kasten | Veraltet | - - - | - - - | - - - | - - - | - - - | 1 (unbegrenzt) | Cen1372BK | Veraltet | 0000.00.0000 | 1 | - - - | - - - | - - - | - - - | - - - | ||||||||||||||||||||||||||||||||
![]() | CP788X-2N2605-WN | - - - | ![]() | 4727 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | Sterben | 400 MW | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP788X-2N2605-WN | Ear99 | 8541.29.0040 | 1 | 45 V | 30 ma | 10na | 500 mV @ 500 µA, 10 mA | 150 @ 500 µA, 5 V | |||||||||||||||||||||||||||||
![]() | CP101-BSS52-WN | - - - | ![]() | 3974 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | Sterben | 800 MW | Sterben | Herunterladen | UnberÜHrt Ereichen | 1514-CP101-BSS52-WN | Ear99 | 8541.21.0095 | 1 | 80 v | 1 a | 50na (ICBO) | NPN - Darlington | 1,6 V @ 4ma, 1a | 2000 @ 500 mA, 10V | - - - | |||||||||||||||||||||||||||||
![]() | CP219-2N5339-WN | - - - | ![]() | 4120 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | 6 w | Sterben | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0075 | 1 | 100 v | 5 a | 100 µA | Npn | 1,2 V @ 500 mA, 5a | 60 @ 2a, 2v | 30 MHz | ||||||||||||||||||||||||||||||
![]() | CP588-BCY70-WN | - - - | ![]() | 8494 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | Sterben | 350 MW | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 1514-CP588-BCY70-WN | Ear99 | 8541.21.0095 | 1 | 45 V | 200 ma | - - - | 250 mV @ 1ma, 10 mA | 60 @ 10 µa, 1V | ||||||||||||||||||||||||||||||
![]() | CMPDM202PH BK | - - - | ![]() | 7469 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-3 Flache Leitungen | MOSFET (Metalloxid) | SOT-23F | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.500 | P-Kanal | 20 v | 2.3a (TA) | 2,5 V, 5 V. | 88mohm @ 1,2a, 5V | 1,4 V @ 250 ähm | 12 NC @ 5 V | 12V | 800 PF @ 10 V | - - - | 350 MW (TA) | ||||||||||||||||||||||||||
![]() | TIP30A PBFREE | - - - | ![]() | 6432 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | TIP30 | 30 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | 60 v | 1 a | 300 µA | PNP | 700 MV @ 125 Ma, 1a | 40 @ 200 Ma, 4V | 3MHz | ||||||||||||||||||||||||||||
2N5320 pbfree | 3.0000 | ![]() | 316 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205ad, bis 39-3 Metall Kann | 10 w | To-39 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 500 | 75 V | 2 a | 500NA (ICBO) | Npn | 500 mv @ 50 mA, 500 mA | 30 @ 500 mA, 4V | 50 MHz | |||||||||||||||||||||||||||||
![]() | CP247-2N6284-CM | - - - | ![]() | 7287 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Aktiv | - - - | CP247 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP247-2N6284-CM | 0000.00.0000 | 1 | - - - | - - - | - - - | - - - | - - - | |||||||||||||||||||||||||||||||||
![]() | CTLDM7002A-M621 BK | - - - | ![]() | 5440 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powervfdfn | MOSFET (Metalloxid) | TLM621 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 5.000 | N-Kanal | 60 v | 280 Ma (TA) | 5v, 10V | 2OHM @ 500 mA, 10V | 2,5 V @ 250 ähm | 0,592 NC @ 4,5 V. | 40V | 50 PF @ 25 V. | - - - | 900 MW (TA) | ||||||||||||||||||||||||||
![]() | SE9300 | - - - | ![]() | 7468 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 70 w | To-220-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 400 | 60 v | 10 a | 200 µA (ICBO) | NPN - Darlington | 2,5 V @ 150 Ma, 7,5a | 100 @ 7,5a, 3V | - - - | ||||||||||||||||||||||||||||
2N4393 PBFREE | 3.0500 | ![]() | 3 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 1,8 w | To-18 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 14pf @ 20V | 40 v | 5 ma @ 20 v | 500 mV @ 1 na | 100 Ohm | ||||||||||||||||||||||||||||||
![]() | PN4302 | - - - | ![]() | 2745 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Verkäfer undefiniert | PN4302Cs | Ear99 | 8541.21.0095 | 2.500 | N-Kanal | - - - | 30 v | 500 µa @ 15 V | 4 V @ 1 na | |||||||||||||||||||||||||||||||
![]() | CMUDM7004 TR PBFREE | 0,6100 | ![]() | 13 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-523 | CMUDM7004 | MOSFET (Metalloxid) | SOT-523 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 450 Ma (TA) | 1,8 V, 4,5 V. | 460MOHM @ 200 Ma, 4,5 V. | 1V @ 250 ähm | 0,79 NC @ 4,5 V. | 8v | 45 PF @ 25 V. | - - - | 250 MW (TA) | |||||||||||||||||||||||
![]() | CP307-MPSA13-CT | - - - | ![]() | 5780 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | 625 MW | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 1514-CP307-MPSA13-CT | Ear99 | 8541.21.0075 | 400 | 30 v | 500 mA | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||||||||||||
2n2639 | - - - | ![]() | 4564 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | - - - | K. Loch | Bis 78-6 Metalldose | 2n263 | 600 MW | To-78-6 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 45 V | 30 ma | - - - | 2 NPN (Dual) | - - - | 50 @ 10 µa, 5 V | 40 MHz | ||||||||||||||||||||||||||||
![]() | MPSA18 PBFREE | 0,9600 | ![]() | 1 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MPSA18 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 2.500 | 45 V | 200 ma | 50na (ICBO) | Npn | 300mv @ 5ma, 50 mA | 500 @ 10ma, 5V | 100 MHz | |||||||||||||||||||||||||||
![]() | CDM22011-600LRFP SL | 2.3400 | ![]() | 580 | 0.00000000 | Central Semiconductor Corp | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | CDM22011 | MOSFET (Metalloxid) | To-220fp | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 11a (TC) | 10V | 360MOHM @ 5.5A, 10V | 4v @ 250 ähm | 23.05 NC @ 10 V | 30V | 763 PF @ 100 V | - - - | 25W (TC) | |||||||||||||||||||||||
![]() | 2N918 PBFREE | 6.3800 | ![]() | 1 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-206af, bis 72-4 Metall Kann | 200 MW | To-72 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | - - - | 15 v | 50 ma | Npn | 20 @ 3ma, 1V | 600 MHz | 6db @ 60 kHz | ||||||||||||||||||||||||||||
![]() | CP611-2N6107-cm | - - - | ![]() | 4157 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | CP611 | 40 w | Sterben | Herunterladen | UnberÜHrt Ereichen | 1514-CP611-2N6107-cm | Ear99 | 8541.29.0095 | 1 | 70 V | 7 a | 1ma | PNP | 3,5 V @ 3a, 7a | 30 @ 2a, 4V | 4MHz | ||||||||||||||||||||||||||||
![]() | CTLT853-M833S BK | - - - | ![]() | 1335 | 0.00000000 | Central Semiconductor Corp | - - - | Kasten | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | 2,5 w | TLM833S | Herunterladen | 1 (unbegrenzt) | CTLT853-M833SBK | Ear99 | 8541.29.0075 | 5.000 | 100 v | 6 a | 10na | Npn | 340mv @ 500 mA, 5a | 100 @ 2a, 2v | 190 MHz | |||||||||||||||||||||||||||||
![]() | CP247-2N6284-WN | - - - | ![]() | 4971 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | Sterben | 160 w | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 1514-CP247-2N6284-WN | Ear99 | 8541.29.0095 | 1 | 100 v | 20 a | 1ma | NPN - Darlington | 3v @ 200 Ma, 20a | 750 @ 10a, 3v | 4MHz | |||||||||||||||||||||||||||
![]() | CP210-2N4416-CT | - - - | ![]() | 8379 | 0.00000000 | Central Semiconductor Corp | - - - | Tablett | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Sterben | Sterben | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0040 | 1 | N-Kanal | 30 v | 4pf @ 15V | 30 v | 5 ma @ 20 v | 6 V @ 1 na | ||||||||||||||||||||||||||||||
![]() | PN4391 TRE | - - - | ![]() | 2529 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | PN4391 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 14pf @ 20V | 40 v | 50 mA @ 20 V | 4 V @ 1 na | 30 Ohm | ||||||||||||||||||||||||||||
![]() | CJD350 TR13 Zinn/Blei | - - - | ![]() | 8316 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 1514-CJD350TR13Tin/Leadtr | Ear99 | 8541.29.0095 | 2.500 | 300 V | 500 mA | 100 µA | PNP | 2,6 V @ 10 Ma, 100 mA | 30 @ 50 Ma, 10 V | 10 MHz | ||||||||||||||||||||||||||||
![]() | CMPDM303NH TR | - - - | ![]() | 8466 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-3 Flache Leitungen | MOSFET (Metalloxid) | SOT-23F | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 3.6a (TA) | 2,5 V, 4,5 V. | 40mohm @ 1,8a, 4,5 V. | 1,2 V @ 250 ähm | 13 NC @ 4,5 V. | 12V | 590 PF @ 10 V. | - - - | 350 MW (TA) | |||||||||||||||||||||||||
![]() | MPQ3467 PBFREE | - - - | ![]() | 3988 | 0.00000000 | Central Semiconductor Corp | - - - | Rohr | Veraltet | - - - | K. Loch | 14 DIP (0,300 ", 7,62 mm) | MPQ3467 | 3W | To-116 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 25 | 40V | - - - | 200na (ICBO) | 4 PNP (Quad) | - - - | - - - | 125 MHz | |||||||||||||||||||||||||||
![]() | CMPP6027R TR | - - - | ![]() | 2536 | 0.00000000 | Central Semiconductor Corp | - - - | Band & Rollen (TR) | Veraltet | To-236-3, sc-59, SOT-23-3 | Herunterladen | 1 (unbegrenzt) | CMPP6027RTR | Ear99 | 8541.21.0095 | 3.000 | 6v | 40V | 167 MW | 1,6 v | 10 Na | 50 µA | 2 µA | |||||||||||||||||||||||||||||||||
![]() | CTLM7110-M832D BK | - - - | ![]() | 7515 | 0.00000000 | Central Semiconductor Corp | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TDFN Exponierte Pad | MOSFET (Metalloxid) | TLM832d | Herunterladen | 1514-CTLM7110-M832DBK | Ear99 | 8541.29.0095 | 1 | N-Kanal | 20 v | 1a (ta) | 1,5 V, 4,5 V. | 250 MOHM @ 100 Ma, 1,5 V. | 1,2 V @ 1ma | 2,4 NC @ 4,5 V. | 8v | 220 PF @ 10 V | Schottky Diode (Isolier) | 1,65W (TA) |
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