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E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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2N6790 | - - - | ![]() | 6717 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-205AF Metalldose | MOSFET (Metalloxid) | To-39 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 200 v | 3,5a (TC) | 10V | 800MOHM @ 2.25A, 10 V. | 4v @ 250 ähm | 14.3 NC @ 10 V. | ± 20 V | - - - | 800 MW (TC) | ||||||||||||||||||||||||
![]() | 2N6790U | - - - | ![]() | 5573 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-cccc | MOSFET (Metalloxid) | 18-ulcc (9.14x7.49) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 200 v | 2.8a (TC) | 10V | 800MOHM @ 2.25A, 10 V. | 4v @ 250 ähm | 14.3 NC @ 10 V. | ± 20 V | - - - | 800 MW (TC) | |||||||||||||||||||||||
![]() | MS1006 | - - - | ![]() | 8980 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C | Bolzenhalterung | M135 | 127W | M135 | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0075 | 1 | 14db | 55 v | 3.25a | Npn | 19 @ 1,4a, 6v | 30 MHz | - - - | ||||||||||||||||||||||||||||
![]() | SRF4427 | - - - | ![]() | 3283 | 0.00000000 | Microsemi Corporation | - - - | Band & Rollen (TR) | Veraltet | - - - | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | 1,5W | 8-so | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 2.500 | 17db ~ 18db | 18V | 400 ma | Npn | 20 @ 150 mA, 5V | 1,3 GHz | - - - | ||||||||||||||||||||||||||
![]() | 1517-110 m | - - - | ![]() | 2881 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | 55AW-1 | 350W | 55AW-1 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 7.3db ~ 8.6db | 70V | 9a | Npn | 20 @ 1a, 5V | 1,48 GHz ~ 1,65 GHz | - - - | |||||||||||||||||||||||||||
![]() | Jan2N6849U | - - - | ![]() | 7674 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/564 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-cccc | MOSFET (Metalloxid) | 18-ulcc (9.14x7.49) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 6,5a (TC) | 10V | 320mohm @ 6.5a, 10V | 4v @ 250 ähm | 34,8 NC @ 10 V. | ± 20 V | - - - | 800 MW (TA), 25W (TC) | |||||||||||||||||||||||
![]() | 64051 | - - - | ![]() | 9149 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | MS1000 | - - - | ![]() | 7020 | 0.00000000 | Microsemi Corporation | * | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | MS2200A | - - - | ![]() | 6040 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | APT30M85BVFRG | - - - | ![]() | 5926 | 0.00000000 | Microsemi Corporation | Power Mos V® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 [b] | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | N-Kanal | 300 V | 40a (TC) | 10V | 85mohm @ 500 mA, 10V | 4v @ 1ma | 195 NC @ 10 V. | ± 30 v | 4950 PF @ 25 V. | - - - | 300 W (TC) | ||||||||||||||||||||||||
SD1127 | - - - | ![]() | 7301 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | K. Loch | To-205ad, bis 39-3 Metall Kann | 8W | To-39 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 500 | 12 dB | 18V | 640 Ma | Npn | 10 @ 50 Ma, 5V | 175MHz | - - - | ||||||||||||||||||||||||||||
![]() | 64042 | - - - | ![]() | 1124 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | JANS2N3810L/Tr | - - - | ![]() | 6037 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/336 | Band & Rollen (TR) | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | Bis 78-6 Metalldose | 2N3810 | To-78-6 | Herunterladen | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 50 | 10 µA (ICBO) | 2 PNP (Dual) | 250 mV @ 100 µA, 1 mA | 150 @ 1ma, 5V | - - - | ||||||||||||||||||||||||||||||
![]() | 2N6250 | - - - | ![]() | 7477 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C. | K. Loch | To-204aa, to-3 | 6 w | To-204aa (to-3) | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 100 | 275 v | 10 a | 1ma | Npn | 1,5 V @ 1,25a, 10a | 8 @ 10a, 3v | - - - | |||||||||||||||||||||||||||
APT75GN120JDQ3G | - - - | ![]() | 4063 | 0.00000000 | Microsemi Corporation | - - - | Rohr | Abgebrochen bei Sic | -55 ° C ~ 150 ° C (TJ) | Chassis -berg | Isotop | 379 w | Standard | ISOTOP® | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 30 | Einzel | TRABENFELD STOPP | 1200 V | 124 a | 2,1 V @ 15V, 75a | 200 µA | NEIN | 4.8 NF @ 25 V. | ||||||||||||||||||||||||||
![]() | 2N6770 | - - - | ![]() | 4270 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-204ae | MOSFET (Metalloxid) | To-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 500 V | 12a (TC) | 10V | 500mohm @ 12a, 10V | 4v @ 250 ähm | 120 nc @ 10 v | ± 20 V | - - - | 4W (TA), 150W (TC) | |||||||||||||||||||||||
![]() | JantX2N7225U | - - - | ![]() | 4249 | 0.00000000 | Microsemi Corporation | Militär, MIL-PRF-19500/592 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-267ab | MOSFET (Metalloxid) | To-267ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 27,4a (TC) | 10V | 105mohm @ 27.4a, 10V | 4v @ 250 ähm | 115 NC @ 10 V | ± 20 V | - - - | 4W (TA), 150W (TC) | |||||||||||||||||||||||
![]() | APTGF30A60T1G | - - - | ![]() | 2272 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp1 | 140 w | Standard | Sp1 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Halbbrücke | Npt | 600 V | 42 a | 2,45 V @ 15V, 30a | 250 µA | Ja | 1,35 NF @ 25 V. | ||||||||||||||||||||||||||
![]() | APTGT75DSK60T3G | - - - | ![]() | 3703 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | SP3 | 250 w | Standard | SP3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Dual Buck Chopper | TRABENFELD STOPP | 600 V | 100 a | 1,9 V @ 15V, 75A | 250 µA | Ja | 4.62 NF @ 25 V. | |||||||||||||||||||||||||
![]() | JantX2N2857UB | - - - | ![]() | 1844 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | 3-smd, Keine Frotung | 200 MW | UB | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 21db | 15 v | 40 ma | Npn | 30 @ 3ma, 1v | - - - | 4,5 dB @ 450 MHz | ||||||||||||||||||||||||||
JantX2N4857 | - - - | ![]() | 1811 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-206aa, to-18-3 Metalldose | 360 MW | To-18 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 40 v | 18PF @ 10V (VGS) | 40 v | 100 mA @ 15 V | 6 V @ 500 pa | 40 Ohm | |||||||||||||||||||||||||||
![]() | MS2279 | - - - | ![]() | 5748 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | MPA201HS | - - - | ![]() | 9626 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | 40036st | - - - | ![]() | 4266 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | JANSR2N7262U | - - - | ![]() | 4017 | 0.00000000 | Microsemi Corporation | Militär, MIL-PRF-19500/601 | Tablett | Veraltet | -55 ° C ~ 150 ° C. | Oberflächenhalterung | 18-cccc | MOSFET (Metalloxid) | 18-ulcc (9.14x7.49) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 5.5a (TC) | 12V | 364mohm @ 5,5a, 12V | 4v @ 1ma | 50 nc @ 12 V | ± 20 V | - - - | 25W (TC) | |||||||||||||||||||||||||
![]() | SD1019 | - - - | ![]() | 2226 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C | Bolzenhalterung | M130 | 117W | M130 | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0075 | 1 | 4,5 dB | 35 V | 9a | Npn | 5 @ 500 mA, 5V | 136 MHz | - - - | ||||||||||||||||||||||||||||
![]() | APTGT150SK60TG | - - - | ![]() | 7485 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp4 | 480 w | Standard | Sp4 | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 600 V | 225 a | 1,9 V @ 15V, 150a | 250 µA | Ja | 9.2 NF @ 25 V. | |||||||||||||||||||||||||
![]() | APTGT30SK170T1G | - - - | ![]() | 2194 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp1 | 210 w | Standard | Sp1 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1700 v | 45 a | 2,4 V @ 15V, 30a | 250 µA | Ja | 2,5 NF @ 25 V. | |||||||||||||||||||||||||
APTGT75H60T2G | - - - | ![]() | 1814 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | Sp2 | AptGT75 | 250 w | Standard | Sp2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Vollbrückke Wechselrichter | TRABENFELD STOPP | 600 V | 100 a | 1,9 V @ 15V, 75A | 250 µA | Ja | 4.62 NF @ 25 V. | ||||||||||||||||||||||||
![]() | 40036s | - - - | ![]() | 1746 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 |
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