Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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![]() | SD1013-20H | - - - | ![]() | 4733 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | 80277H | - - - | ![]() | 1979 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
MRF553g | - - - | ![]() | 2403 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | Leistungsmakro | 3W | Leistungsmakro | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 500 | 11 dB ~ 13 dB | 16V | 500 mA | Npn | 30 @ 250 mA, 5V | 175MHz | - - - | ||||||||||||||||||||||||
![]() | 76016s | - - - | ![]() | 8979 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | Jantxv2N7228U | - - - | ![]() | 6190 | 0.00000000 | Microsemi Corporation | Militär, MIL-PRF-19500/592 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-267ab | MOSFET (Metalloxid) | To-267ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 500 V | 12a (TC) | 10V | 515Mohm @ 12a, 10V | 4v @ 250 ähm | 120 nc @ 10 v | ± 20 V | - - - | 4W (TA), 150W (TC) | |||||||||||||||||||
![]() | MRF5812G | - - - | ![]() | 2881 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | 1.25W | 8-so | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0075 | 2.500 | 13 dB ~ 15,5 dB | 15 v | 200 ma | Npn | 50 @ 50 Ma, 5V | 5GHz | 2 dB ~ 3 dB @ 500 MHz | ||||||||||||||||||||||||
![]() | 1004 ma | - - - | ![]() | 7424 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | SD1224-02 | - - - | ![]() | 6463 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | M113 | SD122 | 60W | M113 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 7.6db | 35 V | 5a | Npn | 20 @ 500 mA, 5V | 175MHz | - - - | ||||||||||||||||||||||
SD1444 | - - - | ![]() | 6460 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | K. Loch | To-205ad, bis 39-3 Metall Kann | 5W | To-39 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 8db | 16V | 400 ma | Npn | 20 @ 50 Ma, 5V | 450 MHz ~ 512 MHz | - - - | ||||||||||||||||||||||||
![]() | 1002MP | - - - | ![]() | 5604 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55fw-1 | 7W | 55fw-1 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 8.24 dB ~ 11 dB | 50V | 250 Ma | - - - | 20 @ 100 Ma, 5V | 960 MHz ~ 1,215 GHz | - - - | |||||||||||||||||||||||
![]() | MS2204 | - - - | ![]() | 6641 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | M115 | 600 MW | M115 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 10.8db | 20V | 300 ma | Npn | 15 @ 100 mA, 5V | 1,09 GHz | - - - | |||||||||||||||||||||||
![]() | APT18M80S | - - - | ![]() | 1610 | 0.00000000 | Microsemi Corporation | Power Mos 8 ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | APT18M80 | MOSFET (Metalloxid) | D3pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 800 V | 19A (TC) | 10V | 530mohm @ 9a, 10V | 5v @ 1ma | 120 nc @ 10 v | ± 30 v | 3760 PF @ 25 V. | - - - | 500W (TC) | |||||||||||||||||
2N4427 | - - - | ![]() | 2828 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | K. Loch | To-205ad, bis 39-3 Metall Kann | 1W | To-39 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 10db @ 175MHz | 40V | 400 ma | Npn | 10 @ 100 mA, 5V | 500 MHz | - - - | ||||||||||||||||||||||||
![]() | 1015mp | - - - | ![]() | 3548 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55fw | 50W | 55fw | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 10 dB ~ 11 dB | 65 V | 1a | Npn | 20 @ 100 Ma, 5V | 1.025 GHz ~ 1,15 GHz | - - - | |||||||||||||||||||||||
![]() | 10502 | - - - | ![]() | 8861 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 230 ° C (TJ) | Chassis -berg | 55SM | 1458W | 55SM | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 8.5db | 65 V | 40a | Npn | 20 @ 5a, 5V | - - - | - - - | ||||||||||||||||||||||
![]() | 46007t | - - - | ![]() | 9262 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | Jantxv2N6766T1 | - - - | ![]() | 8428 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/543 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-254-3, to-254aa (Gerade Leads) | MOSFET (Metalloxid) | To-254aa | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 30a (TC) | 10V | 90 MOHM @ 30a, 10V | 4v @ 250 ähm | 115 NC @ 10 V | ± 20 V | - - - | 4W (TA), 150W (TC) | |||||||||||||||||||
![]() | 0912-7 | - - - | ![]() | 3267 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55cx | 50W | 55cx | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 8.5db | 60 v | 1a | Npn | 10 @ 100 mA, 5V | 960 MHz ~ 1,215 GHz | - - - | |||||||||||||||||||||||
![]() | MRF5812MR2 | - - - | ![]() | 8822 | 0.00000000 | Microsemi Corporation | - - - | Band & Rollen (TR) | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | APTGT150DA120TG | - - - | ![]() | 1594 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp4 | 690 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 1200 V | 220 a | 2,1 V @ 15V, 150a | 350 µA | Ja | 10.7 NF @ 25 V | |||||||||||||||||||||
![]() | APTM120U10DAG | - - - | ![]() | 7637 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp6 | MOSFET (Metalloxid) | Sp6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 1200 V | 160a (TC) | 10V | 120 MOHM @ 58a, 10V | 5v @ 20 mA | 1100 NC @ 10 V | ± 30 v | 28900 PF @ 25 V. | - - - | 3290W (TC) | |||||||||||||||||||
![]() | JantX2N5015 | - - - | ![]() | 9950 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/727 | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205aa, bis 5-3 Metalldose | 1 w | To-5 | - - - | Rohs Nick Konform | Nicht Anwendbar | Ear99 | 8541.29.0095 | 1 | 1000 v | 200 ma | 10NA (ICBO) | Npn | 30 @ 20 Ma, 10V | - - - | ||||||||||||||||||||||||
![]() | 2N3811U | - - - | ![]() | 7940 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | Bis 78-6 Metalldose | 2N3811 | 350 MW | To-78-6 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 60 v | 50 ma | 10 µA (ICBO) | 2 PNP (Dual) | 250 mV @ 100 µA, 1 mA | 300 @ 1ma, 5v | - - - | |||||||||||||||||||||
![]() | 61074 | - - - | ![]() | 5014 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | 64044 | - - - | ![]() | 3028 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | Jan2N7227 | - - - | ![]() | 7593 | 0.00000000 | Microsemi Corporation | Militär, MIL-PRF-19500/592 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-254-3, to-254aa (Gerade Leads) | MOSFET (Metalloxid) | To-254aa | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 400 V | 14a (TC) | 10V | 415Mohm @ 14a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 20 V | - - - | 4W (TA), 150W (TC) | |||||||||||||||||||
![]() | MRF4427gr1 | - - - | ![]() | 1334 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | 1,5W | 8-so | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0075 | 2.500 | 20db | 20V | 400 ma | Npn | 10 @ 10ma, 5v | - - - | - - - | ||||||||||||||||||||||||
![]() | MRF559t | - - - | ![]() | 2339 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | - - - | - - - | 2W | - - - | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0075 | 1.000 | 9.5db | 16V | 150 Ma | Npn | 30 @ 50 Ma, 10 V | 870 MHz | - - - | ||||||||||||||||||||||||
![]() | MRFC544 | - - - | ![]() | 9627 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | 2n5578 | - - - | ![]() | 7202 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | - - - | - - - | - - - | - - - | - - - | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | - - - | - - - | - - - | - - - | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
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