Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Frequenz | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Aktuelle Bewertung (Verstärker) | Leistung - Ausgabe | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | RAUSCHFIGUR | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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![]() | 2n5011 | 19.4180 | ![]() | 4531 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205aa, bis 5-3 Metalldose | 1 w | To-5aa | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 600 V | 200 ma | 10NA (ICBO) | Npn | 1,5 V @ 5ma, 25 mA | 30 @ 25ma, 10 V. | - - - | |||||||||||||||||||||||||||
![]() | SD1372-06H | - - - | ![]() | 6727 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | MS2584 | - - - | ![]() | 1375 | 0.00000000 | Microsemi Corporation | * | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | Vrf191mp | - - - | ![]() | 4540 | 0.00000000 | Microsemi Corporation | - - - | Rohr | Veraltet | - - - | - - - | - - - | - - - | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | - - - | - - - | - - - | - - - | - - - | |||||||||||||||||||||||||||||||
![]() | APTM50DHM65TG | - - - | ![]() | 1696 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | APTM50 | MOSFET (Metalloxid) | 390W | Sp4 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 2 N-Kanal (Dual) Asymmetrisch | 500V | 51a | 78mohm @ 25.5a, 10V | 5 V @ 2,5 mA | 140nc @ 10v | 7000PF @ 25v | - - - | ||||||||||||||||||||||||
![]() | APTGT50SK120D1G | - - - | ![]() | 4134 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Abgebrochen bei Sic | - - - | Chassis -berg | D1 | 270 w | Standard | D1 | - - - | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 75 a | 2,1 V @ 15V, 50a | 5 Ma | NEIN | 3.6 NF @ 25 V | |||||||||||||||||||||||||
![]() | S200-50A | - - - | ![]() | 6814 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | MS2272 | - - - | ![]() | 6015 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | M216 | 940W | M216 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 7.6db | 65 V | 24a | Npn | 10 @ 5a, 5V | 960 MHz ~ 1,215 GHz | - - - | |||||||||||||||||||||||||||
![]() | APTGT50H120TG | - - - | ![]() | 8496 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | 277 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Vollbrückke Wechselrichter | TRABENFELD STOPP | 1200 V | 75 a | 2,1 V @ 15V, 50a | 250 µA | Ja | 3.6 NF @ 25 V | |||||||||||||||||||||||||
![]() | SD1244-09H | - - - | ![]() | 8554 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | SD1244 | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||
![]() | Jantxv2N6250 | - - - | ![]() | 6490 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/510 | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-3 | 6 w | To-3 (to-204aa) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 100 | 275 v | 10 a | 1ma | Npn | 1,5 V @ 1,25a, 10a | 8 @ 10a, 3v | - - - | ||||||||||||||||||||||||||
![]() | APTGT150SK120D1G | - - - | ![]() | 3701 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | D1 | 700 w | Standard | D1 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 220 a | 2,1 V @ 15V, 150a | 4 ma | NEIN | 10.8 NF @ 25 V | |||||||||||||||||||||||||
![]() | JTDB75 | - - - | ![]() | 5270 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55AW | 220W | 55AW | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 7db ~ 8.2db | 55 v | 8a | Npn | 20 @ 1a, 5V | 960 MHz ~ 1,215 GHz | - - - | |||||||||||||||||||||||||||
![]() | 2223-1.7 | - - - | ![]() | 6565 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | Jan2N7225 | - - - | ![]() | 5068 | 0.00000000 | Microsemi Corporation | Militär, MIL-PRF-19500/592 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-254-3, to-254aa (Gerade Leads) | MOSFET (Metalloxid) | To-254aa | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 27,4a (TC) | 10V | 105mohm @ 27.4a, 10V | 4v @ 250 ähm | 115 NC @ 10 V | ± 20 V | - - - | 4W (TA), 150W (TC) | |||||||||||||||||||||||
![]() | Jantxn3251Aub | - - - | ![]() | 2008 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | - - - | - - - | - - - | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | - - - | - - - | - - - | - - - | - - - | ||||||||||||||||||||||||||||||
![]() | MS1007 | - - - | ![]() | 7194 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | M174 | 233W | M174 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Veraltet | 0000.00.0000 | 1 | 14db | 55 v | 10a | Npn | 18 @ 1,4a, 6v | 30 MHz | - - - | |||||||||||||||||||||||||||
![]() | JantX2N2221AUB | 11.8370 | ![]() | 3889 | 0.00000000 | Microsemi Corporation | Militär, MIL-PRF-19500/255 | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | 3-smd, Keine Frotung | 2N2221 | 500 MW | UB | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 50 v | 800 mA | 50na | Npn | 1v @ 50 mA, 500 mA | 40 @ 150 mA, 10V | - - - | |||||||||||||||||||||||||
![]() | MC1331-3 | - - - | ![]() | 2572 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | MS3455 | - - - | ![]() | 6590 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | 75099 | - - - | ![]() | 6308 | 0.00000000 | Microsemi Corporation | * | Schüttgut | Veraltet | - - - | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||
![]() | MDS500L | - - - | ![]() | 8520 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55. | 833W | 55. | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 9.2db | 70V | 24a | Npn | 20 @ 1a, 5V | 1,03 GHz ~ 1,09 GHz | - - - | |||||||||||||||||||||||||||
2N6249 | - - - | ![]() | 5259 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C. | K. Loch | To-204aa, to-3 | 6 w | To-204aa (to-3) | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 100 | 200 v | 10 a | 1ma | Npn | 1,5 V @ 1a, 10a | 10 @ 10a, 3v | - - - | ||||||||||||||||||||||||||||
![]() | APTGT30DSK60T3G | - - - | ![]() | 6698 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 175 ° C (TJ) | Chassis -berg | SP3 | 90 w | Standard | SP3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Dual Buck Chopper | TRABENFELD STOPP | 600 V | 50 a | 1,9 V @ 15V, 30a | 250 µA | Ja | 1,6 NF @ 25 V. | |||||||||||||||||||||||||
![]() | 2N6802U | - - - | ![]() | 4018 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-cccc | MOSFET (Metalloxid) | 18-ulcc (9.14x7.49) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 500 V | 2,5a (TC) | 10V | 1,5OHM @ 1,5A, 10 V. | 4v @ 250 ähm | 4.46 NC @ 10 V. | ± 20 V | - - - | 800 MW (TA), 25W (TC) | |||||||||||||||||||||||
![]() | 61044 | - - - | ![]() | 1299 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | 64010h | - - - | ![]() | 8488 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Nicht Anwendbar | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | Umil100a | - - - | ![]() | 8990 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Chassis -berg | 55JU | 270W | 55JU | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 7,2 dB ~ 8,5 dB | 31V | 20a | Npn | 10 @ 1a, 5V | 225 MHz ~ 400 MHz | - - - | |||||||||||||||||||||||||||
![]() | MS2266 | - - - | ![]() | 5663 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | Jan2N2857UB | - - - | ![]() | 8543 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | Oberflächenhalterung | 3-smd, Keine Frotung | 200 MW | UB | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 21db | 15 v | 40 ma | Npn | 30 @ 3ma, 1v | - - - | 4,5 dB @ 450 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus