Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Frequenz | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Aktuelle Bewertung (Verstärker) | Leistung - Ausgabe | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | RAUSCHFIGUR | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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![]() | MDS60L | - - - | ![]() | 8077 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55AW | 120W | 55AW | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 10 dB | 65 V | 4a | Npn | 20 @ 500 mA, 5V | 1,03 GHz ~ 1,09 GHz | - - - | |||||||||||||||||||||||||||
![]() | Jan2n6766 | - - - | ![]() | 9384 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/543 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-204ae | MOSFET (Metalloxid) | To-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 30a (TC) | 10V | 90 MOHM @ 30a, 10V | 4v @ 250 ähm | 115 NC @ 10 V | ± 20 V | - - - | 4W (TA), 150W (TC) | |||||||||||||||||||||||
![]() | 2731-200p | - - - | ![]() | 7237 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Modul | - - - | Modul | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0075 | 1 | 8.7db | - - - | - - - | - - - | - - - | 2,7 GHz ~ 3,1 GHz | - - - | ||||||||||||||||||||||||||||
![]() | MS2870 | - - - | ![]() | 7702 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | APT4065Bng | - - - | ![]() | 2012 | 0.00000000 | Microsemi Corporation | Power Mos IV® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ad | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 30 | N-Kanal | 400 V | 11a (TC) | 10V | 650MOHM @ 5.5A, 10V | 4v @ 1ma | 55 NC @ 10 V | ± 30 v | 950 PF @ 25 V. | - - - | 180W (TC) | ||||||||||||||||||||||||
![]() | Jantxv2N6798U | - - - | ![]() | 5388 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/557 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-cccc | MOSFET (Metalloxid) | 18-ulcc (9.14x7.49) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 5.5a (TC) | 10V | 420mohm @ 5,5a, 10V | 4v @ 250 ähm | 42.07 NC @ 10 V | ± 20 V | - - - | 800 MW (TA), 25W (TC) | |||||||||||||||||||||||
![]() | MRFC545 | - - - | ![]() | 5051 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | Jan2N6804 | - - - | ![]() | 6623 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/562 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-204aa, to-3 | MOSFET (Metalloxid) | To-204aa (to-3) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 11a (TC) | 10V | 360MOHM @ 11A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 20 V | - - - | 4W (TA), 75W (TC) | |||||||||||||||||||||||
![]() | MS2211 | - - - | ![]() | 9131 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 250 ° C (TJ) | Chassis -berg | M222 | 25W | M222 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 9.3db | 48 v | 900 Ma | Npn | 30 @ 250 mA, 5V | 960 MHz ~ 1,215 GHz | - - - | |||||||||||||||||||||||||||
![]() | APTC80H29T1G | - - - | ![]() | 1913 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp1 | APTC80 | MOSFET (Metalloxid) | 156W | Sp1 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 4 N-Kanal (Halbe Brücke) | 800V | 15a | 290MOHM @ 7,5A, 10 V. | 3,9 V @ 1ma | 90nc @ 10v | 2254PF @ 25V | - - - | ||||||||||||||||||||||||
![]() | 64010b | - - - | ![]() | 1380 | 0.00000000 | Microsemi Corporation | * | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | JantX2N6790U | - - - | ![]() | 8178 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/555 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-cccc | MOSFET (Metalloxid) | 18-ulcc (9.14x7.49) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 200 v | 2.8a (TC) | 10V | 850 MOHM @ 3,5A, 10V | 4v @ 250 ähm | 14.3 NC @ 10 V. | ± 20 V | - - - | 800 MW (TC) | |||||||||||||||||||||||
![]() | APTGT200DA170D3G | - - - | ![]() | 2685 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | D-3-Modul | 1250 w | Standard | D3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1700 v | 400 a | 2,4 V @ 15V, 200a | 5 Ma | NEIN | 17 NF @ 25 V | |||||||||||||||||||||||||
![]() | ARF443 | - - - | ![]() | 9163 | 0.00000000 | Microsemi Corporation | - - - | Rohr | Veraltet | To-247-3 | - - - | - - - | To-247ad | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | - - - | - - - | - - - | - - - | - - - | ||||||||||||||||||||||||||||||
MRF545 | - - - | ![]() | 1076 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | K. Loch | To-205ad, bis 39-3 Metall Kann | 3.5W | To-39 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Veraltet | 0000.00.0000 | 1 | 14db | 70V | 400 ma | PNP | 15 @ 50 Ma, 6 V | 1 GHz ~ 1,4 GHz | - - - | ||||||||||||||||||||||||||||
JantXV2N5014S | - - - | ![]() | 9524 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/727 | Schüttgut | Veraltet | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205ad, bis 39-3 Metall Kann | 1 w | To-39 (bis 205ad) | - - - | Rohs Nick Konform | Nicht Anwendbar | Ear99 | 8541.29.0095 | 1 | 900 V | 200 ma | 10NA (ICBO) | Npn | 30 @ 20 Ma, 10V | - - - | |||||||||||||||||||||||||||||
![]() | APT5025 MRD. | - - - | ![]() | 2142 | 0.00000000 | Microsemi Corporation | Power Mos IV® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ad | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 23a (TC) | 10V | 250 MOHM @ 11.5A, 10V | 4v @ 1ma | 130 nc @ 10 v | ± 30 v | 2950 PF @ 25 V. | - - - | 310W (TC) | ||||||||||||||||||||||||
APTGF300DA120G | - - - | ![]() | 4683 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp6 | 1780 w | Standard | Sp6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Einzel | Npt | 1200 V | 400 a | 3,9 V @ 15V, 300A | 500 µA | NEIN | 21 NF @ 25 V | |||||||||||||||||||||||||||
![]() | APTGF100DU120TG | - - - | ![]() | 5907 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | Sp4 | 568 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | Dual Gemeinsame Quelle | Npt | 1200 V | 135 a | 3,7 V @ 15V, 100a | 350 µA | Ja | 6.9 NF @ 25 V. | ||||||||||||||||||||||||||
![]() | Jantxv2N6796 | - - - | ![]() | 4329 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/557 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-205AF Metalldose | MOSFET (Metalloxid) | To-205AF (bis 39) | - - - | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 8a (TC) | 10V | 195mohm @ 8a, 10V | 4v @ 250 ähm | 28.51 NC @ 10 V | ± 20 V | - - - | 800 MW (TA), 25W (TC) | |||||||||||||||||||||||
![]() | 2n5011 | 19.4180 | ![]() | 4531 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-205aa, bis 5-3 Metalldose | 1 w | To-5aa | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 600 V | 200 ma | 10NA (ICBO) | Npn | 1,5 V @ 5ma, 25 mA | 30 @ 25ma, 10 V. | - - - | |||||||||||||||||||||||||||
![]() | Tan300 | - - - | ![]() | 1741 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55kt | 1166W | 55kt | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 6.6 dB | 65 V | 20a | Npn | 10 @ 1ma, 5v | 960 MHz ~ 1,215 GHz | - - - | |||||||||||||||||||||||||||
![]() | MS2584 | - - - | ![]() | 1375 | 0.00000000 | Microsemi Corporation | * | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | SD1372-06H | - - - | ![]() | 6727 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||
![]() | APTGT50H120TG | - - - | ![]() | 8496 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Sp4 | 277 w | Standard | Sp4 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Vollbrückke Wechselrichter | TRABENFELD STOPP | 1200 V | 75 a | 2,1 V @ 15V, 50a | 250 µA | Ja | 3.6 NF @ 25 V | |||||||||||||||||||||||||
![]() | MS2272 | - - - | ![]() | 6015 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | M216 | 940W | M216 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 7.6db | 65 V | 24a | Npn | 10 @ 5a, 5V | 960 MHz ~ 1,215 GHz | - - - | |||||||||||||||||||||||||||
![]() | APTGT150SK120D1G | - - - | ![]() | 3701 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | Chassis -berg | D1 | 700 w | Standard | D1 | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | TRABENFELD STOPP | 1200 V | 220 a | 2,1 V @ 15V, 150a | 4 ma | NEIN | 10.8 NF @ 25 V | |||||||||||||||||||||||||
![]() | Jantxv2N6250 | - - - | ![]() | 6490 | 0.00000000 | Microsemi Corporation | Militär, Mil-PRF-19500/510 | Schüttgut | Aktiv | -65 ° C ~ 200 ° C (TJ) | K. Loch | To-3 | 6 w | To-3 (to-204aa) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 100 | 275 v | 10 a | 1ma | Npn | 1,5 V @ 1,25a, 10a | 8 @ 10a, 3v | - - - | ||||||||||||||||||||||||||
![]() | 0910-60m | - - - | ![]() | 7789 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | 200 ° C (TJ) | Chassis -berg | 55AW | 180W | 55AW | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0075 | 1 | 8db ~ 8,5 dB | 65 V | 8a | Npn | - - - | 890MHz ~ 1GHz | - - - | |||||||||||||||||||||||||||
![]() | MS2356a | - - - | ![]() | 5099 | 0.00000000 | Microsemi Corporation | - - - | Schüttgut | Veraltet | - - - | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 1 |
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